72V82L15PA8

3.3 Volt CMOS DUAL ASYNCHRONOUS FIFO DUAL 512 x 9, DUAL 1,024 x 9 DUAL 2,048 x 9, DUAL 4,096 X 9 DUAL 8,192 X 9 LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018 FEATURES: • • • • • • • • • • • • • • • • IDT72V81 IDT72V82 IDT72V83 IDT72V84 IDT72V85 DESCRIPTION: The IDT72V81 is equivalent to two IDT72V01 - 512 x 9 FIFOs The IDT72V82 is equivalent to two IDT72V02 - 1,024 x 9 FIFOs The IDT72V83 is equivalent to two IDT72V03 - 2,048 x 9 FIFOs The IDT72V84 is equivalent to two IDT72V04 - 4,096 x 9 FIFOs The IDT72V85 is equivalent to two IDT72V05 - 8,192 x 9 FIFOs Low power consumption — Active: 330 mW (max.) — Power-down: 18 mW (max.) Ultra high speed—15 ns access time Asynchronous and simultaneous read and write Offers optimal combination of data capacity, small foot print and functional flexibility Ideal for bidirectional, width expansion, depth expansion, busmatching, and data sorting applications Status Flags: Empty, Half-Full, Full Auto-retransmit capability High-performance CMOS™ technology Space-saving TSSOP package Industrial temperature range (–40°°C to +85°°C) is available Green parts available, see ordering information The IDT72V81/72V82/72V83/72V84/72V85 are dual-FIFO memories that load and empty data on a first-in/first-out basis. These devices are functional and compatible to two IDT72V01/72V02/72V03/72V04/72V05 FIFOs in a single package with all associated control, data, and flag lines assigned to separate pins. The devices use Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for unlimited expansion capability in both word size and depth. The reads and writes are internally sequential through the use of ring pointers, with no address information required to load and unload data. Data is toggled in and out of the devices through the use of the Write (W) and Read (R) pins. The devices utilize a 9-bit wide data array to allow for control and parity bits at the user’s option. This feature is especially useful in data communications applications where it is necessary to use a parity bit for transmission/reception error checking. It also features a Retransmit (RT) capability that allows for reset of the read pointer to its initial position when RT is pulsed low to allow for retransmission from the beginning of data. A Half-Full Flag is available in the single device mode and width expansion modes. These FIFOs are fabricated using high-speed CMOS technology. They are designed for those applications requiring asynchronous and simultaneous read/writes in multiprocessing and rate buffer applications. FUNCTIONAL BLOCK DIAGRAM DATA INPUTS (DA0-DA8) WA WRITE CONTROL RAM ARRAY A 512 x 9 1,024 x 9 2,048 x 9 4,096 x 9 8,192 x 9 WRITE POINTER RSA DATA INPUTS (DB0-DB8) WB WRITE CONTROL WRITE POINTER READ POINTER READ CONTROL READ CONTROL RESET LOGIC FLAG LOGIC XOA/HFA RESET LOGIC FLAG LOGIC EXPANSION LOGIC XIA READ POINTER THREESTATE BUFFERS THREESTATE BUFFERS RA RAM ARRAY A 512 x 9 1,024 x 9 2,048 x 9 4,096 x 9 8,192 x 9 RSB EXPANSION LOGIC FFA EFA DATA OUTPUTS (QA0-QA8) RB FLA/RTA XIB XOB/HFB FFB IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc. The AsyncFIFO™ is a trademark of Integrated Device Technology, Inc. COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES EFB DATA OUTPUTS (QB0-QB8) FLB/RTB 3966 drw 01 NOVEMBER 2017 1 © 2017 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice. DSC-3966/6 COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES IDT72V81/72V82/72V83/72V84/72V85 3.3V CMOS DUAL ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION Symbol Rating Terminal Voltage with Respect to GND Storage Temperature DC Output Current VTERM FFA QA0 QA1 QA2 QA3 QA8 GND RA QA4 QA5 QA6 QA7 XOA/HFA EFA FFB QB0 QB1 QB2 QB3 QB8 GND RB QB4 QB5 QB6 QB7 XOB/HFB EFB 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 XIA DA0 DA1 