3850 Group (Spec.A) Standard characteristics
1 Standard characteristics
Standard characteristics described below are just examples of the 3850 Group (spec. A)’s characteristics and are not guaranteed. For rated values, refer to “ 3.1 Electrical characteristics” o f Datasheet. 1.1 Flash memory version power source current standard characteristics Figure. 1 to Figure. 7 show flash memory version (M38507F8A) power source current standard characteristics.
Measuring conditions : 25 °C, f(X IN) = 12.5 MHz, in high-speed mode
12.0
Power source current Icc[mA]
10.0 Standard mode 8.0
Standard mode Wait mode
6.0
4.0 Wait mode
2.0
0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power source volage Vcc[V]
Fig. 1
Flash memory version power source current standard characteristics (in high-speed mode, f(X IN) = 12.5 MHz)
Measuring conditions : 25 ° C, f(X IN) = 8 MHz, in high-speed mode
12.0
Power source current Icc [mA]
10.0
8.0
Standard mode Wait mode
6.0
Standard mode
4.0
2.0
Wait mode
0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power source voltage Vcc[V]
Fig. 2
Flash memory version power source current standard characteristics (in high-speed mode, f(X IN) = 8 MHz)
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3850 Group (Spec.A) Standard characteristics
Measuring conditions : 25 ° C, f(X IN) = 4 MHz, in high-speed mode
12.0
Power source current Icc[mA]
10.0 8.0
Standard mode Wait mode
6.0
4.0 2.0
Standard mode Wait mode
0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power source voltage Vcc[V]
Fig. 3
Flash memory version power source current standard characteristics (in high-speed mode, f(X IN) = 4 MHz)
Measuring conditions : 25 ° C, f(X IN) = 12.5 MHz, in middle-speed mode
5.0
Power source current Icc[mA]
4.0
3.0 Standard mode 2.0
Standard mode Wait mode
1.0 Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power source voltage Vcc[V]
Fig. 4
Flash memory version power source current standard characteristics (in middle-speed mode, f(X IN) = 12.5 MHz)
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3850 Group (Spec.A) Standard characteristics
Measuring conditions : 25 ° C, f(X IN) = 8 MHz, in middle-speed mode
5.0
Power source current Icc[mA]
4.0
3.0
Standard mode Wait mode
2.0
Standard mode
1.0 Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power source voltage Vcc[V]
Fig. 5
Flash memory version power source current standard characteristics (in middle-speed mode, f(X IN) = 8 MHz)
Measuring conditions : 25 ° C, f(X IN) = 4 MHz, in middle-speed mode
5.0
Power source current Icc[mA]
4.0
3.0
Standard mode Wait mode
2.0 Standard mode 1.0 Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power source voltage Vcc[V]
Fig. 6
Flash memory version power source current standard characteristics (in middle-speed mode, f(X IN) = 4 MHz)
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3850 Group (Spec.A) Standard characteristics
Measuring conditions : 25 ° C, f(X IN) = 32 kHz, in low-speed mode
250
Power source current Icc [µ A] µ
200
150
Standard mode
Standard mode Wait mode
100
50 Wait mode 0 2.0
2.5
3.0
3.5 4.0 Power source voltage Vcc [V]
4.5
5.0
5.5
Fig. 7 Flash memory version power source current standard characteristics (in low-speed mode)
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3850 Group (Spec.A) Standard characteristics
1.2 Mask ROM version power source current standard characteristics Figure. 8 – F igure. 14 show mask ROM version (M38503M2A, M38503M4A, M38504M6A, M38507M8A) power source current standard characteristics.
