840N051BGILF

FemtoClock® NG Crystal-to-LVCMOS/LVTTL Clock Synthesizer ICS840N051I DATASHEET General Description Features The ICS840N051I is a LVCMOS/LVTTL clock synthesizer designed for SDH/SONET and Ethernet applications. The device generates a selectable 155.52MHz or 77.76MHz clock signal with excellent phase jitter performance. The device uses IDT’s fourth generation FemtoClock® NG technology for an optimum of high clock frequency, low phase noise performance and low power consumption.The device supports 2.5V or 3.3V voltage supply and is packaged in a small, lead-free (RoHS 6) 8-lead TSSOP package. The extended temperature range supports wireless infrastructure, telecommunication and networking end equipment requirements. • • Fourth generation FemtoClock® NG technology • • • One 2.5V or 3.3V LVCMOS/LVTTL clock output • RMS phase jitter @ 156.25MHz, using a 19.53125MHz crystal (1.875MHz - 20MHz): 0.138ps (maximum) • • • • LVCMOS interface levels for the control inputs 155.52MHz output clock synthesized from a 19.44MHz fundamental mode crystal Crystal interface designed for a 12pF parallel resonant crystal RMS phase jitter @ 155.52MHz, using a 19.44MHz crystal (12kHz - 20MHz): 0.482ps (maximum) Full 2.5V or 3.3V supply voltage Lead-free (RoHS 6) packaging -40°C to 85°C ambient operating temperature OE Function Table Input OE Output Enable 0 Output Q is disabled in high-impedance state 1 (default) Output Q is enabled. NOTE: OE is an asynchronous control FREQ_SEL Frequency Table Input Output Frequency FREQ_SEL fXTAL = 19.2MHz fXTAL = 19.44MHz fXTAL = 19.53125MHz 0 (default) 153.6MHz 155.52MHz 156.25MHz 1 76.8MHz 77.76MHz 78.125MHz NOTE: FREQ_SEL is an asynchronous control. Block Diagram XTAL_IN OSC XTAL_OUT Pin Assignment PFD & LPF FemtoClock® NG VCO 490-637.5MHz ÷4, ÷8 Pulldown Pullup ICS840N051BGI REVISION A OCTOBER 14, 2013 VDDA OE XTAL_OUT XTAL_IN 1 2 3 4 8 7 6 5 VDD Q GND FREQ_SEL ICS840N051I 8-lead TSSOP 4.40mm x 3.0mm x 0.925mm package body G Package Top View ÷32 FREQ_SEL OE Q 1 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Pin Descriptions and Characteristics Table 1. Pin Descriptions Number Name Type 1 VDDA Power Description Analog power supply. 2 OE Input 3, 4 XTAL_OUT, XTAL_IN Pullup Output enable pin. LVCMOS interface levels. Input 5 FREQ_SEL Input 6 GND Power Power supply ground. 7 Q Output Single-ended clock output. LVCMOS/LVTTL interface levels. 8 VDD Power Core supply pin. Crystal oscillator interface. XTAL_IN is the input, XTAL_OUT is the output. Pulldown Frequency select pin. LVCMOS interface levels. NOTE: Pulldown and Pullup refer to internal input resistors. See Table 2, Pin Characteristics, for typical values. Table 2. Pin Characteristics Symbol Parameter Test Conditions CIN Input Capacitance OE, FREQ_SEL 3.5 pF Power Dissipation Capacitance VDD = 3.465V 11 pF CPD VDD = 2.625V 9 pF RPullup Input Pullup Resistor 51 k RPulldown Input Pulldown Resistor 51 k  Output Impedance VDD = 3.3V 15 ROUT VDD = 2.5V 19  ICS840N051BGI REVISION A OCTOBER 14, 2013 2 Minimum Typical Maximum Units ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Absolute Maximum Ratings NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Rating Supply Voltage, VDD 3.63V Inputs, VI XTAL_IN Other Inputs 0V to 2V -0.5V to VDD + 0.5V Outputs, VO -0.5V to VDD + 0.5V Package Thermal Impedance, JA 117°C/W (0 mps) Storage Temperature, TSTG -65C to 150C DC Electrical Characteristics Table 3A. Power Supply DC Characteristics, VDD = 3.3V±5% or 2.5V±5%, TA = -40°C to 85°C Symbol Parameter Test Conditions Minimum Typical Maximum Units VDD Core Supply Voltage 2.375 3.3 3.465 V VDDA Analog Supply Voltage VDD – 0.18 3.3 VDD V VDDA Analog Supply Voltage VDD – 0.18 2.5 VDD V IDDA Analog Supply Current 18 mA IDD Power Supply Current 67 mA Maximum Units Table 3B. LVCMOS/LVTTL DC Characteristics, VDD = 3.3V±5% or 2.5V±5%, TA = -40°C to 85°C Symbol Parameter VIH Input High Voltage VIL Input Low Voltage Test Conditions Minimum Typical VDD = 3.3V 2 VDD + 0.3 V VDD = 2.5V 1.7 VDD + 0.3 V FREQ_SEL VDD = 3.3V -0.3 0.5 V OE VDD = 3.3V -0.3 0.8 V FREQ_SEL VDD = 2.5V -0.3 0.5 V OE VDD = 2.5V -0.3 0.7 V FREQ_SEL VDD = VIN = 3.465V or 2.625V 150 µA OE VDD = VIN = 3.465V or 2.625V 5 µA IIH Input High Current IIL Input Low Current VOH Output High Voltage; NOTE 1 Q VOL Output Low Voltage; NOTE 1 Q FREQ_SEL VDD = 3.465V or 2.625V, VIN = 0V -5 µA OE VDD = 3.465V or 2.625V, VIN = 0V -150 µA VDD = 3.465V 2.6 V VDD = 2.625V 1.8 V VDD = 3.465V or 2.625V 0.5 V NOTE 1: Output terminated with 50 to VDD / 2. See Parameter Measurement Information Section, LVCMOS Output Load Test Circuit Diagrams. ICS840N051BGI REVISION A OCTOBER 14, 2013 3 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Table 4. Crystal Characteristics Parameter Test Conditions Minimum Maximum Units 19.92 MHz Equivalent Series Resistance (ESR) 80  Shunt Capacitance 7 pF Mode of Oscillation Typical Fundamental Frequency 15.31 Capacitive Load (CL) 19.44 12 pF AC Characteristics Table 5. AC Characteristics, VDD = VDDA = 3.3V±5% or 2.5V±5%, TA = -40°C to 85°C Symbol Parameter fOUT Output Frequency tjit(Ø) N Test Conditions Minimum Typical Maximum FREQ_SEL = 0 122.5 155.52 159.38 MHz FREQ_SEL = 1 61.25 77.76 79.69 MHz fOUT = 155.52MHz, Integration Range: 12kHz – 20MHz, 19.44MHz crystal 0.350 0.482 ps fOUT = 77.76MHz, Integration Range: 12kHz – 20MHz, 19.44MHz crystal 0.354 0.508 ps fOUT = 156.25MHz, Integration Range: 1.875MHz – 20MHz, 19.353125MHz crystal 0.101 0.138 ps RMS Phase Jitter (Random); NOTE 1 Single-Side Band Noise Power tR / t F Output Rise/Fall Time odc Output Duty Cycle Units fOUT = 156.25MHz, Offset: 10Hz -43.6 dBc/Hz fOUT = 156.25MHz, Offset: 100Hz -74.1 dBc/Hz fOUT = 156.25MHz, Offset: 1kHz -107.3 dBc/Hz fOUT = 156.25MHz, Offset: 10kHz -124.4 dBc/Hz fOUT = 156.25MHz, Offset: 100kHz -128.9 dBc/Hz fOUT = 156.25MHz, Offset: 1MHz -139.1 dBc/Hz fOUT = 156.25MHz, Offset: 10MHz -156.7 dBc/Hz 20% to 80% 200 600 ps 48 52 % NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE: Characterized with 19.2MHz, 19.44MHz and 19.53125MHz crystals. NOTE 1: Please refer to the phase noise plots. ICS840N051BGI REVISION A OCTOBER 14, 2013 4 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Noise Power(dBc/Hz) Typical Phase Noise at 77.76MHz Offset Frequency (Hz) Noise Power(dBc/Hz) Typical Phase Noise at 155.52MHz Offset Frequency (Hz) ICS840N051BGI REVISION A OCTOBER 14, 2013 5 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Noise Power(dBc/Hz) Typical Phase Noise at 156.25MHz Offset Frequency (Hz) ICS840N051BGI REVISION A OCTOBER 14, 2013 6 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Parameter Measurement Information 1.25V ± 5% 1.65V ± 5% 1.25V ± 5% 1.65V ± 5% SCOPE VDD SCOPE VDD Qx VDDA Qx VDDA GND GND -1.25V ± 5% -1.65V ± 5% 3.3V LVCMOS/LVTTL Output Load AC Test Circuit 2.5V LVCMOS/LVTTL Output Load AC Test Circuit 80% 80% 20% 20% Q tR tF Output Rise/Fall Time RMS Phase Jitter V DD 2 Q t PW t odc = PERIOD t PW x 100% t PERIOD Output Duty Cycle/Pulse Width/Period ICS840N051BGI REVISION A OCTOBER 14, 2013 7 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Applications Information Overdriving the XTAL Interface The XTAL_IN input can be overdriven by an LVCMOS driver or by one side of a differential driver through an AC coupling capacitor. The XTAL_OUT pin can be left floating. The amplitude of the input signal should be between 500mV and 1.8V and the slew rate should not be less than 0.2V/nS. For 3.3V LVCMOS inputs, the amplitude must be reduced from full swing to at least half the swing in order to prevent signal interference with the power rail and to reduce internal noise. Figure 1A shows an example of the interface diagram for a high speed 3.3V LVCMOS driver. This