2SD1419

2SD1419 Silicon NPN Epitaxial REJ03G0788-0200 (Previous ADE-208-1150) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1026 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 Note: Marking is “DE”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC 1 iC(peak)* 2 PC* Tj Tstg Ratings 120 100 5 1 2 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1419 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Notes: 1. Pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1 hFE2 VCE(sat) VBE fT Cob Min 120 100 5 — 100 30 — — — — Typ — — — — — — — — 140 12 Max — — — 10 200 — 1 1.5 — — Unit V V V µA Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 500 mA*1 IC = 500 mA, IB = 50 mA*1 VCE = 5 V, IC = 150 mA*1 VCE = 5 V, IC = 150 mA*1 VCB = 10 V, IE = 0, f = 1 MHz V V MHz pF Rev.2.00 Aug 10, 2005 page 2 of 5 2SD1419 Main Characteristics Maximum Collector Dissipation Curve Typical Output Characteristics 1.0 35 30 25 20 15 10 5 0.4 2 1 0.5 mA IB = 0 0 50 100 150 0 2 4 6 8 10 Collector Power Dissipation PC (W) (on the alumina ceramic board) 1.2 Collector Current IC (A) Ambient Temperature Ta (°C) Typical Transfer Characteristics 0.8 0.8 0.6 0.4 0.2 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 300 VCE = 5 V 250 200 150 100 50 0 500 Collector Current IC (mA) 200 100 DC Current Transfer Ratio hFE VCE = 5 V °C Ta = 75 25 –25 20 10 5 2 1 0 0.2 0.4 Ta = 75 50 °C 25 –25 0.6 0.8 1.0 1 3 10 30 100 300 1,000 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Saturation Voltage vs. Collector Current Gain Bandwidth Product vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Gain Bandwidth Product fT (MHz) 1.2 1.0 0.8 V BE(sat) 0.6 IC = 10 IB Pulse 0.5 0.4 0.3 0.2 0.1 VCE(sat) 0 1,000 240 200 160 120 80 40 0 10 VCE = 5 V Pulse 0.6 0.4 0.2 0 1 3 10 30 100 300 30 100 300 1,000 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 2SD1419 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 200 100 50 f = 1 MHz IE = 0 20 10 5 2 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SD1419 Package Dimensions JEITA Package Code SC-62 RENESAS Code PLZZ0004CA-A Package Name UPAK / UPAKV MASS[Typ.] 0.050g Unit: mm 4.5 ± 0.1 1.5 1.5 3.0 Ordering Information Part Name 2SD1419DETL-E Quantity 1000 Shipping Container φ 178 mm Reel, 12 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 0.8 Min 0.44 Max (0.4) 0.53 Max 0.48 Max (2.5) φ1 2.5 ± 0.1 4.25 Max 0.4 1.8 Max 1.5 ± 0.1 0.44 Max (1.5) (0.2) Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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