70T3509MS133BPGI

HIGH-SPEED 2.5V 1024K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location High-speed data access – Commercial: 4.2ns (133MHz)(max.) – Industrial: 4.2ns (133MHz)(max.) Selectable Pipelined or Flow-Through output mode Counter enable and repeat features Interrupt Flags Full synchronous operation on both ports – 7.5ns cycle time, 133MHz operation (9.5Gbps bandwidth) – 1.5ns setup to clock and 0.5ns hold on all control, data, and address inputs @ 133MHz – Fast 4.2ns clock to data out 70T3509M – Data input, address, byte enable and control registers – Self-timed write allows fast cycle time Separate byte controls for multiplexed bus and bus matching compatibility Dual Cycle Deselect (DCD) for Pipelined Output Mode 2.5V (±100mV) power supply for core LVTTL compatible, selectable 3.3V (±150mV) or 2.5V (±100mV) power supply for I/Os and control signals on each port Includes JTAG functionality Available in a 256-pin Ball Grid Array (BGA) Common BGA footprint provides design flexibility over seven density generations (512K to 36M-bit) Green parts available, see ordering information ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Functional Block Diagram FT/PIPEL BE3L BE3R BE2L BE2R BE1L BE1R BE0L BE0R 1/0 0a 1a 0b 1b 0c 1c 0d 1d 1d 0d 1c 0c 1b 0b 1a 0a a b c d d c b a FT/PIPER 1/0 R/WL R/WR (2) (2) CE0L CE1L 1 1 0 0 B W 0 L 1/0 OEL B B B B B W WW W W 1 2 3 3 2 L L L R R Dout0-8_L Dout9-17_L Dout18-26_L Dout27-35_L B B WW 1 0 R R 1/0 OER Dout0-8_R Dout9-17_R Dout18-26_R Dout27-35_R 1d 0d 1c 0c 1b 0b 1a 0a FT/PIPEL CE0R CE1R , 0a 1a 0b 1b 0c 1c 0d 1d FT/PIPER 0/1 0/1 abcd dcba 1024K x 36 MEMORY ARRAY I/O0L - I/O35L Din_L I/O0R - I/O35R Din_R CLKR CLKL , A19R A19L Counter/ Address Reg. A0L REPEATL ADSL CNTENL Counter/ Address Reg. ADDR_R ADDR_L A 0R REPEATR ADSR CNTENR TDI CE 0 L CE1L CE0 R CE1R INTERRUPT LOGIC R/W L JTAG TDO TCK TMS TRST R/ WR INTL INTR ZZL (1) ZZ CONTROL LOGIC ZZR (1) NOTES: 1. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and OPTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode. 2. See Truth Table I for Functionality. 5682 drw 01 OCTOBER 2019 1 DSC 5682/12 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Description: The IDT70T3509M is a high-speed 1024K x 36 bit synchronous Dual-Port RAM. The memory array utilizes Dual-Port memory cells to allow simultaneous access of any address from both ports. Registers on control, data, and address inputs provide minimal setup and hold times. The timing latitude provided by this approach allows systems to be designed with very short cycle times. With an input data register, the IDT70T3509M has been optimized for applications having unidirectional Industrial and Commercial Temperature Ranges or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70T3509M can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 2.5V. 6.42 2 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Pin Configuration (1,2,3,4) 70T3509M BP256(5,7) BPG256(5,7) 256-Pin BGA Top View(6) 08/03/04 A1 NC B1 I/O18L C1 A2 TDI B2 NC C2 I/O18R I/O19L D1 D2 A3 A19L B3 TDO C3 V SS D3 A4 A 17L B4 A 18L C4 A16L D4 A5 A6 A 14L A 11L B5 B6 A15L C5 A13L D5 A12L C6 A10L D6 A7 A 8L B7 A 9L C7 A7L D7 A8 A9 BE2L CE1L B9 B8 BE3L C8 B10 B11 C10 C11 BE0L CLKL ADSL D9 D8 A11 A12 OEL CNTENL A5L CE0L R/WL REPEATL C9 BE1L A10 D10 D11 B12 A4L C12 A6L D12 A13 A2L B13 A1L C13 A3L D13 A14 A0L B14 VDD C14 A15 A16 NC NC B16 B15 I/O17L NC C16 C15 OPTL I/O17R I/O16L D14 D16 D15 I/O20R I/O19R I/O20L PIPE/FTL VDDQL VDDQL V DDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDD I/O15R I/O15L I/O16R E1 E2 E3 E4 I/O21R I/O21L I/O22L VDDQL F1 F2 F3 F4 E5 VDD F5 I/O23L I/O22R I/O23R VDDQL VDD G1 G2 G3 G4 I/O24R I/O24L I/O25L VDDQR H1 H2 H3 H4 G5 V SS H5 I/O26L I/O25R I/O26R VDDQR VSS J1 J2 J3 J4 I/O27L I/O28R I/O27R VDDQL K1 K2 K3 K4 I/O29R I/O29L I/O28L V DDQL L1 L2 L3 L4 J5 ZZ R K5 V SS L5 I/O30L I/O31R I/O30R VDDQR VDD M1 M2 M3 M4 I/O32R I/O32L I/O31L VDDQR N1 N2 N3 N4 M5 VDD N5 E6 VDD F6 NC G6 VSS H6 V SS J6 VSS K6 VSS L6 NC M6 V DD N6 E7 INT L F7 NC G7 VSS H7 VSS J7 E9 E8 VSS F9 F8 K7 VSS L7 NC M7 INTR N7 V SS VSS G8 G9 VSS H8 V SS H9 VSS J8 VSS V SS VSS J9 VSS K8 V SS K9 VSS L8 V SS L9 VSS M8 V SS M9 VSS N8 V SS N9 E10 VSS F10 VSS G10 VSS H10 V SS J10 VSS K10 VSS L10 V SS M10 VSS N10 E11 VDD F11 VSS G11 VSS H11 VSS J11 VSS K11 VSS L11 VSS M11 VDD N11 E12 F12 P2 P3 I/O35R I/O34L TMS R1 I/O35L T1 NC R2 NC T2 TCK R3 P4 A 16R R4 TRST A18R T3 A19R T4 A 17R P5 A13R R5 A15R T5 A14R P6 A10R R6 A 12R T6 A11R P7 A7R R7 A9R T7 A8R P8 P9 P10 P11 BE1R BE0R CLKR ADS R R8 R9 R10 R11 G12 VSS H12 VSS J12 T9 BE2R CE1R T10 T11 E16 E15 F13 F14 F15 F16 G13 G14 G16 G15 VDDQL I/O10L I/O11L I/O11R H13 H14 VDDQL I/O9R J13 J14 H16 H15 IO9L I/O10R J16 J15 ZZL V DDQR I/O8R I/O7R K12 VSS L12 VDD M12 VDD N12 P12 A6R R12 BE3R CE0R R/W R REPEATR A4R T8 E14 VDD V DDQR I/O12R I/O13R I/O12L I/O33L I/O34R I/O33R P IP E / FTR V DDQR VDDQR VDDQL VDDQL V DDQR V DDQR VDDQL VDDQL P1 E13 VDD V DDQR I/O13L I/O14L I/O14R T12 OER CNTENR A 5R K13 K14 K15 I/O8L K16 V DDQR I/O6R I/O6L I/O7L L13 L14 V DDQL I/O5L M13 M14 L15 L16 I/O4R I/O5R M16 M15 V DDQL I/O3R I/O3L I/O4L N13 VDD P13 A3R R13 A1R T13 A2R N14 I/O2L P14 N16 N15 I/O1R I/O2R P15 P16 I/O0L I/O0R R14 OPTR T14 A 0R I/O1L R16 R15 NC T15 NC , T16 NC NC 5682 drw 02d NOTES: , 1. All VDD pins must be connected to 2.5V power supply. 