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71421SA20PF8

71421SA20PF8

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    LQFP-64

  • 描述:

    IC SRAM 16KBIT PARALLEL 64TQFP

  • 详情介绍
  • 数据手册
  • 价格&库存
71421SA20PF8 数据手册
HIGH SPEED 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS Features ◆ ◆ ◆ ◆ High-speed access – Commercial: 20/35/55ns (max.) – Industrial: 25/55ns (max.) Low-power operation – IDT71321/IDT71421SA — Active: 325mW (typ.) — Standby: 5mW (typ.) – IDT71321/421LA — Active: 325mW (typ.) — Standby: 1mW (typ.) Two INT flags for port-to-port communications ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ 71321SA/LA 71421SA/LA MASTER IDT71321 easily expands data bus width to 16-ormore-bits using SLAVE IDT71421 On-chip port arbitration logic (IDT71321 only) BUSY output flag on IDT71321; BUSY input on IDT71421 Fully asynchronous operation from either port Battery backup operation – 2V data retention (LA only) TTL-compatible, single 5V ±10% power supply Available in 52-Pin PLCC, 52-Pin STQFP, 64-Pin TQFP, and 64-Pin STQFP Industrial temperature range (–40°C to +85°C) is available for selected speeds Green parts available, see ordering information Functional Block Diagram OEL OER CEL R/WL CER R/WR I/O0L- I/O7L I/O Control I/O0R-I/O7R I/O Control (1,2) (1,2) BUSYL A10L A0L BUSYR Address Decoder MEMORY ARRAY 11 CEL OEL R/WL Address Decoder A10R A0R 11 ARBITRATION and INTERRUPT LOGIC CER OER R/WR (2) (2) INTR INTL 2691 drw 01 NOTES: 1. IDT71321 (MASTER): BUSY is open drain output and requires pullup resistor of 270Ω. IDT71421 (SLAVE): BUSY is input. 2. Open drain output: requires pullup resistor of 270Ω. SEPTEMBER 2019 1 ©2019 Integrated Device Technology, Inc. DSC-2691/17 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges Description The IDT71321/IDT71421 are high-speed 2K x 8 Dual-Port Static RAMs with internal interrupt logic for interprocessor communications. The IDT71321 is designed to be used as a stand-alone 8-bit DualPort Static RAM or as a "MASTER" Dual-Port Static RAM together with the IDT71421 "SLAVE" Dual-Port in 16-bit-or-more word width systems. Using the IDT MASTER/SLAVE Dual-Port Static RAM approach in 16-or-more-bit memory system applications results in full speed, error-free operation without the need for additional discrete logic. Both devices provide two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Fabricated using CMOS high-performance technology, these devices typically operate on only 325mW of power. Low-power (LA) versions offer battery backup data retention capability, with each DualPort typically consuming 200µW from a 2V battery. The IDT71321/IDT71421 devices are packaged in 52-pin PLCC, 52-pin STQFP, 64-pin TQFP, and 64-pin STQFP. NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. PLG52 package body is approximately .75 in x .75 in x .17 in. PNG64 package body is approximately 14mm x 14mm x 1.4mm. PPG64 package body is approximately 10mm x 10mm x 1.4mm. 4. This package code is used to reference the package diagram. A0L OE L A10L INTL BUSYL R/WL CE L V CC CE R R/WR BUSYR INTR A10R OER A0R A1R A2R A3R A4R A5R A6R N/C A7R A8R A9R N/C N/C I/O7R I/O6R 2691 drw 02 N/C N/C A10R INTR BUSYR R/WR CER VCC VCC CEL R/WL BUSYL INTL A10L N/C N/C 48 4746 45444342 41 40 39 38 3736 3534 33 32 49 50 31 51 30 52 29 53 28 54 27 55 26 71321/421 PNG64/PPG64(4) 56 25 24 57 64-Pin TQFP 58 23 64-Pin STQFP 59 22 Top View 60 21 61 20 62 19 63 18 64 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 I/O5R I/O4R N/C I/O3R I/O2R I/O1R I/O0R GND GND N/C I/O7L I/O6L I/O5L I/O4L N/C I/O3L 2691 drw 03 OEL A0L A1L A2L A3L A4L A5L A6L N/C A7L A8L A9L N/C I/O0L I/O1L I/O2L I/O7R NC A 9R A 8R I/O 1R I/O 2R I/O 3R I/O 4R I/O 5R I/O 6R 20 19 18 17 16 15 14 13 12 11 10 9 8 7 21 6 22 5 23 4 24 3 25 2 26 1 27 71321/421 PLG52(4) 52 28 PLCC 51 29 Top View 50 30 49 31 48 32 47 33 34 35 36 37 38 39 40 41 42 43 44 45 46 A 7R A 6R A 5R A 4R A 3R A 2R A 1R A 0R OER I/O 4L I/O 5L I/O 6L I/O 7L NC GND I/O 0R I/O1L I/O 0L A9L A8L A7L A6L A5L A4L A3L A2L A1L I/O 3L I/O 2L Pin Configurations(1,2,3) 2 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges A9R N/C I/O7R A7R A8R 24 I/O4R 43 44 71321 45 PPG52(4) 46 52-Pin STQFP 47 Top View 48 49 50 51 52 1 2 3 4 5 6 7 8 9 10 11 12 23 22 I/O3R I/O2R A1L A2L A3L A4L A5L A6L A7L A8L CEL R/WL BUSYL INTL A10L OEL A0L 42 I/O1L R/WR CER VCC I/O6R I/O5R 21 20 19 18 17 16 15 14 13 I/O1R NOTES: 1. All VCC pins must be connected to power supply. 