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849S625BYILF

849S625BYILF

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    LQFP48

  • 描述:

    IC CLOCK SYNTHESIZER 48TQFP

  • 数据手册
  • 价格&库存
849S625BYILF 数据手册
849S625 Crystal-to-LVPECL/LVDS Clock Synthesizer Data Sheet General Description Features The 849S625 is a high frequency clock generator. The 849S625 uses an external 25MHz crystal to synthesize 625MHz, 312.5MHz, 156.25MHz and 125MHz clocks. The 849S625 has excellent cycle-to-cycle and RMS phase jitter performance. • • Ten selectable differential LVPECL or LVDS outputs • • • Crystal interface designed for a 25MHz, parallel resonant crystal • • • • Output duty cycle: 53% (maximum) The 849S625 operates at full 3.3V supply mode and is available in a fully RoHS compliant 48-lead TQFP, E-Pad package. Output frequencies of 625MHz, 312.5MHz, 156.25MHz or 125MHz using a 25MHz crystal. Cycle-to-cycle jitter: 25ps (maximum) RMS phase jitter at 156.25MHz (1MHz - 20MHz): 0.375ps (typical), LVDS outputs Full 3.3V supply mode -40°C to 85°C ambient operating temperature Available in lead-free (RoHS 6) packaging Frequency Table for Bank A, B and C Outputs Crystal Frequency (MHz) M Feedback Divider VCO Frequency (MHz) Nx Output Divider Output Frequency (MHz) 25 25 625 1 625 25 25 625 2 312.5 25 25 625 4 156.25 25 25 625 5 125 VCCO nQC1 SELB1 VEE ICS849S625I QA1 nQA1 QA2 nQA2 VCCO VEE QA3 nQA3 QA4 nQA4 QA5 nQA5 VCCO OEB OEC SELB0 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 5 6 31 7 30 8 29 9 28 10 27 11 26 12 25 13 14 15 16 17 18 19 20 21 22 23 24 1 2 3 4 QC1 nQC0 QC0 nc VCCO nQB1 QB1 nQB0 QB0 XTAL_IN XTAL_OUT VEE SELC0 SELC1 OEA VCC VCCO VCC REF_CLK VEE BYPASS MR SEL_OUT SELA0 SELA1 VCCA QA0 nQA0 Pin Assignment 48 Lead TQFP, E-Pad 7mm x 7mm x 1.0mm package body Y Package Top View ©2015 Integrated Device Technology, Inc 1 December 2, 2015 849S625 Data Sheet Block Diagram SEL_OUT OEA Pulldown Pullup SELA[1:0] Pulldown BYPASS Pulldown REF_CLK Pulldown 2 1 ÷2 NA = XTAL_IN 25MHz Phase Detector OSC VCO ÷1, ÷2, 575MHz - 630MHz ÷4, ÷5 0 6 QA[0:5] 6 nQA[0:5] NB = ÷1, ÷2, ÷4, ÷5 2 QB[0:1] 2 nQB[0:1] NC = ÷1, ÷2, ÷4, ÷5 2 XTAL_OUT M = ÷25 MR OEB SELB[0:1] SELC[0:1] OEC Pulldown Pullup Pulldown Pulldown 2 2 QC[0:1] nQC[0:1] 2 Pullup ©2015 Integrated Device Technology, Inc 2 December 2, 2015 849S625 Data Sheet Table 1. Pin Descriptions Number Name Type Description 1, 2 XTAL_IN XTAL_OUT Input Crystal oscillator interface. XTAL_IN is the input, XTAL_OUT is the output. 3, 12, 31, 46 VEE Power Negative supply pins. 4, 5 SELC0, SELC1 Input Pulldown 6 OEA Input Pullup Active high output enable. When logic HIGH, Bank A outputs are enabled and active. When logic LOW, the outputs are disabled and forced to HIGH/LOW. LVCMOS/LVTTL interface levels. 7, 48 VCC Power Core supply pins. Selects the output divider value. See Table 3D. LVCMOS/LVTTL interface levels. 8 OEB Input Pullup Active high output enable. When logic HIGH, Bank B outputs are enabled and active. When logic LOW, the outputs are disabled and forced to HIGH/LOW. LVCMOS/LVTTL interface levels. 9 OEC Input Pullup Active high output enable. When logic HIGH, Bank C outputs are enabled and active. When logic LOW, the outputs are disabled and forced to HIGH/LOW. LVCMOS/LVTTL interface levels. 10, 11 SELB0, SELB1 Input Pulldown 13, 19, 24, 32, 37 VCCO Power Output supply pins. 14, 15 nQC1, QC1 Output Differential output pair. LVPECL or LVDS interface levels. 16, 17 nQC0, QC0 Output Differential output pair. LVPECL or LVDS interface levels. 18 nc Unused No connect. 20, 21 nQB1, QB1 Output Differential output pair. LVPECL or LVDS interface levels. 22, 23 nQB0, QB0 Output Differential output pair. LVPECL or LVDS interface levels. 