2SK1773

2SK1773 Silicon N Channel MOS FET REJ03G0972-0200 (Previous: ADE-208-1319) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 3 1 2 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1773 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch *1 Ratings 1000 ±30 5 15 5 100 150 –55 to +150 Unit V V A A A W *2 Tstg °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1000 ±30 — — 2.0 — 3.2 — — — — — — — — — Typ — — — — — 1.5 5.0 1700 700 315 25 110 210 135 0.85 1050 Max — — ±10 250 3.0 2.0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 800 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V* ID = 3 A, VDS = 20 V* VDS = 10 V, VGS = 0, f = 1 MHz ID = 3 A, VGS = 10 V, RL = 10 Ω 3 3 IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF/dt = 100 A/µs Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1773 Main Characteristics Power vs. Temperature Derating 160 50 30 Maximum Safe Operation Area Operation in this area is limited by RDS(on) 10 Channel Dissipation Pch (W) Drain Current ID (A) 120 10 PW 10 D C µs 0 µs ) ) ot s °C sh m 25 1 (1 = s c m (T 10 n = tio ra pe O 3 1 0.3 0.1 80 40 Ta = 25°C 30 100 300 1000 3000 10000 0 50 100 150 200 0.05 10 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V 8V 5.5 V Pulse Test 5V 5 Typical Transfer Characteristics Drain Current ID (A) 6 Drain Current ID (A) 8 4 VDS = 10 V Pulse Test 3 4 4V 2 VGS = 3.5 V 0 10 20 30 40 50 2 Tc = 75°C 25°C –25°C 1 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 20 Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 16 Static Drain to Source on State Resistance RDS (on) (Ω) 20 10 5 12 5A 8 2 1 0.5 0.2 VGS = 10 V 4 2A ID = 1 A 0 4 8 12 16 20 0.5 1 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 6 2SK1773 Static Drain to Source on State Resistance vs. Temperature 10 Pulse Test VGS = 10 V Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 10 5 Tc = – 25°C 25°C 75°C 8 6 ID = 5 A 2 1 0.5 4 2 2A 1A 160 0.2 0.1 0.05 VDS = 10 V Pulse Test 0.1 0.2 0.5 1 2 5 0 –40 0 40 80 120 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 5000 10000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) Capacitance C (pF) 2000 1000 500 di / dt = 100 A / µs VGS = 0, Ta =25°C Ciss 1000 Coss 100 Crss VGS = 0 f = 1 MHz 10 200 100 50 0.1 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1000 20 500 Switching Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) td (off) VGS VDS VDD = 250 V 400 V ID = 5 A 12 Switching Time t (ns) 800 16 200 tf 100 tr 50 td (on) 20 10 5 0.1 . VGS = 10 V, VDD = 30 V . PW = 2 µs, duty ≤ 1% 600 400 600 V VDD = 600 V 400 V 250 V 8 200 4 0 200 0 40 80 120 160 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 4 of 6 2SK1773 Reverse Drain Current vs. Source to Drain Voltage Pulse Test 8 10 Reverse Drain Current IDR (A) 6 4 VGS = 10 V 2 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 µ 1s hot P ul se 1.0 Tc = 25°C θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 1.25°C / W, Tc = 25°C PW D= T P DM T 1m 10 m 100 m PW 0.01 100 µ 1 10 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T Vout RL Vin 10 V 50 Ω Vin 10 % Waveforms 90 % 10 % 10 % 90 % . . V DD = 30 V td (on) tr 90 % td (off) tf Rev.2.00 Sep 07, 2005 page 5 of 6 2SK1773 Package Dimensions JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Package Name TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 15.6 ± 0.3 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1773-E 360 pcs Quantity Box (Tube) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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