DA2 DA3 DA8 WA VCC DA4 DA5 DA6 DA7 FLA/RTA RSA XIB DB0 DB1 DB2 DB3 DB8 WB VCC DB4 DB5 DB6 DB7 FLB/RTB RSB 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 TSTG IOUT Com'l & Ind'l Unit –0.5 to +7.0 V –55 to +125 –50 to +50 °C mA NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS Symbol VCC GND VIH(1) VIL(2) TA TA Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Operating Temperature Commercial Operating Temperature Industrial Min. Typ. Max. Unit 3.0 3.3 3.6 V 0 0 0 V 2.0 — VCC+0.5 V — — 0.8 V 0 — 70 °C -40 — 85 °C NOTES: 1. For RT/RS/XI input, VIH = 2.6V (commercial and industrial). 2. 1.5V undershoots are allowed for 10ns once per cycle CAPACITANCE (TA = +25°C, f = 1.0 MHz) 3966 drw 02 Parameter(1) Input Capacitance Output Capacitance Symbol CIN COUT TSSOP (SO56-2, order code: PA) TOP VIEW Condition VIN = 0V VOUT = 0V Max. 8 8 NOTE: 1. Characterized values, not currently tested. DC ELECTRICAL CHARACTERISTICS (1) (Commercial: VCC = 3.3V±0.3V, TA = 0°C to +70°C; Industrial: VCC = 3.3V±0.3V, TA = -40°C to +85°C) Commercial tA = 15, 20 ns Symbol Parameter ILI(1) ILO(2) Input Leakage Current (Any Input) Output Leakage Current Output Logic “1” Voltage IOH = –2mA Output Logic “0” Voltage IOL = 8mA Active Power Supply Current (both FIFOs) Standby Current (R=W=RS=FL/RT=VIH) VOH VOL ICC1(3,4) ICC2(3,5) Industrial tA = 20 ns Min. Max. Min. Max. Unit –1 –10 2.4 — — — 1 10 — 0.4 100 5 –1 –10 2.4 — — — 1 10 — 0.4 120 5 μA μA V V mA mA NOTES: 1. Measurements with 0.4 ≤ VIN ≤ VCC. 2. R ≥ VIH, 0.4 ≤ VOUT ≤ VCC. 3. Tested with outputs open (IOUT = 0). 4. Tested at f = 20 MHz. 5. All Inputs = VCC - 0.2V or GND + 0.2V. AC TEST CONDITIONS Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load 3.3V 330Ω TO OUTPUT PIN 510Ω GND to 3.0V 5ns 1.5V 1.5V See Figure 1 30pF* 3966 drw 03 or equivalent circuit Figure 1. Output Load *Includes scope and jib capacitances. 2 Unit pF pF COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES IDT72V81/72V82/72V83/72V84/72V85 3.3V CMOS DUAL ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 AC ELECTRICAL CHARACTERISTICS(1) (Commercial: VCC = 3.3V±0.3V, TA = 0°C to +70°C; Industrial: VCC = 3.3V±0.3V, TA = -40°C to +85°C) Symbol tS tRC tA tRR tRPW tRLZ tWLZ tDV tRHZ tWC tWPW tWR tDS tDH tRSC tRS tRSS tRSR tRTC tRT tRTS tRTR tEFL tHFH,FFH tRTF tREF tRFF tRPE tWEF tWFF tWHF tRHF tWPF tXOL tXOH tXI tXIR tXIS Commercial Commercial & Industrial IDT72V81L15 IDT72V82L15 IDT72V83L15 IDT72V84L15 IDT72V85L15 IDT72V81L20 IDT72V82L20 IDT72V83L20 IDT72V84L20 IDT72V85L20 Parameter Shift Frequency Read Cycle Time Access Time Read Recovery Time Read Pulse Width(2) Read Pulse Low to Data Bus at Low Z(3) Write Pulse High to Data Bus at Low Z(3, 4) Min. — 25 — 10 15 3 5 Max. 40 — 15 — — — — Min. — 30 — 10 20 3 5 Max. 33.3 — 20 — — — — Unit MHz ns ns ns ns ns ns Data Valid from Read Pulse High Read Pulse High to Data Bus at High Z(3) Write Cycle Time Write Pulse Width(2) Write Recovery Time Data Set-up Time Data Hold Time Reset Cycle Time Reset Pulse Width(2) Reset Set-up Time(3) Reset Recovery Time Retransmit Cycle Time Retransmit Pulse Width(2) Retransmit Set-up Time(3) Retransmit Recovery Time Reset to Empty Flag Low Reset to Half-Full and Full Flag High Retransmit Low to Flags Valid Read Low to Empty Flag Low Read High to Full Flag High Read Pulse Width after EF High Write High to Empty Flag High Write Low to Full Flag Low Write Low to Half-Full Flag Low Read High to Half-Full Flag High Write Pulse Width after FF High Read/Write to XO Low Read/Write to XO High XI Pulse Width(2) XI Recovery Time XI Set-up Time 5 — 25 15 10 11 0 25 15 15 10 25 15 15 10 — — — — — 15 — — — — 15 — — 15 10 10 — 15 — — — — — — — — — — — — — 25 25 25 15 15 — 15 15 25 25 — 15 15 — — — 5 — 30 20 10 12 0 30 20 20 10 30 20 20 10 — — — — — 20 — — — — 20 — — 20 10 10 — 15 — — — — — — — — — — — — — 30 30 30 20 20 — 20 20 30 30 — 20 20 — — — ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTES: 1. Timings referenced as in AC Test Conditions. 