Measuring conditions : 25 ° C, f(X IN) = 12.5 MHz, in high-speed mode
6.0 5.0
Standard mode
Power source current Icc [mA]
4.0 3.0 2.0 1.0 0.0 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V]
Standard mode Wait mode
Wait mode
Fig. 8
Mask ROM version power source current standard characteristics (in high-speed mode, f(X IN) = 12.5 MHz)
Measuring conditions : 25 ° C, f(XIN) = 8 MHz, in high-speed mode
6.0 5.0 4.0
Standard mode
Power source current Icc [mA]
3.0 2.0
Wait mode
Standard mode Wait mode
1.0 0.0 2 2.5 3 3.5 4 4.5 5 5.5
Power source voltage Vcc[V]
Fig. 9
Mask ROM version power source current standard characteristics (in high-speed mode, f(X IN) = 8 MHz)
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3850 Group (Spec.A) Standard characteristics
Measuring conditions : 25 ° C, f(X IN) = 4 MHz, in high-speed mode
6.0
Power source current Icc [mA]
5.0
4.0 3.0
Standard mode
Standard mode Wait mode
2.0
1.0 0.0 2.0
Wait mode
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power source voltage Vcc[V]
Fig. 10 Mask ROM version power source current standard characteristics (in high-speed mode, f(X IN) = 4 MHz)
Measuring conditions : 25 ° C, f(XIN) = 12.5 MHz, in middle-speed mode
4.0
Power source current Icc [mA]
3.0
2.0
Standard mode
Standard mode Wait mode
1.0 Wait mode
0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power source voltage Vcc[V]
Fig. 11 Mask ROM version power source current standard characteristics (in middle-speed mode, f(X IN) = 12.5 MHz)
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3850 Group (Spec.A) Standard characteristics
Measuring conditions : 25 ° C, f(X IN) = 8 MHz, in middle-speed mode
4.0
Power source current Icc [mA]
3.0
2.0
Standard mode
Standard mode Wait mode
1.0
Wait mode
0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Power source voltage Vcc[V]
Fig. 12 Mask ROM version power source current standard characteristics (in middle-speed mode, f(X IN) = 8 MHz)
Measuring conditions : 25 ° C, f(X IN) = 4 MHz, in middle-speed mode
4.0
Power source current Icc [mA]
3.0
2.0
Standard mode Wait mode
1.0
Standard mode
Wait mode
0.0 2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power source voltage Vcc[V]
Fig. 13 Mask ROM version power source current standard characteristics (in middle-speed mode, f(X IN) = 4 MHz)
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3850 Group (Spec.A) Standard characteristics
Measuring conditions : 25 ° C, f(X IN) = 32 kHz, in low-speed mode
35
30
Power source current Icc [µ A]
25
20 Standard mode Wait mode 15 Standard mode
10 Wait mode 5
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power source voltage Vcc [V]
Fig. 14 Mask ROM version power source current standard characteristics (in low-speed mode)
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3850 Group (Spec.A) Standard characteristics
1.3 Flash memory version port standard characteristics Figure. 15, Figure. 16, Figure. 17 and Figure. 18 show flash memory version (M38507F8A) port standard characteristics.
Port P00 IOH-VOH characteristics (P-channel drive) [Ta = 25 °C] (Same characteristics pins : P0, P1, P20, P21, P24–P27, P3, P4)
–50 –45 –40 –35
Vcc = 5.0 V Vcc = 4.0 V
IOH –30 [mA] –25
–20 –15 –10 –5 0 0 0.5 1.0 1.5 2.0
Vcc = 2.7 V
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VOH [V]
Fig. 15 CMOS output port P-channel side characteristics (Ta = 25 °C)
Port P00 IOL-VOL characteristics (N-channel drive) [Ta = 25 °C] (Same characteristics pins : P0, P20, P21, P24–P27, P3, P4)
50 45 40 35
Vcc=5.0V
IOL [mA]
30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vcc=4.0V
Vcc=2.7V
4.5
5.0
5.5
VOL
Fig. 16 CMOS output port N-channel side characteristics (Ta = 25 °C)
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3850 Group (Spec.A) Standard characteristics
Port P22 IOL-VOL characteristics (N-channel drive) [Ta = 25 °C] (Same characteristics pins : P22, P23)
50 45 40 35
Vcc=5.0V
IOL [mA]
30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vcc=4.0V
Vcc=2.7V
4.5
5.0
5.5
VOL
Fig. 17 N-channel open-drain output port N-channel side characteristics (Ta = 25 °C)
Port P17 IOL-VOL characteristics (N-channel drive) [Ta = 25 °C] (Same characteristics pins : P1)
100 90 80 70
Vcc = 5 V
IOL [mA]
60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Vcc = 4.0 V
Vcc = 2.7 V
4.0
4.5
5.0
5.5
VOL [V]
Fig. 18 CMOS large current output port N-channel side characteristics (Ta = 25 °C)
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3850 Group (Spec.A) Standard characteristics
1.4 Mask ROM version port standard characteristics Figure. 19, Figure. 20, Figure. 21 and Figure. 22 show mask ROM version (M38503M2HA, M38503M4HA, M38504M6A, M38507M8A) port standard characteristics.