configuration requires that the sum of the output impedance of the driver (Ro) and the series resistance (Rs) equals the transmission line impedance. In addition, matched termination at the crystal input will attenuate the signal in half. This VCC can be done in one of two ways. First, R1 and R2 in parallel should equal the transmission line impedance. For most 50 applications, R1 and R2 can be 100. This can also be accomplished by removing R1 and changing R2 to 50. The values of the resistors can be increased to reduce the loading for a slower and weaker LVCMOS driver. Figure 1B shows an example of the interface diagram for an LVPECL driver. This is a standard LVPECL termination with one side of the driver feeding the XTAL_IN input. It is recommended that all components in the schematics be placed in the layout. Though some components might not be used, they can be utilized for debugging purposes. The datasheet specifications are characterized and guaranteed by using a quartz crystal as the input. XTAL_OUT R1 100 Ro Rs C1 Zo = 50 ohms XTAL_IN R2 100 Zo = Ro + Rs .1uf LVCMOS Driver Figure 1A. General Diagram for LVCMOS Driver to XTAL Input Interface XTAL_OUT C2 Zo = 50 ohms XTAL_IN .1uf Zo = 50 ohms LVPECL Driver R1 50 R2 50 R3 50 Figure 1B. General Diagram for LVPECL Driver to XTAL Input Interface ICS840N051BGI REVISION A OCTOBER 14, 2013 8 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Schematic Layout Figure 2 shows an example ICS840N051I application schematic in which the device is operated at VDD = VDDA = 3.3V. The schematic example focuses on functional connections and is intended as an example only and may not represent the exact user configuration. Refer to the pin description and functional tables in the datasheet to ensure the logic control inputs are properly set. For example OE and FREQ_SEL can be configured from an FPGA instead of set with pull up and pull down resistors as shown. as close to the power pins as possible. If space is limited, the 0.1µF capacitor on the VDD pin must be placed on the device side with direct return to the ground plane though vias. The remaining filter components can be on the opposite side of the PCB. Power supply filter recommendations are a general guideline to be used for reducing external noise from coupling into the devices. The filter performance is designed for wide range of noise frequencies. This low-pass filter starts to attenuate noise at approximately 10kHz. If a specific frequency noise component is known, such as switching power supply frequencies, it is recommended that component values be adjusted and if required, additional filtering be added. Additionally, good general design practices for power plane voltage stability suggests adding bulk capacitances in the local area of all devices. As with any high speed analog circuitry, the power supply pins are vulnerable to random noise, so to achieve optimum jitter performance isolation of the VDD pin from power supply is required. In order to achieve the best possible filtering, it is recommended that the placement of the filter components be on the device side of the PCB Logic Control Input Examples Set Logic Input to '1' VDD Set Logic Input to '0' VDD 3. 3V 2 VDD RU1 1K R U2 N ot Install To Logic Input pins C4 10uF To Logic Input pins RD1 Not I nstall FB1 1 BLM18BB221SN1 C5 0.1uF R1 10 VDDA R D2 1K C6 10uF VDD VDD A VDD OE 2 F REQ_SEL 5 1 U1 C7 0. 1uF VDD A 8 C3 0.1uF OE FREQ_SEL Q 3 XTAL_OUT X1 C1 5pF C2 5pF Z o = 50 Ohm 33 XTAL_IN GND 19.44MHz ( 12pf ) R3 7 LVCMOS Receiver 6 4 Pl ace 0 .1uF byp ass ca ps di rect ly ad jacen t to the re spect ive VDD and VD DA pi ns. Figure 2. ICS840N051I Application Schematic ICS840N051BGI REVISION A OCTOBER 14, 2013 9 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Power Considerations This section provides information on power dissipation and junction temperature for the ICS840N051I. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the ICS840N051I is the sum of the core power plus the analog power plus the power dissipated into the load. The following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results. • Power (core)MAX = VDD_MAX * (IDD + IDDA) = 3.465V *(67mA + 18mA) = 294.53mW • Output Impedance ROUT Current due to Loading 50 to VDD/2 Output Current IOUT = VDD_MAX / [2 * (50 + ROUT)] = 3.465V / [2 * (50 + 15)] = 26.7mA • Power Dissipation on the ROUT per LVCMOS output Power (ROUT) = ROUT * (IOUT)2 = 15 * (26.7mA)2 = 10.7mW per output • Total Power (ROUT) = 10.7mW * 1 = 10.7mW Dynamic Power Dissipation at 156.25MHz Power (156.25MHz) = CPD * Frequency * (VDD)2 = 11pF * 156.25MHz * (3.465V)2 = 20.64mW per output Total Power (156.25MHz) = 20.64mW * 1 = 20.64mW Total Power Dissipation • Total Power = Power (core)MAX + Power (ROUT) + Power (156.25MHz) = 294.53mW + 10.7mW + 20.64mW = 325.87mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond wire and bond pad temperature remains below 125°C. The equation for Tj is as follows: Tj = JA * Pd_total + TA Tj = Junction Temperature JA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) TA = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance qJA must be used. Assuming no air flow and a multi-layer board, the appropriate value is 117°C/W per Table 6 below. Therefore, Tj for an ambient temperature of 85°C with all outputs switching is: 85°C + 0.326W *117°C/W = 123.2°C. This is below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of board (multi-layer). Table 6. Thermal Resistance JA for 8 Lead TSSOP, Forced Convection JA by Velocity Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards ICS840N051BGI REVISION A OCTOBER 14, 2013 0 117°C/W 10 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Reliability Information Table 7. JA vs. Air Flow Table for a 8-lead TSSOP JA vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 117°C/W Transistor Count The transistor count for ICS840N051I is: 24,811 Package Outline and Package Dimensions Package Outline - G Suffix for 8 Lead TSSOP Table 8. Package Dimensions Symbol N A A1 A2 b c D E E1 e L  aaa All Dimensions in Millimeters Minimum Maximum 8 1.20 0.5 0.15 0.80 1.05 0.19 0.30 0.09 0.20 2.90 3.10 6.40 Basic 4.30 4.50 0.65 Basic 0.45 0.75 0° 8° 0.10 Reference Document: JEDEC Publication 95, MO-153 ICS840N051BGI REVISION A OCTOBER 14, 2013 11 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Ordering Information Table 9. Ordering Information Part/Order Number Marking Package Shipping Packaging Temperature 840N051BGILF 51BIL Lead-Free, 8-lead TSSOP Tube -40C to 85C 840N051BGILFT 51BIL Lead-Free, 8-lead TSSOP Tape & Reel -40C to 85C ICS840N051BGI REVISION A OCTOBER 14, 2013 12 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER Revision History Sheet Rev A Table Page 1 Description of Change Date General Description - corrected output frequency of 156.25MHz to 155.52MHz in second sentence. ICS840N051BGI REVISION A OCTOBER 14, 2013 13 10/14/2013 ©2013 Integrated Device Technology, Inc. ICS840N051I Data Sheet FEMTOCLOCK® NG CRYSTAL-TO-LVCMOS/LVTTL CLOCK SYNTHESIZER We’ve Got Your Timing Solution 6024 Silver Creek Valley Road San Jose, California 95138 Sales 800-345-7015 (inside USA) +408-284-8200 (outside USA) Fax: 408-284-2775 www.IDT.com/go/contactIDT Technical Support Sales netcom@idt.com +480-763-2056 DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion. All information in this document, including descriptions of product features and performance, is subject to change without notice. Performance specifications and the operating parameters of the described products are determined in the independent state and are not guaranteed to perform the same way when installed in customer products. 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