2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VDD (2.5V), and 2.5V if OPT pin for that port is set to VSS (0V). 3. All VSS pins must be connected to ground supply. 4. Package body is approximately 17mm x 17mm x 1.76mm, with 1.0mm ball-pitch. 5. This package code is used to reference the package diagram. 6. This text does not indicate orientation of the actual part-marking. 7. BP-256 package thickness is 1.76mm nominal. This is thicker than the BC-256 package (1.40mm nominal) used for the lower density IDT dual-port products. 6.42 3 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Pin Names Left Port Right Port Names CE0L, CE1L CE0R, CE1R Chip Enables (Input)(5) R/WL R/WR Read/Write Enable (Input) OEL OER Output Enable (Input) A0L - A19L A0R - A19R Address (Input) I/O0L - I/O35L I/O0R - I/O35R Data Input/Output CLKL CLKR Clock (Input) PL/FTL PL/FTR Pipeline/Flow-Through (Input) ADSL ADSR Address Strobe Enable (Input) CNTENL CNTENR Counter Enable (Input) REPEATL REPEATR Counter Repeat(3) (Input) BE0L - BE3L BE0R - BE3R Byte Enables (9-bit bytes) (Input)(5) VDDQL VDDQR Power (I/O Bus) (3.3V or 2.5V)(1) (Input) OPTL OPTR Option for selecting VDDQX(1,2) (Input) ZZL ZZR INTL Sleep Mode pin(4) (Input) VDD Power (2.5V)(1) (Input) VSS Ground (0V) (Input) TDI Test Data Input TDO Test Data Output TCK Test Logic Clock (10MHz) (Input) TMS Test Mode Select (Input) TRST Reset (Initialize TAP Controller) (Input) INTR Interrupt Flag (Output) 5682 tbl 01 NOTES: 1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to applying inputs on the I/Os and controls for that port. 2. OPTX selects the operating voltage levels for the I/Os and controls on that port. If OPTX is set to VDD (2.5V), then that port's I/Os and controls will operate at 3.3V levels and VDDQX must be supplied at 3.3V. If OPTX is set to VSS (0V), then that port's I/Os and address controls will operate at 2.5V levels and VDDQX must be supplied at 2.5V. The OPT pins are independent of one another—both ports can operate at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V with the other at 2.5V. 3. When REPEATX is asserted, the counter will reset to the last valid address loaded via ADSX. 4. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. All static inputs, i.e., PL/FTx and OPTx and the sleep mode pins themselves (ZZx) are not affected during sleep mode. It is recommended that boundary scan not be operated during sleep mode. 5. Chip Enables and Byte Enables are double buffered when PL/FT = VIH, i.e., the signals take two cycles to deselect. 6.42 4 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Truth Table I—Read/Write and Enable Control (1,2,3,4) OE CLK CE0 CE 1 BE3 BE2 BE1 BE0 R/W ZZ Byte 3 I/O27-35 Byte 2 I/O18-26 Byte 1 I/O9-17 Byte 0 I/O0-8 X ↑ H L X X X X X L High-Z High-Z High-Z High-Z Deselected–Power Down X ↑ L L X X X X X X Active Active Active Active Not Allowed X ↑ H H X X X X X X Active Active Active Active Not Allowed X ↑ L H H H H H X L High-Z High-Z High-Z High-Z All Bytes Deselected X ↑ L H H H H L L L High-Z High-Z High-Z DIN Write to Byte 0 Only X ↑ L H H H L H L L High-Z High-Z DIN High-Z Write to Byte 1 Only MODE X ↑ L H H L H H L L High-Z DIN High-Z High-Z Write to Byte 2 Only X ↑ L H L H H H L L DIN High-Z High-Z High-Z Write to Byte 3 Only X ↑ L H H H L L L L High-Z High-Z DIN DIN Write to Lower 2 Bytes Only X ↑ L H L L H H L L DIN DIN High-Z High-Z Write to Upper 2 bytes Only X ↑ L H L L L L L L DIN DIN DIN DIN Write to All Bytes L ↑ L H H H H L H L High-Z High-Z High-Z DOUT Read Byte 0 Only L ↑ L H H H L H H L High-Z High-Z DOUT High-Z Read Byte 1 Only L ↑ L H H L H H H L High-Z DOUT High-Z High-Z Read Byte 2 Only L ↑ L H L H H H H L DOUT High-Z High-Z High-Z Read Byte 3 Only L ↑ L H H H L L H L High-Z High-Z DOUT DOUT Read Lower 2 Bytes Only L ↑ L H L L H H H L DOUT DOUT High-Z High-Z Read Upper 2 Bytes Only L ↑ L H L L L L H L DOUT DOUT DOUT DOUT H ↑ X X X X X X X L High-Z High-Z High-Z High-Z Outputs Disabled X X X X X X X X X H High-Z High-Z High-Z High-Z Sleep Mode Read All Bytes NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. ADS, CNTEN, REPEAT = X. 3. OE and ZZ are asynchronous input signals. 4. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here. Truth Table II—Address Counter Control Address Previous Internal Address Internal Address Used CLK An X An ↑ ADS L(4) CNTEN REPEAT(6) I/O(3) X H DI/O (n) (1,2) MODE External Address Used X An An + 1 ↑ H L H DI/O(n+1) Counter Enabled—Internal Address generation (7) X An + 1 An + 1 ↑ H H H DI/O(n+1) External Address Blocked—Counter disabled (An + 1 reused) X (4) X X An ↑ X (5) 5682 tbl 02 L DI/O(n) Counter Set to last valid ADS load 5682 tbl 03 NOTES: 1. "H" = VIH, "L" = VIL, "X" = Don't Care. 2. Read and write operations are controlled by the appropriate setting of R/W, CE0, CE1, BEn and OE. 3. Outputs configured in flow-through output mode: if outputs are in pipelined mode the data out will be delayed by one cycle. 