2SK1971-E

2SK1971 Silicon N Channel MOS FET REJ03G0990-0200 (Previous: ADE-208-1338) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1. Gate 2. Drain (Flange) 3. Source S 2 3 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2SK1971 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch 2 1 Ratings 500 ±30 35 140 35 200 150 –55 to +150 Unit V V A A A W Tstg °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 500 ±20 — — 2.0 — 16 — — — — — — — — — Typ — — — — — 0.19 24 4320 1120 130 50 170 320 130 1.1 530 Max — — ±10 250 3.0 0.23 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS =400 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 18 A, VGS = 10 V* ID = 18 A, VDS = 10 V* VDS = 10 V, VGS = 0, f = 1 MHz ID = 18 A, VGS = 10 V, RL = 1.67 Ω 3 3 IF =35 A, VGS = 0 IF = 35 A, VGS = 0, diF/dt = 100 A/µs Rev.2.00 Sep 07, 2005 page 2 of 6 2SK1971 Main Characteristics Power vs. Temperature Derating 300 1000 300 Operation in this area is limited by RDS (on) PW Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 100 30 10 3 1 0.3 0.1 Ta = 25°C DC = 10 m s( 200 10 1m 1 10 0µ µs s s ot ) 100 Op er at ion Sh (T c= 25 °C ) 0 50 100 150 1 3 10 30 100 300 1000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 40 30 20 4.5 V 10 VGS = 4 V 0 10 20 30 40 50 0 Typical Transfer Characteristics 50 6V 5.5 V Pulse Test 5V Drain Current ID (A) Drain Current ID (A) 40 30 Tc = 25°C 20 10 75°C VDS = 20 V Pulse Test –25°C 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 5 2 Pulse Test 1 0.5 0.2 0.1 0.05 2 5 10 20 50 100 200 VGS = 10 V Drain to Source Saturation Voltage VDS (on) (V) 20 16 12 8 4 20 A I D = 10 A 0 4 8 12 16 20 Pulse Test 50 A Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 6 2SK1971 Static Drain to Source on State Resistance vs. Temperature 1.0 0.8 0.6 0.4 0.2 0 –40 10 A Pulse Test VGS = 10 V Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 50 20 10 5 2 1 0.5 1 2 5 –25°C Tc = 25°C 75°C I D = 50 A 20 A VDS = 20 V Pulse Test 0 40 80 120 160 10 20 50 100 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 1000 10000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Ciss Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 200 100 50 20 10 0.5 di/dt = 100 A/ µ s, VGS = 0 Ta = 25°C 1000 Coss 100 VGS = 0 f = 1 MHz 10 Crss 1 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 1000 Drain to Source Voltage VDS (V) 1000 800 600 VDS 400 200 V DD = 400 V 250 V 100 V Gate to Source Voltage VGS (V) VGS Switching Time t (ns) 16 12 I D = 35 A 8 4 0 160 200 500 200 tf 100 50 td(off) tr td(on) V DD = 400 V 250 V 100 V 40 80 120 20 VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % 0 10 0.5 1 2 5 10 20 50 Gate Charge Qg (nc) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 4 of 6 2SK1971 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 20 10 VGS = 10 V VGS = 0, –5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 TC = 25°C 1.0 0.05 θch–c (t) = γS (t) • θch–c θch–c = 0.625°C/W, TC = 25°C PDM PW 1 D = PW T 0.02 0.03 0.01 ulse ot P 1 Sh 0.01 10 µ 100 µ T 1m 10 m 100 m 10 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL 50 Ω Vin 10 V Vin Vout 10% 10% Waveforms 90% 10% 90% td (off) VDD . = 30 V . td (on) 90% tr tf Rev.2.00 Sep 07, 2005 page 5 of 6 2SK1971 Package Dimensions JEITA Package Code  RENESAS Code PRSS0004ZF-A Package Name TO-3PL / TO-3PLV MASS[Typ.] 9.9g Unit: mm 6.0 ± 0.2 20.0 ± 0.3 φ3.3 ± 0.2 5.0 ± 0.2 26.0 ± 0.3 20.0 ± 0.6 2.5 ± 0.3 1.4 3.0 2.2 1.2 +0.25 –0.1 5.45 ± 0.5 1.0 0.6 +0.25 –0.1 2.8 ± 0.2 5.45 ± 0.5 3.8 7.4 Ordering Information Part Name 2SK1971-E 500 pcs Quantity Box (Case) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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