2SD667ABTZ-E

2SD667, 2SD667A Silicon NPN Epitaxial REJ03G0769-0200 (Previous ADE-208-1137) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB647/A Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg 2SD667 120 80 5 1 2 0.9 150 –55 to +150 2SD667A 120 100 5 1 2 0.9 150 –50 to +150 Unit V V V A A W °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 2SD667, 2SD667A Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE1*1 hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product VCE(sat) VBE fT Min 120 80 5 — 60 30 — — — 2SD667 Typ Max — — — — — — — — — 140 — — 10 320 — 1 1.5 — 2SD667A Min Typ Max 120 — — 100 5 — 60 30 — — — — — — — — — — 140 12 — — 10 200 — 1 1.5 — — V V MHz pF Unit V V V µA Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, 2 IC = 150 mA* VCE = 5 V, 2 IC = 500 mA* IC = 500 mA, 2 IB = 50 mA* VCE = 5 V, 2 IC = 150 mA* VCE = 5 V, 2 IC = 150 mA* VCB = 10 V, IE = 0, f = 1 MHz Cob — 12 — — Collector output capacitance Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows. 2. Pulse test B C D 2SD667 60 to 120 100 to 200 160 to 320 2SD667A 60 to 120 100 to 200 Rev.2.00 Aug 10, 2005 page 2 of 5 2SD667, 2SD667A Main Characteristics Maximum Collector Dissipation Curve Typical Output Characteristics 1.0 35 30 25 20 15 10 5 0.4 Collector Power Dissipation PC (W) 1.2 Collector Current IC (A) 0.8 0.8 0.6 0.4 P 2 C =0 .9 0.2 W 1 0.5mA IB = 0 0 50 100 150 0 2 4 6 8 10 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 300 Typical Transfer Characteristics 500 200 DC Current Transfer Ratio hFE VCE = 5 V VCE = 5 V 250 200 150 100 50 0 Collector Current IC (mA) °C Ta = 75 25 –25 Ta = 7 20 10 5 2 1 0 0.2 0.4 25 –25 0.6 0.8 50 5°C 100 1.0 1 3 10 30 100 300 1,000 Base to Emitter Voltage VBE (V) Saturation Voltage vs. Collector Current Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Gain Bandwidth Product fT (MHz) 0.6 0.5 0.4 0.3 0.2 0.1 0 1.2 1.0 0.8 0.6 0.4 0.2 0 1 3 10 30 100 300 1,000 VCE(sat) IC = 10 IB Pulse VBE(sat) 240 VCE = 5 V 200 160 120 80 40 0 10 Ta °C = –25 25 75 75 5 2 C 25 ° =– Ta 30 100 300 1,000 Collector Current IC (mA) Collector Current IC (mA) Rev.2.00 Aug 10, 2005 page 3 of 5 2SD667, 2SD667A Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 200 100 50 20 10 5 2 1 2 5 10 20 50 100 f = 1 MHz IE = 0 Collector to Base Voltage VCB (V) Rev.2.00 Aug 10, 2005 page 4 of 5 2SD667, 2SD667A Package Dimensions JEITA Package Code SC-51 RENESAS Code PRSS0003DC-A Package Name TO-92 Mod / TO-92 ModV MASS[Typ.] 0.35g Unit: mm 4.8 ± 0.4 3.8 ± 0.4 0.65 ± 0.1 0.75 Max 0.55 Max 0.60 Max 2.3 Max 0.7 10.1 Min 8.0 ± 0.5 0.5 Max 1.27 2.54 Ordering Information Part Name 2SD667BTZ-E 2SD667CTZ-E 2SD667DTZ-E 2SD667ABTZ-E 2SD667ACTZ-E 2500 Quantity Shipping Container Hold Box, Radial Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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