ADC1115S125HN/C1,5

ADC1115S125 Single 11-bit ADC; 125 Msps with input buffer; CMOS or LVDS DDR digital outputs Rev. 03 — 2 July 2012 Product data sheet 1. General description The ADC1115S125 is a single channel 11-bit Analog-to-Digital Converter (ADC) optimized for high dynamic performance and low power consumption at sample rates up to 125 Msps. Pipelined architecture and output error correction ensure the ADC1115S125 is accurate enough to guarantee zero missing codes over the entire operating range. Supplied from a single 3 V source, it can handle output logic levels from 1.8 V to 3.3 V in CMOS mode, because of a separate digital output supply. The ADC1115S125 supports the Low Voltage Differential Signalling (LVDS) Double Data Rate (DDR) output standard. An integrated Serial Peripheral Interface (SPI) allows the user to easily configure the ADC. The device also includes a SPI programmable full-scale to allow flexible input voltage range from 1 V to 2 V (peak-to-peak). With excellent dynamic performance from the baseband to input frequencies of 170 MHz or more, the ADC1115S125 is ideal for use in communications, imaging and medical applications - especially in high Intermediate Frequency (IF) applications because of the integrated input buffer. The input buffer ensures that the input impedance remains constant and low and the performance consistent over a wide frequency range. 2. Features and benefits  SNR, 66.5 dBFS; SFDR, 86 dBc  Sample rate up to 125 Msps  11-bit pipelined ADC core  Clock input divided by 2 for less jitter contribution  Integrated input buffer  Flexible input voltage range: 1 V (p-p) to 2 V (p-p)  CMOS or LVDS DDR digital outputs  Pin compatible with the ADC1415S series, the ADC1215S series and the ADC1015S series  Input bandwidth, 600 MHz  Power dissipation, 840 mW including analog input buffer  Serial Peripheral Interface (SPI)  Duty cycle stabilizer  Fast OuT-of-Range (OTR) detection  Offset binary, two’s complement, gray code  Power-down mode and Sleep mode  HVQFN40 package ® ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 3. Applications  Wireless and wired broadband communications  Portable instrumentation  Imaging systems  Digital predistortion loop, power amplifier linearization  Spectral analysis  Ultrasound equipment  Software defined radio 4. Ordering information Table 1. Ordering information Type number fs (Msps) Package Name ADC1115S125HN-C1 125 Description Version HVQFN40 plastic thermal enhanced very thin quad flat package; no leads; 40 terminals; body 6  6  0.85 mm SOT618-6 5. Block diagram SDIO/ODS CS SCLK/DFS ADC1115S ERROR CORRECTION AND DIGITAL PROCESSING SPI OTR INP INPUT BUFFER S/H INPUT STAGE ADC CORE 11-BIT PIPELINED OUTPUT DRIVERS INM OUTPUT DRIVERS CLOCK INPUT STAGE AND DUTY CYCLE CONTROL SYSTEM REFERENCE AND POWER MANAGEMENT CLKP CLKM VREF REFB VCM SENSE REFT CMOS: D10 to D0 or LVDS DDR: D9_D10_P to D0_D1_P D9_D10_M to D0_D1_M CMOS: DAV or LVDS DDR: DAVP DAVM PWD OE 005aaa146 Fig 1. Block diagram ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 2 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 6. Pinning information 31 DAV 32 n.c. 33 VDDO 34 OGND 35 OTR 36 SCLK/DFS 37 SDIO/ODS 38 CS 39 SENSE 40 VREF terminal 1 index area 31 DAV 32 n.c. 33 VDDO 34 OGND 35 OTR 36 SCLK/DFS 37 SDIO/ODS 38 CS terminal 1 index area 39 SENSE 40 VREF 6.1 Pinning REFB 1 30 n.c. REFB 1 30 n.c. REFT 