2. All GND pins must be connected to ground supply. 3. PPG52 package body is approximately 10mm x 10mm x 1.4mm. 4. This package code is used to reference the package diagram. I/O0R GND N/C I/O7L I/O6L I/O5L I/O4L 2691 drw 03a I/O2L I/O3L BUSYR 39 38 37 36 35 34 33 32 31 30 29 28 27 26 40 25 41 A9L I/O0L A10R INTR A0R A1R A2R A3R A4R A5R A6R OER Pin Configurations (continued)(1,2,3) Recommended Operating Temperature and Supply Voltage(1,2) Capacitance(1) (TA = +25°C, f = 1.0MHz) TQFP Only Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions(2) Max. Unit VIN = 3dV 9 pF VOUT = 3dV 10 pF Grade Commercial Industrial 2691 tbl 00 NOTES: 1. This parameter is determined by device characterization but is not production tested. 2. 3dv references the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V. Absolute Maximum Ratings(1) Symbol Rating Commercial & Industrial Unit Terminal Voltage with Respect to GND -0.5 to +7.0 V TBIAS Temperature Under Bias -55 to +125 o TSTG IOUT Storage Temperature DC Output Current -65 to +150 50 o GND Vcc 0OC to +70OC 0V 5.0V + 10% -40 C to +85 C 0V 5.0V + 10% O O 2691 tbl 02 NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. 2. Industrial temperature: for specific speeds, packages and powers contact your sales office. Recommended DC Operating Conditions Symbol VTERM(2) Ambient Temperature C VCC Supply Voltage GND Ground VIH Input High Voltage VIL C Parameter Input Low Voltage Min. Typ. Max. Unit 4.5 5.0 5.5 V 0 0 0 V 2.2 ____ (1) -0.5 NOTES: 1. VIL (min.) = -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 10%. mA 2691 tbl 01 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VCC + 10% for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > VCC + 10%. 3 6.42 ____ (2) 6.0 0.8 V V 2691 tbl 03 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1,4) (VCC = 5.0V ± 10%) 71321X20 71421X20 Com'l Only Symbol ICC ISB1 ISB2 ISB3 ISB4 Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports CMOS Level Inputs) Full Standby Current (One Port CMOS Level Inputs) Test Condition Version 71321X25 71421X25 Com'l & Ind Typ. Max. Typ. Max. Unit COM'L SA LA 110 110 250 200 110 110 220 170 mA IND SA LA ____ ____ ____ ____ 110 110 270 220 COM'L SA LA 30 30 65 45 30 30 65 45 IND SA LA ____ ____ ____ ____ 30 30 75 55 COM'L SA LA 65 65 165 125 65 65 150 115 IND SA LA ____ ____ ____ ____ 65 65 170 140 CEL and CER > VCC - 0.2V, VIN > VCC - 0.2V or VIN < 0.2V, f = 0(3) COM'L SA LA 1.0 0.2 15 5 1.0 0.2 15 5 IND SA LA ____ ____ ____ ____ 1.0 0.2 30 10 CE"A" < 0.2V and CE"B" > VCC - 0.2V(5) VIN > VCC - 0.2V or V IN < 0.2V Active Port Outputs Disabled, f = fMAX(2) COM'L SA LA 60 60 155 115 60 60 145 105 IND SA LA ____ ____ ____ ____ 60 60 165 130 CEL and CER = VIL, Outputs Disabled f = fMAX(2) CEL and CER = VIH f = fMAX(2) CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(2) mA mA mA mA 2691 tbl 04a 71321X35 71421X35 Com'l Only Symbol ICC ISB1 ISB2 ISB3 ISB4 Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports CMOS Level Inputs) Full Standby Current (One Port CMOS Level Inputs) Test Condition Version CEL and CER = VIL, Outputs Disabled f = fMAX(2) CEL and CER = VIH f = fMAX(2) CE"A" = VIL and CE"B" = VIH(5) Active Port Outputs Disabled, f=fMAX(2) CEL and CER > VCC - 0.2V, VIN > VCC - 0.2V or VIN < 0.2V, f = 0(3) CE"A" < 0.2V and CE"B" > VCC - 0.2V(5) VIN > VCC - 0.2V or V IN < 0.2V Active Port Outputs Disabled, f = fMAX(2) 71321X55 71421X55 Com'l & Ind Typ. Max. Typ. Max. Unit mA COM'L SA LA 80 80 165 120 65 65 155 110 IND SA LA ____ ____ ____ ____ 65 65 190 140 COM'L SA LA 25 25 65 45 20 20 65 35 IND SA LA ____ ____ ____ ____ 20 20 70 50 COM'L SA LA 50 50 125 90 40 40 110 75 IND SA LA ____ ____ ____ ____ 40 40 125 90 COM'L SA LA 1.0 0.2 15 4 1.0 0.2 15 4 IND SA LA ____ ____ ____ ____ 1.0 0.2 30 10 COM'L SA LA 45 45 110 85 40 40 100 70 IND SA LA ____ ____ ____ ____ 40 40 110 85 mA mA mA mA 2691 tbl 04b NOTES: 1. 