Port P00 IOH -V OH c haracteristics (P-channel drive) [Ta = 25 ° C] (Same characteristics pins : P0, P1, P2 0, P21 , P24 -P27 , P3, P4)
-50 -45 -40 -35
Vcc=5.0V
IOH [mA]
-30 -25 -20
Vcc=4.0V
Vcc=2.7V
-15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
VOH [V]
Fig. 19 CMOS output port P-channel side characteristics (Ta = 25 °C)
Port P0 0 I OL-V OL c haracteristics (N-channel drive) [Ta = 25 ° C] (Same characteristics pins : P0, P2 0, P21 , P24 -P27 , P3, P4)
50 45 40
Vcc=5.0V
35 30
IOL [mA]
Vcc=4.0V
25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VOL [V]
Vcc=2.7V
Fig. 20 CMOS output port N-channel side characteristics (Ta = 25 °C)
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3850 Group (Spec.A) Standard characteristics
Port P22 IOL-V OL c haracteristics (N-channel drive) [Ta = 25 ° C] (Same characteristics pins : P2 2, P2 3)
50 45 40
Vcc=5.0V
35 30
IOL [mA]
Vcc=4.0V
25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VOL [V]
Vcc=2.7V
Fig. 21 N-channel open-drain output port N-channel side characteristics (Ta = 25 °C)
Port P10 IOL-V OL c haracteristics (N-channel drive) [Ta = 25 ° C] (Same characteristics pins : P1)
100 90 80 70
Vcc=5.0V
60
IOL [mA]
50
Vcc=4.0V
40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VOL [V]
Vcc=2.7V
Fig. 22 CMOS large current output port N-channel side characteristics (Ta = 25 °C)
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3850 Group (Spec.A) Standard characteristics
1.5 A-D conversion standard characteristics (1) Definition of A-D conversion accuracy The A-D conversion accuracy is defined below. q Relative accuracy ➀ Z ero transition voltage (V0T) This means an analog input voltage when the actual A-D conversion output data changes from “0” to “ 1 ” . ➁ F ull-scale transition voltage (VFST) This means an analog input voltage when the actual A-D conversion output data changes from “ 1023 ” t o “ 1022 ” . ➂ L inearity error This means a deviation from the lone between V0T and VFST of a converted value between V0T and VFST. ➃ D ifferential non-linearity error This means a deviation from the input potential difference required to change a converted value between V 0T a nd V FST b y 1 LSB of the 1 LSB at the relative accuracy. q Absolute accuracy This means a deviation from the ideal characteristics between 0 to V REF of actual A-D conversion characteristics.