25, 26 nQA5, QA5 Output Differential output pair. LVPECL or LVDS interface levels. 27, 28 nQA4, QA4 Output Differential output pair. LVPECL or LVDS interface levels. 29, 30 nQA3, QA3 Output Differential output pair. LVPECL or LVDS interface levels. 33, 34 nQA2, QA2 Output Differential output pair. LVPECL or LVDS interface levels. 35, 36 nQA1, QA1 Output Differential output pair. LVPECL or LVDS interface levels. 38, 39 nQA0, QA0 Output Differential output pair. LVPECL or LVDS interface levels. 40 VCCA Power Analog supply pin. 41, 42 SELA1, SELA0 Input Pulldown Selects the output divider value. See Table 3B. LVCMOS/LVTTL interface levels. 43 SEL_OUT Input Pulldown Selects between either LVDS or LVPECL output levels. See Table 3A. LVCMOS/LVTTL interface levels. 44 MR Input Pulldown Master Reset. LVCMOS/LVTTL interface levels. 45 BYPASS Input Pulldown PLL BYPASS mode select pin. See Table 3F. LVCMOS/LVTTL interface levels. 47 REF_CLK Input Pulldown Single-ended reference clock input. LVCMOS/LVTTL interface levels. Selects the output divider value. See Table 3C. LVCMOS/LVTTL interface levels. NOTE: Pullup and Pulludown refer to internal input resistors. See Table 2, Pin Characteristics, for typical values. ©2015 Integrated Device Technology, Inc 3 December 2, 2015 849S625 Data Sheet Table 2. Pin Characteristics Symbol Parameter Test Conditions Minimum Typical Maximum Units CIN Input Capacitance 2 pF RPULLUP Input Pullup Resistor 51 k RPULLDOWN Input Pulldown Resistor 51 k Function Tables Table 3A. SEL_OUT Function Table Table 3E. MR Function Table Input Input SEL_OUT Output Levels MR Device Function 0 (default) LVDS 0 (default) Normal 1 LVPECL 1 Master Reset Table 3B. SELA Function Table Inputs Table 3F. BYPASS Function Table SELA0 SELA1 NA Bank A Output Divider 0 (default) 0 (default) ÷1 0 1 ÷2 1 0 ÷4 1 1 ÷5 Input BYPASS Device Function 0 (default) PLL mode. The output frequency is the VCO frequency divided by the selected output divider. 1 Bypass mode. The output frequency is the REF_CLK frequency divided by two and then divided by the selected output divider. Table 3C. SELB Function Table Inputs SELB0 SELB1 NB Bank B Output Divider 0 (default) 0 (default) ÷1 0 1 ÷2 1 0 ÷4 1 1 ÷5 Table 3D. SELC Function Table Inputs SELC0 SELC1 NC Bank C Output Divider 0 (default) 0 (default) ÷1 0 1 ÷2 1 0 ÷4 1 1 ÷5 ©2015 Integrated Device Technology, Inc 4 December 2, 2015 849S625 Data Sheet Absolute Maximum Ratings NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Rating Supply Voltage, VCC 4.6V Inputs, VI XTAL_IN Other Inputs 0V to VCC -0.5V to VCC + 0.5V Outputs, LVPECL IO Continuos Current Surge Current 50mA 100mA Outputs, LVDS IO Continuos Current Surge Current 10mA 15mA Package Thermal Impedance, JA 33.1C/W (0 mps) Storage Temperature, TSTG -65C to 150C DC Electrical Characteristics Table 4A. LVDS Power Supply DC Characteristics, VCC = VCCO = 3.3V ± 5%, TA = -40°C to 85°C Symbol Parameter VCC Core Supply Voltage VCCA Test Conditions Minimum Typical Maximum Units 3.135 3.3 3.465 V Analog Supply Voltage VCC – 0.16 3.3 VCC V VCCO Output Supply Voltage 3.135 3.3 3.465 V ICC Power Supply Current 107 mA ICCA Analog Supply Current 16 mA ICCO Output Supply Current 228 mA NOTE: Outputs configured as LVDS (SEL_OUT = 0). NOTE: For the Power Supply Voltage Sequence Information, see Applications Information section. Table 4B. LVPECL Power Supply DC Characteristics, VCC = VCCO = 3.3V ± 5%, VEE = 0V, TA = -40°C to 85°C Symbol Parameter VCC Core Supply Voltage VCCA Test Conditions Minimum Typical Maximum Units 3.135 3.3 3.465 V Analog Supply Voltage VCC – 0.16 3.3 VCC V VCCO Output Supply Voltage 3.135 3.3 3.465 V IEE Power Supply Current 181 mA ICCA Analog Supply Current 16 mA NOTE: Outputs