'X' in part numbers indicates power rating (SA or LA). 2. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC TEST CONDITIONS” of input levels of GND to 3V. 3. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby. 4. Vcc = 5V, TA=+25°C for Typ and is not production tested. Vcc DC = 100mA (Typ) 5. Port "A" may be either left or right port. Port "B" is opposite from port "A". 4 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VCC = 5.0V ± 10%) 71321SA 71421SA Symbol Parameter Test Conditions (1) 71321LA 71421LA Min. Max. Min. Max. Unit 10 ___ 5 µA |ILI| Input Leakage Current VCC = 5.5V, VIN = 0V to V CC ___ |ILO| Output Leakage Current(1) CE = VIH, VOUT = 0V to V CC, VCC - 5.5V ___ 10 ___ 5 µA VOL Output Low Voltage (I/O0-I/O7) IOL = 4mA ___ 0.4 ___ 0.4 V VOL Open Drain Output Low Voltage (BUSY/INT) IOL = 16mA ___ 0.5 ___ 0.5 V VOH Output High Voltage IOH = -4mA 2.4 ___ 2.4 ___ V 2691 tbl 05 NOTE: 1. At Vcc < 2.0V leakages are undefined. Data Retention Characteristics (LA Version Only) Symbol Parameter VDR VCC for Data Retention ICCDR Data Retention Current tCDR(3) (3) tR Test Condition Min. Typ.(1) Max. Unit 2.0 ____ ____ V VCC = 2.0V, CE > VCC - 0.2V COM'L ____ 100 1500 µA VIN > VCC - 0.2V or VIN < 0.2V IND ____ 100 4000 µA 0 ____ ____ ns ____ ____ ns Chip Deselect to Data Retention Time (2) Operation Recovery Time tRC 2691 tbl 06 NOTES: 1. VCC = 2V, TA = +25°C, and is not production tested. 2. tRC = Read Cycle Time 3. This parameter is guaranteed but not production tested. Data Retention Waveform DATA RETENTION MODE VCC 4.5V VDR ≥ 2.0V tCDR 4.5V tR VDR CE VIH VIH , 2691 drw 04 5 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges AC Test Conditions Input Pulse Levels GND to 3.0V Input Rise/Fall Times 5ns Input Timing Reference Levels 1.5V Output Reference Levels 1.5V Output Load Figures 1,2 and 3 2691 tbl 07 5V 5V 1250Ω 1250Ω DATA OUT DATA OUT 775Ω 30pF* 775Ω 5pF* *100pF for 55ns versions Figure 1. AC Output Test Load Figure 2. Output Test Load (for tHZ, tLZ, tWZ, and tOW) * Including scope and jig. 5V 270Ω BUSY or INT 2691 drw 05 30pF* *100pF for 55ns versions Figure 3. BUSY and INT AC Output Test Load 6 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Supply Voltage Range(2) 71321X25 71421X25 Com'l & Ind 71321X20 71421X20 Com'l Only Symbol Parameter Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 20 ____ 25 ____ ns tAA Address Access Time ____ 20 ____ 25 ns tACE Chip Enable Access Time ____ 20 ____ 25 ns tAOE Output Enable Access Time ____ 11 ____ 12 ns tOH Output Hold from Address Change 3 ____ 3 ____ ns 0 ____ 0 ____ ns ____ 10 ____ 10 ns 0 ____ 0 ____ ns ____ 20 ____ 25 ns tLZ Output Low-Z Time tHZ (1,3) Output High-Z Time tPU (1,3) Chip Enable to Power Up Time (3) Chip Disable to Power Down Time tPD (3) 2691 tbl 08a 71321X35 71421X35 Com'l Only Symbol Parameter 71321X55 71421X55 Com'l & Ind Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 35 ____ 55 ____ ns tAA Address Access Time ____ 35 ____ 55 ns tACE Chip Enable Access Time ____ 35 ____ 55 ns tAOE Output Enable Access Time ____ 20 ____ 25 ns tOH Output Hold from Address Change 3 ____ 3 ____ ns tLZ Output Low-Z Time (1,3) 0 ____ 5 ____ ns tHZ Output High-Z Time (1,3) ____ 15 ____ 25 ns 0 ____ 0 ____ ns ____ 35 ____ 50 ns tPU tPD Chip Enable to Power Up Time (3) Chip Disable to Power Down Time (3) NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage Output Test Load (Figure 2). 2. 'X' in part numbers indicates power rating (SA or LA). 3. This parameter is guaranteed by device characterization, but is not production tested. 