CMOS Static RAM
16K (2K x 8-Bit)
Features
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6116SA
6116LA
Description
High-speed access and chip select times
– Commercial: 15/20/25ns (max.)
– Industrial: 20/25ns (max.)
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
Low-power consumption
Battery backup operation
– 2V data retention voltage (LA version only)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle soft-error
rates
Input and output directly TTL-compatible
Static operation: no clocks or refresh required
Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin
Dip and 24-pin SOIC
Military product compliant to MIL-STD-833, Class B
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized
as 2K x 8. It is fabricated using high-performance, high-reliability CMOS
technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long as CS
remains HIGH. This capability provides significant system level power and
cooling savings. The low-power (LA) version also offers a battery backup
data retention capability where the circuit typically consumes only 1µW to
4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing for
operation.
The IDT6116SA/LA is packaged in 24-pin 300mil plastic DIP, 24-pin
600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing high
board-level packing densities.
Military grade product is manufactured in compliance to MIL-STD-883,
Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
Functional Block Diagram
A0
V CC
128 X 128
MEMORY
ARRAY
ADDRESS
DECODER
GND
A10
I/O0
I/O CONTROL
INPUT
DATA
CIRCUIT
I/O7
,
CS
OE
WE
CONTROL
CIRCUIT
3089 drw 01
1
Jul.17.20
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Pin Configurations(1)
Capacitance (TA = +25°C, f = 1.0 MHZ)
Symbol
A7
A6
A5
A4
A3
A2
A1
A0
I/O 0
I/O 1
I/O 2
GND
1
2
3
4
5
6
7
8
9
10
11
12
PTG24
CD24
SD24
PSG24
24
23
22
21
20
19
18
17
16
15
14
13
VCC
A8
A9
WE
OE
A10
CS
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
Pin Description
I/O0 - I/O7
Data Input/Output
CS
Chip Select
WE
Write Enable
OE
Output Enable
VCC
Power
GND
Ground
pF
CI/O
I/O Capacitance
VOUT = 0V
8
pF
Rating
Com'l.
Mil.
Unit
-0.5 to +7.0
-0.5 to +7.0
V
VTERM
Terminal Voltage
with Respect
to GND
TA
Operating
Temperature
0 to +70
-55 to +125
o
C
TBIAS
Temperature
Under Bias
-55 to +125
-65 to +135
o
C
TSTG
Storage Temperature
-55 to +125
-65 to +150
o
C
PT
Power Dissipation
1.0
1.0
W
IOUT
DC Output Current
50
50
mA
3089 tbl 04
Truth Table(1)
CS
OE
WE
I/O
Standby
H
X
X
High-Z
Read
L
L
H
DATAOUT
Read
L
H
H
High-Z
Write
L
X
L
DATAIN
3089 tbl 02
2
Jul.17.20
8
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. VTERM must not exceed VCC +0.5V.
3089 tbl 01
NOTE:
1. H = VIH, L = VIL, X = Don't Care.
VIN = 0V
Absolute Maximum Ratings(1)
NOTE:
1. This text does not indicate orientation of actual part-marking.
Mode
Input Capacitance
(2)
Address Inputs
Unit
CIN
Symbol
A0 - A10
Max.
3089 tbl 03
DIP/SOIC
Top View
Description
Conditions
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
3089 drw 02
Name
Parameter(1)
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
Recommended DC
Operating Conditions
Ambient
Temperature
GND
Vcc
Military
-55OC to +125OC
0V
5.0V ± 10%
Industrial
-40OC to +85OC
0V
5.0V ± 10%
0OC to +70OC
0V
5.0V ± 10%
Grade
Commercial
Symbol
VCC
Supply Voltage
GND
Ground
VIH
Input High Voltage
VIL
3089 tbl 05
Parameter
Min.
Typ.
4.5
5.0
0
2.2
(1)
Input Low Voltage
-0.5
Max.