4. ADS and REPEAT are independent of all other memory control signals including CE0, CE1 and BEn 5. The address counter advances if CNTEN = VIL on the rising edge of CLK, regardless of all other memory control signals including CE0, CE1, BEn. 6. When REPEAT is asserted, the counter will reset to the last valid address loaded via ADS. This value is not set at power-up: a known location should be loaded via ADS during initialization if desired. Any subsequent ADS access during operations will update the REPEAT address location. 7. Address A19 must be managed as part of a full depth counter implementation using the IDT70T3509M. For physical addresses 00000H through 7FFFFH the value of a A19 is 0, while for physical addresses 80000H through FFFFFH the value of A19 is 1. The user needs to keep track of the device counter and make sure that A19 is actively driven from 0-to-1 or 1-to-0 and held as needed at the appropriate address boundaries for full depth counter operation and that A19 is in the appropriate state when using the REPEAT function. 6.42 5 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Recommended Operating Temperature and Supply Voltage Grade Commercial Industrial (1) Ambient Temperature GND VDD 0OC to +70OC 0V 2.5V + 100mV -40OC to +85OC 0V 2.5V + 100mV 5682 tbl 04 NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. Recommended DC Operating Conditions with VDDQ at 2.5V Symbol Parameter Min. Typ. Max. Unit VDD Core Supply Voltage 2.4 2.5 2.6 V VDDQ I/O Supply Voltage (3) 2.4 2.5 2.6 V VSS Ground 0 0 0 V VIH Input High Volltage (Address, Control & Data I/O Inputs)(3) 1.7 ____ VDDQ + 100mV(2) V VIH Input High Voltage JTAG 1.7 ____ VDD + 100mV(2) V VIH Input High Voltage ZZ, OPT, PIPE/FT VDD - 0.2V ____ VDD + 100mV(2) V (1) _ VIL Input Low Voltage -0.3 ____ 0.7 V VIL Input Low Voltage ZZ, OPT, PIPE/FT -0.3(1) ____ 0.2 V 5682 tbl 05a NOTES: 1. VIL (min.) = -1.0V for pulse width less than tCYC/2 or 5ns, whichever is less. 2. VIH (max.) = VDDQ + 1.0V for pulse width less than tCYC/2 or 5ns, whichever is less. 3. To select operation at 2.5V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to Vss(0V), and VDDQX for that port must be supplied as indicated above. Recommended DC Operating Conditions with VDDQ at 3.3V Symbol VDD Parameter Core Supply Voltage (3) Min. Typ. Max. Unit 2.4 2.5 2.6 V 3.15 3.3 3.45 V 0 0 0 V 2.0 ____ VDDQ + 150mV(2) V 1.7 ____ VDD + 100mV (2) V VDD - 0.2V ____ VDD + 100mV (2) V VDDQ I/O Supply Voltage VSS Ground VIH Input High Voltage (Address, Control &Data I/O Inputs)(3) VIH Input High Voltage JTAG VIH Input High Voltage ZZ, OPT, PIPE/FT VIL Input Low Voltage -0.3(1) ____ 0.8 V VIL Input Low Voltage ZZ, OPT, PIPE/FT -0.3(1) ____ 0.2 V _ 5682 tbl 05b NOTES: 1. VIL (min.) = -1.0V for pulse width less than tCYC/2, or 5ns, whichever is less. 2. VIH (max.) = VDDQ + 1.0V for pulse width less than tCYC/2 or 5ns, whichever is less. 3. To select operation at 3.3V levels on the I/Os and controls of a given port, the OPT pin for that port must be set to VDD (2.5V), and VDDQX for that port must be supplied as indicated above. 6.42 6 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Absolute Maximum Ratings (1) Symbol Rating Com'l & Ind Unit VTERM (V DD) VDD Terminal Voltage with Respect to GND VTERM(2) (V DDQ) VDDQ Terminal Voltage with Respect to GND -0.3 to VDDQ + 0.3 V VTERM(2) (INPUTS and I/O's) Input and I/O Terminal Voltage with Respect to GND -0.3 to VDDQ + 0.3 V TBIAS(3) Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C TJN Junction Temperature +150 o C -0.5 to 3.6 IOUT(For VDDQ = 3.3V) DC Output Current 50 IOUT(For VDDQ = 2.5V) DC Output Current 40 V mA mA 5682 tbl 06 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. This is a steady-state DC parameter that applies after the power supply has reached its nominal operating value. Power sequencing is not necessary; however, the voltage on any Input or I/O pin cannot exceed VDDQ during power supply ramp up. 3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected. Capacitance(1) (TA = +25°C, F = 1.0MHZ) BGA ONLY Symbol CIN Parameter Input Capacitance (2) COUT Output Capacitance Conditions Max. Unit VIN = 0V 35 pF VOUT = 0V 35 pF 5682 tbl 07 NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. COUT also references CI/O. DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 2.5V ± 100mV) 70T3509MS Symbol |ILI| |ILI| |ILO| VOL (3.3V) Parameter Test Conditions Input Leakage Current(1) (1,2) JTAG & ZZ Input Leakage Current (1,3) Output Leakage Current Output Low Voltage (1) (1) Min. Max. Unit VDDQ = Max., VIN = 0V to VDDQ ___ 20 µA VDD = Max., VIN = 0V to VDD ___ 60 µA CE0 = VIH and CE 1 = VIL, VOUT = 0V to VDDQ ___ 20 µA IOL = +4mA, VDDQ = Min. ___ 0.4 V V V VOH (3.3V) Output High Voltage IOH = -4mA, VDDQ = Min. 2.4 ___ VOL (2.5V) Output Low Voltage (1) IOL = +2mA, VDDQ = Min. ___ 0.4 VOH (2.5V) Output High Voltage (1) IOH = -2mA, VDDQ = Min. 2.0 ___ V 5682 tbl 08 NOTES: 1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.5 for details. 2. Applicable only for TMS, TDI and TRST inputs. 