7 6.42 2691 tbl 08b 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges Timing Waveform of Read Cycle No. 1, Either Side(1) tRC ADDRESS tOH tAA tOH DATAOUT PREVIOUS DATA VALID DATA VALID BUSYOUT 2691 drw 06 tBDDH (2,3) NOTES: 1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition LOW. 2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relationship to valid output data. 3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD. Timing Waveform of Read Cycle No. 2, Either Side (3) tACE CE tAOE (4) tHZ (2) OE tHZ (2) tLZ(1) VALID DATA DATAOUT tLZ ICC CURRENT ISS (1) tPD tPU 50% (4) 50% 2691 drw 07 NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is de-asserted first, OE or CE. 3. R/W = VIH and OE = VIL, and the address is valid prior to or coincidental with CE transition LOW. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD. 8 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(4) 71321X25 71421X25 Com'l & Ind 71321X20 71421X20 Com'l Only Symbol Parameter Min. Max. Min. Max. Unit WRITE CYCLE tWC Write Cycle Time (2) 20 ____ 25 ____ ns tEW Chip Enable to End-of-Write 15 ____ 20 ____ ns tAW Address Valid to End-of-Write 15 ____ 20 ____ ns tAS Address Set-up Time 0 ____ 0 ____ ns ns (3) tWP Write Pulse Width 15 ____ 15 ____ tWR Write Recovery Time 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 10 ____ 12 ____ ns ____ 10 ____ 10 ns 0 ____ 0 ____ ns tHZ Output High-Z Time tDH Data Hold Time (1) (1) tWZ Write Enable to Output in High-Z ____ 10 ____ 10 ns tOW Output Active from End-of-Write (1) 0 ____ 0 ____ ns 2691 tbl 09a 71321X55 71421X55 Com'l & Ind 71321X35 71421X35 Com'l Only Symbol Parameter Min. Max. Min. Max. Unit WRITE CYCLE tWC Write Cycle Time (2) 35 ____ 55 ____ ns tEW Chip Enable to End-of-Write 30 ____ 40 ____ ns tAW Address Valid to End-of-Write 30 ____ 40 ____ ns tAS Address Set-up Time 0 ____ 0 ____ ns (3) tWP Write Pulse Width 25 ____ 30 ____ ns tWR Write Recovery Time 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 15 ____ 20 ____ ns tHZ Output High-Z Time (1) ____ 15 ____ 25 ns tDH Data Hold Time 0 ____ 0 ____ ns ____ 15 ____ 30 ns 0 ____ 0 ____ tWZ tOW (1) Write Enable to Output in High-Z Output Active from End-of-Write (1) ns 2691 tbl 09b NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by device characterization but is not production tested. 2. For Master/Slave combination, tWC = tBAA + tWP, since R/W = VIL must occur after tBAA . 3. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the bus for the required tDW. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 4. 'X' in part numbers indicates power rating (SA or LA). 9 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges Timing Waveform of Write Cycle No. 1, (R/W Controlled Timing)(1,5,8) tWC ADDRESS tHZ(7) OE tAW CE tAS(6) tWR(3) tWP(2) tHZ(7) R/W tWZ(7) tOW (4) DATA OUT (4) tDW tDH DATA IN 2691 drw 08 Timing Waveform of Write Cycle No. 2, (CE Controlled Timing)(1,5) tWC ADDRESS tAW CE tAS(6) tEW(2) (3) tWR R/W tDW tDH DATA IN 2691 drw 09 NOTES: 1. R/W or CE must be HIGH during all address transitions. 2. A write occurs during the overlap (tEW or tWP) of CE = VIL and R/W= VIL. 3. tWR is measured from the earlier of CE or R/W going HIGH to the end of the write cycle. 4. During this period, the l/O pins are in the output state and input signals must not be applied. 5. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal (CE or R/W) is asserted last. 7. This parameter is determined to be device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load (Figure 2). 8. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the bus for the required tDW. If OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 10 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(6) 71321X25 71421X25 Com'l & Ind 71321X20 71421X20 Com'l Only Symbol Parameter Min. Max. Min. Max. Unit BUSY Access Time from Address ____ 20 ____ 20 ns BUSY Disable Time from Address ____ 20 ____ 20 ns tBAC BUSY Access Time from Chip Enable ____ 20 ____ 20 ns tBDC BUSY Disable Time from Chip Enable ____ 20 ____ 20 ns tWH Write Hold After BUSY(5) 12 ____ 15 ____ ns ____ 50 ____ 50 ns ____ 35 ____ 35 ns 5 ____ 5 ____ ns ____ 25 ____ 35 ns 0 ____ 0 ____ ns 12 ____ 15 ____ ns ____ 40 ____ 50 ns ____ 30 ____ 35 BUSY TIMING (For MASTER 71321) tBAA tBDA (1) tWDD Write Pulse to Data