configured as LVPECL (SEL_OUT = 1). NOTE: For the Power Supply Voltage Sequence Information, see Applications Information section. ©2015 Integrated Device Technology, Inc 5 December 2, 2015 849S625 Data Sheet Table 4C. LVCMOS/LVTTL DC Characteristics, VCC = VCCO = 3.3V ± 5%, VEE = 0V, TA = -40°C to 85°C Symbol Parameter Test Conditions Minimum VIH Input High Voltage VCC = 3.3V VIL Input Low Voltage VCC = 3.3V IIH Input High Current IIL Input Low Current Typical Maximum Units 2.2 VCC + 0.3 V -0.3 0.8 V REF_CLK, BYPASS, MR, SELA[1:0], SELB[1:0], SELC[1:0], SEL_OUT VCC = VIN = 3.465V 150 µA OEA, OEB, OEC VCC = VIN = 3.465V 10 µA REF_CLK, BYPASS, MR, SELA[1:0], SELB[1:0], SELC[1:0], SEL_OUT VCC = 3.465V, VIN = 0V -10 µA OEA, OEB, OEC VCC = 3.465V, VIN = 0V -150 µA Table 4D. LVPECL DC Characteristics, VCC = VCCO = 3.3V ± 5%, VEE = 0V, TA = -40°C to 85°C Symbol Parameter VOH Output High Voltage VOL Output Low Voltage VSWING Peak-to-Peak Output Voltage Swing Test Conditions Minimum Typical Maximum Units VCCO – 1.2 VCCO – 0.7 V VCCO – 2.0 VCCO – 1.5 V 0.6 1.0 V Maximum Units 475 mV 50 mV 1.375 V 50 mV Table 4E. LVDS DC Characteristics, VCC = VCCO = 3.3V ± 5%, TA = -40°C to 85°C Symbol Parameter VOD Differential Output Voltage VOD VOD Magnitude Change VOS Offset Voltage VOS VOS Magnitude Change ©2015 Integrated Device Technology, Inc Test Conditions Minimum 268 1.125 6 Typical December 2, 2015 849S625 Data Sheet AC Electrical Characteristics Table 5A. LVPECL AC Characteristics, VCC = VCCO = 3.3V ± 5%, VEE = 0V, TA = -40°C to 85°C Symbol fOUT tjit(Ø) Parameter Output Frequency RMS Phase Jitter (Random); NOTE 1 tjit(cc) Cycle-to-Cycle Jitter; NOTE 2 tR / tF Output Rise/Fall Time odc Output Duty Cycle tLOCK PLL Lock Time Test Conditions Minimum Typical Maximum Units Qx = ÷1 575 625 630 MHz Qx = ÷2 287.5 312.5 315 MHz Qx = ÷4 143.75 156.25 157.5 MHz Qx = ÷5 115 125 126 MHz 156.25MHz, Integration Range: (1MHz – 20MHz) 0.373 0.422 ps 156.25MHz, Integration Range: (12kHz – 20MHz) 0.694 1.04 ps 25 ps 180 350 ps 53 % 130 ms 10% to 90% 65 47 NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE: Outputs configured as LVPECL (SEL_OUT = 1). NOTE 1: Refer to the Phase Noise Plot. NOTE 2: This parameter is defined in accordance with JEDEC Standard 65. Table 5B. LVDS AC Characteristics, VCC = VCCO = 3.3V ± 5%, TA = -40°C to 85°C Symbol fOUT tjit(Ø) Parameter Output Frequency RMS Phase Jitter (Random); NOTE 1 tjit(cc) Cycle-to-Cycle Jitter; NOTE 2 tR / tF Output Rise/Fall Time odc Output Duty Cycle tLOCK PLL Lock Time Test Conditions Minimum Typical Maximum Units Qx = ÷1 575 625 630 MHz Qx = ÷2 287.5 312.5 315 MHz Qx = ÷4 143.75 156.25 157.5 MHz Qx = ÷5 115 125 126 MHz 156.25MHz, Integration Range: (1MHz – 20MHz) 0.375 0.413 ps 156.25MHz, Integration Range: (12kHz – 20MHz) 0.712 1.26 ps 20 ps 190 350 ps 53 % 130 ms 10% to 90% 65 47 NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE: Outputs configured as LVDS (SEL_OUT = 0). NOTE 1: Refer to the Phase Noise Plot. NOTE 2: This parameter is defined in accordance with JEDEC Standard 65. ©2015 Integrated Device Technology, Inc 7 December 2, 2015 849S625 Data Sheet Typical Phase Noise at 156.25MHz (LVPECL) Noise Power dBc Hz 156.25MHz RMS Phase Jitter (Random) 1MHz to 20MHz = 0.373ps (typical) Offset Frequency (Hz) Typical Phase Noise at 156.25MHz (LVPECL) Noise Power dBc Hz 156.25MHz RMS Phase Jitter (Random) 12kHz to 20MHz = 0.694ps (typical) Offset Frequency (Hz) ©2015 Integrated Device Technology, Inc 8 December 2, 2015 849S625 Data Sheet Typical Phase Noise at 156.25MHz (LVDS) Noise Power dBc Hz 156.25MHz RMS Phase Jitter (Random) 1MHz to 20MHz = 0.375ps (typical) Offset Frequency (Hz) Typical Phase Noise at 156.25MHz (LVDS) Noise Power dBc