2. Pulse widths less than minimum value are not allowed. 3. Values guaranteed by design, not currently tested. 4. Only applies to read data flow-through mode. 3 IDT72V81/72V82/72V83/72V84/72V85 3.3V CMOS DUAL ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 SIGNAL DESCRIPTIONS COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES Single Device Mode, this pin acts as the retransmit input. The Single Device Mode is initiated by grounding the Expansion In (XI). The IDT72V81/72V82/72V83/72V84/72V85 can be made to retransmit data when the Retransmit Enable control (RT) input is pulsed low. A retransmit operation will set the internal read pointer to the first location and will not affect the write pointer. Read Enable (R) and Write Enable (W) must be in the high state during retransmit for the IDT72V81/72V82/72V83/72V84/72V85 respectively. This feature is useful when less than 512/1,024/2,048/4,096/8,192 writes are performed between resets. The retransmit feature is not compatible with the Depth Expansion Mode and will affect the Half-Full Flag (HF), depending on the relative locations of the read and write pointers. INPUTS: DATA IN (D0 – D8) Data inputs for 9-bit wide data. CONTROLS: RESET ( RS ) Reset is accomplished whenever the Reset (RS) input is taken to a low state. During reset, both internal read and write pointers are set to the first location. A reset is required after power up before a write operation can take place. Both the Read Enable ( R ) and Write Enable ( W ) inputs must be in the high state during the window shown in Figure 2, (i.e., tRSS before the rising edge of RS ) and should not change until tRSR after the rising edge of RS. Half-Full Flag ( HF ) will be reset to high after Reset ( RS ). EXPANSION IN ( XI ) This input is a dual-purpose pin. Expansion In (XI) is grounded to indicate an operation in the single device mode. Expansion In (XI) is connected to Expansion Out (XO) of the previous device in the Depth Expansion or Daisy Chain Mode. WRITE ENABLE ( W ) A write cycle is initiated on the falling edge of this input if the Full Flag (FF) is not set. Data set-up and hold times must be adhered to with respect to the rising edge of the Write Enable (W). Data is stored in the RAM array sequentially and independently of any on-going read operation. After half of the memory is filled and at the falling edge of the next write operation, the Half-Full Flag (HF) will be set to low and will remain set until the difference between the write pointer and read pointer is less than or equal to one half of the total memory of the device. The Half-Full Flag (HF) is then reset by the rising edge of the read operation. To prevent data overflow, the Full Flag (FF) will go low, inhibiting further write operations. Upon the completion of a valid read operation, the Full Flag (FF) will go high after tRFF, allowing a valid write to begin. When the FIFO is full, the internal write pointer is blocked from W, so external changes in W will not affect the FIFO when it is full. OUTPUTS: FULL FLAG ( FF ) The Full Flag (FF) will go low, inhibiting further write operation, when the write pointer is one location less than the read pointer, indicating that the device is full. If the read pointer is not moved after Reset (RS), the Full-Flag (FF) will go low after 512 writes for the IDT72V81, 1,024 writes for the IDT72V82, 2,048 writes for the IDT72V83, 4,096 writes for the IDT72V84 and 8,192 writes for the IDT72V85. EMPTY FLAG ( EF ) The Empty Flag (EF) will go low, inhibiting further read operations, when the read pointer is equal to the write pointer, indicating that the device is empty. EXPANSION OUT/HALF-FULL