Delay tDDD Write Data Valid to Read Data Delay (1) tAPS tBDD Arbitration Priority Set-up Time (2) (3) BUSY Disable to Valid Data BUSY INPUT TIMING (For SLAVE 71421) Write to BUSY Input(4) tWB tWH (5) Write Hold After BUSY (1) tWDD Write Pulse to Data Delay tDDD Write Data Valid to Read Data Delay (1) ns 2691 tbl 10a 71321X35 71421X35 Com'l Only Symbol Parameter 71321X55 71421X55 Com'l & Ind Min. Max. Min. Max. Unit BUSY Access Time from Address ____ 20 ____ 30 ns tBDA BUSY Disable Time from Address ____ 20 ____ 30 ns tBAC BUSY Access Time from Chip Enable ____ 20 ____ 30 ns BUSY Disable Time from Chip Enable ____ 20 ____ 30 ns ns BUSY TIMING (For MASTER 71321) tBAA tBDC (5) tWH Write Hold After BUSY 20 ____ 20 ____ tWDD Write Pulse to Data Delay(1) ____ 60 ____ 80 ns tDDD Write Data Valid to Read Data Delay (1) ____ 35 ____ 55 ns 5 ____ 5 ____ ns ____ 35 ____ 50 ns 0 ____ 0 ____ ns 20 ____ 20 ____ ns ____ 60 ____ 80 ns ____ 35 ____ 55 ns tAPS Arbitration Priority Set-up Time tBDD BUSY Disable to Valid Data(3) (2) BUSY INPUT TIMING (For SLAVE 71421) tWB tWH Write to BUSY Input(4) (5) Write Hold After BUSY (1) tWDD Write Pulse to Data Delay tDDD Write Data Valid to Read Data Delay (1) NOTES: 1. Port-to-port delay through RAM cells from the writing port to the reading port, refer to “Timing Waveform of Write with Port-to-Port Read and BUSY." 2. To ensure that the earlier of the two ports wins. 3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – tDW (actual). 4. To ensure that a write cycle is inhibited on port "B" during contention on port "A". 5. To ensure that a write cycle is completed on port "B" after contention on port "A". 6. 'X' in part numbers indicates power rating (SA or LA).. 11 6.42 2691 tbl 10b 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges Timing Waveform of Write with Port-to-Port Read and BUSY(2,3,4) tWC ADDR"A" MATCH tWP R/W "A" tDW DATA IN "A" tDH VALID tAPS(1) MATCH ADDR"B" tBAA tBDD tBDA BUSY"B" tWDD DATAOUT"B" VALID tDDD NOTES: 1. To ensure that the earlier of the two ports wins. tAPS is ignored for Slave (IDT71421). 2. CEL = CER = VIL 3. OE = VIL for the reading port. 4. All timing is the same for the left and right ports. Port "A" may be either the left or right port. Port "B" is opposite from port "A". 2691 drw 10 Timing Waveform of Write with BUSY(4) tWP R/W"A" tWB(3) BUSY"B" tWH (1) R/W"B" , (2) 2691 drw 11 NOTES: 1. tWH must be met for both BUSY input (IDT71421, slave) or output (IDT71321, Master). 2. BUSY is asserted on port "B" blocking R/W"B", until BUSY"B" goes HIGH. 3. tWB is only for the slave version (IDT71421). 4. All timing is the same for the left and right ports. Port "A" may be either the left or right port. Port "B" is opposite from port "A". 12 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges Timing Waveform of BUSY Arbitration Controlled by CE Timing(1) ADDR "A" AND "B" ADDRESSES MATCH CE"B" tAPS(2) CE"A" tBAC tBDC BUSY"A" 2691 drw 12 Timing Waveform of BUSY Arbitration Controlled by Address Match Timing(1) tRC or tWC ADDR"A" ADDRESSES MATCH ADDRESSES DO NOT MATCH (2) tAPS ADDR"B" tBAA tBDA BUSY"B" 2691 drw 13 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”. 2. If tAPS is not satisfied, the BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted (IDT71321 only). AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1) 71321X20 71421X20 Com'l Only Symbol Parameter 71321X25 71421X25 Com'l & Ind Min. Max. Min. Max. Unit INTERRUPT TIMING tAS Address Set-up Time 0 ____ 0 ____ ns tWR Write Recovery Time 0 ____ 0 ____ ns tINS Interrupt Set Time ____ 20 ____ 25 ns tINR Interrupt Reset Time ____ 20 ____ 25 ns 2691 tbl 11a NOTE: 1. 'X' in part numbers indicates power rating (SA or LA). 13 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges AC Electrical Characteristics Over the Operating Temperature Supply Voltage Range(1) 71321X35 71421X35 Com'l Only Symbol Parameter 71321X55 71421X55 Com'l & Ind Min. Max. Min. Max. Unit INTERRUPT TIMING tAS Address Set-up Time 0 ____ 0 ____ ns tWR Write Recovery Time 0 ____ 0 ____ ns tINS Interrupt Set Time ____ 25 ____ 45 ns tINR Interrupt Reset Time ____ 25 ____ 45 ns 2691 tbl 11b NOTE: 1. 