Hz 156.25MHz RMS Phase Jitter (Random) 12kHz to 20MHz = 0.712ps (typical) Offset Frequency (Hz) ©2015 Integrated Device Technology, Inc 9 December 2, 2015 849S625 Data Sheet Parameter Measurement Information 2V 2V VCC, VCCO 3.3V ±5% VCC, VCCO VCCA VCCA -1.3V±0.165V LVDS Output Load AC Test Circuit LVPECL Output Load AC Test Circuit nQAx, nQBx, nQCx QAx, QBx, QCx tcycle n tcycle n+1 tjit(cc) = |tcycle n – tcycle n+1| 1000 Cycles Cycle-to-Cycle Jitter RMS Phase Jitter nQAx, nQBx, nQCx nQAx, nQBx, nQCx 90% QAx, QBx, QCx 90% 90% VSW I N G QAx, QBx, QCx 10% 10% tR tF VOD 10% 10% tR tF LVDS Output Rise/Fall Time LVPECL Output Rise/Fall Time ©2015 Integrated Device Technology, Inc 90% 10 December 2, 2015 849S625 Data Sheet Parameter Measurement Information, continued nQAx, nQBx, nQCx QAx, QBx, QCx Output Duty Cycle/Pulse Width/Period Offset Voltage Setup Differential Output Voltage Setup ©2015 Integrated Device Technology, Inc 11 December 2, 2015 849S625 Data Sheet Applications Information Recommendations for Unused Input and Output Pins Inputs: Outputs: REF_CLK Input LVPECL Outputs For applications not requiring the use of the reference clock, it can be left floating. Though not required, but for additional protection, a 1k resistor can be tied from the REF_CLK to ground. All unused LVPECL outputs can be left floating. We recommend that there is no trace attached. Both sides of the differential output pair should either be left floating or terminated. Crystal Inputs LVDS Outputs For applications not requiring the use of the crystal oscillator input, both XTAL_IN and XTAL_OUT can be left floating. Though not required, but for additional protection, a 1k resistor can be tied from XTAL_IN to ground. All unused LVDS output pairs can be either left floating or terminated with 100 across. If they are left floating, there should be no trace attached. LVCMOS Control Pins All control pins have internal pullups or pulldowns; additional resistance is not required but can be added for additional protection. A 1k resistor can be used. Table 6. Recommended Crystal Specifications Symbol Parameter Value Crystal Cut Fundamental at Cut Resonance Parallel Resonance fT Frequency Tolerance ±25ppm at 250C fS Frequency Stability ±25ppm over -400C to +850C CL Load Capacitance 18pF CO Shunt Capacitance 5pF - 7pF ESR Equivalent Series Resistance 20 - 50 Aging @ 25 0C ±15ppm/10 Years Maximum NOTE: External tuning capacitors must be used for proper operation. Power Supply Voltage Sequence Information No power sequence restrictions apply if VCC and VCCA are supplied by the same power plane and the recommended VCCA filter is used ( see Figure 6). VCCO may be applied at any time before or after VCC ©2015 Integrated Device Technology, Inc and VCCA are applied. If VCC and VCCA are not supplied by the same power plane, VCCA must be powered on before or at the same time VCC is applied. The VCCO supply voltage may be applied at any time. 12 December 2, 2015 849S625 Data Sheet Overdriving the XTAL Interface The XTAL_IN input can accept a single-ended LVCMOS signal through an AC coupling capacitor. A general interface diagram is shown in Figure 1A. The XTAL_OUT pin can be left floating. The maximum amplitude of the input signal should not exceed 2V and the input edge rate can be as slow as 10ns. This configuration requires that the output impedance of the driver (Ro) plus the series resistance (Rs) equals the transmission line impedance. In addition, matched termination at the crystal input will attenuate the signal in half. This can be done in one of two ways. First, R1 and R2 in parallel should equal the transmission line impedance. For most 50 applications, R1 and R2 can be 100. This can also be accomplished by removing R1 and making R2 50. By overdriving the crystal oscillator, the device will be functional, but note, the device performance is guaranteed by using a quartz crystal. 