2SD1368CBTL-E

2SD1368 Silicon NPN Epitaxial REJ03G0786-0200 (Previous ADE-208-1148) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1002 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector peak current iC(peak) *1 Collector power dissipation PC*2 Junction temperature Tj Storage temperature Tstg Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Ratings 100 50 6 1 1.5 1 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1368 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter saturation voltage VBE(sat) Gain bandwidth product fT Collector output capacitance Cob Note: 1. The 2SD1368 is grouped by hFE as follows. Mark CB CC hFE 160 to 320 250 to 500 Min 100 50 6 — — 160 — — — — Typ — — — — — — — — 100 20 Max — — — 0.1 0.1 500 0.3 1.2 — — Unit V V V µA µA V V MHz pF Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 80 V, IE = 0 VEB = 4 V, IC = 0 VCE = 2 V, IC = 0.1 A IC = 1 A, IB = 0.1 A, Pulse IC = 1 A, IB = 0.1 A, Pulse VCE = 2 V, IC = 10 mA, Pulse VCB = 10 V, IE = 0, f = 1 MHz Rev.2.00 Aug 10, 2005 page 2 of 5 2SD1368 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (W) (on the alumina ceramic board) 1.2 100 Typical Output Characteristics 0.35 Collector Current IC (mA) 0.3 80 0.25 60 0.8 0.2 0.15 40 0.4 0.1 20 0.05 mA IB = 0 0 50 100 150 0 2 4 6 8 10 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Output Characteristics 2.0 40 Typical Transfer Characteristics 1,000 Collector Current IC (mA) Collector Current IC (A) 1.6 35 30 25 20 15 300 100 30 10 3 1 VCE = 2 V 1.2 10 0.8 5 mA 0.4 IB = 0 0 0.4 0.8 1.2 1.6 2.0 0 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 10,000 Base to Emitter Voltage VBE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Saturation Voltage vs. Collector Current 1.0 VBE(sat) 0.3 DC Current Transfer Ratio hFE 3,000 1,000 300 100 30 10 1 3 10 30 Pulse VCE = 2 V 0.1 0.03 VCE(sat) Pulse IC = 10 IB 100 300 1,000 0.01 10 30 100 300 1,000 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 2SD1368 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 300 100 30 10 3 1.0 0.3 0.3 f = 1 MHz IE = 0 1.0 3 10 30 100 300 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SD1368 Package Dimensions JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 ± 0.1 1.5 1.5 3.0 Ordering Information Part Name 2SD1368CBTL-E 2SD1368CCTL-E 1000 Quantity Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 0.8 Min 0.44 Max (0.4) 0.53 Max 0.48 Max (2.5) φ1 2.5 ± 0.1 4.25 Max 0.4 1.8 Max 1.5 ± 0.1 0.44 Max (1.5) (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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