Output data Full-scale transition voltage (VFST)
1023 1022
b a
n+1 n
Actual A-D conversion characteristics c
Ideal line of A-D conversion between V0 to V1022
1 0
V0 V1 Zero transition voltage (V0T) Differential non-linearity error = b-a [LSB] a c Linearity error = a [LSB] 1 LSB at relative accuracy = VFST-V0T 1022 VREF 1024
Vn
Vn+1
V1022 Analog voltage
VREF
Vn : Analog input voltage when the output data changes from “n” to “n + 1” (n = 0 to 1022) a : 1 LSB at relative accuracy b : Vn+1 –Vn c : Difference between the aideal Vn and actual Vn
[LSB]
1 LSB at absolute accuracy =
[LSB]
Fig. 23 Definition of A-D conversion accuracy
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3850 Group (Spec.A) Standard characteristics
(2) A-D conversion standard characteristics Figure. 24 – Figure. 27 show the A-D conversion standard characteristics of flash memory version, mask ROM version, and PROM version, respectively. The thick lines of the graph indicate the absolute precision errors, These are expressed as the deviation from the ideal value when the output code changes. For example, the change in output code from 256 to 257 should occur at 1280 mV, but the measured value is 2.5 mV. Accordingly, the measured point of change is 1280 + 2.5 = 1282.5 mV. The thin lines of the graph indicate the input voltage width for which the output code is constant. For example, the measured input voltage width for which the output code is 256 is 5.0 mV, so that the differential non-linear error is 5.0 – 5 .0 = 0 mV (0 LSB).
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3850 Group (Spec.A) Standard characteristics
38507F8A A-D CONV. ERROR & STEP WIDTH
= 5.12 [V] : VREF = 5.12 [V] = 12 [MHz] : Ta = 25 [deg.]
Zero transition voltage Full-scale transition voltage Differential non-linearity error Linearity error Absolute accuracy
15
: 7. 188 [mV] : 5122. 500 [mV] : -3. 911 [mV] : 6. 245 [mV] : 11. 562 [mV]
-. 781 [LSB] 1. 248 [LSB] 2. 312 [LSB]
Error 1LSB Width (Absolute accuracy error)
ERROR/1LSB WIDTH (mV)
10 5 0 -5 -10 -15 0 16 32 48 64 80 96 112 128 STEP No. 144 160 176 192 208 224 240 256
15
ERROR/1LSB WIDTH (mV)
)
10 5 0 -5 -10 -15 256
(
272
288
304
320
336
352
368
384 STEP No.
400
416
432
448
464
480
496
512
ERROR/1LSB WIDTH (mV)
15 10 5 0 -5 -10 -15 512
(
)
528
544
560
576
592
608
624
640 STEP No.
656
672
688
704
720
736
752
768
ERROR/1LSB WIDTH (mV)
15 10 5 0 -5 -10 -15 768
O/
S
(
)
784
800
816
832
848
864
880
896 STEP No.
912
928
944
960
976
992
1008
1024
Fig. 24 Flash memory version (M38507F8A) A-D conversion standard characteristics (X IN=12MHz)
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3850 Group (Spec.A) Standard characteristics
M38507F8A A-D CONVERTER ERROR & STEP WIDTH MEASUREMENT
VCC = 5.12 [V], VREF = 5.12 [V] XIN = 8 [MHz], Ta = 25 [deg.] Zero transition voltage Full-scale transition voltage Differential non-linearity error Linearity error Absolute accuracy : 10.625 [mV] : 5122.812 [mV] : 1.719 [mV] : –5.659 [mV] : 8.906 [mV]
: 0.344 [LSB] : –1.131 [LSB] : 1.781 [LSB]
: Error (Absolute accuracy error) : 1LSB Width
ERROR/1LSB WIDTH (mV)
15.0 10.0 5.0 0.0 –5.0 –10.0 –15.0 15.0 10.0 5.0 0.0 –5.0 –10.0 –15.0 15.0 10.0 5.0 0.0 –5.0 –10.0 –15.0 15.0 10.0 5.0 0.0 –5.0 –10.0 –15.0 768 784 800 816 832 848 864 880 896 912 928 944 960 976 992 1008 1024 512 528 544 560 576 592 608 624 640 656 672 688 704 720 736 752 768 256 272 288 304 320 336 352 368 384 400 416 432 448 464 480 496 512 0 16 32 48 64 80 96 112 128 144 160 176 192 208 224 240 256
STEP No.
