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844003BG-01LFT

844003BG-01LFT

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    TSSOP-24

  • 描述:

    IC SYNTHESIZER 3LVDS 24-ETSSOP

  • 数据手册
  • 价格&库存
844003BG-01LFT 数据手册
FemtoClocks™ Crystal-TO-LVDS Frequency Synthesizer 844003-01 DATA SHEET General Description Features The 844003-01 is a 3 differential output LVDS Synthesizer designed to generate Ethernet refer- ence clock frequencies. Using a 19.53125MHz or 25MHz, 18pF parallel resonant crystal, the following frequencies can be generated based on the settings of 4 frequency select pins (DIV_SELA[1:0], DIV_SELB[1:0]): 625MHz, 312.5MHz, 156.25MHz, and 125MHz. The 844003-01 has 2 output banks, Bank A with 1 differential LVDS output pair and Bank B with 2 differential LVDS output pairs. • Three differential LVDS output pairs on two banks, Bank A with one LVDS pair and Bank B with two LVDS output pairs • Using a 19.53125MHz or 25MHz crystal, the two output banks can be independently set for 625MHz, 312.5MHz, 156.25MHz or 125MHz • Selectable crystal oscillator interface or LVCMOS/LVTTL single-ended input • • VCO range: 490MHz - 680MHz • • • Full 3.3V supply mode 0°C to 70°C ambient operating temperature The two banks have their own dedicated frequency select pins and can be independently set for the frequencies mentioned above. The 844003-01 uses IDT’s 3rd generation low phase noise VCO technology and can achieve 1ps or lower typical rms phase jitter, easily meeting Ethernet jitter requirements. The 844003-01 is packaged in a small 24-pin TSSOP package. RMS phase jitter @ 156.25MHz (1.875MHz – 20MHz): 0.56ps (typical) Available in lead-free (RoHS 6) package Pin Assignment 844003-01 24-Lead TSSOP, E-Pad 4.40mm x 7.8mm x 0.925mm package body G Package Top View Block Diagram 844003-01 Rev A 06/10/15 1 ©2015 Integrated Device Technology, Inc. 844003-01 DATA SHEET Table 1. Pin Descriptions Number Name 1, 24 DIV_SELB0, DIV_SELB1 2 VCO_SEL Type Input Input Description Pullup Division select pin for Bank B. Default = HIGH. LVCMOS/LVTTL interface levels. See Table 3B. Pullup VCO select pin. When Low, the PLL is bypassed and the crystal reference or REF_CLK (depending on XTAL_SEL setting) are passed directly to the output dividers. Has an internal pullup resistor so the PLL is not bypassed by default. LVCMOS/LVTTL interface levels. Pulldown Active HIGH Master Reset. When logic HIGH, the internal dividers are reset causing the true outputs Qx to go low and the inverted outputs nQx to go high. When logic LOW, the internal dividers and the outputs are enabled. Has an internal pulldown resistor so the power-up default state of outputs and dividers are enabled. LVCMOS/LVTTL interface levels. 3 MR Input 4 VDDO_A Power Output supply pin for Bank A outputs. 5, 6 QA0, nQA0 Output Differential output pair. LVDS interface levels. 7 OEB Input Pullup Output enable Bank B. Active High outputs are enable. When logic HIGH, the output pairs on Bank B are enabled. When logic LOW, the output pairs are in a high impedance state. Has an internal pullup resistor so the default power-up state of outputs are enabled. LVCMOS/LVTTL interface levels. See Table 3E. 8 OEA Input Pullup Output enable Bank A. Active High output enable. When logic HIGH, the output pair in Bank A is enabled. When logic LOW, the output pair is in a high impedance state. Has an internal pullup resistor so the default power-up state of output is enabled. LVCMOS/LVTTL interface levels. See Table 3D. 9 FB_DIV Input Pulldown Feedback divide select. When Low (default), the feedback divider is set for ÷25. When HIGH, the feedback divider is set for ÷32. See Table 3C. LVCMOS/LVTTL interface levels. 10 VDDA Power Analog supply pin. 11 VDD Power Core supply pin. 12, 13 DIV_SELA0, DIV_SELA1 Input 14 GND Power Power supply ground. 15, 16 XTAL_OUT, XTAL_IN Input Parallel resonant crystal interface. XTAL_OUT is the output, XTAL_IN is the input. XTAL_IN is also the overdrive pin if you want to overdrive the crystal circuit with a single-ended reference clock. 