Unit
(2)
5.5
V
0
0
V
3.5
VCC +0.5
V
____
0.8
V
NOTES:
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
2. VIN must not exceed VCC +0.5V.
3089 tbl 06
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
IDT6116SA
Symbol
Parameter
Test Conditions
IDT6116LA
Min.
Max.
Min.
Max.
Unit
10
5
____
5
2
µA
10
5
____
5
2
µA
|ILI|
Input Leakage Current
VCC = Max.,
VIN = GND to VCC
MIL.
COM'L & IND
____
|ILO|
Output Leakage Current
VCC = Max., CS = VIH,
VOUT = GND to VCC
MIL.
COM'L & IND
____
VOL
Output Low Voltage
IOL = 8mA, VCC = Min.
____
0.4
____
0.4
V
VOH
Output High Voltage
IOH = -4mA, VCC = Min.
2.4
____
2.4
____
V
____
____
____
____
3089 tbl 07
DC Electrical Characteristics(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6116SA15
Symbol
ICC1
ICC2
ISB
ISB1
6116SA25
6116LA25
Power
Com'l
Only
Com'l
& Ind
Mil
Com'l
& Ind
Mil
Unit
Operating Power Supply Current
CS < VIL, Outputs Open
VCC = Max., f = 0
SA
105
105
130
100
90
mA
LA
_____
95
120
95
85
Dynamic Operating Current
CS < VIL, Outputs Open
VCC = Max., f = fMAX(2)
SA
150
130
150
120
135
LA
_____
120
140
110
125
Standby Power Supply Current
(TTL Level)
CS > VIH, Outputs Open
VCC = Max., f = fMAX(2)
SA
40
40
50
40
45
LA
_____
35
45
35
40
Full Standby Power Supply Current
(CMOS Level)
CS > VHC, V CC = Max.,
VIN < VLC or V IN > VHC, f = 0
SA
2
2
10
2
10
LA
_____
0.1
0.9
0.1
0.9
Parameter
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are cycling at fMAX, f = 0 means address inputs are not changing.
6.42
3
Jul.17.20
6116SA20
6116LA20
mA
mA
mA
3089 tbl 08
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
DC Electrical Characteristics(1) (continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6116SA35
6116LA35
6116SA45
6116LA45
6116SA55
6116LA55
6116SA70
6116LA70
6116SA90
6116LA90
6116SA120
6116LA120
6116SA150
6116LA150
Symbol
Parameter
Power
Mil Only
Mil Only
Mil Only
Mil Only
Mil Only
Mil Only
Mil Only
Unit
ICC1
Op e rating Po we r Sup p ly
Curre nt, CS < VIL,
Outp uts Op e n
VCC = Max ., f = 0
SA
90
90
90
90
90
90
90
mA
LA
85
85
85
85
85
85
85
Dynamic Op e rating
Curre nt, CS < VIL,
Outp uts Op e n
VCC = Max ., f = fMAX(2)
SA
115
100
100
100
100
100
90
LA
105
95
90
90
85
85
85
Stand b y Po we r Sup p ly
Curre nt (TTL Le ve l)
CS > VIH, Outp uts Op e n
VCC = Max ., f = fMAX(2)
SA
35
25
25
25
25
25
25
LA
30
20
20
20
25
15
15
SA
10
10
10
10
10
10
10
LA
0.9
0.9
0.9
0.9
0.9
0.9
0.9
ICC2
ISB
ISB1
Full Stand b y Po we r
Sup p ly Curre nt (CMOS
Le ve l), CS > VHC,
VCC = Max ., VIN < VLC
o r VIN > VHC, f = 0
mA
mA
mA
3089 tb l 09
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (VLC = 0.2V, VHC = VCC – 0.2V)
Max.
VCC @
Typ.(1)
VCC @
Symbol
Parameter
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR(3)
Chip Deselect to Data
Retention Time
tR(3)
Operation Recovery Time
IILII
Input Leakage Current
Test Condition
Min.