3. Outputs tested in tri-state mode. 6.42 7 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (3) (VDD = 2.5V ± 100mV) 70T3509MS133 Com'l & Ind Symbol IDD ISB1(6) ISB2(6) ISB3 ISB4(6) Izz Parameter Test Condition Version Typ.(4) Max. Dynamic Operating Current (Both Ports Active) CEL and CER= VIL, Outputs Disabled, f = fMAX(1) COM'L S 800 1120 IND S 800 1370 Standby Current (Both Ports - TTL Level Inputs) CEL = CER = VIH f = fMAX(1) COM'L S 560 760 IND S 560 940 Standby Current (One Port - TTL Level Inputs) CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(1) COM'L S 680 880 IND S 680 1090 Full Standby Current (Both Ports - CMOS Level Inputs) Both Ports CE0L = CE0R > VDDQ - 0.2V and CE1L = CE1R < 0.2V, VIN > VDDQ - 0.2V or VIN < 0.2V, f = 0(2) COM'L S 20 60 IND S 20 80 Full Standby Current (One Port - CMOS Level Inputs) CE"A" < 0.2V and CE"B" > VDDQ - 0.2V(5) VIN > VDDQ - 0.2V or VIN < 0.2V Active Port, Outputs Disabled, f = fMAX(1) COM'L S 680 880 IND S 680 1090 Sleep Mode Current (Both Ports - TTL Level Inputs) ZZL = ZZR = VIH f=fMAX(1) COM'L S 20 60 IND S 20 80 Unit mA mA mA mA mA mA 5682 tbl 09 NOTES: 1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency clock cycle of 1/tCYC, using "AC TEST CONDITIONS". 2. f = 0 means no address, clock, or control lines change. Applies only to input at CMOS level standby. 3. Port "A" may be either left or right port. Port "B" is the opposite from port "A". 4. VDD = 2.5V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 30mA (Typ). 5. CEX = VIL means CE0X = VIL and CE1X = VIH (enabled) CEX = VIH means CE0X = VIH and CE1X = VIL (disabled) CEX < 0.2V means CE0X < 0.2V and CE1X > VDDQ - 0.2V (enabled - CMOS levels) CEX > VDDQ - 0.2V means CE0X > VDDQ - 0.2V and CE1X < 0.2V (disabled - CMOS levels) "X" represents "L" for left port or "R" for right port. 6. ISB1, ISB2 and ISB4 will all reach full standby levels (ISB3) on the appropriate port(s) if ZZL and/or ZZR = VIH. 6.42 8 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges AC Test Conditions (VDDQ - 3.3V/2.5V) Input Pulse Levels (Address & Controls) GND to 3.0V/GND to 2.4V Input Pulse Levels (I/Os) GND to 3.0V/GND to 2.4V Input Rise/Fall Times 2ns Input Timing Reference Levels 1.5V/1.25V Output Reference Levels 1.5V/1.25V Output Load Figure 1 5682 tbl 10 50Ω 50Ω DATAOUT 1.5V/1.25 10pF (Tester) 5682 drw 03 Figure 1. AC Output Test load. Δ tCD (Typical, ns) Δ Capacitance (pF) from AC Test Load 6.42 9 5682 drw 04 , 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Range (Read and Write Cycle Timing) (2,3) (VDD = 2.5V ± 100mV, TA = 0°C to +70°C) 70T3509MS133 Com'l & Ind Symbol Parameter (1) Min. Max. Unit ns tCYC1 Clock Cycle Time (Flow-Through) 25 ____ tCYC2 Clock Cycle Time (Pipelined)(1) 7.5 ____ ns tCH1 Clock High Time (Flow-Through)(1) 10 ____ ns tCL1 Clock Low Time (Flow-Through)(1) 10 ____ ns tCH2 Clock High Time (Pipelined)(2) 3 ____ ns ns (1) tCL2 Clock Low Time (Pipelined) 3 ____ tSA Address Setup Time 1.8 ____ ns tHA Address Hold Time 0.5 ____ ns tSC Chip Enable Setup Time 1.8 ____ ns tHC Chip Enable Hold Time 0.5 ____ ns tSB Byte Enable Setup Time 1.8 ____ ns tHB Byte Enable Hold Time 0.5 ____ ns tSW R/W Setup Time 1.8 ____ ns tHW R/W Hold Time 0.5 ____ ns tSD Input Data Setup Time 1.8 ____ ns tHD Input Data Hold Time 0.5 ____ ns tSAD ADS Setup Time 1.8 ____ ns tHAD ADS Hold Time 0.5 ____ ns CNTEN Setup Time 1.8 ____ ns tHCN CNTEN Hold Time 0.5 ____ ns tSRPT REPEAT Setup Time 1.8 ____ ns tHRPT REPEAT Hold Time 0.5 ____ ns tOE Output Enable to Data Valid ____ 4.6 ns tOLZ(4) Output Enable to Output Low-Z 1 ____ ns tOHZ(4) Output Enable to Output High-Z 1 4.2 ns tCD1 Clock to Data Valid (Flow-Through)(1) ____ 15 ns tCD2 Clock to Data Valid (Pipelined)(1) ____ 4.2 ns Data Output Hold After Clock High 1 ____ ns tCKHZ Clock High to Output High-Z 1 4.2 ns tCKLZ(4) Clock High to Output Low-Z 1 ____ ns tINS Interrupt Flag Set Time ____ 7 ns tINR Interrupt Flag Reset Time ____ 7 ns tCOLS Collision Flag Set Time ____ 4.2 ns tCOLR Collision Flag Reset Time ____ 4.2 ns tZZSC Sleep Mode Set Cycles 2 ____ cycles tZZRC Sleep Mode Recovery Cycles 3 ____ cycles 6 ____ tSCN tDC (4) Port-to-Port Delay tCO Clock-to-Clock Offset ns 5682 tbl 11 NOTES: 1. The Pipelined output parameters (tCYC2, tCD2) apply to either or both left and right ports when FT/PIPEX = VDD (2.5V). Flow-through parameters (tCYC1, tCD1) apply when FT/PIPE = Vss (0V) for that port. 2. All input signals are synchronous with respect to the clock except for the asynchronous Output Enable (OE), FT/PIPE and OPT. FT/PIPE and OPT should be treated as DC signals, i.e. steady state during operation. 3. These values are valid for either level of VDDQ (3.3V/2.5V). See page 6 for details on selecting the desired operating voltage levels for each port. 4. Guaranteed by design (not production tested). 