2SK1934

2SK1934 Silicon N Channel MOS FET REJ03G0985-0200 (Previous: ADE-208-1333) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on–resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3. Source S 3 1 2 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1934 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch 2 1 Ratings 1000 ±30 8 24 8 150 150 –55 to +150 Unit V V A A A W Tstg °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1000 ±30 — — 2.0 — 4 — — — — — — — — — Typ — — — — — 1.2 6 2690 920 375 35 135 300 205 0.9 1600 Max — — ±10 250 3.0 1.6 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V µs Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 800 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V* ID = 4 A, VDS = 20 V* VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 7.5 Ω 3 3 IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF/dt = 100 A/µs Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1934 Main Characteristics Power vs. Temperature Derating 200 Maximum Safe Operation Area 50 30 Channel Dissipation Pch (W) 10 DS a (o rea n) µs Drain Current ID (A) 150 10 3 1 0.3 0.1 O i s pe l i m ra ite tion d in by t R h is 10 0 PW DC µs 1 m c= (T 10 n = tio ra pe O s m 100 s (1 o sh t) 50 ) °C 25 Ta = 25°C 3 10 30 100 0 50 100 150 200 0.05 1 300 1000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V 8V Pulse Test 8 5V 6 4 4V 2 VGS = 3.5 V 10 20 30 40 50 10 8 6 4 2 Typical Transfer Characteristics Drain Current ID (A) Drain Current ID (A) Pulse Test VDS = 20 V Tc = 25°C 75 C –25 C 0 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 1.0 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 50 20 10 5 2 VGS = 10 V 1 0.5 0.2 0.5 1 2 5 10 20 Pulse Test Pulse Test 0.8 0.6 0.4 2A 0.2 ID= 1 A 4 8 12 16 20 5A 0 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 6 2SK1934 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 5 4 3 2 1 0 –40 Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.1 0.2 0.5 1 2 5 10 Pulse Test Pulse Test VDS = 20 V Tc = 25°C –25°C ID = 5 A 2A 1A 75°C 0 40 80 120 160 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 5000 10000 di/dt = 100 A/ µs, VGS = 0 Ta = 25°C Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Reverse Recovery Time trr (ns) Capacitance C (pF) 2000 1000 500 200 100 50 0.2 Ciss 1000 Coss Crss 100 VGS = 0 V f = 1 MHz 0.5 1 2 5 10 20 10 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) 1000 800 600 400 200 Switching Characteristics 20 16 12 8 4 0 200 VGS VDD = 250 V 400 V 600 V VDS ID = 8 A 500 200 100 50 20 10 5 0.1 0.2 tf td(off) Switching Time t (ns) tr td(on) VDD = 250 V 400 V 600 V VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % 0 40 80 120 160 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 4 of 6 2SK1934 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 4 2 VGS = 10 V 0, –5 V 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 1.0 TC = 25°C 0.05 0.02 θch–c (t) = γS (t) · θch–c θch–c = 0.83°C/W, TC = 25°C PDM e 0.03 0.01 10 µ 0.01 t Puls ho 1S T 1m 10 m 100 m PW D = PW T 100 µ 1 10 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T. RL Vout Vin 10 V 50 Ω VDD . = 30 V . td (on) Vin 10% 10% Waveforms 90% 10% 90% td (off) 90% tr tf Rev.2.00 Sep 07, 2005 page 5 of 6 2SK1934 Package Dimensions JEITA Package Code SC-65 RENESAS Code PRSS0004ZE-A Package Name TO-3P / TO-3PV MASS[Typ.] 5.0g 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 15.6 ± 0.3 0.5 1.0 φ3.2 ± 0.2 14.9 ± 0.2 19.9 ± 0.2 1.6 1.4 Max 2.0 2.8 2.0 1.0 ± 0.2 3.6 0.9 1.0 18.0 ± 0.5 0.6 ± 0.2 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name 2SK1934-E 360 pcs Quantity Box (Tube) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: 2-796-3115, Fax: 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: 7955-9390, Fax: 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0