ERROR/1LSB WIDTH (mV)
STEP No.
ERROR/1LSB WIDTH (mV)
STEP No.
ERROR/1LSB WIDTH (mV)
STEP No.
Fig. 25 Flash memory version (M38507F8A) A-D conversion standard characteristics (X IN=8MHz)
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3850 Group (Spec.A) Standard characteristics
M38503M2A, M38503M4A, M38504M6A, M38507M8A A-D CONV. ERROR & STEP WIDTH
Vcc = 5. 12 [V] : VREF = 5. 12 [V] XIN = 12 [MHz] : Ta = 25 [deg.] : : : : : -2500 [mV] 5110. 000 [mV] -4. 846 [mV] 11. 411 [mV] -7. 500 [mV]
Zero transition voltage Full-scale transition voltage Differential non-linearity error Linearity error Absolute accuracy
20
-. 969 [LSB] -2. 281 [LSB] -1. 500 [LSB]
Error 1LSB Width (Absolute accuracy error)
ERROR/1LSB WIDTH (mV)
15 10 5 0 -5 -10 -15 -20 0 16 32 48 64 80 96 112 128 STEP No. 20 144 160 176 192 208 224 240 256
ERROR/1LSB WIDTH (mV)
15 10 5 0 -5 -10 -15 -20 256 272 288 304 320 336 352 368 384 STEP No. 20 400 416 432 448 464 480 496 512
ERROR/1LSB WIDTH (mV)
15 10 5 0 -5 -10 -15 -20 512 528 544 560 576 592 608 624 640 STEP No. 20 656 672 688 704 720 736 752 768
ERROR/1LSB WIDTH (mV)
15 10 5 0 -5 -10 -15 -20 768 784 800 816 832 848 864 880 896 STEP No. 912 928 944 960 976 992 1008 1024
Fig. 26 Mask ROM version (M38503M2A, M38503M4A, M38504M6A, M38507M8A) A-D conversion standard characteristics (X IN=12MHz)
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3850 Group (Spec.A) Standard characteristics
M38503M2A, M38503M4A, M38504M6A, M38507M8A A-D CONV. ERROR & STEP WIDTH
Vcc = 5. 12 [V] : VREF = 5. 12 [V] XIN = 8 [MHz] : Ta = 25 [deg.] : : : : : 11. 250 [mV] 5119. 375 [mV] -3. 592 [mV] -8. 252 [mV] 6. 250 [mV]
Zero transition voltage Full-scale transition voltage Differential non-linearity error Linearity error Absolute accuracy
20
-. 719 [LSB] -1. 651 [LSB] 1. 250 [LSB]
Error 1LSB Width (Absolute accuracy error)
ERROR/1LSB WIDTH (mV)
15 10 5 0 -5 -10 -15 -20 0 16 32 48 64 80 96 112 128 STEP No. 20 144 160 176 192 208 224 240 256
ERROR/1LSB WIDTH (mV)
15 10 5 0 -5 -10 -15 -20 256 272 288 304 320 336 352 368 384 STEP No. 20 400 416 432 448 464 480 496 512
ERROR/1LSB WIDTH (mV)
15 10 5 0 -5 -10 -15 -20 512 528 544 560 576 592 608 624 640 STEP No. 20 656 672 688 704 720 736 752 768
ERROR/1LSB WIDTH (mV)
15 10 5 0 -5 -10 -15 -20 768 784 800 816 832 848 864 880 896 STEP No. 912 928 944 960 976 992 1008 1024
Fig. 27 Mask ROM version (M38503M2A, M38503M4A, M38504M6A, M38507M8A) A-D conversion standard characteristics (X IN=8MHz)
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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April 1st, 2010 Renesas Electronics Corporation
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