6.42 10 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle for Pipelined Operation (FT/PIPE'X' = VIH)(1,2) tCYC2 tCH2 tCL2 CLK CE0 tSC tSC tHC tHC (3) CE1 tSB tSB tHB BEn tHB (5) R/W (4) ADDRESS tSW tHW tSA tHA An An + 1 (1 Latency) An + 2 An + 3 tDC tCD2 DATAOUT Qn tCKLZ OE Qn + 1 Qn + 2 (5) (1) tOHZ tOLZ (1) , tOE 5682 drw 05 Timing Waveform of Read Cycle for Flow-Through Output (FT/PIPE"X" = VIL)(1,2,6) tCYC1 tCH1 tCL1 CLK CE0 tSC tSC tHC (3) CE1 tSB tHB BEn tSB R/W tHB tSW tHW tSA ADDRESS tHC (4) tHA An An + 1 tCD1 An + 2 tCKHZ Qn DATAOUT Qn + 2 Qn + 1 tCKLZ OE An + 3 tDC tOHZ tOLZ (5) tDC (1) tOE 5682 drw 06 NOTES: 1. OE is asynchronously controlled; all other inputs depicted in the above waveforms are synchronous to the rising clock edge. 2. ADS = VIL, CNTEN and REPEAT = VIH. 3. The output is disabled (High-Impedance state) by CE0 = VIH, CE1 = VIL, BEn = VIH following the next rising edge of the clock. Refer to Truth Table 1. 4. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 5. If BEn was HIGH, then the appropriate Byte of DATAOUT for Qn + 2 would be disabled (High-Impedance state). 6. "x" denotes Left or Right port. The diagram is with respect to that port. 6.42 11 , 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Left Port Write to Pipelined Right Port Read(1,2,4) CLK"A" tSW tHW tSA tHA R/W"A " ADDRESS"A" tSD DATAIN"A" NO MATCH MATCH tHD VALID tCO(3) CLK"B" tCD2 R/W"B" ADDRESS"B" tSW tHW tSA tHA NO MATCH MATCH DATAOUT"B" VALID , tDC 5682 drw 09 NOTES: 1. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 2. OE = VIL for Port "B", which is being read from. OE = VIH for Port "A", which is being written to. 3. If tCO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (ie, time from write to valid read on opposite port will be tCO + 2 tCYC2 + tCD2). If tCO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (ie, time from write to valid read on opposite port will be tCO + tCYC2 + tCD2). 4. All timing is the same for Left and Right ports. Port "A" may be either Left or Right port. Port "B" is the opposite of Port "A" Timing Waveform with Port-to-Port Flow-Through Read(1,2,4) CLK "A" tSW tHW R/W "A" tSA ADDRESS "A" NO MATCH MATCH tSD DATAIN "A" tHA tHD VALID tCO (3) CLK "B" tCD1 R/W "B" ADDRESS "B" tSW tHW tSA tHA NO MATCH MATCH tCD1 DATAOUT "B" VALID VALID tDC tDC , 5682 drw 10 NOTES: 1. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 2. OE = VIL for the Right Port, which is being read from. OE = VIH for the Left Port, which is being written to. 3. If tCO < minimum specified, then data from Port "B" read is not valid until following Port "B" clock cycle (i.e., time from write to valid read on opposite port will be tCO + tCYC + tCD1). If tCO > minimum, then data from Port "B" read is available on first Port "B" clock cycle (i.e., time from write to valid read on opposite port will be tCO + tCD1). 4. All timing is the same for both left and right ports. Port "A" may be either left or right port. Port "B" is the opposite of Port "A". 6.42 12 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read-to-Write-to-Read (OE = VIL)(2) tCYC2 tCH2 tCL2 CLK CE0 tSC tHC CE1 tSB tHB BEn tSW tHW R/W (3) ADDRESS tSW tHW An tSA tHA An +1 An + 2 An + 3 An + 2 An + 4 tSD tHD DATAIN Dn + 2 tCD2 (1) tCKHZ tCKLZ tCD2 Qn + 3 Qn DATAOUT (4) READ NOP WRITE READ 5682 drw 11 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. "NOP" is "No Operation". 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be rewritten to guarantee data integrity. , Timing Waveform of Pipelined Read-to-Write-to-Read ( OE Controlled)(2) tCH2 tCYC2 tCL2 CLK CE0 tSC tHC CE1 tSB tHB BEn tSW tHW R/W (3) ADDRESS tSW tHW An tSA tHA An +1 An + 2 tSD DATAIN Dn + 2 tCD2 (1) Qn DATAOUT An + 3 An + 4 An + 5 tHD Dn + 3 tCKLZ tCD2 Qn + 4 (4) tOHZ OE READ WRITE READ , NOTES: 5682 drw 12 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. This timing does not meet requirements for fastest speed grade. This waveform indicates how logically it could be done if timing so allows. 6.42 13 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Flow-Through Read-to-Write-to-Read (OE = VIL)(2) tCH1 tCYC1 tCL1 CLK CE0 tSC tHC CE1 tSB tHB BEn tSW tHW R/W tSW tHW (3) ADDRESS tSA An tHA An +1 An + 2 An + 4 An + 3 An + 2 tSD tHD DATAIN Dn + 2 tCD1 (1) tCD1 Qn DATAOUT tCD1 Qn + 1 tDC tCKLZ tCKHZ READ NOP (5) WRITE tCD1 Qn + 3 tDC READ , 5682 drw 13 Timing Waveform of Flow-Through Read-to-Write-to-Read (OE Controlled)(2) tCYC1 tCH1 tCL1 CLK CE0 tSC tHC CE1 tSB tHB BEn tSW tHW tSW tHW R/W (3) An tSA tHA ADDRESS An +1 DATAIN (1) DATAOUT An + 2 tSD tHD An + 3 Dn + 2 Dn + 3 tDC tCD1 An + 4 tOE tCD1 Qn tCKLZ tOHZ An + 5 tCD1 Qn + 4 tDC OE READ WRITE READ 5682 drw 14 NOTES: 1. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals. 2. CE0, BEn, and ADS = VIL; CE1, CNTEN, and REPEAT = VIH. 3. Addresses do not have to be accessed sequentially since ADS = VIL constantly loads the address on the rising edge of the CLK; numbers are for reference use only. 4. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be rewritten to guarantee data integrity. 