2 29 n.c. REFT 2 29 n.c. AGND 3 28 LOW_D0_P AGND 3 28 n.c. VCM 4 VCM 4 27 D0 VDDA5V 5 VDDA5V 5 26 D1 AGND 6 AGND 6 25 D2 INM 7 24 D3_D4_P INM 7 24 D3 INP 8 23 D3_D4_M INP 8 23 D4 AGND 9 22 D5_D6_P AGND 9 22 D5 VDDA3V 10 21 D5_D6_M VDDA3V 10 21 D6 26 D1_D2_P D7_D8_P 20 D7_D8_M 19 25 D1_D2_M D9_D10_P 18 PWD 16 OE 15 DEC 14 CLKM 13 D9_D10_M 17 005aaa147 CLKP 12 VDDA3V 11 D7 20 D8 19 D9 18 D10 17 PWD 16 OE 15 DEC 14 CLKM 13 CLKP 12 VDDA3V 11 ADC1115S HVQFN40 27 LOW_D0_M ADC1115S HVQFN40 005aaa148 Transparent top view Transparent top view Fig 2. Pin configuration with CMOS digital outputs selected Fig 3. Pin configuration with LVDS/DDR digital outputs selected 6.2 Pin description Table 2. Pin description (CMOS digital outputs) Symbol Pin Type [1] Description REFB 1 O bottom reference REFT 2 O top reference AGND 3 G analog ground VCM 4 O common-mode output voltage VDDA5V 5 P analog power supply 5 V AGND 6 G analog ground INM 7 I complementary analog input INP 8 I analog input AGND 9 G analog ground VDDA3V 10 P analog power supply 3 V VDDA3V 11 P analog power supply 3 V CLKP 12 I clock input CLKM 13 I complementary clock input DEC 14 O regulator decoupling node OE 15 I output enable, active LOW PWD 16 I power down, active HIGH ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 3 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 2. Pin description (CMOS digital outputs) …continued Symbol Pin Type [1] Description D10 17 O data output bit 10 (Most Significant Bit (MSB)) D9 18 O data output bit 9 D8 19 O data output bit 8 D7 20 O data output bit 7 D6 21 O data output bit 6 D5 22 O data output bit 5 D4 23 O data output bit 4 D3 24 O data output bit 3 D2 25 O data output bit 2 D1 26 O data output bit 1 D0 27 O data output bit 0 (Least Significant Bit (LSB)) n.c. 28 - not connected n.c. 29 - not connected n.c. 30 - not connected DAV 31 O data valid output clock n.c. 32 - not connected VDDO 33 P output power supply OGND 34 G output ground OTR 35 O out of range SCLK/DFS 36 I SPI clock / data format select SDIO/ODS 37 I/O SPI data IO / output data standard CS 38 I SPI chip select SENSE 39 I reference programming pin VREF 40 I/O voltage reference input/output [1] P: power supply; G: ground; I: input; O: output; I/O: input/output. Table 3. Pin description (LVDS/DDR) digital outputs) Symbol Pin [1] Type [2] Description D9_D10_M 17 O differential output data D9 and D10 multiplexed, complement D9_D10_P 18 O differential output data D9 and D10 multiplexed, true D7_D8_M 19 O differential output data D7 and D8 multiplexed, complement D7_D8_P 20 O differential output data D7 and D8 multiplexed, true D5_D6_M 21 O differential output data D5 and D6 multiplexed, complement D5_D6_P 22 O differential output data D5 and D6 multiplexed, true D3_D4_M 23 O differential output data D3 and D4 multiplexed, complement D3_D4_P 24 O differential output data D3 and D4 multiplexed, true D1_D2_M 25 O differential output data D1 and D2 multiplexed, complement D1_D2_P 26 O differential output data D1 and D2 multiplexed, true LOW_D0_M 27 O differential output data D0 multiplexed, complement LOW_D0_P 28 O differential output data D0 multiplexed, true n.c. 29 - not connected ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 4 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 3. Pin description …continued (LVDS/DDR) digital outputs) Symbol Pin [1] Type [2] n.c. 30 - not connected DAVM 31 O data valid output clock, complement DAVP 32 O data valid output clock, true Description [1] Pins 1 to 16 and pins 33 to 40 are the same for both CMOS and LVDS DDR outputs (see Table 2) [2] P: power supply; G: ground; I: input; O: output; I/O: input/output. