2SK3140

2SK3140 Silicon N Channel MOS FET High Speed Power Switching REJ03G1069-0500 (Previous: ADE-208-767C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.5.00 Sep 07, 2005 page 1 of 7 2SK3140 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Ratings 60 ±20 60 240 60 50 214 35 150 –55 to +150 Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 — — 1.0 — — 45 — — — — — — — — — — — — Typ — — — — 6.0 8.0 75 7100 1000 280 125 25 25 60 250 540 320 1.0 80 Max — ±0.1 10 2.5 7.5 12 — — — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 V Note 4 ID = 30 A, VGS = 10 V Note 4 ID = 30 A, VGS = 4 V Note 4 ID = 30 A, VDS = 10 V Note 4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 25 V, VGS = 10 V, ID = 60 A VGS = 10 V, ID = 30 A, RL = 1Ω IF = 60 A, VGS = 0 IF = 60 A, VGS = 0 diF/ dt = 50 A/ µs Rev.5.00 Sep 07, 2005 page 2 of 7 2SK3140 Main Characteristics Power vs. Temperature Derating 40 1000 300 Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 30 100 30 10 3 1 0.3 DC Op PW µs 0 1 m µs = 10 s 10 m 10 er 20 ati on s( 1 10 Operation in this area is limited by RDS(on) Ta = 25°C 0.3 1 3 (T sh c= ot ) 25 °C ) 0 50 100 150 200 0.1 0.1 10 30 100 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 100 VGS = 10 V 5V 4V Typical Transfer Characteristics 100 Pulse Test Drain Current ID (A) 60 Drain Current ID (A) 80 3.5 V 80 VDS = 10 V Pulse Test 60 40 3V 20 2.5 V 0 2 4 6 8 10 40 25°C 75°C Tc = –25°C 0 1 2 3 4 5 20 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Drain to Source Saturation Voltage VDS (on) (V) 2.0 Pulse Test Static Drain to Source on State Resistance RDS (on) (mΩ) Pulse Test 50 1.6 1.2 20 10 5 VGS = 4 V 0.8 10 V 0.4 10 A 0 4 8 ID = 50 A 20 A 12 16 20 2 1 1 2 5 10 20 50 100 200 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.5.00 Sep 07, 2005 page 3 of 7 2SK3140 Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 20 Pulse Test 16 ID = 50 A 10 A 4V 10, 20, 50 A VGS = 10 V Static Drain to Source on State Resistance RDS (on) (mΩ) Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 100 25°C 75°C Tc = –25°C VDS = 10 V Pulse Test 20 A 12 8 4 0 –50 0 50 100 150 200 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 1000 30000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time trr (ns) 500 200 100 50 20 10 0.1 di / dt = 50 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 30 100 Capacitance C (pF) 10000 Ciss 3000 1000 Coss 300 100 0 Crss 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) ID = 60 A VGS Switching Characteristics Gate to Source Voltage VGS (V) 20 1000 td(off) 100 80 16 Switching Time t (ns) 500 tf tr td(on) 60 VDS VDD = 50 V 25 V 10 V 200 100 50 20 12 40 8 20 VDD = 50 V 25 V 10 V 4 0 400 0 80 160 240 320 10 0.1 0.2 0.5 1 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % 2 5 10 20 50 100 Gate Charge Qg (nc) Drain Current ID (A) Rev.5.00 Sep 07, 2005 page 4 of 7 2SK3140 Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) (A) 100 10 V 80 5V 250 IAP= 50 A VDD = 25 V duty < 0.1 % Rg > 50 Ω Reverse Drain Current IDR 200 60 V GS = 0, –5 V 40 150 100 20 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 50 0 25 50 75 100 125 150 Source to Drain Voltage VSDF (V) Channel Temperature Tch (°C) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γs (t) 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.57°C/ W, Tc = 25°C PDM D= PW T 0.03 0.02 1 0.0 PW T 0.01 10 µ 1s t ho pu lse 100 µ 1m 10 m 100 m 1 10 Pulse Width Avalanche Test Circuit VDS Monitor L IAP Monitor PW (S) Avalanche Waveform EAR = 1 2 • L • IAP2 • VDSS VDSS – VDD V(BR)DSS IAP Rg D. U. T VDD VDS ID Vin 15 V 50 Ω 0 VDD Rev.5.00 Sep 07, 2005 page 5 of 7 2SK3140 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω VDD = 30 V Vout 10% 10% 10% Vout Monitor Switching Time Waveforms 90% 90% td(on) tr 90% td(off) tf Rev.5.00 Sep 07, 2005 page 6 of 7 2SK3140 Package Dimensions JEITA Package Code  RENESAS Code PRSS0003AE-A Package Name TO-220CFM / TO-220CFMV MASS[Typ.] 1.9g Unit: mm 10.0 ± 0.3 φ 3.2 ± 0.2 4.5 ± 0.3 2.7 ± 0.2 4.1 ± 0.3 0.6 ± 0.1 2.5 ± 0.2 2.54 2.54 0.7 ± 0.1 Ordering Information Part Name 2SK3140-E Quantity 50 pcs Plastic magazine Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Sep 07, 2005 page 7 of 7 13.6 ± 1.0 1.0 ± 0.2 1.15 ± 0.2 12.0 ± 0.3 15.0 ± 0.3 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: 2-796-3115, Fax: 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: 7955-9390, Fax: 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0