6.42 14 , 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Pipelined Read with Address Counter Advance(1) tCH2 tCYC2 tCL2 CLK tSA tHA An A0 - A18 tSA A19(3) tSAD tHAD ADS tSAD tHAD CNTEN tSCN tHCN tCD2 DATAOUT Qx - 1(2) Qn + 2(2) Qn + 1 Qn Qx , Qn + 3 (3) tDC READ EXTERNAL ADDRESS READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 5682 drw 15a Timing Waveform of Flow-Through Read with Address Counter Advance(1) tCYC1 tCH1 tCL1 CLK tSA A0 - A18 tHA An tSA A19(3) tSAD tHAD ADS tSAD tHAD tSCN tHCN CNTEN tCD1 DATAOUT Qx(2) Qn tDC READ EXTERNAL ADDRESS Qn + 1 Qn + 2 Qn + 3(2) Qn + 4 , (3) READ WITH COUNTER COUNTER HOLD READ WITH COUNTER 5682 drw 16a NOTES: 1. CE0, OE, BEn = VIL; CE1, R/W, and REPEAT = VIH. 2. If there is no address change via ADS = VIL (loading a new address) or CNTEN = VIL (advancing the address), i.e. ADS = VIH and CNTEN = VIH, then the data remains constant for subsequent clocks. 3. Address A19 must be managed as part of a full depth counter implementation using the IDT70T3509M. For physical addresses 00000H through 7FFFFH the value of a A19 is 0, while for physical addresses 80000H through FFFFFH the value of A19 is 1. The user needs to keep track of the device counter and make sure that A19 is actively driven from 0-to-1 or 1-to-0 and held as needed at the appropriate address boundaries for full depth counter operation. As shown this transition reflects An = 7FFFFH or FFFFFH. 6.42 15 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform of Write with Address Counter Advance (Flow-through or Pipelined Inputs)(1) tCH2 tCYC2 tCL2 CLK tSA A0 - A18 tHA An tSA A19(7) INTERNAL(3) ADDRESS An(5) An + 2 An + 1 An + 4 An + 3 tSAD tHAD ADS tSCN tHCN CNTEN (5) tSD tHD Dn + 1 Dn DATAIN Dn + 1 Dn + 4 Dn + 3 Dn + 2 (7) WRITE EXTERNAL ADDRESS WRITE WRITE WITH COUNTER COUNTER HOLD WRITE WITH COUNTER 5682 drw 17a Timing Waveform of Counter Repeat(2,6) tCYC2 CLK tSA tHA A0 - A18 An tSA A19(7) INTERNAL(3) ADDRESS An+2 An+1 An An+2 An An+1 An+2 An+2 tSAD tHAD ADS tSW tHW R/W tSCN tHCN CNTEN REPEAT (4) tSRPT tHRPT , tSD tHD DATAIN D0 D3 D2 D1 tCD1 An DATAOUT An+1 (7) WRITE TO ADS ADDRESS An ADVANCE COUNTER WRITE TO An+1 ADVANCE COUNTER WRITE TO An+2 HOLD COUNTER WRITE TO An+2 REPEAT READ LAST ADS ADDRESS An An+2 An+2 , ADVANCE COUNTER READ An+1 ADVANCE COUNTER READ An+2 HOLD COUNTER READ An+2 NOTES: 5682 drw 18a 1. CE0, BEn, and R/W = VIL; CE1 and REPEAT = VIH. 2. CE0, BEn = VIL; CE1 = VIH. 3. The "Internal Address" is equal to the "External Address" when ADS = VIL and equals the counter output when ADS = VIH. 4. No dead cycle exists during REPEAT operation. A READ or WRITE cycle may be coincidental with the counter REPEAT cycle: Address loaded by last valid ADS load will be accessed. For more information on REPEAT function refer to Truth Table II. A19 must be in the appropriate state when using the REPEAT function to guarantee the correct address location is loaded. 5. CNTEN = VIL advances Internal Address from ‘An’ to ‘An +1’. The transition shown indicates the time required for the counter to advance. The ‘An +1’Address is written to during this cycle. 6. For Pipelined Mode user should add 1 cycle latency for outputs as per timing waveform of read cycle for pipelined operations. 7. Address A19 must be managed as part of a full depth counter implementation using the IDT70T3509M. For physical addresses 00000H through 7FFFFH the value of a A19 is 0, while for physical addresses 80000H through FFFFFH the value of A19 is 1. The user needs to keep track of the device counter and make sure that A19 is actively driven from 0-to-1 or 1-to-0 and held as needed at the appropriate address boundaries for full depth counter operation. As shown this transition reflects An = 7FFFFH or FFFFFH. 6.42 16 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Waveform of Interrupt Timing(2) CLKL tSW tHW tSA tHA R/WL ADDRESS L(3) FFFFF tSC tHC CEL(1) tINS INTR tINR CLKR tSC tHC CER(1) R/WR ADDRESS tSW tHW tSA tHA FFFFF R(3) 5682 drw 19 NOTES: 1. CE0 = VIL and CE1 = VIH. 2. All timing is the same for Left and Right ports. 3. Address is for internal register, not the external bus, i.e. address needs to be qualified by one of the Address counter control signals. Truth Table III - Interrupt Flag(1) Left Port CLKL R/WL (2) (2) Right Port (2) CEL A19L-A0L INTL CLKR R/WR CER(2) A19R-A0R INTR Function ↑ L L FFFFF X ↑ X X X L Set Right INTR Flag ↑ X X X X ↑ H L FFFFF H Reset Right INTR Flag ↑ X X X L ↑ L L FFFFE X Set Left INTL Flag ↑ H L FFFFE H ↑ X X X X Reset Left INTL Flag 5682 tbl 12 NOTES: 1. INTL and INTR must be initialized at power-up by Resetting the flags. 2. CE0 = VIL and CE1 = VIH, R/W and CE are synchronous with respect to the clock and need valid set-up and hold times. 3. Address is for internal register, not the external bus, i.e. address needs to be qualified by one of the Address counter control signals. 6.42 17 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Timing Waveform - Entering Sleep Mode (1,2) R/W (3) Timing Waveform - Exiting Sleep Mode (1,2) An An+1 (5) R/W OE (5) Dn DATAOUT Dn+1 (4) NOTES: 1. CE1 = V IH. 2. All timing is same for Left and Right ports. 3. CE0 has to be deactivated (CE0 = VIH) three cycles prior to asserting ZZ (ZZx = VIH) and held for two cycles after asserting ZZ (ZZx = VIH). 4. CE0 has to be deactivated (CE0 = VIH) one cycle prior to de-asserting ZZ (ZZx = VIL) and held for three cycles after de-asserting ZZ (ZZx = VIL). 5. The device must be in Read Mode (R/W High) when exiting sleep mode. Outputs are active but data is not valid until the following cycle. 