'X' in part numbers indicates power rating (SA or LA). Timing Waveform of Interrupt Mode(1) Set INT tWC ADDR"A" INTERRUPT ADDRESS (2) tWR (4) tAS (3) R/W"A" tINS (3) INT"B" 2691 drw 14 Clear INT tRC (2) ADDR"B" INTERRUPT CLEAR ADDRESS tAS(3) OE"B" tINR(3) , INT"B" 2691 drw 15 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”. 2. See Interrupt Truth Table. 3. Timing depends on which enable signal (CE or R/W) is asserted last. 4. Timing depends on which enable signal (CE or R/W) is de-asserted first. 14 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges Truth Tables Truth Table I. Non-Contention Read/Write Control(4) Left or Right Port(1) R/W CE OE D0-7 Function X H X Z Port Disabled and in Power-Down Mode, ISB2 or ISB4 X H X Z CER = CEL = VIH, Power-Down Mode, ISB1 or ISB3 L L X DATAIN H L L DATAOUT H L H Z Data on Port Written Into Memory(2) Data in Memory Output on Port(3) High Impedance Outputs 2691 tbl 12 NOTES: 1. A0L – A10L ≠ A0R – A10R. 2. If BUSY = L, data is not written. 3. If BUSY = L, data may not be valid, see tWDD and tDDD timing. 4. 'H' = VIH, 'L' = VIL, 'X' = DON’T CARE, 'Z' = HIGH IMPEDANCE Truth Table II. Interrupt Flag(1,4) Left Port R/WL CEL L OEL L X X X X L INTL 7FF X X X A10L-A0L X X X Right Port L X OER X A10R-A0R X INTR Function (2) Set Right INTR Flag (3) L X L L 7FF H Reset Right INTR Flag L L X 7FE X Set Left INTL Flag (2) X X X X X Reset Left INTL Flag L 7FE X CER (3) X X R/WR H 2691 tbl 13 NOTES: 1. Assumes BUSYL = BUSYR = VIH 2. If BUSYL = VIL, then No Change. 3. If BUSYR = VIL, then No Change. 4. 'H' = HIGH, 'L' = LOW, 'X' = DON’T CARE Truth Table III — Address BUSY Arbitration Inputs Outputs CEL CER A0L-A10L A0R-A10R BUSYL(1) BUSYR(1) Function X X NO MATCH H H Normal H X MATCH H H Normal X H MATCH H H Normal L L MATCH (2) (2) Write Inhibit(3) 2691 tbl 14 NOTES: 1. Pins BUSYL and BUSYR are both outputs for IDT71321 (Master). Both are inputs for IDT71421 (Slave). BUSYX outputs on the IDT71321 are open drain, not pushpull outputs. On slaves the BUSYX input internally inhibits writes. 2. 'L' if the inputs to the opposite port were stable prior to the address and enable inputs of this port. 'H' if the inputs to the opposite port became stable after the address and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSYR outputs can not be LOW simultaneously. 3. Writes to the left port are internally ignored when BUSYL outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when BUSYR outputs are driving LOW regardless of actual logic level on the pin. 15 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges Functional Description Interrupts If the user chooses the interrupt function, a memory location (mail box or message center) is assigned to each port. The left port interrupt flag (INTL) is asserted when the right port writes to memory location 7FE (HEX), where a write is defined as the CER = R/WR = VIL, per Truth Table II. The left port clears the interrupt by accessing address location 7FE when CEL = OEL = VIL, R/W is a "don't care". Likewise, the right port interrupt flag (INTR) is asserted when the left port writes to memory location 7FF (HEX) and to clear the interrupt flag (INTR), the right port must access the memory location 7FF. The message (8 bits) at 7FE or 7FF is user-defined, since it is an addressable SRAM location. If the interrupt function is not used, address locations 7FE and 7FF are not used as mail boxes, but as part of the random access memory. Refer to Truth Table II for the interrupt operation. being expanded in depth, then the BUSY indication for the resulting array does not require the use of an external AND gate. Width Expansion with Busy Logic Master/Slave Arrays When expanding an SRAM array in width while using BUSY logic, one master part is used to decide which side of the SRAM array will receive a BUSY indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master, use the BUSY signal as a write inhibit signal. Thus on the IDT71321/IDT71421 SRAMs the BUSY pin is an output if the part is Master (IDT71321), and the BUSY pin is an input if the part is a Slave (IDT71421) as shown in Figure 3. 