17 REF_CLK Input Pulldown Single-ended reference clock input. Has an internal pulldown resistor to pull to low state by default. Can leave floating if using the crystal interface. LVCMOS/LVTTL interface levels. 18 XTAL_SEL Input Pullup Crystal select pin. Selects between the single-ended REF_CLK or crystal interface. Has an internal pullup resistor so the crystal interface is selected by default. LVCMOS/LVTTL interface levels. 19, 20 nQB1, QB1 Output 21, 22 nQB0, QB0 Output Differential output pair. LVDS interface levels. 23 VDDO_B Power Output supply pin for Bank B outputs. Pullup Division select pin for Bank A. Default = HIGH. See Table 3A. LVCMOS/LVTTL interface levels. Differential output pair. LVDS interface levels. NOTE: Pullup and Pulldown refer to internal input resistors. See Table 2, Pin Characteristics, for typical values. FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 2 Rev A 06/10/15 844003-01 DATA SHEET Table 2. Pin Characteristics Symbol Parameter Test Conditions Minimum Typical Maximum Units CIN Input Capacitance 4 pF RPULLUP Input Pullup Resistor 51 k RPULLDOWN Input Pulldown Resistor 51 k Function Tables Table 3A. Output Bank A Configuration Select Function Table Inputs Table 3B. Output Bank B Configuration Select Function Table Outputs Inputs Outputs DIV_SELA1 DIV_SELA0 QA0/ nQA0 DIV_SELB1 DIV_SELB0 QB[0:1]/ nQB[0:1] 0 0 ÷1 0 0 ÷2 0 1 ÷2 0 1 ÷4 1 0 ÷3 1 0 ÷5 1 1 ÷4 (default) 1 1 ÷8 (default) Table 3C. Feedback Divider Configuration Select Function Table Table 3D. OEA Select Function Table Input FB_DIV Feedback Divide 0 ÷25 (default) 1 ÷32 Input Outputs OEA QA0/ nQA0 0 High Impedance 1 Active (default) Table 3E. OEB Select Function Table Input Outputs OEB QB[0:1]/ nQB[0:1] 0 High Impedance 1 Active (default) FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 3 Rev A 06/10/15 844003-01 DATA SHEET Table 3F. Bank A Frequency Table Inputs Feedback Divider Bank A Output Divider M/N Multiplication Factor QA0/ nQA0 Output Frequency (MHz) Crystal Frequency (MHz) FB_DIV DIV_SELA1 DIV_SELA0 25 0 0 0 25 1 25 625 25 0 0 1 25 2 12.5 312.5 20 0 0 1 25 2 12.5 250 22.5 0 1 0 25 3 8.333 187.5 25 0 1 1 25 4 6.25 156.25 24 0 1 1 25 4 6.25 150 20 0 1 1 25 4 6.25 125 19.44 1 0 0 32 1 32 622.08 19.44 1 0 1 32 2 16 311.04 15.625 1 0 1 32 2 16 250 18.75 1 1 0 32 3 10.667 200 19.44 1 1 1 32 4 8 155.52 18.75 1 1 1 32 4 8 150 15.625 1 1 1 32 4 8 125 Rev A 06/10/15 4 FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 844003-01 DATA SHEET Table 3G. Bank B Frequency Table Inputs Feedback Divider Bank B Output Divider M/N Multiplication Factor QBx/ nQBx Output Frequency (MHz) Crystal Frequency (MHz) FB_DIV DIV_SELB1 DIV_SELB0 25 0 0 0 25 2 12.5 312.5 20 0 0 0 25 2 12.5 250 25 0 0 1 25 4 6.25 156.25 24 0 0 1 25 4 6.25 150 20 0 0 1 25 4 6.25 125 25 0 1 0 25 5 5 125 25 0 1 1 25 8 3.125 78.125 24 0 1 1 25 8 3.125 75 20 0 1 1 25 8 3.125 62.5 19.44 1 0 0 32 2 16 311.04 15.625 1 0 0 32 2 16 250 19.44 1 0 1 32 4 8 155.52 18.75 1 0 1 32 4 8 150 15.625 1 0 1 32 4 8 125 15.625 1 1 0 32 5 6.4 100 19.44 1 1 1 32 8 4 77.76 18.75 1 1 1 32 8 4 75 15.625 1 1 1 32 8 4 62.5 FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 5 Rev A 06/10/15 844003-01 DATA SHEET Absolute Maximum Ratings NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Rating Supply Voltage, VDD 4.6V Inputs, VI -0.5V to VDD + 0.5V Outputs, IO Continuos Current Surge Current 10mA 15mA Package Thermal Impedance, JA 32.1C/W (0 mps) Storage Temperature, TSTG -65C to 150C DC Electrical Characteristics Table 4A. Power Supply DC Characteristics, VDD = VDDA = VDDO_A = VDDO_B = 3.3V ± 5%, TA = 0°C to 70°C Symbol Parameter VDD VDDA Test Conditions Minimum Typical Maximum Units Positive Supply Voltage 3.135 3.3 3.465 V Analog Supply Voltage 3.135 3.3 3.465 V VDDO_A, VDDO_B Output Supply Voltage 3.135 3.3 3.465 V IDD Power