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VO output voltage pins D10 to D0 or pins D9_D10_P to D0_D1_P and pins D9_D10_M to D0_D1_M 0.4 +3.9 V VDDA(3V) analog supply voltage on pin VDDA3V 3V 0.5 +4.6 V VDDA(5V) analog supply voltage on pin VDDA5V 5V 0.5 +6.0 V VDDO output supply voltage 0.5 +4.6 V Tstg storage temperature 55 +125 C Tamb ambient temperature 40 +85 C Tj junction temperature - 125 C 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient [1] Rth(j-c) thermal resistance from junction to case [1] [1] Typ Unit 30.5 K/W 13.3 K/W Value for six layers board in still air with a minimum of 25 thermal vias. 9. Static characteristics Table 6. Symbol Static characteristics[1] Parameter Conditions Min Typ Max Unit Supplies VDDA(5V) analog supply voltage 5 V 4.75 5.0 5.25 V VDDA(3V) analog supply voltage 3 V 2.85 3.0 3.4 V VDDO output supply voltage 1.65 1.8 3.6 V IDDA(5V) analog supply current 5 V CMOS mode LVDS DDR mode 2.85 3.0 3.6 V fclk = 125 Msps; fi = 70 MHz - 46 - mA ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 5 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 6. Static characteristics[1] …continued Symbol Parameter Conditions Min Typ Max Unit IDDA(3V) analog supply current 3 V fclk = 125 Msps; fi = 70 MHz - 205 - mA IDDO output supply current CMOS mode; fclk = 125 Msps; fi = 70 MHz - 11 - mA LVDS DDR mode: fclk = 125 Msps; fi = 70 MHz - 39 - mA analog supply only - 840 - mW Power-down mode - 2 - mW Standby mode - 40 - mW differential clock input voltage peak-to-peak - 1.6 - V differential clock input voltage peak - 3.0 - V P power dissipation Clock inputs: pins CLKP and CLKM LVPECL Vi(clk)dif SINE wave Vi(clk)dif LVCMOS VIL LOW-level input voltage - - 0.3VDDA(3V) V VIH HIGH-level input voltage 0.7VDDA(3V) - - V Logic inputs: pins PWD and OE VIL LOW-level input voltage 0 - 0.8 V VIH HIGH-level input voltage 2 - VDDA(3V) V IIL LOW-level input current - 55 - A IIH HIGH-level input current - 65 - A - 0.3VDDA(3V) V Serial peripheral interface: pins CS, SDIO/ODS, SCLK/DFS VIL LOW-level input voltage 0 VIH HIGH-level input voltage 0.7VDDA(3V) - VDDA(3V) V IIL LOW-level input current 10 - +10 A IIH HIGH-level input current 50 - +50 A CI input capacitance - 4 - pF Digital outputs, CMOS mode: pins D10 to D0, OTR, DAV Output levels, VDDO = 3 V VOL LOW-level output voltage OGND - 0.2VDDO V VOH HIGH-level output voltage 0.8VDDO - VDDO V CO output capacitance - 3 - pF high impedance; OE = HIGH Output levels, VDDO = 1.8 V VOL LOW-level output voltage OGND - 0.2VDDO V VOH HIGH-level output voltage 0.8VDDO - VDDO V Digital outputs, LVDS mode: pins D9_D10_P to D0_D1_P, D9_D10_M to D0_D1_M, DAVP and DAVM Output levels, VDDO = 3 V only, Rload = 100  VO(offset) output offset voltage output buffer current set to 3.5 mA ADC1115S125 3 Product data sheet - 1.2 - V © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 6 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 6. Static characteristics[1] …continued Symbol Parameter Conditions Min Typ Max Unit VO(dif) differential output voltage output buffer current set to 3.5 mA - 350 - mV CO output