2.0V
3.0V
2.0V
3.0V
Unit
____
2.0
____
____
____
____
V
____
0.5
0.5
1.5
1.5
200
20
300
30
μA
____
0
____
____
____
ns
tRC(2)
____
____
____
____
ns
____
____
____
2
2
MIL.
COM'L.
CS > VHC
VIN > VHC or < VLC
NOTES:
1. TA = + 25°C
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
4
Jul.17.20
____
μA
3089 tbl 10
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Low VCC Data Retention Waveform
DATA RETENTION MODE
VCC
VDR ≥ 2V
4.5V
4.5V
tCDR
tR
VDR
CS
,
VIH
VIH
3089 drw 03
AC Test Conditions
GND to 3.0V
Input Pulse Levels
Input Rise/Fall Times
5ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
See Figures 1 and 2
AC Test Load
3089 tbl 11
5V
5V
480Ω
480Ω
DATAOUT
DATAOUT
255Ω
255Ω
30pF*
5pF*
,
3089 drw 05
3089 drw 04
Figure 1. AC Test Load
*Including scope and jig.
6.42
5
Jul.17.20
Figure 2. AC Test Load
(for tOLZ, tCLZ, tOHZ, tWHZ, tCHZ & tOW)
,
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)
6116SA15(1)
Symbol
Parameter
M i n.
Max.
Re ad Cy c le Time
15
Ad d re s s Ac c e s s Time
____
Chip Se le c t Ac c e s s Time
____
5
6116SA20
6116LA20
6116SA25
6116LA25
6116SA35(2)
6116LA35(2)
Min.
Max.
Unit
____
35
____
ns
25
____
35
ns
25
____
35
ns
____
5
____
ns
____
13
____
20
ns
____
5
____
5
____
ns
11
____
12
____
15
ns
8
____
10
____
13
ns
5
____
5
____
ns
0
____
0
____
ns
25
____
35
M i n.
Max.
Min.
Max.
____
20
15
____
____
25
19
____
15
____
20
____
____
____
5
____
5
____
10
____
10
Outp ut Enab le to Outp ut in Lo w-Z
0
Chip De s e le c t to Outp ut in Hig h-Z
____
0
10
____
Outp ut Dis ab le to Outp ut in Hig h-Z
____
8
____
5
____
5
____
0
____
0
____
15
____
20
____
Read Cycle
tRC
tAA
tACS
(3)
tCLZ
tOE
Chip Se le c t to Outp ut in Lo w-Z
Outp ut Enab le to Outp ut Valid
(3)
tOLZ
(3)
tCHZ
(3)
tOHZ
tOH
Outp ut Ho ld fro m Ad d re s s Chang e
(3)
tPU
(3)
tPD
Chip Se le c t to Po we r Up Time
____
Chip De s e le c t to Po we r Do wn Time
ns
3089 tb l 12
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) (continued)
6116SA45(2)
6116LA45(2)
6116SA55(2)
6116LA55(2)
6116SA70(2)
6116LA70(2)
6116SA90(2)
6116LA90(2)
6116SA120(2)
6116LA120(2)
6116SA150(2)
6116LA150(2)
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Re ad Cyc le Time
45
____
55
____
70
____
90
____
120
____
150
____
ns
Ad d re s s Ac c e s s Time
____
45
____
55
____
70
____
90
____
120
____
150
ns
Chip Se le c t Ac c e s s Time
____
45
____
50
____
65
____
90
____
120
____
150
ns
5
____
5
____
5
____
5
____
5
____
5
____
ns
____
25
____
40
____
50
____
60
____
80
____
100
ns
Symbol
Parameter
Read Cycle
tRC
tAA
tACS
(3)
tCLZ
Chip Se le c t to Outp ut in Lo w-Z
tOE
Outp ut Enab le to Outp ut Valid
tOLZ(3)
Outp ut Enab le to Outp ut in Lo w-Z
5
____
5
____
5
____
5
____
5
____
5
____
ns
tCHZ(3)
Chip De s e le c t to Outp ut in Hig h-Z
____
20
____
30
____
35
____
40
____
40
____
40
ns
tOHZ(3)
Outp ut Dis ab le to Outp ut in Hig h-Z
____
15
____
30
____
35
____
40
____
40
____
40
ns
tOH
Outp ut Ho ld fro m Ad d re s s Chang e
5
____
5
____
5
____
5
____
5
____
5
____
ns
3089 tb l 13
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested.