FLAG ( XO/HF ) This is a dual-purpose output. In the single device mode, when Expansion In (XI) is grounded, this output acts as an indication of a half-full memory. After half of the memory is filled and at the falling edge of the next write operation, the Half-Full Flag (HF) will be set low and will remain set until the difference between the write pointer and read pointer is less than or equal to one half of the total memory of the device. The Half-Full Flag (HF) is then reset by using rising edge of the read operation. In the Depth Expansion Mode, Expansion In (XI) is connected to Expansion Out (XO) of the previous device in the Daisy Chain by providing a pulse to the next device when the previous device reaches the last location of memory. READ ENABLE ( R ) A read cycle is initiated on the falling edge of the Read Enable (R) provided the Empty Flag (EF) is not set. The data is accessed on a First-In/First-Out basis, independent of any ongoing write operations. After Read Enable (R) goes high, the Data Outputs (Q0 – Q8) will return to a high impedance condition until the next Read operation. When all data has been read from the FIFO, the Empty Flag (EF) will go low, allowing the “final” read cycle but inhibiting further read operations with the data outputs remaining in a high impedance state. Once a valid write operation has been accomplished, the Empty Flag (EF) will go high after tWEF and a valid Read can then begin. When the FIFO is empty, the internal read pointer is blocked from R so external changes in R will not affect the FIFO when it is empty. DATA OUTPUTS ( Q0 – Q8 ) Data outputs for 9-bit wide data. This data is in a high impedance condition whenever Read (R) is in a high state. FIRST LOAD/RETRANSMIT ( FL/RT ) This is a dual-purpose input. In the Depth Expansion Mode, this pin is grounded to indicate that it is the first loaded (see Operating Modes). In the 4 COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES IDT72V81/72V82/72V83/72V84/72V85 3.3V CMOS DUAL ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 tRSC tRS RS tRSS tRSR W tRSS R tEFL EF tHFH, tFFH HF, FF 3966 drw 04 NOTES: 1. EF, FF, HF may change status during Reset, but flags will be valid at tRSC. 2. W and R = VIH around the rising edge of RS. Figure 2. Reset tRC tA tRPW tRR tA R tDV tRLZ Q0-Q8 tRHZ DATA OUT VALID tWPW tWC DATA OUT VALID tWR W tDS D0-D8 tDH DATA IN VALID DATA IN VALID 3966 drw 05 Figure 3. Asynchronous Write and Read Operation LAST WRITE IGNORED WRITE FIRST READ ADDITIONAL READS FIRST WRITE R W tWFF tRFF 3966 drw 06 FF Figure 4. Full Flag From Last Write to First Read 5 COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES IDT72V81/72V82/72V83/72V84/72V85 3.3V CMOS DUAL ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 LAST READ IGNORED READ FIRST WRITE ADDITIONAL WRITES FIRST READ W R tREF tWEF EF tA DATA OUT VALID VALID 3966 drw 07 Figure 5. Empty Flag From Last Read to First Write tRTC tRT RT tRTR tRTS W,R tRTF HF, EF, FF FLAG VALID 3966 drw 08 Figure 6. Retransmit W tWEF EF tRPE R 3966 drw 09 Figure 7. Minimum Timing for an Empty Flag Coincident Read Pulse R tRFF FF tWPF W 3966 drw 10 Figure 8. Minimum Timing for an Full Flag Coincident Write Pulse 6 COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES IDT72V81/72V82/72V83/72V84/72V85 3.3V CMOS DUAL ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 W tRHF R tWHF HF HALF-FULL OR LESS HALF-FULL OR LESS MORE THAN HALF-FULL 3966 drw 11 Figure 9. Half-Full Flag Timing WRITE TO LAST PHYSICAL LOCATION W READ FROM LAST PHYSICAL LOCATION R tXOL tXOH tXOH tXOL 3966 drw 12 XO Figure 10. Expansion Out tXI tXIR XI tXIS W WRITE TO FIRST PHYSICAL LOCATION tXIS R READ FROM FIRST PHYSICAL LOCATION 3966 drw 13 Figure 11. Expansion In OPERATING MODES: strates a four-FIFO Depth Expansion using two IDT72V81/72V82/72V83/ 72V84/72V85s. Any depth can be attained by adding additional IDT72V81/ 72V82/72V83/72V84/72V85s. These FIFOs operate in the Depth Expansion mode when the following conditions are met: Care must be taken to assure that the appropriate flag is monitored by each system (i.e. FF is monitored on the device where W is used; EF is monitored on the device where R is used). 