capacitance - 3 - pF Analog inputs: pins INP and INM II input current 5 - +5 A RI input resistance - 550 -  CI input capacitance VI(cm) common-mode input voltage Bi input bandwidth VI(dif) differential input voltage VINP = VINM peak-to-peak - 1.3 - pF 0.9 1.5 2 V - 600 - MHz 2 V 1 Common mode output voltage: pin VCM VO(cm) common-mode output voltage - 0.5VDDA(3V) - V IO(cm) common-mode output current - 4 - mA I/O reference voltage: pin VREF VVREF voltage on pin VREF output - 0.5 to 1 - V input 0.5 - 1 V - 0.2 - LSB - 0.1 - LSB Accuracy INL integral non-linearity DNL differential non-linearity Eoffset offset error - 2 - mV EG gain error - 0.5 - %FS - 54 - dBc guaranteed no missing codes Supply PSRR [1] power supply rejection ratio 200 mV (p-p) on VDDA(3V) Typical values measured at VDDA(3V) = 3 V, VDDO = 1.8 V, VDDA(5V) = 5 V; Tamb = 25 C and CL = 5 pF; minimum and maximum values are across the full temperature range Tamb = 40 C to +85 C at VDDA(3V) = 3 V, VDDO = 1.8 V, VDDA(5V) = 5 V, VINP  VINM = 1 dBFS; internal reference mode; applied to CMOS and LVDS interface; unless otherwise specified. ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 7 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 10. Dynamic characteristics 10.1 Dynamic characteristics Table 7. Symbol Dynamic characteristics[1] Parameter Conditions ADC1115S125 Min Unit Typ Max Analog signal processing 2H second harmonic level 3H third harmonic level THD ENOB SNR SFDR IMD [1] total harmonic distortion effective number of bits signal-to-noise ratio spurious-free dynamic range Intermodulation distortion fi = 3 MHz - 88 - dBc fi = 30 MHz - 87 - dBc fi = 70 MHz - 85 - dBc fi = 170 MHz - 83 - dBc fi = 3 MHz - 87 - dBc fi = 30 MHz - 86 - dBc fi = 70 MHz - 84 - dBc fi = 170 MHz - 82 - dBc fi = 3 MHz - 84 - dBc fi = 30 MHz - 83 - dBc fi = 70 MHz - 81 - dBc fi = 170 MHz - 79 - dBc fi = 3 MHz - 10.7 - bits fi = 30 MHz - 10.7 - bits fi = 70 MHz - 10.7 - bits fi = 170 MHz - 10.6 - bits fi = 3 MHz - 66.2 - dBFS fi = 30 MHz - 66.2 - dBFS fi = 70 MHz - 66.0 - dBFS fi = 170 MHz - 65.8 - dBFS fi = 3 MHz - 87 - dBc fi = 30 MHz - 86 - dBc fi = 70 MHz - 84 - dBc fi = 170 MHz - 82 - dBc fi = 3 MHz - 89 - dBc fi = 30 MHz - 88 - dBc fi = 70 MHz - 86 - dBc fi = 170 MHz - 84 - dBc Typical values measured at VDDA(3V) = 3 V, VDDO = 1.8 V, VDDA(5V) = 5 V; Tamb = 25 C and CL = 5 pF; minimum and maximum values are across the full temperature range Tamb = 40 C to +85 C at VDDA(3V) = 3 V, VDDO = 1.8 V, VDDA(5V) = 5 V, VINP  VINM = 1 dBFS; internal reference mode; applied to CMOS and LVDS interface; unless otherwise specified. ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 8 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 10.2 Clock and digital output timing Table 8. Clock and digital output timing characteristics[1] Symbol Parameter Conditions Min Typ Max Unit Clock timing input: pins CLKP and CLKM fclk clock frequency 100 - 125 MHz tlat(data) data latency time - 13.5 - clock cycles clk clock duty cycle DCS_EN = 1 30 50 70 % DCS_EN = 0 45 50 55 % td(s) sampling delay time - 0.8 - ns twake wake-up time - 76 - s DATA 8.2 9.7 11.3 ns DAV - 3.4 - ns - 5.6 - ns CMOS Mode timing output: pins D10 to D0 and DAV tPD propagation delay tsu set-up time th hold time tr rise time DATA tf fall time DATA - 2.8 - ns [2] 0.39 - 2.4 ns 0.26 - 2.4 ns [2] 0.19 - 2.4 ns DAV LVDS DDR mode timing output: pins D9_D10_P to D0_D1_P, D9_D10_M to D0_D1_M, DAVP and DAVM tPD propagation delay tsu set-up time th hold time DATA 2.2 4.0 6.6 ns DAV - 2.2 - ns - 1.9 - ns tr rise time DATA tf fall time DATA - 1.7 - ns [3] 0.5 - 5 ns 0.18 - 2.4 ns [3] 0.15 - 1.6 ns DAV [1] Typical values measured at VDDA(3V) = 3 V, VDDO = 1.8 V, VDDA(5V) = 5 V; Tamb = 25 C and CL = 5 pF; minimum and maximum values are across the full temperature range Tamb = 40 C to +85 C at VDDA(3V) = 3 V, VDDO = 1.8 V, VDDA(5V) = 5 V, VINP  VINM = 1 dBFS; internal reference mode; applied to CMOS and LVDS interface; unless otherwise specified. [2] Measured between 20 % to 80 % of VDDO. [3] Rise time measured from 50 mV to +50 mV; fall time measured from +50 mV to 50 mV. ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 9 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs N+1 N td(s) N+2 tclk CLKP CLKM tPD (N − 14) (N − 13) (N − 12) (N − 11) DATA tsu tPD th DAV tclk 005aaa060 Fig 4. CMOS mode timing N+1 N td(s) N+2 tclk CLKP CLKM tPD (N − 14) (N − 13) (N − 12) (N − 11) Dx_Dx + 1_P Dx Dx + 1 Dx Dx + 1 Dx Dx + 1 Dx Dx + 1 Dx Dx + 1 Dx_Dx + 1_M tsu th tsu th tPD DAVP DAVM tclk Fig 5. LDVS DDR mode timing ADC1115S125 3 Product data sheet 005aaa061 © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 10 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 10.3 SPI timings Table 9. SPI timings characteristics[1] Symbol Parameter tw(SCLK) SCLK pulse width tw(SCLKH) SCLK HIGH pulse width - 16 - ns tw(SCLKL) SCLK LOW pulse width - 16 - ns tsu set-up time data to SCLK HIGH - 5 - ns CS to SCLK HIGH - 5 - ns data to SCLK HIGH - 2 - ns CS to SCLK HIGH - 2 - ns - 25 - MHz hold time th fclk(max) [1] Conditions maximum clock frequency Min Typ Max Unit - 40 - ns Typical values measured at VDDA(3V) = 3 V, VDDO = 1.8 V, VDDA(5V) = 5 V, Tamb = 25 C and CL = 5 pF; minimum and maximum values are across the full temperature range Tamb = 40 C to +85 C at VDDA = 3 V, VDDO = 1.8 V. tsu tsu th CS tw(SCLKL) th tw(SCLKH) tw(SCLK) SCLK SDIO R/W W1 W0 A12 A11 D2 D1 D0 005aaa065 Fig 6. SPI timing ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 11 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 10.4 Typical characteristics 001aam616 100 SFDR (dBc) 001aam615 80 (1) SNR (dBFS) (1) 80 60 60 (2) (2) 40 40 20 20 0 0 10 30 50 70 δ (%) 90 10 T = 25 C; VDD = 3 V; fi = 170 MHz; fs = 125 Msps (1) DCS on (2) DCS off (2) DCS off Spurious-free dynamic range as a function of duty cycle () 001aam617 92 SFDR (dBc) 88 50 70 δ (%) 90 T = 25 C; VDD = 3 V; fi = 170 MHz; fs = 125 Msps (1) DCS on Fig 7. 30 Fig 8. Signal-to-noise ratio as a function of duty cycle () 001aam618 80 (1) SNR (dBFS) (2) 60 (1) (2) (3) (3) 84 40 80 20 10 30 50 70 δ (%) 90 (1) Tamb = 40 C, typical supply voltages 10 30 50 70 δ (%) (1) Tamb = 40 C, typical supply voltages (2) Tamb = +25 C, typical supply voltages (2) Tamb = +25 C, /typical supply voltages (3) Tamb = +90 C, typical supply voltages (3) Tamb = +90 C, typical supply voltages Fig 9. Spurious-free dynamic range as a function of duty cycle () Fig 10. Signal-to-noise ratio as a function of duty cycle () ADC1115S125 3 Product data sheet 90 © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 12 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 001aam659 90 001aam660 75 SFDR (dBc) SNR (dBFS) 86 73 82 71 78 69 74 67 70 65 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 0.5 1.0 1.5 2.0 2.5 VI(cm) (V) Fig 11. Spurious-free dynamic range as a function of common-mode input voltage (Vi(cm)) 3.0 3.5 VI(cm) (V) Fig 12. Signal-to-noise ratio as a function of common-mode input voltage (Vi(cm)) 11. Application information 11.1 Device control The ADC1115S125 can be controlled via the Serial Peripheral Interface (SPI control mode) or directly via the I/O pins (Pin control mode). 