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3850_05

3850_05

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    3850_05 - (Spec.A) Standard characteristics - Renesas Technology Corp

  • 数据手册
  • 价格&库存
3850_05 数据手册
3850 Group (Spec.A) Standard characteristics 1 Standard characteristics Standard characteristics described below are just examples of the 3850 Group (spec. A)’s characteristics and are not guaranteed. For rated values, refer to “ 3.1 Electrical characteristics” o f Datasheet. 1.1 Flash memory version power source current standard characteristics Figure. 1 to Figure. 7 show flash memory version (M38507F8A) power source current standard characteristics. Measuring conditions : 25 °C, f(X IN) = 12.5 MHz, in high-speed mode 12.0 Power source current Icc[mA] 10.0 Standard mode 8.0 Standard mode Wait mode 6.0 4.0 Wait mode 2.0 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source volage Vcc[V] Fig. 1 Flash memory version power source current standard characteristics (in high-speed mode, f(X IN) = 12.5 MHz) Measuring conditions : 25 ° C, f(X IN) = 8 MHz, in high-speed mode 12.0 Power source current Icc [mA] 10.0 8.0 Standard mode Wait mode 6.0 Standard mode 4.0 2.0 Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V] Fig. 2 Flash memory version power source current standard characteristics (in high-speed mode, f(X IN) = 8 MHz) REJ99B1073-0100/Rev1.00 November 2005 Page 1 of 18 3850 Group (Spec.A) Standard characteristics Measuring conditions : 25 ° C, f(X IN) = 4 MHz, in high-speed mode 12.0 Power source current Icc[mA] 10.0 8.0 Standard mode Wait mode 6.0 4.0 2.0 Standard mode Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V] Fig. 3 Flash memory version power source current standard characteristics (in high-speed mode, f(X IN) = 4 MHz) Measuring conditions : 25 ° C, f(X IN) = 12.5 MHz, in middle-speed mode 5.0 Power source current Icc[mA] 4.0 3.0 Standard mode 2.0 Standard mode Wait mode 1.0 Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V] Fig. 4 Flash memory version power source current standard characteristics (in middle-speed mode, f(X IN) = 12.5 MHz) REJ99B1073-0100/Rev1.00 November 2005 Page 2 of 18 3850 Group (Spec.A) Standard characteristics Measuring conditions : 25 ° C, f(X IN) = 8 MHz, in middle-speed mode 5.0 Power source current Icc[mA] 4.0 3.0 Standard mode Wait mode 2.0 Standard mode 1.0 Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V] Fig. 5 Flash memory version power source current standard characteristics (in middle-speed mode, f(X IN) = 8 MHz) Measuring conditions : 25 ° C, f(X IN) = 4 MHz, in middle-speed mode 5.0 Power source current Icc[mA] 4.0 3.0 Standard mode Wait mode 2.0 Standard mode 1.0 Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V] Fig. 6 Flash memory version power source current standard characteristics (in middle-speed mode, f(X IN) = 4 MHz) REJ99B1073-0100/Rev1.00 November 2005 Page 3 of 18 3850 Group (Spec.A) Standard characteristics Measuring conditions : 25 ° C, f(X IN) = 32 kHz, in low-speed mode 250 Power source current Icc [µ A] µ 200 150 Standard mode Standard mode Wait mode 100 50 Wait mode 0 2.0 2.5 3.0 3.5 4.0 Power source voltage Vcc [V] 4.5 5.0 5.5 Fig. 7 Flash memory version power source current standard characteristics (in low-speed mode) REJ99B1073-0100/Rev1.00 November 2005 Page 4 of 18 3850 Group (Spec.A) Standard characteristics 1.2 Mask ROM version power source current standard characteristics Figure. 