6
Jul.17.20
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Timing Waveform of Read Cycle No. 1(1,3)
tRC
ADDRESS
tAA
tOH
OE
tOE
CS
tOLZ (5)
tACS
tCLZ
tCHZ
ICC
(5)
(5)
DATA
VALID
DATAOUT
VCC
Supply
Currents
tOHZ (5)
tPU
ISB
,
tPD
3089 drw 06
Timing Waveform of Read Cycle No. 2(1,2,4)
tRC
ADDRESS
tAA
tOH
tOH
DATAOUT
,
DATA VALID
PREVIOUS DATA VALID
3089 drw 07
Timing Waveform of Read Cycle No. 3(1,3,4)
CS
tCLZ (5)
tACS
tCHZ
DATAOUT
(5)
,
DATA VALID
3089 drw 08
NOTES:
1. WE is HIGH for Read cycle.
2. Device is continuously selected, CS is LOW.
3. Address valid prior to or coincident with CS transition LOW.
4. OE is LOW.
5. Transition is measured ±500mV from steady state.
6.42
7
Jul.17.20
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)
6116SA15(1)
Symbol
Parameter
6116SA20
6116LA20
6116SA25
6116LA25
6116SA35(2)
6116LA35(2)
M i n.
Max.
Min.
Max.
M i n.
Max.
M i n.
Max.
Unit
15
____
20
____
25
____
35
____
ns
13
____
15
____
17
____
25
____
ns
ns
Write Cycle
tWC
tCW
Write Cyc le Time
Chip Se le c t to End -o f-Write
tAW
Ad d re s s Valid to End -o f-Write
14
____
15
____
17
____
25
____
tAS
Ad d re s s Se t-up Time
0
____
0
____
0
____
0
____
ns
tWP
Write Puls e Wid th
12
____
12
____
15
____
20
____
ns
0
____
0
____
0
____
0
____
ns
tWR
Write Re c o ve ry Time
tWHZ(3)
Write to Outp ut in Hig h-Z
____
7
____
8
____
16
____
20
ns
tDW
Data to Write Time Ove rlap
12
____
12
____
13
____
15
____
ns
tDH(4)
Data Ho ld fro m Write Time
0
____
0
____
0
____
0
____
ns
tOW(3,4)
Outp ut Ac tive fro m End -o f-Write
0
____
0
____
0
____
0
____
ns
3089 tb l 14
AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges)(con't)
Symbol
Parameter
6116SA45(2)
6116LA45(2)
6116SA55(2)
6116LA55(2)
6116SA70(2)
6116LA70(2)
6116SA90(2)
6116LA90(2)
6116SA120(2)
6116LA120(2)
6116SA150(2)
6116LA150(2)
M i n.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Write Cycle
tWC
Write Cycle Time
45
____
55
____
70
____
90
____
120
____
150
____
ns
tCW
Chip Se le ct to End -o f-Write
30
____
40
____
40
____
55
____
70
____
90
____
ns
tAW
Ad d re ss Valid to End -o f-Write
30
____
45
____
65
____
80
____
105
____
120
____
ns
tAS
Ad d re ss Se t-up Time
0
____
5
____
15
____
15
____
20
____
20
____
ns
tWP
Write Pulse Wid th
25
____
40
____
40
____
55
____
70
____
90
____
ns
0
____
5
____
5
____
5
____
5
____
10
____
ns
25
____
30
____
35
____
40
____
40
____
40
ns
25
____
30
____
30
____
35
____
40
____
ns
5
____
5
____
5
____
10
____
ns
0
____
0
____
0
____
0
____
tWR
Write Re co ve ry Time
tWHZ(3)
Write to Outp ut in Hig h-Z
____
tDW
Data to Write Time Ove rlap
20
____
5
____
0
____
(4)
tDH
Data Ho ld fro m Write Time
0
____
tOW(3,4)
Outp ut Active fro m End -o f-Write
0
____
ns
3089 tb l 15
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operation conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
8
Jul.17.20
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,5,7)
tWC
ADDRESS
tAW
CS
tAS
tWP (7)
tWR
(3)
tCHZ
(6)
WE
(6)
tWHZ
DATAOUT
PREVIOUS DATA VALID
tOW
(4)
tDW
DATAIN
(6)
DATA (4)
VALID
tDH
DATA VALID
3089 drw 09
,
Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,3,5,7)
tWC
ADDRESS
tAW
CS
tWR (3)
tAS
tCW
WE
tDW
DATAIN
tDH
DATA VALID
3089 drw 10
NOTES:
1. WE or CS must be HIGH during all address transitions.
2. A write occurs during the overlap of a LOW CS and a LOW WE.
3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle.
4. During this period, the I/O pins are in the output state and the input signals must not be applied.
5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state.
6. Transition is measured ±500mV from steady state.
7. OE is continuously HIGH. If OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ + tDW) to allow the I/O drivers
to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the write pulse
is the specified tWP. For a CS controlled write cycle, OE may be LOW with no degradation to tCW.
6.42
9
Jul.17.20
,
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Ordering Information — Military
6116
XX
XXX
X
X
Device Type
Power
Speed
Package
Process/
Temperature
Range
X
Blank
Tube
B
Military (-55°C to +125°C)
Compliant to MIL-STD-883, Class B
TD
D
300 mil CERDIP (SD24)
600 mil CERDIP (CD24)
20*
25
35
45
55
70
90
120
150
Speed in nanoseconds
Standard Power
Low Power
SA
LA
3089 drw 11
Ordering Information — Commercial & Industrial
6116
XX
XXX
X
Device Type
Power
Speed
Package
X
X
X
Process/
Temperature
Range
Blank
8
Tube
Tape and Reel
Blank
I(1)
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
G
Green
TP
SO
300 mil Plastic DIP (PTG24)
300 mil Small Outline IC, Gull-Wing Bend (PSG24)
15*
20
25
Speed in nanoseconds
SA
LA
Standard Power
Low Power
*Available in commercial temperature range and standard power only.
NOTE:
1. Contact your local sales office for industrial temp range for other speeds, packages and powers.
10
Jul.17.20
3089 drw 12
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Orderable Part Information
Speed
(ns)
20
25
35
45
55
70
90
120
150
Pkg.
Code
Pkg.
Type
Temp.
Grade
Speed
(ns)
6116LA20SOG
PSG24
SOIC
C
15
6116LA20SOG8
PSG24
SOIC
6116LA20SOGI
PSG24
6116LA20SOGI8
Pkg.
Code
Pkg.
Type
Temp.