Supply Current 135 mA IDDA Analog Supply Current 12 mA IDDO_A + IDDO_B Output Supply Current 80 mA Table 4B. LVCMOS/LVTTL DC Characteristics, VDD = VDDA = VDDO_A = VDDO_B = 3.3V ± 5%, TA = 0°C to 70°C Symbol Parameter VIH Input High Voltage VIL Input Low Voltage IIH Input High Current IIL Input Low Current Test Conditions Minimum Typical Maximum Units 2 VDD + 0.3 V -0.3 0.8 V REF_CLK, MR, FB_DIV VDD = VIN = 3.465V 150 µA DIV_SELA[0:1], OEA, OEB, DIV_SELB[0:1], VCO_SEL, XTAL_SEL VDD = VIN = 3.465V 5 µA REF_CLK, MR, FB_DIV VDD = 3.465V, VIN = 0V -5 µA DIV_SELA[0:1], OEA, OEB, DIV_SELB[0:1], VCO_SEL, XTAL_SEL VDD = 3.465V, VIN = 0V -150 µA Table 4C. LVDS DC Characteristics, VDD = VDDA = VDDO_A = VDDO_B = 3.3V ± 5%, TA = 0°C to 70°C Symbol Parameter VOD Differential Output Voltage Rev A 06/10/15 Test Conditions Minimum 250 6 Typical Maximum Units 450 mV FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 844003-01 DATA SHEET Symbol Parameter VOD VOD Magnitude Change VOS Offset Voltage VOS VOS Magnitude Change Test Conditions Minimum 1.25 Typical 1.33 Maximum Units 50 mV 1.41 V 50 mV Table 5. Crystal Characteristics Parameter Test Conditions Minimum Mode of Oscillation Typical Maximum Units Fundamental FB_DIV = ÷25 19.6 27.2 MHz FB_DIV = ÷32 15.313 21.25 MHz Equivalent Series Resistance (ESR) 50  Shunt Capacitance 7 pF Drive Level 1 mW Frequency FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 7 Rev A 06/10/15 844003-01 DATA SHEET AC Electrical Characteristics Table 6. AC Characteristics, VDD = VDDA = VDDO_A = VDDO_B = 3.3V ± 5%, TA = 0°C to 70°C Parameter fOUT Symbol Output Frequency Range tsk(b) Bank Skew; NOTE 1 tsk(o) Output Skew tjit(Ø) NOTE 2, 3 NOTE 2, 3, 4 RMS Phase Jitter (Random); NOTE 5 tR / tF Output Rise/Fall Time odc Output Duty Cycle Test Conditions Minimum Maximum Units Output Divider = ÷1 490 Typical 680 MHz Output Divider = ÷2 245 340 MHz Output Divider = ÷3 163.33 226.67 MHz Output Divider = ÷4 122.5 170 MHz Output Divider = ÷5 98 136 MHz Output Divider = ÷8 61.25 85 MHz 33 ps Outputs @ Same Frequency 75 ps Outputs @ Different Frequencies 170 ps 625MHz (1.875MHz – 20MHz) 0.53 ps 312.5MHz (1.875MHz – 20MHz): 0.53 ps 156.25MHz (1.875MHz – 20MHz) 0.56 ps 125MHz (1.875MHz – 20MHz) 0.58 ps 20% to 80% 200 450 ps Output Divider  ÷1 47 53 % Output Divider = ÷1 43 57 % NOTE 1: Defined as skew within a bank of outputs at the same voltages and with equal load conditions. NOTE 2: Defined as skew between outputs at the same supply voltages and with equal load conditions. Measured at the output differential cross points. NOTE 3: This parameter is defined in accordance with JEDEC Standard 65. NOTE 4: Characterized using output dividers 1, 2, 4, 8. NOTE 5: Refer to the Phase Noise Plots. Rev A 06/10/15 8 FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 844003-01 DATA SHEET Typical Phase Noise at 156.25MHz ➝ 156.25MHz RMS Phase Jitter (Random) -20 1.875MHz to 20MHz = 0.56ps (typical) -30 -40 -50 -60 10Gb Ethernet Filter -70 -80 -90 -100 -110 ➝ Noise Power dBc Hz 0 -10 -120 -130 Raw Phase Noise Data ➝ -140 -150 -160 -170 -180 Phase Noise Result by adding a 10Gb Ethernet filter to raw data -190 100 1k 10k 100k 1M 10M Offset Frequency (Hz) Typical Phase Noise at 625MHz -20 -30 -40 ➝ 0 -10 625MHz RMS Phase Jitter (Random) 1.875MHz to 20MHz = 0.53ps (typical) 10Gb Ethernet Filter -50 -70 -80 ➝ Noise Power dBc Hz -60 -90 -100 Raw Phase Noise Data -110 -120 -130 ➝ -140 -150 -160 Phase Noise Result by adding a 10Gb Ethernet filter to raw data -170 -180 -190 100 1k 10k 100k 1M 10M Offset Frequency (Hz) FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 9 Rev A 06/10/15 844003-01 DATA SHEET Parameter Measurement Information Noise Power Phase Noise Plot VDD, VDDA, VDDO_A, VDDO_B Phase Noise Mask GND f1 Offset Frequency f2 RMS Jitter = Area Under the Masked Phase Noise Plot 3.3V LVDS Output Load AC Test Circuit RMS Phase Jitter nQx nQB0 Qx QB0 nQy nQB1 Qy QB1 tsk(b) Output Skew Bank