6.42 18 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Functional Description The IDT70T3509M provides a true synchronous Dual-Port Static RAM interface. Registered inputs provide minimal set-up and hold times on address, data, and all critical control inputs. All internal registers are clocked on the rising edge of the clock signal, however, the self-timed internal write pulse width is independent of the cycle time. An asynchronous output enable is provided to ease asynchronous bus interfacing. Counter enable inputs are also provided to stall the operation of the address counters for fast interleaved memory applications. The combination of a HIGH on CE0 and a LOW on CE1 for one clock cycle will power down the internal circuitry to reduce static power consumption. Multiple chip enables allow easier banking of multiple IDT70T3509Ms for depth expansion configurations. Two cycles are required with CE0 LOW and CE1 HIGH to reactivate the outputs. Width Expansion The IDT70T3509M can be used in applications requiring expanded width. Through combining the control signals, the devices can be grouped as necessary to accommodate applications needing 72-bits or wider. 6.42 19 Industrial and Commercial Temperature Ranges Sleep Mode The IDT70T3509M is equipped with an optional sleep or low power mode on both ports. The sleep mode pin on both ports is asynchronous and active high. During normal operation, the ZZ pin is pulled low. When ZZ is pulled high, the port will enter sleep mode where it will meet lowest possible power conditions. The sleep mode timing diagram shows the modes of operation: Normal Operation, No Read/Write Allowed and Sleep Mode. For normal operation all inputs must meet setup and hold times prior to sleep and after recovering from sleep. Clocks must also meet cycle high and low times during these periods. Three cycles prior to asserting ZZ (ZZx = VIH) and three cycles after de-asserting ZZ (ZZx = VIL), the device must be disabled via the chip enable pins. If a write or read operation occurs during these periods, the memory array may be corrupted. Validity of data out from the RAM cannot be guaranteed immediately after ZZ is asserted (prior to being in sleep). When exiting sleep mode, the device must be in Read mode (R/Wx = VIH)when chip enable is asserted, and the chip enable must be valid for one full cycle before a read will result in the output of valid data. During sleep mode the RAM automatically deselects itself. The RAM disconnects its internal clock buffer. The external clock may continue to run without impacting the RAMs sleep current (IZZ). All outputs will remain in high-Z state while in sleep mode. All inputs are allowed to toggle. The RAM will not be selected and will not perform any reads or writes. 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges JTAG Functionality and Configuration The IDT70T3509M is composed of four independent memory arrays, and thus cannot be treated as a single JTAG device in the scan chain. The four arrays (A, B, C and D) each have identical characteristics and commands but must be treated as separate entities in JTAG operations. Please refer to Figure 2. JTAG signaling must be provided serially to each array and utilize the information provided in the Identification Register Definitions, Scan Register Sizes, and System Interface Parameter tables. Specifically, all serial commands must be issued to the IDT70T3509M in the following sequence: Array D, Array C, Array B, Array A. Please reference Application Note AN-411, "JTAG Testing of Multichip Modules" for specific instructions on performing JTAG testing on the IDT70T3509M. AN-411 is available at www.idt.com. IDT70T3509M TDOB Array B Array C TDIC TDIB TDOC TDID TDOA Array A Array D TDI TCK TMS TRST 5682 drw 24 Figure 2. JTAG Configuration for IDT70T3509M 6.42 20 TDO 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges JTAG Timing Specifications tJF tJCL tJCYC tJR tJCH TCK Device Inputs(1)/ TDI/TMS tJS Device Outputs(2)/ TDO tJDC tJH tJRSR tJCD TRST , Figure 5. Standard JTAG Timing tJRST NOTES: 1. Device inputs = All device inputs except TDI, TMS, and TRST. 2. Device outputs = All device outputs except TDO. JTAG AC Electrical Characteristics (1,2,3,4) 70T3509M Symbol Parameter Min. Max. Units tJCYC JTAG Clock Input Period 100 ____ ns tJCH JTAG Clock HIGH 40 ____ ns tJCL JTAG Clock Low 40 ____ ns tJR JTAG Clock Rise Time ____ (1) ns (1) 3 tJF JTAG Clock Fall Time ____ 3 ns tJRST JTAG Reset 50 ____ ns tJRSR JTAG Reset Recovery 50 ____ ns tJCD JTAG Data Output ____ 25 ns tJDC JTAG Data Output Hold 0 ____ ns tJS JTAG Setup 15 ____ ns tJH JTAG Hold 15 ____ ns 5682 tbl 15 NOTES: 1. Guaranteed by design. 2. 30pF loading on external output signals. 3. Refer to AC Electrical Test Conditions stated earlier in this document. 4. JTAG operations occur at one speed (10MHz). The base device may run at any speed specified in this datasheet. 