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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3943
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3943 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
PART NUMBER
PACKAGE
2SK3943-ZP
TO-263 (MP-25ZP)
FEATURES
• Super low on-state resistance
(TO-263)
RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
• Low Ciss: Ciss = 5800 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±82
A
ID(pulse)
±328
A
Total Power Dissipation (TC = 25°C)
PT1
104
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Tstg
−55 to +150
°C
EAS
185
mJ
IAR
43
A
EAR
185
mJ
Drain Current (pulse)
Note1
Storage Temperature
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Avalanche Energy
Note3
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch(peak) ≤ 150°C, RG = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17188EJ2V0DS00 (2nd edition)
Date Published April 2007 NS CP(K)
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2005
2SK3943
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1.0
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
VGS(off)
VDS = 10 V, ID = 1 mA
2.0
2.5
3.0
V
| yfs |
VDS = 10 V, ID = 41 A
21
43
RDS(on)1
VGS = 10 V, ID = 41 A
2.9
3.5
mΩ
RDS(on)2
VGS = 5.5 V, ID = 41 A
3.8
5.6
mΩ
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
S
Input Capacitance
Ciss
VDS = 10 V
5800
pF
Output Capacitance
Coss
VGS = 0 V
860
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
510
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 41 A
29
ns
VGS = 10 V
10
ns
RG = 0 Ω
69
ns
12
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 32 V
93
nC
Gate to Source Charge
QGS
VGS = 10 V
28
nC
QGD
ID = 82 A
28
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
VF(S-D)1
IF = 60 A, VGS = 0 V
0.88
1.2
V
VF(S-D)2
IF = 82 A, VGS = 0 V
0.92
1.5
V
Reverse Recovery Time
trr
IF = 82 A, VGS = 0 V
40
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
49
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D17188EJ2V0DS
td(on)
ton
tf
toff
2SK3943
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
125
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
100
75
50
25
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse) = 328 A
100
100 μs
ID(DC) = 82 A
1 ms
10
Power Dispation Limited
10 ms
TC = 25°C
Single pulse
1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
RDS(on)Limited
(at VGS = 10 V)
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 1.2°C/W
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D17188EJ2V0DS
3
2SK3943
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000
400
Pulsed
300
ID - Drain Current - A
ID - Drain Current - A
350
VGS = 10 V
250
5.5 V
200
150
100
100
Tch = −55°C
25°C
75°C
125°C
150°C
10
1
0.1
VDS = 10 V
Pulsed
50
0
0.01
0
1
2
3
4
0
5
VDS - Drain to Source Voltage - V
3
2.5
2
1.5
1
0.5
0
25
75
125
| yfs | - Forward Transfer Admittance - S
VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V
ID = 1 mA
-25
8
7
6
VGS = 5.5 V
4
3
10 V
1
0
10
100
V DS = 10 V
Pulsed
0.1
1
10
100
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
8
6
4
ID = 41 A
2
0
0
5
10
15
VGS - Gate to Source Voltage - V
ID - Drain Current - A
4
7
1
0.1
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
Pulsed
1
6
ID - Drain Current - A
10
2
5
T c h = −55°C
25°C
75°C
125°C
150°C
10
175
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
5
4
100
Tch - Channel Temperature - °C
9
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
-75
2
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.5
1
Data Sheet D17188EJ2V0DS
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10
ID = 41 A
Pulsed
8
7
6
V GS = 5.5 V
5
4
3
10 V
2
10000
Ciss
VGS = 0 V
f = 1 MHz
1
0
-75
-25
25
75
125
100
0.01
175
Tch - Channel Temperature - °C
0.1
1
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(off)
100
td(on)
tf
10
tr
VDS - Drain to Source Voltage - V
1000
td(on), tr, td(off), tf - Switching Time - ns
Crss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
14
ID = 82 A
30
12
VDD = 32 V
20 V
8V
25
10
20
8
15
6
VGS
10
4
VDS
5
1
2
0
0.1
1
10
100
0
ID - Drain Current - A
20
40
60
80
0
100
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
IF - Diode Forward Current - A
1000
IF - Diode Forward Current - A
Coss
1000
VGS - Gate to Source Voltage - V
9
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
2SK3943
100
VGS = 10 V
0V
10
1
0.1
Tch = −55°C
25°C
75°C
125°C
150°C
100
10
1
0.1
VGS = 0 V
Pulsed
Pulsed
0.01
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
Data Sheet D17188EJ2V0DS
5
2SK3943
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
1000
IAS - Single Avalanche Current - A
trr - Reverse Recovery Time - ns
1000
100
10
di/dt = 100 A/μs
VGS = 0 V
100
1
0.1
1
10
100
SINGLE AVALANCHE ENERGY
DERATING FACTOR
Energy Derating Factor - %
100
VDD = 20 V
RG = 25 Ω
VGS = 20 → 0 V
IAS ≤ 43 A
60
40
20
0
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
6
EAS = 185mJ
10
V DD = 20 V
RG = 25 Ω
V GS = 20 → 0 V
Starting Tch = 25°C
1
0.001
0.01
0.1
1
L - Inductive Load - mH
IF - Diode Forward Current - A
80
IAS = 43 A
Data Sheet D17188EJ2V0DS
10
2SK3943
PACKAGE DRAWING (Unit: mm)
0.5
4.45±0.2
1.3±0.2
0.025 to
0.25
0.6±
0.75±0.2
0.2
0 to
2.54
2.54±0.25
9.15±0.3
8.0 TYP.
7.88 MIN.
4
15.25±0.5
10.0±0.3
No plating
1.35±0.3
TO-263 (MP-25ZP)
8o
0.25
1
2
3
1.Gate
2.Drain
2.5
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Data Sheet D17188EJ2V0DS
7
2SK3943
• The information in this document is current as of April, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
