2SK435DTZ

2SK435 Silicon N-Channel Junction FET REJ03G0812-0200 (Previous ADE-208-1171) Rev.2.00 Aug.10.2005 Application Low frequency / High frequency amplifier Outline RENESAS Package code: PRSS0003DB-C (Package name: TO-92 (2)) 1. Drain 2. Source 3. Gate 3 2 1 Rev.2.00 Aug 10, 2005 page 1 of 5 2SK435 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IG Pch Tch Tstg Ratings 22 –22 100 10 300 150 –55 to +150 Unit V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Gate to source breakdown voltage Gate cutoff current Gate to source cutoff voltage Drain current Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure Note: Symbol V(BR)GSS IGSS VGS(off) IDSS*1 |yfs| Ciss Crss NF Min –22 — — 12 20 — — — Typ — — — — — 9.0 2.8 0.5 Max — –10 –2.5 30 — 11.0 4.0 3.0 Unit V nA V mA mS pF pF dB Test conditions IG = –10 µA, VDS = 0 VGS = –15 V, VDS = 0 VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, Pulse test VDS = 5 V, ID = 10 mA, f = 1kHz VDS = 5 V, VGS = 0, f = 1MHz VDS = 5 V, VGS = 0, f = 1MHz VDS = 5 V, ID = 1 mA, f = 1kHz, Rg = 1kΩ 1. The 2SK435 is grouped by IDSS as follows. Grade C 12 to 22 18 to 30 D IDSS Rev.2.00 Aug 10, 2005 page 2 of 5 2SK435 Maximum Channel Dissipation Curve 400 Channel Power Dissipation Pch (mW) Typical Output Characteristics 20 VGS = 0V 300 Drain Current ID (mA) 16 −0.1 −0.2 12 200 −0.3 8 −0.4 −0.5 −0.6 100 4 0 50 100 150 200 0 2 4 6 8 10 Ambient Temperature Ta (°C) Drain to Source Voltage VDS (V) Typical Transfer Characteristics 20 VDS = 5 V Forward Transfer Admittance ⏐yfs⏐ (mS) Forward Transfer Admittance vs. Drain Current 100 VDS = 5 V f = 1 kHz 10 Drain Current ID (mA) 16 12 8 1.0 4 −1.25 0 −1.0 −0.75 −0.5 −0.25 0 0.1 0.1 1.0 10 100 Gate to Source Voltage VGS (V) Drain Current ID (mA) Forwaed Transfer Admittance vs. Gate to Source Voltage 50 Gate Cutoff Current IGSS (pA) Forward Transfer Admittance ⏐yfs⏐ (mS) Gate Cutoff Current vs. Gate to Source Voltage 1,000 40 VDS = 5 V f = 1 kHz VDS = 0 100 30 10 20 10 1.0 −1.25 0 −1.0 −0.75 −0.5 −0.25 0.1 0 0 −10 −20 −30 −40 −50 Gate to Source Voltage VGS (V) Gate to Source Voltage VGS (V) Rev.2.00 Aug 10, 2005 page 3 of 5 2SK435 Input Capacitance vs. Drain to Source Voltage f = 1 MHz VGS = 0 Reverse Transfer Capacitance Crss (pF) Reverse Transfer Capacitance vs. Drain to Source Voltage 100 50 f = 1 MHz VGS = 0 100 Input Capacitance Ciss (pF) 50 20 10 5 20 10 5 2 1 0.1 2 1 0.1 0.2 0.5 1.0 2 5 10 0.2 0.5 1.0 2 5 10 Drain to Source Voltage VDS (V) Drain to Source Voltage VDS (V) Noise Figure vs. Signal Source Resistance Noise Figure vs. Frequency 12 10 8 6 4 2 0 10 VDS = 5 V ID = 1mA f = 1 kHz 12 10 8 6 4 2 0 10 VDS = 5 V ID = 1mA Rg = 1 kΩ Noise Figure NF (dB) 100 1k 10 k 100 k Noise Figure NF (dB) 100 1k Frequency f (Hz) 10 k 100 k Signal Source Resistance Rg (Ω) Rev.2.00 Aug 10, 2005 page 4 of 5 2SK435 Package Dimensions JEITA Package Code SC-43A RENESAS Code PRSS0003DA-C Package Name TO-92(2) / TO-92(2)V MASS[Typ.] 0.25g Unit: mm 4.8 ± 0.3 3.8 ± 0.3 2.3 Max 0.5 Max 0.7 0.60 Max 12.7 Min 5.0 ± 0.2 0.5 Max 1.27 2.54 Ordering Information Part Name 2SK435CTZ 2SK435DTZ Quantity 2500 2500 Shipping Container Radial taping, Hold box Radial taping, Hold box Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005 page 5 of 5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: 2-796-3115, Fax: 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: 7955-9390, Fax: 7955-9510 © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0