2SC5081

2SC5081 Silicon NPN Epitaxial REJ03G0743-0300 (Previous ADE-208-1133A) Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 4 1 1. Collector 2. Emitter 3. Base 4. Emitter Note: Marking is “ZD–”. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 100 150 –55 to +150 Unit V V V mA mW °C °C Rev.3.00 Aug 10, 2005 page 1 of 5 2SC5081 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 15 — — — 50 — 10.5 15 — Typ — — — — 90 0.4 13.5 18 1.1 Max — 1 1 10 160 0.75 — — 2.0 Unit V µA mA µA pF GHz dB dB Test conditions IC = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = ∞ VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Rev.3.00 Aug 10, 2005 page 2 of 5 2SC5081 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) DC Current Transfer Ratio vs. Collector Current 200 DC Current Transfer Ratio hFE 120 100 80 60 40 20 VCE = 5V 160 120 80 40 0 0.1 0 50 100 150 1 10 100 Ambient Temperature Ta (°C) Collector Current IC (mA) 20 Collector Output Capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product fT (GHz) Collector Output Capacitance vs. Collector to Base Voltage 5 IE = 0 f = 1 MHz 2 1 0.5 16 VCE = 5V 12 VCE = 1V 8 4 0 1 2 5 10 20 50 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 Collector Current IC (mA) Collector to Base Voltage VCB (V) Power Gain vs. Collector Current 20 5 VCE = 5V f = 900 MHz Noise Figure vs. Collector Current Power Gain PG (dB) 16 f = 2 GHz 12 NF (dB) VCE = 5V 4 8 Noise Figure 3 2 f = 2GHz 4 0 1 2 5 10 20 50 1 0 1 2 f = 900MHz 5 10 20 50 Collector Current IC (mA) Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 3 of 5 2SC5081 S21 Parameter vs. Collector Current S21 Parameter vs. Collector Current |S 21 | 2 (dB) |S 21 | (dB) 20 VCE = 1V 16 f = 1 GHz 20 VCE = 5V 16 f = 2 GHz 12 f = 1 GHz S 21 parameter 8 S 21 parameter 20 50 12 f = 2 GHz 2 8 4 0 1 2 5 10 4 0 1 2 5 10 20 50 Collector Current IC (mA) Collector Current IC (mA) Rev.3.00 Aug 10, 2005 page 4 of 5 2SC5081 Package Dimensions JEITA Package Code SC-82A RENESAS Code PTSP0004ZA-A Package Name CMPAK-4(T) / CMPAK-4(T)V MASS[Typ.] 0.006g D e2 b1 B B e A Q c E HE LP L Reference Symbol Dimension in Millimeters A xM A S A b L1 A3 e2 e A2 A l1 yS b b2 c c1 c A-A Section A1 S b1 b3 c1 l1 b5 e1 A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Min 0.8 0 0.8 0.25 0.35 Nom 0.1 1.8 1.15 1.8 0.3 0.1 0.2 0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.15 2.2 1.35 b4 B-B Section Pattern of terminal position areas 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 0.9 1.5 0.2 Ordering Information Part Name 2SC5081ZD-TL-E Quantity 3000 Shipping Container φ 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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