Skew nQA0, nQB0, nQB1 nQA0, nQB0, nQB1 QA0, QB0, QB1 80% 80% QA0, QB0, QB1 VOD 20% 20% tR Output Duty Cycle/Pulse Width/Period Rev A 06/10/15 tF Output Rise/Fall Time 10 FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 844003-01 DATA SHEET Parameter Measurement Information, continued Offset Voltage Setup Differential Output Voltage Setup Application Information Power Supply Filtering Technique As in any high speed analog circuitry, the power supply pins are vulnerable to random noise. To achieve optimum jitter perform- ance, power supply isolation is required. The 844003-01 provides separate power supplies to isolate any high switching noise from the outputs to the internal PLL. VDD, VDDA, VDDO_A and VDDO_B should be individually connected to the power supply plane through vias, and 0.01µF bypass capacitors should be used for each pin. Figure 1 illustrates this for a generic VDD pin and also shows that VDDA requires that an additional 10 resistor along with a 10F bypass capacitor be connected to the VDDA pin. FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 3.3V VDD .01µF 10Ω .01µF 10µF VDDA Figure 1. Power Supply Filtering 11 Rev A 06/10/15 844003-01 DATA SHEET Crystal Input Interface The 844003-01 has been characterized with 18pF parallel resonant crystals. The capacitor values shown in Figure 2 below were determined using a 19.53125MHz or 25MHz, 18pF parallel resonant crystal and were chosen to minimize the ppm error. XTAL_IN C1 22pF X1 18pF Parallel Crystal XTAL_OUT C2 22pF Figure 2. Crystal Input Interface LVCMOS to XTAL Interface The XTAL_IN input can accept a single-ended LVCMOS signal through an AC coupling capacitor. A general interface diagram is shown in Figure 3. The XTAL_OUT pin can be left floating. The input edge rate can be as slow as 10ns. For LVCMOS signals, it is recommended that the amplitude be reduced from full swing to half swing in order to prevent signal interference with the power rail and to reduce noise. This configuration requires that the output VDD impedance of the driver (Ro) plus the series resistance (Rs) equals the transmission line impedance. In addition, matched termination at the crystal input will attenuate the signal in half. This can be done in one of two ways. First, R1 and R2 in parallel should equal the transmission line impedance. For most 50 applications, R1 and R2 can be 100. This can also be accomplished by removing R1 and making R2 50. VDD R1 Ro Rs 0.1µf 50Ω XTAL_IN Zo = Ro + Rs R2 XTAL_OUT Figure 3. General Diagram for LVCMOS Driver to XTAL Input Interface Rev A 06/10/15 12 FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 844003-01 DATA SHEET Recommendations for Unused Input and Output Pins Inputs: Outputs: Crystal Inputs LVDS Outputs For applications not requiring the use of the crystal oscillator input, both XTAL_IN and XTAL_OUT can be left floating. Though not required, but for additional protection, a 1k resistor can be tied from XTAL_IN to ground. All unused LVDS output pairs can be either left floating or terminated with 100 across. If they are left floating, we recommend that there is no trace attached. REF_CLK Input For applications not requiring the use of the reference clock, it can be left floating. Though not required, but for additional protection, a 1k resistor can be tied from the REF_CLK to ground. LVCMOS Control Pins All control pins have internal pullups or pulldowns; additional resistance is not required but can be added for additional protection. A 1k resistor can be used. 3.3V LVDS Driver Termination A general LVDS interface is shown in Figure 4 In a 100 differential transmission line environment, LVDS drivers require a matched load termination of 100 across near the receiver input. For a multiple LVDS outputs buffer, if only partial outputs are used, it is recommended to terminate the unused outputs. 