2SJ540-E

2SJ540 Silicon P Channel MOS FET REJ03G0887-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Drain (Flange) 3. Source 1 2 3 S Rev.4.00 Jun 05, 2006 page 1 of 7 2SJ540 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value –60 ±20 –12 –48 –12 –12 12 50 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (off) RDS (on) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf VDF trr Min –60 ±20 — — –1.0 — — 5 — — — — — — — — — Typ — — — — — 0.11 0.16 8 580 300 85 10 55 85 60 –1.2 60 Max — — –10 ±10 –2.0 0.15 0.23 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns Test Conditions ID = –10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16 V, VDS = 0 ID = –1 mA, VDS = –10 V ID = –6 A, VGS = –10 V Note 4 ID = –6 A, VGS = –4 V Note 4 ID = –6 A, VDS = –10 V Note 4 VDS = –10 V VGS = 0 f = 1 MHz VGS = –10 V ID = –6 A RL = 6 Ω IF = –12 A, VGS = 0 IF = –12 A, VGS = 0 diF/dt = 50 A/µs Rev.4.00 Jun 05, 2006 page 2 of 7 2SJ540 Main Characteristics Power vs. Temperature Derating 80 –100 –50 Maximum Safe Operation Area 10 µs 10 Pch (W) ID (A) 60 –20 –10 –5 –2 –1 –0.5 –0.2 DC PW 0 = 1 Channel Dissipation 40 20 m O s( pe 1 ra sh tio ot n ) (T c= 25 Operation in °C ) this area is limited by RDS (on) 10 m µs s Drain Current 200 0 0 50 100 150 Ta = 25°C –0.1 –0.1 –0.3 –1 –3 –10 –30 –100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics –10 –10 V –5 V –4 V –10 –3.5 V Pulse Test Typical Transfer Characteristics VDS = –10 V Pulse Test ID (A) –8 ID (A) Drain Current –8 –6 –6 –3 V Drain Current –4 –4 –2 –2.5 V VGS = –2 V –2 Tc = 75°C 25°C –25°C 0 0 –2 –4 –6 –8 –10 0 0 –1 –2 –3 –4 –5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –1.0 Pulse Test –0.8 ID = –5 A Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) 1 Pulse Test 0.5 VGS = –4 V 0.2 0.1 0.05 –0.6 –10 V –0.4 –2 A –0.2 –1 A 0.02 0.01 –0.1 –0.3 0 0 –4 –8 –12 –16 –20 –1 –3 –10 –30 –100 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.4.00 Jun 05, 2006 page 3 of 7 2SJ540 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS (on) (Ω) 0.5 Pulse Test 0.4 –2 A 0.3 VGS = –4 V ID = –5 A –1 A 20 10 5 Tc = –25°C 2 1 0.5 25°C 75°C VDS = –10 V Pulse Test 0.2 0.1 –10 V 0 –40 0 40 –5 A –1 A, –2 A 80 120 160 0.2 –0.1 –0.2 –0.5 –1 –2 –5 –10 Case Temperature Tc (°C) Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 2000 1000 Ciss Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Capacitance C (pF) 200 100 50 500 200 100 50 Coss 20 VGS = 0 f = 1 MHz 10 0 –10 Crss 20 10 5 –0.1 –0.2 di / dt = 50 A / µs VGS = 0, Ta = 25°C –0.5 –1 –2 –5 –10 –20 –30 –40 –50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics VDS (V) –20 –4 Switching Time t (ns) VDD = –10 V –25 V –50 V VGS (V) 0 0 1000 300 td(off) 100 30 10 3 1 –0.1 –0.2 tf tr Drain to Source Voltage –40 VDS –60 VDD = –50 V –25 V –10 V ID = –12 A 0 8 16 VGS –8 –12 Gate to Source Voltage td(on) –80 –16 –100 24 32 –20 40 VGS = –10 V, VDD = –30 V PW = 5 µs, duty ≤ 1 % –0.5 –1 –2 –5 –10 Gate Charge Qg (nc) Drain Current ID (A) Rev.4.00 Jun 05, 2006 page 4 of 7 2SJ540 Reverse Drain Current vs. Source to Drain Voltage –10 Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) 20 IAP = –12 A VDD = –25 V duty < 0.1 % Rg ≥ 50 Ω Reverse Drain Current IDR (A) –8 –10 V –6 –5 V –4 VGS = 0, 5 V 16 12 8 –2 Pulse Test 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 4 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θch – c (t) = γ s (t) • θch – c θch – c = 2.5°C/W, Tc = 25°C PDM pu lse 0.02 0.03 0.0 1s D= PW T PW T 1 t ho 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Avalanche Test Circuit Avalanche Waveform 1 • L • IAP2 • 2 VDSS VDSS – VDD V(BR)DSS IAP VDD ID VDS VDS Monitor L IAP Monitor EAR = Rg D.U.T Vin –15 V 50 Ω VDD 0 Rev.4.00 Jun 05, 2006 page 5 of 7 2SJ540 Switching Time Test Circuit Vin Vin Monitor D.U.T. RL 90% Vin –10 V 50 Ω VDD = –30 V Vout td(on) 10% tr td(off) 10% tf 90% 90% Vout Monitor 10% Waveform Rev.4.00 Jun 05, 2006 page 6 of 7 2SJ540 Package Dimensions Package Name TO-220AB JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Previous Code TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 –0.08 +0.2 –0.1 +0.1 4.44 ± 0.2 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 1.5 Max 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SJ540-E Quantity 500 pcs Shipping Container Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Jun 05, 2006 page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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