2SK1835-E

2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 1 of 6 S 2 3 2SK1835 Absolute Maximum Ratings (Ta = 25°C) Item Symbol VDSS VGSS ID Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Ratings 1500 ±20 4 10 4 125 150 –55 to +150 ID(pulse) Note1 IDR Pch Note2 Tch Tstg Unit V V A A A W °C °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Symbol V(BR)DSS IGSS Min 1500 — Typ — — Max — ±1 Unit V µA Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage RDS(on) — 2.0 — — — 4.6 500 4.0 7.0 µA V Ω VDS = 1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2 A, VGS = 15 V Note 3 0.9 — — — — — — — — — 1.4 1700 230 100 25 80 230 80 0.85 2500 — — — — — — — — — — S pF pF pF ns ns ns ns V ns ID = 2 A, VDS = 20 V Note 3 Body to drain diode reverse recovery time Note: |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 3. Pulse Test REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 2 of 6 VDS = 10 V, VGS = 0, f = 1 MHz ID = 2A, VGS = 10 V, RL = 15 Ω IF = 4 A, VGS = 0 IF = 4 A, VGS = 0, diF/dt = 100 A/µs 2SK1835 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 30 Drain Current ID (A) 150 100 50 10 3 50 100 150 C 1 = (1 sh ot ) 25 °C 0.3 Operation in this ) area is limited by R DS (on) Ta = 25°C 30 100 300 1000 3000 10000 Typical Transfer Characteristics 8V Tc = –25°C Drain Current ID (A) Pulse Test 6V 3 5V 2 1 V GS = 4 V 10 20 30 40 50 VDS = 20 V 4 Pulse Test 25°C 75°C 3 2 1 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 25 Pulse Test 20 3A 15 10 2A 5 ID = 1 A 4 8 12 16 Gate to Source Voltage VGS (V) REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 3 of 6 20 Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) s 5 10 V Drain to Source Saturation Voltage VDS (on) (V) m (T Drain to Source Voltage VDS (V) 5 0 10 tio c Typical Output Characteristics 0 = n Case Temperature TC (°C) 4 O ra 0.05 10 200 PW D pe 0.1 0 µs µs 10 0 10 s m 1 Channel Dissipation Pch (W) 200 50 20 Pulse Test VGS = 10 V 10 15 V 5 2 1 0.5 0.2 0.5 1 2 5 Drain Current ID (A) 10 20 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1835 25 20 Pulse Test V GS = 15 V 15 ID= 3 A 10 2A 1A 5 0 –40 0 40 80 120 160 Tc = –25°C 2 25°C 1 75°C 0.5 0.2 0.1 0.05 1 2 5 Capacitance C (pF) di / dt = 100 A / µs VGS = 0, Ta = 25°C Ciss 1000 Coss 100 Crss 100 VGS = 0 f = 1 MHz 10 0.5 0.2 2 1 5 10 0 10 20 30 40 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID =4A VGS 800 16 12 V DS V DD = 600 V 400 V 400 8 250 V V DD = 600 V 4 400 V 250 V 40 80 120 160 Gate Charge Qg (nc) REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 4 of 6 0 200 50 1000 500 Switching Time t (ns) 1000 0 0.5 10000 200 200 0.2 Typical Capacitance vs. Drain to Source Voltage 1000 600 0.1 Body to Drain Diode Reverse Recovery Time Gate to Source Voltage VGS (V) Reverse Recovery Time t rr (ns) Pulse Test V DS = 20 V Drain Current ID (A) 2000 5 0.1 Drain to Source Voltage VDS (V) 5 Case Temperature TC (°C) 5000 500 10 td (off) 200 tf 100 tr 50 td (on) 20 VGS = 10 V, duty PW = 5 µ s 10 0.05 0.1 0.2 1% 0.5 1 2 Drain Current ID (A) 5 2SK1835 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 5 Pulse Test 4 3 2 1 0 V GS = 15 V 0.4 0 0,–5 V 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 Tc = 25°C D=1 0.5 0.3 0.2 0.1 0.1 θch – c(t) = γs(t) • θch – c θch – c = 1.0°C / W, Tc = 25°C 0.05 0.02 0.03 ot P 1 sh ulse PW D= T P DM 0.01 T 0.01 10 µ 100 µ 1m 100 m 10 m PW 1 10 Pulse Width PW (S) Waveforms Switching Time Test Circuit Vin Monitor 90 % Vout Monitor Vin D.U.T RL Vin 10 V 50 Ω . V DD =. 30 V REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 5 of 6 Vout 10 % 10 % 90 % td (on) tr 10 % 90 % td (off) tf 2SK1835 Package Dimensions JEITA Package Code SC-65 Previous Code TO-3P / TO-3PV RENESAS Code PRSS0004ZE-A 15.6 ± 0.3 MASS[Typ.] 5.0g Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Package Name TO-3P 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1835-E Quantity 360 pcs REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Page 6 of 6 Shipping Container Box (Tube) Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. 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