2SK2912STL-E

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1038-0200 (Previous: ADE-208-495A) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS = 15 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 G 1 2 D 1. Gate 2. Drain 3. Source 4. Drain 3 S 1 2 3 Rev.2.00 Sep 07, 2005 page 1 of 8 2SK2912(L), 2SK2912(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche Energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)*1 IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings 60 ±20 40 160 40 40 137 50 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 60 ±20 — — 1.5 — — 20 — — — — — — — — — Typ — — — — — 15 25 35 1500 720 200 20 180 200 200 0.95 70 Max — — ±10 10 2.5 20 40 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V V Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 20 A, VGS = 10 V*4 ID = 20 A, VGS = 4 V*4 ID = 20 A, VDS = 10 V*4 VDS = 10 V, VGS = 0, f = 1 MHz ID = 20 A, VGS = 10 V, RL = 1.5 Ω IF = 40 A, VGS = 0 IF = 40 A, VGS = 0 diF/ dt = 50A/ µs Rev.2.00 Sep 07, 2005 page 2 of 8 2SK2912(L), 2SK2912(S) Main Characteristics Power vs. Temperature Derating 100 1000 300 10 µ 10 µs 0 µs µ 1 m s ms ( c= Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 75 100 30 10 3 1 0.3 DC PW Op er = 10 50 ati on 1s 25 Operation in this area is limited by RDS(on) Ta = 25°C 0.3 1 3 (T ho t) 25 ° ¡C ) 0 50 100 150 200 0.1 0.1 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 50 10 V 6V 4.5 V 50 4V Typical Transfer Characteristics VDS = 10 V Pulse Test Drain Current ID (A) 30 Pulse Test 3.5 V Drain Current ID (A) 40 40 30 Tc = 75°C 25°C 20 20 –25°C 10 VGS = 3 V 10 0 2 4 6 8 10 0 1 2 3 4 5 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 0.05 VGS = 4 V Drain to Source Saturation Voltage VDS (on) (V) 2.0 Pulse Test 1.6 1.2 ID = 50 A 0.8 Static Drain to Source on State Resistance RDS (on) (Ω) 0.02 0.01 0.005 1 2 5 10 20 50 100 10 V 0.4 20 A 10 A 4 8 12 16 20 0 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 8 2SK2912(L), 2SK2912(S) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 0.05 Pulse Test 0.04 ID = 20 A VGS = 4 V Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current 100 50 Tc = –25°C 25°C 75°C 0.03 10 A 20 10 5 0.02 50 A 10, 20 A 10 V 0.01 0 –40 2 1 1 2 5 10 VDS = 10 V Pulse Test 0 40 80 120 160 20 50 100 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 1000 5000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 2000 1000 500 Ciss 200 100 50 20 10 0.1 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100 Coss 200 100 50 Crss 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) ID = 40 A VDD = 10 V 25 V 50 V VDS Switching Characteristics Gate to Source Voltage VGS (V) 20 1000 100 80 16 Switching Time t (ns) 300 100 30 10 3 1 0.1 tr td(off) tf td(on) 60 VGS 12 40 8 20 VDD = 50 V 25 V 10 V 4 0 100 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 0 20 40 60 80 0.3 1 3 10 30 100 Gate Charge Qg (nc) Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 4 of 8 2SK2912(L), 2SK2912(S) Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating (A) 50 Repetitive Avalanche Energy EAR (mJ) 200 IAP = 40 A VDD = 25 V duty < 1 % Rg > 50 Ω Reverse Drain Current IDR 40 10 V 30 5V 20 VGS = 0, –5 V 160 120 80 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 40 0 25 50 75 100 125 150 Source to Drain Voltage VSD (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 2.5°C/W, Tc = 25°C PDM PW T 0.03 0.02 1 lse 0.0 t pu ho 1s D= PW T 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 Pulse Width Avalanche Test Circuit VDS Monitor L IAP Monitor PW (S) Avalanche Waveform EAR = 1 2 • L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP Rg D. U. T VDD VDS ID Vin 15 V 50 Ω 0 VDD Rev.2.00 Sep 07, 2005 page 5 of 8 2SK2912(L), 2SK2912(S) Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = 30 V 90% td(on) tr 90% td(off) tf Vin Vout Vin 10 V 50 Ω 10% 10% 10% Vout Monitor Switching Time Waveforms 90% Rev.2.00 Sep 07, 2005 page 6 of 8 2SK2912(L), 2SK2912(S) Package Dimensions JEITA Package Code  RENESAS Code PRSS0004AE-A Package Name LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g Unit: mm (1.4) 4.44 ± 0.2 10.2 ± 0.3 1.3 ± 0.15 11.3 ± 0.5 0.3 10.0 + 0.5 – 8.6 ± 0.3 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 11.0 ± 0.5 0.2 0.86 + 0.1 – 2.49 ± 0.2 0.4 ± 0.1 JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Package Name LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g Unit: mm 4.44 ± 0.2 10.2 ± 0.3 (1.4) 8.6 ± 0.3 + 0.3 – 0.5 10.0 (1.5) (1.5) 2.49 ± 0.2 0.2 0.1 + 0.1 – 7.8 7.0 2.2 1.37 ± 0.2 1.3 ± 0.2 2.54 ± 0.5 0.3 3.0 + 0.5 – 0.2 0.86 + 0.1 – 0.4 ± 0.1 2.54 ± 0.5 Rev.2.00 Sep 07, 2005 page 7 of 8 1.7 1.3 ± 0.15 7.8 6.6 2SK2912(L), 2SK2912(S) Ordering Information Part Name 2SK2912L-E 2SK2912STL-E Quantity 500 pcs 500 pcs Box (Sack) Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 8 of 8 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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