3.3V 3.3V R1 100 Ro ~ 7 Ohm C1 Zo = 50 Ohm XTAL_IN RS 43 R2 100 Driv er_LVCMOS 0.1uF XTAL_OUT Cry stal Input Interf ace Figure 1A. General Diagram for LVCMOS Driver to XTAL Input Interface VCC=3.3V C1 Zo = 50 Ohm XTAL_IN R1 50 Zo = 50 Ohm 0.1uF XTAL_OUT LVPECL Cry stal Input Interf ace R2 50 R3 50 Figure 1B. General Diagram for LVPECL Driver to XTAL Input Interface ©2015 Integrated Device Technology, Inc 13 December 2, 2015 849S625 Data Sheet LVDS Driver Termination A general LVDS interface is shown in Figure 2. Standard termination for LVDS type output structure requires both a 100 parallel resistor at the receiver and a 100 differential transmission line environment. In order to avoid any transmission line reflection issues, the 100 resistor must be placed as close to the receiver as possible. IDT offers a full line of LVDS compliant devices with two types of output structures: current source and voltage source. The standard termination schematic as shown in Figure 2 can be used with either type of output structure. If using a non-standard termination, it is recommended to contact IDT and confirm if the output is a current source or a voltage source type structure. In addition, since these outputs are LVDS compatible, the input receivers amplitude and common mode input range should be verified for compatibility with the output. + LVDS Driver LVDS Receiver 100Ω – 100Ω Differential Transmission Line Figure 2. Typical LVDS Driver Termination Termination for 3.3V LVPECL Outputs The clock layout topology shown below is a typical termination for LVPECL outputs. The two different layouts mentioned are recommended only as guidelines. transmission lines. Matched impedance techniques should be used to maximize operating frequency and minimize signal distortion. Figures 3A and 3B show two different layouts which are recommended only as guidelines. Other suitable clock layouts may exist and it would be recommended that the board designers simulate to guarantee compatibility across all printed circuit and clock component process variations. The differential outputs are low impedance follower outputs that generate ECL/LVPECL compatible outputs. Therefore, terminating resistors (DC current path to ground) or current sources must be used for functionality. These outputs are designed to drive 50 R3 125 3.3V R4 125 3.3V 3.3V Zo = 50 + _ Input Zo = 50 R1 84 Figure 3A. 3.3V LVPECL Output Termination ©2015 Integrated Device Technology, Inc R2 84 Figure 3B. 3.3V LVPECL Output Termination 14 December 2, 2015 849S625 Data Sheet EPAD Thermal Release Path In order to maximize both the removal of heat from the package and the electrical performance, a land pattern must be incorporated on the Printed Circuit Board (PCB) within the footprint of the package corresponding to the exposed metal pad or exposed heat slug on the package, as shown in Figure 4. The solderable area on the PCB, as defined by the solder mask, should be at least the same size/shape as the exposed pad/slug area on the package to maximize the thermal/electrical performance. Sufficient clearance should be designed on the PCB between the outer edges of the land pattern and the inner edges of pad pattern for the leads to avoid any shorts. and dependent upon the package power dissipation as well as electrical conductivity requirements. Thus, thermal and electrical analysis and/or testing are recommended to determine the minimum number needed. Maximum thermal and electrical performance is achieved when an array of vias is incorporated in the land pattern. It is