2SK1859

2SK1859 Silicon N Channel MOS FET REJ03G0981-0200 (Previous: ADE-208-1328) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) D G 1. Gate 2. Drain 3. Source S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1859 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch *1 Ratings 900 ±30 6 15 6 60 150 –55 to +150 Unit V V A A A W *2 Tstg °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 900 ±30 — — 2.0 — 2.3 — — — — — — — — — Typ — — — — — 2.0 3.7 980 400 195 20 80 125 100 0.9 1000 Max — — ±10 250 3.0 3.0 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 720 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 3 A, VGS = 10 V* ID = 3 A, VDS = 20 V* VDS = 10 V, VGS = 0, f = 1 MHz ID = 3 A, VGS = 10 V, RL = 10 Ω 3 3 IF = 6 A, VGS = 0 IF = 6 A, VGS = 0, diF/dt = 100 A/µs Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1859 Main Characteristics Power vs. Temperature Derating 90 50 30 10 Maximum Safe Operation Area Channel Dissipation Pch (W) µs Drain Current ID (A) 10 3 1 0.3 0.1 0.05 60 30 PW 1 m ion is n) = s at ea (o D 10 er ar DS C ps R m O hi y O s pe tb (1 in ed ra Sh it tio ot n lim ) (T c = 25 °C ) 10 0 µs Ta = 25°C 1 3 10 30 100 300 1000 0 50 100 150 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 10 Pulse Test 10 V 6V 5.5 V 5 Typical Transfer Characteristics VDS = 20 V Pulse Test Drain Current ID (A) 6 5V 4 4.5 V 2 VGS = 4 V 0 10 20 30 40 50 Drain Current ID (A) 8 4 3 2 75°C Ta = 25°C –25°C 1 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 ID = 5 A 12 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 10 5 VGS = 10 V 15 V Drain to Source Saturation Voltage VDS (on) (V) 8 2A 4 1A Static Drain to Source on State Resistance RDS (on) (Ω) 2 1 0.5 0.2 0 4 8 12 16 20 0.5 1 2 5 10 20 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 6 2SK1859 Static Drain to Source on State Resistance vs. Temperature 10 VGS = 10 V Pulse Test 8 Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 10 5 –25°C TC = 25°C 75°C 6 ID = 5 A 4 1A 2A 2 1 0.5 VDS = 20 V Pulse Test 0.2 0.5 1 2 5 2 0.2 0.1 0.05 0.1 0 –40 0 40 80 120 160 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage 10,000 VGS = 0 f = 1 MHz Reverse Recovery Time trr yfs (ns) 5,000 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test Capacitance C (pF) 2,000 1,000 500 1,000 Ciss Coss 100 Crss 200 100 50 0.1 10 0.2 0.5 1 2 5 10 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1,000 20 Switching Characteristics Drain to Source Voltage VDS (V) Switching Time t (ns) 800 VDD = 250 V 400 V 600 V VDS VGS 16 Gate to Source Voltage VGS (V) 500 200 100 50 . VGS = 10 V, VDD = 30 V . PW = 2 µs, duty < 1% td (off) tf tr 600 12 400 8 20 10 5 0.1 td (on) 200 600 V 400 V VDD = 250 V 20 40 60 ID = 6 A 4 0 80 100 0 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 4 of 6 2SK1859 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 4 2 5 V, 10 V VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 D=1 0.5 0.3 0.1 0.2 0.1 0.05 θch – c(t) = γs(t) • θch – c θch – c = 2.08°C/W, Tc = 25°C PDM 0.03 0.02 0.01 0.01 10 µ 1S hot P ulse PW T D= PW T 10 100 µ 1m 10 m 100 m 1 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout 50 Ω Vin 10 V VDD = 30 V Vin 10% Waveforms 90% 10% 10% 90% td (off) td (on) 90% tr tf Rev.2.00 Sep 07, 2005 page 5 of 6 2SK1859 Package Dimensions JEITA Package Code SC-93 RENESAS Code PRSS0003ZA-A Package Name TO-3PFM / TO-3PFMV MASS[Typ.] 5.2g Unit: mm 5.0 ± 0.3 5.5 ± 0.3 15.6 ± 0.3 φ3.2 + 0.4 – 0.2 5.0 ± 0.3 19.9 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 0.66 5.45 ± 0.5 + 0.2 – 0.1 21.0 ± 0.5 4.0 ± 0.3 2.6 0.86 3.2 ± 0.3 1.6 0.86 0.2 0.9 + 0.1 – 5.45 ± 0.5 Ordering Information Part Name 2SK1859-E 360 pcs Quantity Box (Tube) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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