3.3V 50Ω 3.3V LVDS Driver + R1 100Ω – 50Ω 100Ω Differential Transmission Line Figure 4. Typical LVDS Driver Termination FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 13 Rev A 06/10/15 844003-01 DATA SHEET EPAD Thermal Release Path In order to maximize both the removal of heat from the package and the electrical performance, a land pattern must be incorporated on the Printed Circuit Board (PCB) within the footprint of the package corresponding to the exposed metal pad or exposed heat slug on the package, as shown in Figure 5. The solderable area on the PCB, as defined by the solder mask, should be at least the same size/shape as the exposed pad/slug area on the package to maximize the thermal/electrical performance. Sufficient clearance should be designed on the PCB between the outer edges of the land pattern and the inner edges of pad pattern for the leads to avoid any shorts. and dependent upon the package power dissipation as well as electrical conductivity requirements. Thus, thermal and electrical analysis and/or testing are recommended to determine the minimum number needed. Maximum thermal and electrical performance is achieved when an array of vias is incorporated in the land pattern. It is recommended to use as many vias connected to ground as possible. It is also recommended that the via diameter should be 12 to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is desirable to avoid any solder wicking inside the via during the soldering process which may result in voids in solder between the exposed pad/slug and the thermal land. Precautions should be taken to eliminate any solder voids between the exposed heat slug and the land pattern. Note: These recommendations are to be used as a guideline only. For further information, refer to the Application Note on the Surface Mount Assembly of Amkor’s Thermally/Electrically Enhance Leadfame Base Package, Amkor Technology. While the land pattern on the PCB provides a means of heat transfer and electrical grounding from the package to the board through a solder joint, thermal vias are necessary to effectively conduct from the surface of the PCB to the ground plane(s). The land pattern must be connected to ground through these vias. The vias act as “heat pipes”. The number of vias (i.e. “heat pipes”) are application specific SOLDER PIN PIN PAD EXPOSED HEAT SLUG GROUND PLANE THERMAL VIA SOLDER PIN LAND PATTERN (GROUND PAD) SOLDER PIN PAD Figure 5. Assembly for Exposed Pad Thermal Release Path - Side View (drawing not to scale) Rev A 06/10/15 14 FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 844003-01 DATA SHEET Power Considerations This section provides information on power dissipation and junction temperature for the 844003-01. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the 844003-01 is the sum of the core power plus the analog power plus the power dissipated in the load(s). The following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results. NOTE: Please refer to Section 3 for details on calculating power dissipated in the load. • Power (core)MAX = VDD_MAX * (IDD_MAX + IDDA_MAX) = 3.465V * (135mA + 12mA) = 509.36mW • Power (outputs)MAX = VDDO_MAX * IDDO_MAX = 3.465V * 80mA = 277.20mW Total Power_MAX = 509.36mW + 277.20mW = 786.56mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad and directly affects the reliability of the device. The maximum recommended junction temperature for HiPerClockS devices is 125°C. The equation for Tj is as follows: Tj = JA * Pd_total + TA Tj = Junction Temperature JA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) TA = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and a multi-layer board, the appropriate value is 32.1°C/W per Table 7 below. Therefore, Tj for an ambient temperature of 70°C with all outputs switching is: 70°C + 0.787W * 32.1°C/W = 95.3°C. This is below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of board. Table 7. Thermal Resistance JA for 24 Lead TSSOP, E-Pad, Forced Convection JA by Velocity Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 