8 – F igure. 14 show mask ROM version (M38503M2A, M38503M4A, M38504M6A, M38507M8A) power source current standard characteristics. Measuring conditions : 25 ° C, f(X IN) = 12.5 MHz, in high-speed mode 6.0 5.0 Standard mode Power source current Icc [mA] 4.0 3.0 2.0 1.0 0.0 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V] Standard mode Wait mode Wait mode Fig. 8 Mask ROM version power source current standard characteristics (in high-speed mode, f(X IN) = 12.5 MHz) Measuring conditions : 25 ° C, f(XIN) = 8 MHz, in high-speed mode 6.0 5.0 4.0 Standard mode Power source current Icc [mA] 3.0 2.0 Wait mode Standard mode Wait mode 1.0 0.0 2 2.5 3 3.5 4 4.5 5 5.5 Power source voltage Vcc[V] Fig. 9 Mask ROM version power source current standard characteristics (in high-speed mode, f(X IN) = 8 MHz) REJ99B1073-0100/Rev1.00 November 2005 Page 5 of 18 3850 Group (Spec.A) Standard characteristics Measuring conditions : 25 ° C, f(X IN) = 4 MHz, in high-speed mode 6.0 Power source current Icc [mA] 5.0 4.0 3.0 Standard mode Standard mode Wait mode 2.0 1.0 0.0 2.0 Wait mode 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V] Fig. 10 Mask ROM version power source current standard characteristics (in high-speed mode, f(X IN) = 4 MHz) Measuring conditions : 25 ° C, f(XIN) = 12.5 MHz, in middle-speed mode 4.0 Power source current Icc [mA] 3.0 2.0 Standard mode Standard mode Wait mode 1.0 Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V] Fig. 11 Mask ROM version power source current standard characteristics (in middle-speed mode, f(X IN) = 12.5 MHz) REJ99B1073-0100/Rev1.00 November 2005 Page 6 of 18 3850 Group (Spec.A) Standard characteristics Measuring conditions : 25 ° C, f(X IN) = 8 MHz, in middle-speed mode 4.0 Power source current Icc [mA] 3.0 2.0 Standard mode Standard mode Wait mode 1.0 Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V] Fig. 12 Mask ROM version power source current standard characteristics (in middle-speed mode, f(X IN) = 8 MHz) Measuring conditions : 25 ° C, f(X IN) = 4 MHz, in middle-speed mode 4.0 Power source current Icc [mA] 3.0 2.0 Standard mode Wait mode 1.0 Standard mode Wait mode 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc[V] Fig. 13 Mask ROM version power source current standard characteristics (in middle-speed mode, f(X IN) = 4 MHz) REJ99B1073-0100/Rev1.00 November 2005 Page 7 of 18 3850 Group (Spec.A) Standard characteristics Measuring conditions : 25 ° C, f(X IN) = 32 kHz, in low-speed mode 35 30 Power source current Icc [µ A] 25 20 Standard mode Wait mode 15 Standard mode 10 Wait mode 5 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power source voltage Vcc [V] Fig. 14 Mask ROM version power source current standard characteristics (in low-speed mode) REJ99B1073-0100/Rev1.00 November 2005 Page 8 of 18 3850 Group (Spec.A) Standard characteristics 1.3 Flash memory version port standard characteristics Figure. 15, Figure. 16, Figure. 17 and Figure. 