2SK2114
Silicon N Channel MOS FET
REJ03G0998-0200 (Previous: ADE-208-1346) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator
Outline
RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM)
D G 1. Gate 2. Drain 3. Source
12
3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2114
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 450 ±30 5 20 5 35 150 –55 to +150 Unit V V A A A W °C °C
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 450 ±30 — — 2.0 — 2.5 — — — — — — — — — Typ — — — — — 1.0 4.0 640 160 20 10 25 50 30 0.95 300 Max — — ±10 250 3.0 1.4 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 2.5 A, VGS = 10 V*3 ID = 2.5 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 2.5 A, VGS = 10 V, RL = 12 Ω
IF = 5 A, VGS = 0 IF = 5 A, VGS = 0, diF / dt = 100 A / µs
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK2114
Main Characteristics
Power vs. Temperature Derating
60
50 20
Maximum Safe Operation Area
Channel Dissipation Pch (W)
10
Drain Current ID (A)
10 5 2 1 0.5 0.2 0.1
10
µs
µs
0
40
1
m
) ) ot °C Sh 25 (1 C= s m n (T 10 tio = ra e PW Op C D
s
20
Operation in this Area is Limited by RDS (on)
Ta = 25°C 1 3 10 30 100 300 1,000
0
50
100
150
0.05
Case Temperature TC (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 10 V Pulse Test 5.5 V 10
Typical Transfer Characteristics
–25°C VDS = 20 V Pulse Test 75°C TC = 25°C
6V
Drain Current ID (A)
6 5.0 V 4 4.5 V 2 VGS = 4 V 0 10 20 30 40 50
Drain Current ID (A)
8
8
6
4
2
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
10 Pulse Test
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
10 Pulse Test 5 VGS = 10 V 15 V
Drain to Source Saturation Voltage VDS (on) (V)
8
Static Drain to Source on State Resistance RDS (on) (Ω)
6
5A
2 1.0 0.5
4 2A ID = 1 A 0 4 8 12 16 20
2
0.2 0.1 0.5
1.0
2
5
10
20
50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK2114
Static Drain to Source on State Resistance vs. Temperature
5 VGS = 10 V Pulse Test 4
Static Drain to Source on State Resistance RDS (on) (Ω)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
10 5 2 1.0 0.5 0.2 0.1 0.05 VDS = 20 V Pulse Test –25°C TC = 25°C 75°C
3
ID = 5 A
2 1A 2A
1
0 –40
0
40
80
120
160
0.1
0.2
0.5
1.0
2
5
Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
5,000 2,000 1,000 500 200 100 50 0.1 1 0.2 0.5 1.0 2 5 10 0 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 1,000
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Ciss
Capacitance C (pF)
VGS = 0 f = 1 MHz
100 Coss
10 Crss
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
500
Switching Characteristics
20 500
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
VDD = 100 V 250 V VDS 400 V
VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1%
•
•
Switching Time t (ns)
400
16
200 100 td (off) 50 tf 20 10 5 0.1 tr td (on)
300 VGS 200 ID = 5 A 100 VDD = 400 V 250 V 100 V 8 16 24 32
12
8
4
0 0 40
0.2
0.5
1.0
2
5
10
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK2114
Reverse Drain Current vs. Source to Drain Voltage
10
Reverse Drain Current IDR (A)
Pulse Test 8
6
4 5, 10 V VGS = 0, –10 V 0 0.4 0.8 1.2 1.6 2.0
2
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γS (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 θch–c (t) = γ S (t) • θch–c θch–c = 3.57°C/W, TC = 25°C PDM PW 1 D = PW T TC = 25°C
0.03 0.01 10 µ
0.02 0.01 ulse P hot 1S
100 µ 1m 10 m
T 100 m
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor Vout Monitor D.U.T RL Vout 50 Ω Vin = 10 V . VDD = 30 V . td(on) Vin 10 %
Waveforms
90 %
10 % 90 % tr 90 % td(off)
10 %
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK2114
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0003AE-A
Package Name TO-220CFM / TO-220CFMV
MASS[Typ.] 1.9g
Unit: mm
10.0 ± 0.3
φ 3.2 ± 0.2
4.5 ± 0.3 2.7 ± 0.2
4.1 ± 0.3
0.6 ± 0.1
2.5 ± 0.2
2.54
2.54
0.7 ± 0.1
Ordering Information
Part Name 2SK2096-E Quantity 30 pcs Plastic magazine Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
13.6 ± 1.0
1.0 ± 0.2 1.15 ± 0.2
12.0 ± 0.3
15.0 ± 0.3
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