recommended to use as many vias connected to ground as possible. It is also recommended that the via diameter should be 12 to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is desirable to avoid any solder wicking inside the via during the soldering process which may result in voids in solder between the exposed pad/slug and the thermal land. Precautions should be taken to eliminate any solder voids between the exposed heat slug and the land pattern. Note: These recommendations are to be used as a guideline only. For further information, refer to the Application Note on the Surface Mount Assembly of Amkor’s Thermally/Electrically Enhance Leadframe Base Package, Amkor Technology. While the land pattern on the PCB provides a means of heat transfer and electrical grounding from the package to the board through a solder joint, thermal vias are necessary to effectively conduct from the surface of the PCB to the ground plane(s). The land pattern must be connected to ground through these vias. The vias act as “heat pipes”. The number of vias (i.e. “heat pipes”) are application specific SOLDER PIN PIN PAD EXPOSED HEAT SLUG GROUND PLANE THERMAL VIA SOLDER PIN LAND PATTERN (GROUND PAD) SOLDER PIN PAD Figure 4. Assembly for Exposed Pad Thermal Release Path - Side View (drawing not to scale) ©2015 Integrated Device Technology, Inc 15 December 2, 2015 849S625 Data Sheet Application Schematic Example Figure 5 shows an example of 849S625 application schematic. In this example, the device is operated at VCC = VCCA = VCCO = 3.3V. An 18pF parallel resonant 25MHz crystal is used. The load capacitance C1 = 27pF and C2 = 27pF are recommended for frequency accuracy. Depending on the parasitics of the printed circuit board layout, these values might required slight adjustment to optimize the frequency accuracy. Crystals with other load capacitance specifications can be used. This will require adjusting C1 and C2. For this device, the crystal load capacitors are required for proper operation. As with any high speed analog circuitry, the power supply pins are vulnerable to noise. To achieve optimum jitter performance, power supply isolation is required. The 849S625 provides separate power supplies to isolate from coupling into the internal PLL. In order to achieve the best possible filtering, it is recommended that the placement of the filter components be on the device side of the PCB as close to the power pins as possible. If space is limited, the 0.1uF capacitor in each power pin filter should be placed on the device side of the PCB and the other components can be placed on the opposite side. Power supply filter recommendations are a general guideline to be used for reducing external noise from coupling into the devices. The filter performance is designed for wide range of noise frequencies. This low-pass filter starts to attenuate noise at approximately 10kHz. If a specific frequency noise component is known, such as switching power supply frequencies, it is recommended that component values be adjusted and if required, additional filtering be added. Additionally, good general design practices for power plane voltage stability suggests adding bulk capacitances in the local area of all devices. The schematic example focuses on functional connections and is not configuration specific. Refer to the pin description and functional tables in the datasheet to ensure the logic control inputs are properly set.   VCC O VCC Z o_dif f = 100 ohm VCC C1 C2 C3 C4 C5 C6 C7 R1 0.01u 0. 01u 0.01u 0.01u 0. 