Grade
6116SA15SOG
PSG24
SOIC
C
C
6116SA15SOG8
PSG24
SOIC
C
SOIC
I
6116SA15TPG
PTG24
PDIP
C
PSG24
SOIC
I
6116SA20DB
CD24
CDIP
M
6116LA20TDB
SD24
CDIP
M
6116SA20SOG
PSG24
SOIC
C
6116LA20TPG
PTG24
PDIP
C
6116SA20SOG8
PSG24
SOIC
C
6116LA20TPGI
PTG24
PDIP
I
6116SA20TDB
SD24
CDIP
M
6116LA25DB
CD24
CDIP
M
6116SA20TPG
PTG24
PDIP
C
6116LA25SOG
PSG24
SOIC
C
6116SA20TPGI
PTG24
PDIP
I
6116LA25SOG8
PSG24
SOIC
C
6116SA25SOG
PSG24
SOIC
C
6116LA25SOGI
PSG24
SOIC
I
6116SA25SOG8
PSG24
SOIC
C
6116LA25SOGI8
PSG24
SOIC
I
6116SA25SOGI
PSG24
SOIC
I
6116LA25TDB
SD24
CDIP
M
6116SA25SOGI8
PSG24
SOIC
I
6116LA25TPG
PTG24
PDIP
C
6116SA25TDB
SD24
CDIP
M
6116LA35DB
CD24
CDIP
M
6116SA25TPG
PTG24
PDIP
C
6116LA35TDB
SD24
CDIP
M
6116SA25TPGI
PTG24
PDIP
I
6116LA45DB
CD24
CDIP
M
35
6116SA35TDB
SD24
CDIP
M
45
6116SA45DB
CD24
CDIP
M
6116SA45TDB
SD24
CDIP
M
6116SA55DB
CD24
CDIP
M
6116SA55TDB
SD24
CDIP
M
6116SA70DB
CD24
CDIP
M
6116SA70TDB
SD24
CDIP
M
6116SA90DB
CD24
CDIP
M
6116SA90TDB
SD24
CDIP
M
6116SA120DB
CD24
CDIP
M
6116SA120TDB
SD24
CDIP
M
6116SA150DB
CD24
CDIP
M
6116SA150TDB
SD24
CDIP
M
Orderable Part ID
6116LA45TDB
SD24
CDIP
M
6116LA55DB
CD24
CDIP
M
6116LA55TDB
SD24
CDIP
M
6116LA70DB
CD24
CDIP
M
6116LA70TDB
SD24
CDIP
M
6116LA90DB
CD24
CDIP
M
6116LA90TDB
SD24
CDIP
M
6116LA120DB
CD24
CDIP
M
6116LA120TDB
SD24
CDIP
M
6116LA150DB
CD24
CDIP
M
6116LA150TDB
SD24
CDIP
M
20
25
55
70
90
120
150
6.42
11
Jul.17.20
Orderable Part ID
6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit)
Military, Commercial, and Industrial Temperature Ranges
Datasheet Document History
01/07/00
Pg. 1, 3, 4, 10
Pg. 9, 10
Pg. 11
08/09/00
02/01/01
12/30/03
03/31/05
11/15/06
Pg. 3,10
Pg. 10
Pg. 3
Pg.4
04/26/11
Pg.1,2,3,4,6,10
05/01/13
Pg. 1
Pg. 3
07/17/20
Pg. 10
Pg. 1 - 13
Pg. 2 & 10
Pg. 10
Pg. 11
Updated to new format
Added Industrial Temperature range offerings
Separated ordering information into military, commercial, and industrial temperature range offerings
Added Datasheet Document History
Not recommended for new designs
Removed "Not recommended for new designs"
Corrected Industrial temp from -45C to -40C.
Added "Restricted hazardous substance device" to ordering information.
Changed power limits for commercial and industrial on speed grades 25ns and 35ns.
Changed power limits for commercial and industrial on speed grade 45ns. Refer to
PCN SR-0602-02.
Updated "Restricted hazardous substance device" to "Green". Obsoleted 24-pin SOJ, 24-pin 600 mil
and 35ns, 45ns for Industrial & Commercial.
Description paragraph 4, package information. Changed text to read "The IDT6116SA/LA is packaged
in 24-pin 300mil plastic DIP, 24-pin 600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing
high board-level packing densities". Removed IDT in reference to fabrication.
Updated DC Elec Chars (VCC = 5.0V ± 10%) table by adding industrial to the Test Conditions.
Updated DC Elec Chars (VCC = 5.0V ± 10%, VLC = 0.2V, VHC + VCC - 0.2V) table by removing the LA power
for the 15ns speed.
Removed footnote "*Available in 300mil packaging only" from the Military ordering information.
Rebranded as Renesas datasheet
Updated package codes.
Updated Ordering Information.
Added Orderable Part Information tables.
12
Jul.17.20
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