18 show flash memory version (M38507F8A) port standard characteristics. Port P00 IOH-VOH characteristics (P-channel drive) [Ta = 25 °C] (Same characteristics pins : P0, P1, P20, P21, P24–P27, P3, P4) –50 –45 –40 –35 Vcc = 5.0 V Vcc = 4.0 V IOH –30 [mA] –25 –20 –15 –10 –5 0 0 0.5 1.0 1.5 2.0 Vcc = 2.7 V 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VOH [V] Fig. 15 CMOS output port P-channel side characteristics (Ta = 25 °C) Port P00 IOL-VOL characteristics (N-channel drive) [Ta = 25 °C] (Same characteristics pins : P0, P20, P21, P24–P27, P3, P4) 50 45 40 35 Vcc=5.0V IOL [mA] 30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vcc=4.0V Vcc=2.7V 4.5 5.0 5.5 VOL Fig. 16 CMOS output port N-channel side characteristics (Ta = 25 °C) REJ99B1073-0100/Rev1.00 November 2005 Page 9 of 18 3850 Group (Spec.A) Standard characteristics Port P22 IOL-VOL characteristics (N-channel drive) [Ta = 25 °C] (Same characteristics pins : P22, P23) 50 45 40 35 Vcc=5.0V IOL [mA] 30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vcc=4.0V Vcc=2.7V 4.5 5.0 5.5 VOL Fig. 17 N-channel open-drain output port N-channel side characteristics (Ta = 25 °C) Port P17 IOL-VOL characteristics (N-channel drive) [Ta = 25 °C] (Same characteristics pins : P1) 100 90 80 70 Vcc = 5 V IOL [mA] 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Vcc = 4.0 V Vcc = 2.7 V 4.0 4.5 5.0 5.5 VOL [V] Fig. 18 CMOS large current output port N-channel side characteristics (Ta = 25 °C) REJ99B1073-0100/Rev1.00 November 2005 Page 10 of 18 3850 Group (Spec.A) Standard characteristics 1.4 Mask ROM version port standard characteristics Figure. 19, Figure. 20, Figure. 21 and Figure. 22 show mask ROM version (M38503M2HA, M38503M4HA, M38504M6A, M38507M8A) port standard characteristics. Port P00 IOH -V OH c haracteristics (P-channel drive) [Ta = 25 ° C] (Same characteristics pins : P0, P1, P2 0, P21 , P24 -P27 , P3, P4) -50 -45 -40 -35 Vcc=5.0V IOH [mA] -30 -25 -20 Vcc=4.0V Vcc=2.7V -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VOH [V] Fig. 19 CMOS output port P-channel side characteristics (Ta = 25 °C) Port P0 0 I OL-V OL c haracteristics (N-channel drive) [Ta = 25 ° C] (Same characteristics pins : P0, P2 0, P21 , P24 -P27 , P3, P4) 50 45 40 Vcc=5.0V 35 30 IOL [mA] Vcc=4.0V 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VOL [V] Vcc=2.7V Fig. 20 CMOS output port N-channel side characteristics (Ta = 25 °C) REJ99B1073-0100/Rev1.00 November 2005 Page 11 of 18 3850 Group (Spec.A) Standard characteristics Port P22 IOL-V OL c haracteristics (N-channel drive) [Ta = 25 ° C] (Same characteristics pins : P2 2, P2 3) 50 45 40 Vcc=5.0V 35 30 IOL [mA] Vcc=4.0V 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VOL [V] Vcc=2.7V Fig. 21 N-channel open-drain output port N-channel side characteristics (Ta = 25 °C) Port P10 IOL-V OL c haracteristics (N-channel drive) [Ta = 25 ° C] (Same characteristics pins : P1) 100 90 80 70 Vcc=5.0V 60 IOL [mA] 50 Vcc=4.0V 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 VOL [V] Vcc=2.7V Fig. 22 CMOS large current output port N-channel side characteristics (Ta = 25 °C) REJ99B1073-0100/Rev1.00 November 2005 Page 12 of 18 3850 Group (Spec.A) Standard characteristics 1.5 A-D conversion standard characteristics (1) Definition of A-D conversion accuracy The A-D conversion accuracy is defined below. q Relative accuracy ➀ Z ero transition voltage (V0T) This means an analog input voltage when the actual A-D conversion output data changes from “0” to “ 1 ” . ➁ F ull-scale transition voltage (VFST) This means an analog input voltage when the actual A-D conversion output data changes from “ 1023 ” t o “ 1022 ” . ➂ L inearity error This means a