1. The first FIFO must be designated by grounding the First Load (FL) control input. 2. All other FIFOs must have FL in the high state. 3. The Expansion Out (XO) pin of each device must be tied to the Expansion In (XI) pin of the next device. See Figure 14. 4. External logic is needed to generate a composite Full Flag (FF) and Empty Flag (EF). This requires the ORing of all EFs and ORing of all FFs (i.e. all must be set to generate the correct composite FF or EF). See Figure 14. 5. The Retransmit (RT) function and Half-Full Flag (HF) are not available in the Depth Expansion Mode. Single Device Mode A single IDT72V81/72V82/72V83/72V84/72V85 may be used when the application requirements are for 512/1,024/2,048/4,096/8,192 words or less. These FIFOs are in a Single Device Configuration when the Expansion In (XI) control input is grounded (see Figure 12). Depth Expansion These devices can easily be adapted to applications when the requirements are for greater than 512/1,024/2,048/4,096/8,192 words. Figure 14 demon7 COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES IDT72V81/72V82/72V83/72V84/72V85 3.3V CMOS DUAL ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 USAGE MODES: FIFO permits a reading of a single word after writing one word of data into an empty FIFO. The data is enabled on the bus in (tWEF + tA) ns after the rising edge of W, called the first write edge, and it remains on the bus until the R line is raised from low-to-high, after which the bus would go into a three-state mode after tRHZ ns. The EF line would have a pulse showing temporary deassertion and then would be asserted. In the write flow-through mode (Figure 18), the FIFO permits the writing of a single word of data immediately after reading one word of data from a full FIFO. The R line causes the FF to be deasserted but the W line being low causes it to be asserted again in anticipation of a new data word. On the rising edge of W, the new word is loaded in the FIFO. The W line must be toggled when FF is not asserted to write new data in the FIFO and to increment the write pointer. Width Expansion Word width may be increased simply by connecting the corresponding input control signals of multiple FIFOs. Status flags (EF, FF and HF) can be detected from any one FIFO. Figure 13 demonstrates an 18-bit word width by using the two FIFOs contained in the IDT72V81/72V82/72V83/72V84/72V85s. Any word width can be attained by adding FIFOs (Figure 13). Bidirectional Operation Applications which require data buffering between two systems (each system capable of Read and Write operations) can be achieved by pairing IDT72V81/72V82/72V83/72V84/72V85s as shown in Figure 16. Both Depth Expansion and Width Expansion may be used in this mode. Compound Expansion The two expansion techniques described above can be applied together in a straightforward manner to achieve large FIFO arrays (see Figure 15). Data Flow-Through Two types of flow-through modes are permitted, a read flow-through and write flow-through mode. For the read flow-through mode (Figure 17), the (HALF-FULL FLAG) WRITE (W) (HF) READ (R) FIFO A or B IDT 72V81 72V82 72V83 72V84 72V85 9 DATA IN (D) FULL FLAG (FF) RESET (RS) 9 DATA OUT (Q) EMPTY FLAG (EF) RETRANSMIT (RT) 3966 drw 14 EXPANSION IN (XI) Figure 12. Block Diagram of One 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 FIFO Used in Single Device Mode 9 18 DATA IN (D) HFA HFB FIFO A FIFO B 9 WRITE (W) READ (R) EMPTY FLAG (EFB) FULL FLAG (FFA) RESET (RS) RETRANSMIT (RT) 9 72V81/72V82/72V83 XIA 9 72V84/72V85 XIB 18 DATA OUT (Q) 3966 drw 15 Figure 13. Block Diagram of One 512 x 18, 1,024 x 18, 2,048 x 18, 4,096 x 18 and 8,192 x 18 FIFO Memory Used in Width Expansion Mode 8 COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES IDT72V81/72V82/72V83/72V84/72V85 3.3V CMOS DUAL ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 TABLE I—RESET AND RETRANSMIT Single Device Configuration/Width Expansion Mode Reset Retransmit RS 0 1 Inputs RT X 0 XI 0 0 Read Pointer Location Zero Location Zero Read/Write 1 1 0 Increment(1) Mode Internal Status Write Pointer Location Zero Unchanged EF 0 X Increment(1) Outputs FF 1 X X HF 1 X X X NOTE: 1. Pointer will increment if flag is High. TABLE II—RESET AND FIRST LOAD TRUTH TABLE Depth Expansion/Compound Expansion Mode Mode Reset First Device Reset All Other Devices Read/Write RS 0 0 Inputs FL 0 1 XI (1) (1) 1 X (1) Internal Status Read Pointer Write Pointer Location Zero Location Zero Location Zero Location Zero X Outputs X EF 0 0 FF 1 1 X X NOTE: 1. XI is connected to XO of previous device. See Figure 14. RS = Reset Input, FL/RT = First Load/Retransmit, EF = Empty Flag Output, FF = Full Flag Output, sion Input, HF = Half-Full Flag Output XOA EFA FFA FIFO A FLA XIA 72V81/72V82 72V83/72V84 72V85 W FFB D 9 9 XOB R EFB FIFO B 9 FLB Q V CC XIB XOA FFA FULL EFA EMPTY FIFO A 9 FLA 72V81/72V82 72V83/72V84 72V85 FFB 9 XIA XOB EFB FIFO B RSA FLB XIB 3966 drw 16 Figure 14. Block Diagram of 2,048 x 9, 4,096 x 9, 8,192 x 9, 16,384 x 9 and 32,768 x 9 FIFO Memory (Depth Expansion) 9 XI = Expan- COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES IDT72V81/72V82/72V83/72V84/72V85 3.3V CMOS DUAL ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 R, W, RS Q0-Q8 Q9-Q17 Q(N-8)-QN Q0-Q8 Q9-Q17 Q(N-8)-QN IDT 72V81/72V82/72V83 72V84/72V85 IDT 72V81/72V82/72V83 72V84/72V85 IDT 72V81/72V82/72V83 72V84/72V85 DEPTH EXPANSION BLOCK DEPTH EXPANSION BLOCK DEPTH EXPANSION BLOCK D9-D17 D0-D8 D(N-8)-DN D0-DN D9-DN D18-DN NOTES: 1. For depth expansion block see section on Depth Expansion and Figure 14. 2. For Flag detection see section on Width Expansion and Figure 13. D(N-8)-DN 3966 drw 17 Figure 15. Compound FIFO Expansion WA RA EFA HFA FIFO IDTA 7201A FFA DA 0-8 QA 0-8 IDT 72V81 72V82 72V83 72V84 72V85 SIDE 1 SIDE 2 DA 0-8 QB 0-8 RB HFB EFB WB FIFO B FFB 3966 drw 18 Figure 16. Bidirectional FIFO Mode DATA IN W tRPE R EF tWLZ tWEF tA DATA OUT tREF DATA OUT VALID 3966 drw 19 Figure 17. Read Data Flow-Through Mode 10 COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES IDT72V81/72V82/72V83/72V84/72V85 3.3V CMOS DUAL ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9, 8192 x 9 R tWPF W tRFF FF tDH tWFF DATA DATA IN tA DATA OUT IN VALID tDS DATA OUT VALID 3966 drw 20 Figure 18. Write Data Flow-Through Mode 11 ORDERING INFORMATION XXXX X XXX X Device Type Power Speed Package X X X Process/ Temperature Range Blank 8 Tube or Tray Tape and Reel Blank I Commercial (0°C to +70°C) Industrial (-40°C to +85°C) G(1) Green PA Thin Shrink SOIC (TSSOP, SO56-2) 15 20 Commercial Only Commerical & Industrial L Low Power 72V81 72V82 72V83 72V84 72V85 512 x 9 ⎯ 3.3V Dual FIFO 1,024 x 9 ⎯ 3.3V Dual FIFO 2,048 x 9 ⎯ 3.3V Dual FIFO 4,096 x 9 ⎯ 3.3V Dual FIFO 8,192 x 9 ⎯ 3.3V Dual FIFO Access Time (tA) Speed in Nanoseconds 3966 drw 21 NOTE: 1. Green parts are available. For specific speeds contact your local sales office. LEAD FINISH (SnPb) parts are in EOL process. Product Discontinuation Notice - PDN# SP-17-02 DATASHEET DOCUMENT HISTORY 07/17/2006 02/05/2009 06/13/2011 06/29/2012 12/11/2017 pgs. 1 and 12. pg. 12. pgs. 1, 2, 3 and 12. pgs. 1 Product Discontinuation Notice - PDN# SP-17-02 Last time buy expires June 15, 2018. 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