01u 0.01u 0.01u 100 + R2 10 VCC A 41 42 SELB0 SELB1 10 11 SELC0 SELC1 4 5 O EA O EB O EC 6 8 9 1 X1 CL=18pF 2 C1 3 12 31 46 VEE VEE VEE VEE 7 48 VCC VCC VCC O VCCO VC CO VC CO VCC O SELA0 SELA1 40 U1 13 19 24 32 37 LVDS Termination SELA0 SELA1 SELB0 SELB1 SELC0 SELC1 O EA O EB O EC Q A0 nQ A0 Q A1 nQ A1 Q A2 nQ A2 Q A3 nQ A3 Q A4 nQ A4 Q A5 nQ A5 Q B0 nQ B0 Q B1 nQ B1 XTAL_IN SEL_OU T MR BYPASS REF _CLK NC Tuning capacitor required C 10 0. 01u VC CA C 11 10uF XTAL_OU T 25MHz Q A0 nQ A Q A1 nQ A1 Q A2 nQ A2 Q A3 nQ A3 Q A4 nQ A4 Q A5 nQ A5 23 22 21 20 Q B0 nQ B0 Q B1 nQ B1 17 16 15 14 Q C0 nQ C0 Q C1 nQ C1 3. 3V R4 133 R3 133 Z o = 50 O hm + Z o = 50 O hm - LVPECL Termination R5 82.5 R6 82.5 43 44 45 47 18 27pF QC 0 nQC 0 QC 1 nQC 1 39 38 36 35 34 33 30 29 28 27 26 25 I CS849S625I C2 SEL_O UT nR ESET PLL_BY PASS 27pF R7 1K Z o = 50 O hm Logic Control Input Examples + 3.3V BLM18BB221SN 1 Set Logic Input to '1' VC C Z o = 50 O hm Set Logic Input to '0' VCC 1 2 Fer rite Bead R U1 1K C 12 0. 1uF R U2 N ot Install To Logic Input pins R D1 N ot I nstall To Logic Input pins VCC C13 10uF 3.3V - C14 0.1uF BLM18BB221SN 2 1 R D2 1K 2 Fer rite Bead C 15 0. 1uF LVPECL Optional Y-Termination R8 R9 50 50 R 10 50 VC CO C16 C17 10uF 0.1uF Figure 5. 849S625 Application Schematic ©2015 Integrated Device Technology, Inc 16 December 2, 2015 849S625 Data Sheet LVPECL Power Considerations This section provides information on power dissipation and junction temperature for the 849S625. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the 849S625 is the sum of the core power plus the power dissipated in the load(s). The following is the power dissipation for VCC = 3.3V + 5% = 3.465V, which gives worst case results. NOTE: Please refer to Section 3 for details on calculating power dissipated in the load. The maximum current at 85°C is as follows: IEE_MAX = 170mA • Power (core)MAX = VCC_MAX * IEE_MAX = 3.465V * 170mA = 589.05mW • Power (outputs)MAX = 33.2mW/Loaded Output pair If all outputs are loaded, the total power is 10 * 33.2mW = 332mW Total Power_MAX (3.465V, with all outputs switching) = 589.05mW + 332mW = 921.05mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond wire and bond pad temperature remains below 125°C. The equation for Tj is as follows: Tj = JA * Pd_total + TA Tj = Junction Temperature JA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) TA = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and a multi-layer board, the appropriate value is 33.1°C/W per Table 7 below. Therefore, Tj for an ambient temperature of 85°C with all outputs switching is: 85°C + 0.921W * 33.1°C/W = 115.5°C. This is below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of board (multi-layer). Table 7. Thermal Resistance JA for 48 Lead TQFP, E-Pad, Forced Convection JA by Velocity Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards ©2015 Integrated Device Technology, Inc 0 1 2.5 33.1°C/W 27.2°C/W 25.7°C/W 17 December 2, 2015 849S625 Data Sheet 3. Calculations and Equations. The purpose of this section is to calculate the power dissipation for the LVPECL output pair. LVPECL output driver circuit and termination are shown in Figure 6. VCCO Q1 VOUT RL 50Ω VCCO - 2V Figure 6. LVPECL Driver Circuit and Termination To calculate worst case power dissipation into the load, use the following equations which assume a 50 load, and a termination voltage of VCCO – 2V. • For logic high, VOUT = VOH_MAX = VCCO_MAX – 0.7V (VCCO_MAX – VOH_MAX) = 0.7V • For logic low, VOUT = VOL_MAX = VCCO_MAX – 1.5V (VCCO_MAX – VOL_MAX) = 1.5V Pd_H is power dissipation when the output drives high. Pd_L is the power dissipation when the output drives low. Pd_H = [(VOH_MAX – (VCCO_MAX – 2V))/RL] * (VCCO_MAX – VOH_MAX) = [(2V – (VCCO_MAX – VOH_MAX))/RL] * (VCCO_MAX – VOH_MAX) = [(2V – 0.7V)/50] * 0.7V = 18.2mW Pd_L = [(VOL_MAX – (VCCO_MAX – 2V))/RL] * (VCCO_MAX – VOL_MAX) = [(2V – (VCCO_MAX – VOL_MAX))/RL] * (VCCO_MAX – VOL_MAX) = [(2V – 1.5V)/50] * 1.5V = 15mW Total Power Dissipation per output pair = Pd_H + Pd_L = 33.2mW ©2015 Integrated Device Technology, Inc 18 December 2, 2015 849S625 Data Sheet LVDS Power Considerations This section provides information on power dissipation and junction temperature for the 849S625. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the 849S625 is the sum of the core power plus the analog power plus the power dissipated in the load(s). The following is the power dissipation for VCC = 3.3V + 5% = 3.465V, which gives worst case results. The maximum current at 85°C is as follows: ICC_MAX = 100mA ICCA_MAX = 15mA ICCO_MAX = 212mA • Power (core)MAX = VCC_MAX * (ICC_MAX + ICCA_MAX) = 3.465V * (100mA + 15mA) = 398.475mW • Power (outputs)MAX = VCCO_MAX * ICCO_MAX = 3.465V * 212mA = 734.58mW Total Power_MAX = 398.475mW + 734.58mW = 1133.1mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond wire and bond pad temperature remains below 125°C. The equation for Tj is as follows: Tj = JA * Pd_total + TA Tj = Junction Temperature JA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) TA = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and a multi-layer board, the appropriate value is 33.1°C/W per Table 8 below. Therefore, Tj for an ambient temperature of 85°C with all outputs switching is: 85°C + 1.133W * 33.1°C/W = 122.5°C. This is below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of board (multi-layer). Table 8. Thermal Resistance JA for 48 Lead TQFP, E-Pad, Forced Convection JA by Velocity Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards ©2015 Integrated Device Technology, Inc 0 1 2.5 33.1°C/W 27.2°C/W 25.7°C/W 19 December 2, 2015 849S625 Data Sheet Reliability Information Table 9. JA vs. Air Flow Table for a 48 Lead TQFP, E-Pad JA vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 1 2.5 33.1°C/W 27.2°C/W 25.7°C/W Transistor Count The transistor count for 849S625 is: 3696 ©2015 Integrated Device Technology, Inc 20 December 2, 2015 849S625 Data Sheet Package Outline and Package Dimensions Package Outline - Y Suffix for 48 Lead TQFP, E-Pad -HD VERSION EXPOSED PAD DOWN 0.20 TAB -TAB, EXPOSED PART OF CONNECTION BAR OR TIE BAR Table 10. Package Dimensions for 48 Lead TQFP, E-Pad Symbol N A A1 A2 b c D&E D1 & E1 D2 & E2 D3 & E3 e L  JEDEC Variation: BBC - HD All Dimensions in Millimeters Minimum Nominal 48 0.05 0.95 0.17 0.09 0.45 0° 0.10 1.00 0.22 9.00 Basic 7.00 Basic 5.50 Ref. 3.5 0.5 Basic 0.60 Maximum 1.20 0.15 1.05 0.27 0.20 0.75 7° Reference Document: JEDEC Publication 95, MS-026 ©2015 Integrated Device Technology, Inc 21 December 2, 2015 849S625 Data Sheet Ordering Information Table 11. Ordering Information Part/Order Number 849S625BYILF 849S625BYILFT Marking ICS49S625BIL ICS49S625BIL ©2015 Integrated Device Technology, Inc Package “Lead-Free” 48 Lead TQFP, E-Pad “Lead-Free” 48 Lead TQFP, E-Pad 22 Shipping Packaging Tray Tape & Reel Temperature -40C to 85C -40C to 85C December 2, 2015 849S625 Data Sheet Revision History Sheet Rev A Table Page Description of Change T4E 6 VOD: changed units from V to mV T11 22 Deleted quantity from Tape &Rreel. Deleted Lead-Free note. ©2015 Integrated Device Technology, Inc Date 23 10/1/12 December 2, 2015 849S625 Data Sheet Corporate Headquarters Sales Tech Support 6024 Silver Creek Valley Road San Jose, CA 95138 USA www.IDT.com 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.IDT.com/go/sales www.idt.com/go/support DISCLAIMER Integrated Device Technology, Inc. (IDT) reserves the right to modify the products and/or specifications described herein at any time, without notice, at IDT's sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. 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