deviation from the lone between V0T and VFST of a converted value between V0T and VFST. ➃ D ifferential non-linearity error This means a deviation from the input potential difference required to change a converted value between V 0T a nd V FST b y 1 LSB of the 1 LSB at the relative accuracy. q Absolute accuracy This means a deviation from the ideal characteristics between 0 to V REF of actual A-D conversion characteristics. Output data Full-scale transition voltage (VFST) 1023 1022 b a n+1 n Actual A-D conversion characteristics c Ideal line of A-D conversion between V0 to V1022 1 0 V0 V1 Zero transition voltage (V0T) Differential non-linearity error = b-a [LSB] a c Linearity error = a [LSB] 1 LSB at relative accuracy = VFST-V0T 1022 VREF 1024 Vn Vn+1 V1022 Analog voltage VREF Vn : Analog input voltage when the output data changes from “n” to “n + 1” (n = 0 to 1022) a : 1 LSB at relative accuracy b : Vn+1 –Vn c : Difference between the aideal Vn and actual Vn [LSB] 1 LSB at absolute accuracy = [LSB] Fig. 23 Definition of A-D conversion accuracy REJ99B1073-0100/Rev1.00 November 2005 Page 13 of 18 3850 Group (Spec.A) Standard characteristics (2) A-D conversion standard characteristics Figure. 24 – Figure. 27 show the A-D conversion standard characteristics of flash memory version, mask ROM version, and PROM version, respectively. The thick lines of the graph indicate the absolute precision errors, These are expressed as the deviation from the ideal value when the output code changes. For example, the change in output code from 256 to 257 should occur at 1280 mV, but the measured value is 2.5 mV. Accordingly, the measured point of change is 1280 + 2.5 = 1282.5 mV. The thin lines of the graph indicate the input voltage width for which the output code is constant. For example, the measured input voltage width for which the output code is 256 is 5.0 mV, so that the differential non-linear error is 5.0 – 5 .0 = 0 mV (0 LSB). REJ99B1073-0100/Rev1.00 November 2005 Page 14 of 18 3850 Group (Spec.A) Standard characteristics 38507F8A A-D CONV. ERROR & STEP WIDTH = 5.12 [V] : VREF = 5.12 [V] = 12 [MHz] : Ta = 25 [deg.] Zero transition voltage Full-scale transition voltage Differential non-linearity error Linearity error Absolute accuracy 15 : 7. 188 [mV] : 5122. 500 [mV] : -3. 911 [mV] : 6. 245 [mV] : 11. 562 [mV] -. 781 [LSB] 1. 248 [LSB] 2. 312 [LSB] Error 1LSB Width (Absolute accuracy error) ERROR/1LSB WIDTH (mV) 10 5 0 -5 -10 -15 0 16 32 48 64 80 96 112 128 STEP No. 144 160 176 192 208 224 240 256 15 ERROR/1LSB WIDTH (mV) ) 10 5 0 -5 -10 -15 256 ( 272 288 304 320 336 352 368 384 STEP No. 400 416 432 448 464 480 496 512 ERROR/1LSB WIDTH (mV) 15 10 5 0 -5 -10 -15 512 ( ) 528 544 560 576 592 608 624 640 STEP No. 656 672 688 704 720 736 752 768 ERROR/1LSB WIDTH (mV) 15 10 5 0 -5 -10 -15 768 O/ S ( ) 784 800 816 832 848 864 880 896 STEP No. 912 928 944 960 976 992 1008 1024 Fig. 24 Flash memory version (M38507F8A) A-D conversion standard characteristics (X IN=12MHz) REJ99B1073-0100/Rev1.00 November 2005 Page 15 of 18 3850 Group (Spec.A) Standard characteristics M38507F8A A-D CONVERTER ERROR & STEP WIDTH MEASUREMENT VCC = 5.12 [V], VREF = 5.12 [V] XIN = 8 [MHz], Ta = 25 [deg.] Zero transition voltage Full-scale transition voltage Differential non-linearity error Linearity error Absolute accuracy : 10.625 [mV] : 5122.812 [mV] : 