6.42 21 5682 drw 25 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Identification Register Definitions Instruction Field Array D Value Array D Revision Number (31:28) 0x0 Instruction Field Array C Value Array C Revision Number (63:60) 0x0 Instruction Field Array B Revision Number (95:92) Value Array B 0x0 Value Instruction Field Array A Description Array A Revision Number (127:124) 0x0 Reserved for Version number IDT Device ID (27:12) 0x333 IDT Device ID (59:44) 0x333 IDT Device ID (91:76) 0x333 IDT Device ID (123:108) 0x333 Defines IDT Part number IDT JEDEC ID (11:1) 0x33 IDT JEDEC ID (43:33) 0x33 0x33 0x33 ID Register Indicator Bit (Bit 0) 1 ID Register Indicator Bit (Bit 32) 1 IDT JEDEC ID (75:65) ID Register Indicator Bit (Bit 64) 1 IDT JEDEC ID (107:97) ID Register Indicator Bit (Bit 96) 1 Allows unique identification of device vendor as IDT Indicates the presence of an ID Register 5682 tbl 16 Scan Register Sizes Bit Size Array A Bit Size Array B Bit Size Array C Bit Size Array D Bit Size 70T3509M Instruction (IR) 4 4 4 4 16 Bypass (BYR) 1 1 1 1 4 32 32 32 32 128 Note (3) Note (3) Note (3) Note (3) Note (3) Register Name Identification (IDR) Boundary Scan (BSR) 5682 tbl 17 System Interface Parameters Instruction Code Description Forces contents of the boundary scan cells onto the device outputs (1). Places the boundary scan register (BSR) between TDI and TDO. EXTEST 0000000000000000 BYPASS 1111111111111111 IDCODE 0010001000100010 Loads the ID register (IDR) with the vendor ID code and places the register between TDI and TDO. 0100010001000100 Places the bypass register (BYR) between TDI and TDO. Forces all device output drivers except INTx to a High-Z state. HIGHZ CLAMP 0011001100110011 SAMPLE/PRELOAD 0001000100010001 RESERVED PRIVATE Places the bypass register (BYR) between TDI and TDO. Uses BYR. Forces contents of the boundary scan cells onto the device outputs. Places the bypass register (BYR) between TDI and TDO. Places the boundary scan register (BSR) between TDI and TDO. SAMPLE allows data from device inputs (2) to be captured in the boundary scan cells and shifted serially through TDO. PRELOAD allows data to be input serially into the boundary scan cells via the TDI. 0101010101010101, 0111011101110111, Several combinations are reserved. Do not use codes other than those 1000100010001000, 1001100110011001, identified above. 1010101010101010, 1011101110111011, 1100110011001100 0110011001100110,1110111011101110, 1101110111011101 For internal use only. 5682 tbl 18 NOTES: 1. Device outputs = All device outputs except TDO. 2. Device inputs = All device inputs except TDI, TMS, and TRST. 3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local IDT sales representative. 6.42 22 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Ordering Information XXXXX A 999 A Device Type Power Speed Package A A A Process/ Temperature Range Blank 8 Tray Tape and Reel Blank I(1) Commercial (0°C to +70°C) Industrial (-40°C to +85°C) G(2) Green BP(3) 256-pin BGA (BP256, BPG256) 133 Commercial and Industrial S Standard Power 70T3509M 36Mbit (1024K x 36) 2.5V Synchronous Dual-Port RAM Speed in Megahertz 5682 drw 26 NOTES: 1. Contact your local sales office for Industrial temp range in other speeds, packages and powers. 2. Green parts available. For specific speeds, packages and powers contact your local sales office. 3. BP-256 package thickness is 1.76mm nominal. This is thicker than the BC-256 package (1.40mm nominal) used for the lower density IDT dual-port products. Orderable Part Information Speed (MHz) 133 Orderable Part ID 70T3509MS133BP Pkg. Code Pkg. Type Temp. Grade BP256 CABGA C 70T3509MS133BPG BPG256 CABGA C 70T3509MS133BPGI BPG256 CABGA I BP256 CABGA I 70T3509MS133BPI 6.42 23 70T3509M High-Speed 2.5V 1024K x 36 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges Datasheet Document History 11/09/04: 03/24/05: 06/14/05: 08/27/07: 07/28/08: 01/19/09: 07/15/14: 02/14/18: 07/09/19: 10/29/19: Initial Public Release of Preliminary Datasheet Page 1 Added I-temp offering to features Page 6 Added I-temp information to the Recommended Operating Temperature and Supply Voltage table Page 8 Added I-temp values to the DC Electrical Characteristics table Page 10 Added I-temp to the heading of the AC Electrical Characteristics table Page 23 Added I-temp to ordering information Page 1 Added green availability to features Page 1 - 23 Removed Preliminary status Page 1 Added feature to highlight footprint compatibility Page 3 & 23 Added a footnote to highlight package thickness of BP-256 vs. BC-256 Page 1 Functional Block Diagram changed to correct chip enable logic and added footnote 2 referencing Truth Table I Page 8 Corrected a typo in the DC Chars table Page 23 Removed "IDT" from orderable part number Page 23 Added Tape & Reel to Ordering Information Page 23 Ordering Information restored from 70T3719_99 to 70T3509M Product Discontinuation Notice - PDN# SP-17-02 Last time buy expires June 15, 2018 Page 3 & 23 Updated package code BP-256 to BP256 and BPG256 Page 23 Added Orderable Part Information table Page 23 Corrected "ns" to "MHz" in the header of the Orderable Part Information table CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 24 for Tech Support: 408-284-2794 DualPortHelp@idt.com IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. 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