5V 270Ω MASTER Dual Port SRAM BUSYL MASTER Dual Port SRAM BUSYL BUSYL Busy Logic CE BUSYR CE BUSYR SLAVE Dual Port SRAM BUSYL SLAVE Dual Port SRAM BUSYL CE BUSYR DECODER The IDT71321/IDT71421 provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT71321/IDT71421 has an automatic power down feature controlled by CE. The CE controls on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE = VIH). When a port is enabled, access to the entire memory array is permitted. 5V 270Ω CE BUSYR BUSYR 2691 drw 16 Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two accesses to proceed and signals the other side that the RAM is “Busy”. The BUSY pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a busy indication, the write signal is gated internally to prevent the write from proceeding. The use of BUSY Logic is not required or desirable for all applications. In some cases it may be useful to logically OR the BUSY outputs together and use any BUSY indication as an interrupt source to flag the event of an illegal or illogical operation. In slave mode the BUSY pin operates solely as a write inhibit input pin. Normal operation can be programmed by tying the BUSY pins HIGH. If desired, unintended write operations can be prevented to a port by tying the BUSY pin for that port LOW. The BUSY outputs on the IDT71321 (Master) are open drain type outputs and require open drain resistors to operate. If these SRAMs are Figure 3. Busy and chip enable routing for both width and depth expansion with IDT71321 (Master) and (Slave) IDT71421 SRAMs. If two or more master parts were used when expanding in width, a split decision could result with one master indicating BUSY on one side of the array and another master indicating BUSY on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for the other part of the word. The BUSY arbitration, on a Master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enough for a BUSY flag to be output from the master before the actual write pulse can be initiated with either the R/W signal or the byte enables. Failure to observe this timing can result in a glitched internal write inhibit signal and corrupted data in the slave. 16 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges Ordering Information XXXX A 999 A Device Type Power Speed Package A A Process/ Temperature Range A Blank 8 Tube or Tray Tape and Reel Blank I(1) Commercial (0°C to +70°C) Industrial (-40°C to +85°C) G Green J PF PP TF 52-pin PLCC (PLG52) 64-pin TQFP (PNG64) 52-pin STQFP (PPG52) 64-pin STQFP (PPG64) 20 25 35 55 Commercial Only Industrial Only Commercial Only Commercial & Industrial LA SA Low Power Standard Power 71321 71421 16K (2K x 8-Bit) MASTER Dual-Port SRAM w/ Interrupt 16K (2K x 8-Bit) SLAVE Dual-Port SRAM w/ Interrupt Speed in nanoseconds 2691 drw 18 NOTES: 1. Contact your sales office for industrial temperature range availability in other speeds, packages and powers. LEAD FINISH (SnPb) parts are Obsolete. Product Discontinuation Notice - PDN# SP-17-02 Note that information regarding recently obsoleted parts are included in this datasheet for customer convenience. Orderable Part Information Speed (ns) 20 25 55 Pkg. Code Pkg. Type Temp. Grade Speed (ns) 71321LA20JG PLG52 PLCC C 35 71321LA20JG8 PLG52 PLCC C 71321LA20PFG PNG64 TQFP C 55 71321LA20PFG8 PNG64 TQFP C 71321SA55JG8 71321LA20TFG PPG64 TQFP C 71321LA20TFG8 PPG64 TQFP C 71321LA25JGI PLG52 PLCC I 71321LA25JGI8 PLG52 PLCC I Speed (ns) 20 Orderable Part ID Pkg. Code Pkg. Type Temp. Grade 71321SA35TFG PPG64 TQFP C 71321SA35TFG8 PPG64 TQFP C 71321SA55JG PLG52 PLCC C PLG52 PLCC C Pkg. Code Pkg. Type Temp. Grade Orderable Part ID Orderable Part ID 71321LA25PFGI PNG64 TQFP I 71421LA20JG PLG52 PLCC C 71321LA25PFGI8 PNG64 TQFP I 71421LA20JG8 PLG52 PLCC C 71321LA25TFGI PPG64 TQFP I 71421LA20PFG PNG64 TQFP C 71321LA25TFGI8 PPG64 TQFP I 71421LA20PFG8 PNG64 TQFP C 71321LA55PPGI PPG52 TQFP I 71421LA25PFGI PNG64 