1.719 [mV] : –5.659 [mV] : 8.906 [mV] : 0.344 [LSB] : –1.131 [LSB] : 1.781 [LSB] : Error (Absolute accuracy error) : 1LSB Width ERROR/1LSB WIDTH (mV) 15.0 10.0 5.0 0.0 –5.0 –10.0 –15.0 15.0 10.0 5.0 0.0 –5.0 –10.0 –15.0 15.0 10.0 5.0 0.0 –5.0 –10.0 –15.0 15.0 10.0 5.0 0.0 –5.0 –10.0 –15.0 768 784 800 816 832 848 864 880 896 912 928 944 960 976 992 1008 1024 512 528 544 560 576 592 608 624 640 656 672 688 704 720 736 752 768 256 272 288 304 320 336 352 368 384 400 416 432 448 464 480 496 512 0 16 32 48 64 80 96 112 128 144 160 176 192 208 224 240 256 STEP No. ERROR/1LSB WIDTH (mV) STEP No. ERROR/1LSB WIDTH (mV) STEP No. ERROR/1LSB WIDTH (mV) STEP No. Fig. 25 Flash memory version (M38507F8A) A-D conversion standard characteristics (X IN=8MHz) REJ99B1073-0100/Rev1.00 November 2005 Page 16 of 18 3850 Group (Spec.A) Standard characteristics M38503M2A, M38503M4A, M38504M6A, M38507M8A A-D CONV. ERROR & STEP WIDTH Vcc = 5. 12 [V] : VREF = 5. 12 [V] XIN = 12 [MHz] : Ta = 25 [deg.] : : : : : -2500 [mV] 5110. 000 [mV] -4. 846 [mV] 11. 411 [mV] -7. 500 [mV] Zero transition voltage Full-scale transition voltage Differential non-linearity error Linearity error Absolute accuracy 20 -. 969 [LSB] -2. 281 [LSB] -1. 500 [LSB] Error 1LSB Width (Absolute accuracy error) ERROR/1LSB WIDTH (mV) 15 10 5 0 -5 -10 -15 -20 0 16 32 48 64 80 96 112 128 STEP No. 20 144 160 176 192 208 224 240 256 ERROR/1LSB WIDTH (mV) 15 10 5 0 -5 -10 -15 -20 256 272 288 304 320 336 352 368 384 STEP No. 20 400 416 432 448 464 480 496 512 ERROR/1LSB WIDTH (mV) 15 10 5 0 -5 -10 -15 -20 512 528 544 560 576 592 608 624 640 STEP No. 20 656 672 688 704 720 736 752 768 ERROR/1LSB WIDTH (mV) 15 10 5 0 -5 -10 -15 -20 768 784 800 816 832 848 864 880 896 STEP No. 912 928 944 960 976 992 1008 1024 Fig. 26 Mask ROM version (M38503M2A, M38503M4A, M38504M6A, M38507M8A) A-D conversion standard characteristics (X IN=12MHz) REJ99B1073-0100/Rev1.00 November 2005 Page 17 of 18 3850 Group (Spec.A) Standard characteristics M38503M2A, M38503M4A, M38504M6A, M38507M8A A-D CONV. ERROR & STEP WIDTH Vcc = 5. 12 [V] : VREF = 5. 12 [V] XIN = 8 [MHz] : Ta = 25 [deg.] : : : : : 11. 250 [mV] 5119. 375 [mV] -3. 592 [mV] -8. 252 [mV] 6. 250 [mV] Zero transition voltage Full-scale transition voltage Differential non-linearity error Linearity error Absolute accuracy 20 -. 719 [LSB] -1. 651 [LSB] 1. 250 [LSB] Error 1LSB Width (Absolute accuracy error) ERROR/1LSB WIDTH (mV) 15 10 5 0 -5 -10 -15 -20 0 16 32 48 64 80 96 112 128 STEP No. 20 144 160 176 192 208 224 240 256 ERROR/1LSB WIDTH (mV) 15 10 5 0 -5 -10 -15 -20 256 272 288 304 320 336 352 368 384 STEP No. 20 400 416 432 448 464 480 496 512 ERROR/1LSB WIDTH (mV) 15 10 5 0 -5 -10 -15 -20 512 528 544 560 576 592 608 624 640 STEP No. 20 656 672 688 704 720 736 752 768 ERROR/1LSB WIDTH (mV) 15 10 5 0 -5 -10 -15 -20 768 784 800 816 832 848 864 880 896 STEP No. 912 928 944 960 976 992 1008 1024 Fig. 27 Mask ROM version (M38503M2A, M38503M4A, M38504M6A, M38507M8A) A-D conversion standard characteristics (X IN=8MHz) REJ99B1073-0100/Rev1.00 November 2005 Page 18 of 18 To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 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Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. “Standard”: 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
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