0 1 2 32.1°C/W 35.5°C/W 26.9°C/W 15 Rev A 06/10/15 844003-01 DATA SHEET Reliability Information Table 8. JA vs. Air Flow Table for a 24 Lead TSSOP, E-Pad JA by Velocity Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 1 2 32.1°C/W 35.5°C/W 26.9°C/W Transistor Count The transistor count for 844003-01 is: 3537 Rev A 06/10/15 16 FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 844003-01 DATA SHEET Package Outline and Package Dimensions Package Outline - G Suffix for 24 Lead TSSOP, E-Pad Table 9. Package Dimensions Symbol N A A1 A2 b b1 c c1 D E E1 e L P P1   bbb FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 17 All Dimensions in Millimeters Minimum Nominal Maximum 24 1.10 0.05 0.15 0.85 0.90 0.95 0.19 0.30 0.19 0.22 0.25 0.09 0.20 0.09 0.127 0.16 7.70 7.90 6.40 Basic 4.30 4.40 4.50 0.65 Basic 0.50 0.60 0.70 5.0 5.5 3.0 3.2 0° 8° 0.076 0.10 Rev A 06/10/15 844003-01 DATA SHEET Ordering Information Table 10. Ordering Information Part/Order Number 844003BG-01LF 844003BG-01LFT Marking ICS844003B01L ICS844003B01L Package “Lead-Free” 24 Lead TSSOP, E-Pad “Lead-Free” 24 Lead TSSOP, E-Pad Shipping Packaging Tube Tape & Reel Temperature 0C to 70C 0C to 70C NOTE: Parts that are ordered with an "LF" suffix to the part number are the Pb-Free configuration and are RoHS compliant. FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER 18 Rev A 06/10/15 844003-01 DATA SHEET Revision History Sheet Rev Table Page T10 1 18 A Rev A 06/10/15 Description of Change Date Features section - removed bullet referencing leaded devices Ordering Information - removed leaded devices. Updated data sheet format. 19 6/10/15 FEMTOCLOCKS™ CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER Corporate Headquarters Sales Tech Support 6024 Silver Creek Valley Road San Jose, CA 95138 USA 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.IDT.com email: clocks@idt.com DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion. All information in this document, including descriptions of product features and performance, is subject to change without notice. Performance specifications and the operating parameters of the described products are determined in the independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. While the information presented herein has been checked for both accuracy and reliability, Integrated Device Technology (IDT) assumes no responsibility for either its use or for the infringement of any patents or other rights of third parties, which would result from its use. No other circuits, patents, or licenses are implied. This product is intended for use in normal commercial applications. Any other applications, such as those requiring extended temperature ranges, high reliability or other extraordinary environmental requirements are not recommended without additional processing by IDT. IDT reserves the right to change any circuitry or specifications without notice. IDT does not authorize or warrant any IDT product for use in life support devices or critical medical instruments. Integrated Device Technology, IDT and the IDT logo are registered trademarks of IDT. Product specification subject to change without notice. Other trademarks and service marks used herein, including protected names, logos and designs, are the property of IDT or their respective third party owners. Copyright ©2015 Integrated Device Technology, Inc.. All rights reserved. IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for developers skilled in the art designing with Renesas products. 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No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products. (Rev.1.0 Mar 2020) Corporate Headquarters Contact Information TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/ Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners. © 2020 Renesas Electronics Corporation. All rights reserved.
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