TQFP I 71321LA55PPGI8 PPG52 TQFP I 71421LA25PFGI8 PNG64 TQFP I 71321LA55TFG PPG64 TQFP C 71321LA55TFG8 PPG64 TQFP C 25 17 6.42 71321SA/LA and 71421SA/LA High Speed 2K x 8 Dual-Port Static RAM with Interrupts Industrial and Commercial Temperature Ranges Datasheet Document History 03/24/99: Pages 2 & 3 06/07/99: 11/10/99: 08/23/01: Page 3 Page 4 Page 16 Page 4 01/17/06: 08/25/06: 10/29/08: 09/10/12: 06/10/16: Page 7 & 9 Page 17 Page 1 Page 17 Page 1 & 17 Page 14 Page 17 Page 1 & 2 Page 3 Page 9 Page 17 Page 2 Page 3 Pages 2 & 17 02/20/18: 09/24/19: Pages 1 & 17 Pages 2 & 3 Page 3 Page 5 Page 17 Initiated datasheet document history Converted to new format Cosmetic typographical corrections Added additional notes to pin configurations Changed drawing format Replaced IDT logo Increased storage temperature parameters Clarified TA parameter DC Electrical parameters–changed wording from "open" to "disabled" Fixed part numbers in "Width Expansion" paragraph Changed ±500mV to 0mV in notes Industrial temperature range offering added to DC Electrical Characteristics for 25ns and removed for 35ns Industrial temperature range added to AC Electrical Characteristics for 25ns Industrial offering removed for 35ns ordering information Added green availability to features Added green indicator to ordering information Replaced old IDTTM with new IDTTM logo Changed INT"A" to INT"B" in the CLEAR INT drawing in the Timing Waveform of Interrupt Mode Removed "IDT" from orderable part number 52-pin STQFP added to the features and description PP52-1 pin configuration added Typo corrected Added T&R indicator and PP52-1 package information to the ordering information Changed diagram for the J52 pin configuration by rotating package pin labels and pin numbers 90 degrees clockwise to reflect pin1 orientation and added pin 1 dot at pin 1 Removed J52 chamfers and aligned the top and bottom pin labels in the standard direction Changed diagram for the PN64/PP64 pin configuration by rotating package pin labels and pin numbers 90 degrees counter clockwise to reflect pin 1 orientation and added pin 1 dot at pin 1 PP52 pin configuration. Added the IDT logo, changed the text to be in alignment with new diagram marking specs Removed footnote 5 and its references In pin configuration footnotes and in the Ordering Information: The package codes J52-1, PN64-1, PP64-1 and PP52-1 changed to J52, PN64, PP64 & PP52 respectively to match standard package codes Product Discontinuation Notice - PDN# SP-17-02 Last time buy expires June 15, 2018 Deleted obsolete Commercial 25ns speed grade Updated package codes Rotated PPG52 STQFP pin configuration to accurately reflect pin 1 orientation Typo corrected in the Data Retention Characteristics table 06 Added Orderable Part Information CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 18 6.42 for Tech Support: 408-284-2794 DualPortHelp@idt.com IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. 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Renesas' products are provided only subject to Renesas' Terms and Conditions of Sale or other applicable terms agreed to in writing. No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products. (Rev.1.0 Mar 2020) Corporate Headquarters Contact Information TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/ Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners. © 2020 Renesas Electronics Corporation. All rights reserved.
71421SA20PF8
物料型号: - 71321SA/LA - 71421SA/LA

器件简介: - 这些是高速2K x 8位双端口静态RAM,具有内部中断逻辑,用于处理器间通信。 - IDT71321设计为独立使用的8位双端口静态RAM或作为“主”双端口静态RAM与IDT71421“从”双端口在16位或更宽字宽系统中使用。

引脚分配: - 两个设备都提供两个独立的端口,具有单独的控制、地址和I/O引脚,允许对内存中的任何位置进行独立的读写访问。 - 提供了详细的引脚配置图和说明。

参数特性: - 高速访问:商业级为20/35/55ns,工业级为25/55ns。 - 低功耗操作:IDT71321/IDT71421SA活跃时典型325mW,待机时5mW;IDT71321/421LA活跃时典型325mW,待机时1mW。

功能详解: - 包含中断标志、主从模式下的总线宽度扩展、片上端口仲裁逻辑、忙碌输出标志等。 - 支持电池备份操作,2V数据保持(仅限LA型号)。 - TTL兼容,单5V ±10%电源供电。

应用信息: - 适用于工业和商业温度范围,特定速度的工业温度范围产品可用。

封装信息: - 封装类型包括52-Pin PLCC、52-Pin STQFP、64-Pin TQFP和64-Pin STQFP。 - 提供了封装的尺寸信息和顶视图。
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