11.1.1 SPI and Pin control modes The device enters Pin control mode at power-up, and remains in this mode as long as pin CS is held HIGH. In Pin control mode, the SPI pins SDIO, CS and SCLK are used as static control pins. SPI control mode is enabled by forcing pin CS LOW. Once SPI control mode has been enabled, the device remains in this mode. The transition from Pin control mode to SPI control mode is illustrated in Figure 13. CS SCLK/DFS SDIO/ODS Pin control mode Data format two's complement SPI control mode Data format offset binary LVDS DDR CMOS R/W W1 W0 A12 005aaa039 Fig 13. Control mode selection When the device enters SPI control mode, the output data standard and data format are determined by the level on pin SDIO as soon as a transition is triggered by a falling edge on CS. ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 13 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 11.1.2 Operating mode selection The active ADC1115S125 operating mode (Power-up, Power-down or Sleep) can be selected via the SPI interface (see Table 19) or using pins PWD and OE in Pin control mode, as described in Table 10. Table 10. Operating mode selection via pin PWD and OE Pin PWD Pin OE Operating mode Output high-Z 0 0 Power-up no 0 1 Power-up yes 1 0 Sleep yes 1 1 Power-down yes 11.1.3 Selecting the output data standard The output data standard (CMOS or LVDS DDR) can be selected via the SPI interface (see Table 23) or using pin ODS in Pin control mode. LVDS DDR is selected when ODS is HIGH, otherwise CMOS is selected. 11.1.4 Selecting the output data format The output data format can be selected via the SPI interface (offset binary, two’s complement or gray code; see Table 23) or using pin DFS in Pin control mode (offset binary or two’s complement). Offset binary is selected when DFS is LOW. When DFS is HIGH, two’s complement is selected. 11.2 Analog inputs 11.2.1 Input stage The analog input of the ADC1115S125 supports a differential or a single-ended input drive. Optimal performance is achieved using differential inputs. The ADC inputs are internally biased and need to be decoupled. The full-scale analog input voltage range is configurable between 1 V (p-p) and 2 V (p-p) via a programmable internal reference (see Section 11.3 and Table 21). The equivalent circuit of the input buffer followed by the Sample and Hold (S/H) input stage, including ElectroStatic Discharge (ESD) protection and circuit and package parasitics, is shown in Figure 14. ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 14 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs package ESD parasitics switch INP Ron = 15 Ω 8 internal clock 4 pF sampling capacitor INPUT BUFFER switch INM Ron = 15 Ω 7 internal clock 4 pF sampling capacitor 005aaa107 Fig 14. Input sampling circuit and input buffer The integrated input buffer offers the following advantages: • The kickback effect is avoided - the charge injection and glitches generated by the S/H input stage are isolated from the input circuitry. So there’s no need for additional filtering. • The input capacitance is very low and constant over a wide frequency range, which makes the ADC1115S125 easy to drive. The sample phase occurs when the internal clock (derived from the clock signal on pin CLKP/CLKM) is HIGH. The voltage is then held on the sampling capacitors. When the clock signal goes LOW, the stage enters the hold phase and the voltage information is transmitted to the ADC core. ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 15 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 11.2.2 Transformer The configuration of the transformer circuit is determined by the input frequency. The configuration shown in Figure 15 would be suitable for a baseband application. ADT1-1WT Analog input 100 nF 100 nF INP 50 Ω 100 nF 100 nF INM VCM 100 nF 100 nF 005aaa108 Fig 15. Single transformer configuration suitable for baseband applications The configuration shown in Figure 16 is recommended for high frequency applications. In both cases, the choice of transformer is a compromise between cost and performance. ADT1-1WT Analog input 100 nF ADT1-1WT 100 nF INP 50 Ω 100 Ω 50 Ω 100 nF INM VCM 100 nF 100 nF 100 nF 005aaa109 Fig 16. Dual transformer configuration suitable for high intermediate frequency application ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 16 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 11.3 System reference and power management 11.3.1 Internal/external references The ADC1115S125 has a stable and accurate built-in internal reference voltage to adjust the ADC full-scale. This reference voltage can be set internally via SPI or with pins VREF and SENSE (programmable in 1 dB steps between 0 dB and 6 dB via control bits INTREF[2:0] when bit INTREF_EN = logic 1; see Table 21). See Figure 18 to Figure 21. The equivalent reference circuit is shown in Figure 17. External reference is also possible by providing a voltage on pin VREF as described in Figure 20. REFT REFERENCE AMP REFB VREF EXT_ref EXT_ref BUFFER BANDGAP REFERENCE ADC CORE SENSE SELECTION LOGIC 005aaa164 Fig 17. Reference equivalent schematic If bit INTREF_EN is set to logic 0, the reference voltage is determined either internally or externally as detailed in Table 11. Table 11. Reference selection Selection SPI bit INTREF_EN SENSE pin VREF pin Full-scale (p-p) internal (Figure 18) 0 AGND 330 pF capacitor to AGND 2V internal (Figure 19) 0 pin VREF connected to pin SENSE and via a 330 pF capacitor to AGND external (Figure 20) 0 VDDA(3V) external voltage between 0.5 V and 1 V[1] 1 V to 2 V internal via SPI (Figure 21) 1 pin VREF connected to pin SENSE and via 330 pF capacitor to AGND 1 V to 2 V [1] The voltage on pin VREF is doubled internally to generate the internal reference voltage. ADC1115S125 3 Product data sheet 1V © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 17 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Figure 18 to Figure 21 illustrate how to connect the SENSE and VREF pins to select the required reference voltage source. VREF VREF 330 pF 330 pF REFERENCE EQUIVALENT SCHEMATIC REFERENCE EQUIVALENT SCHEMATIC SENSE SENSE 005aaa117 005aaa116 Fig 18. Internal reference, 2 V (p-p) full scale Fig 19. Internal reference, 1 V (p-p) full scale VREF V 0.1 μF VREF 330 pF REFERENCE EQUIVALENT SCHEMATIC REFERENCE EQUIVALENT SCHEMATIC SENSE VDDA SENSE 005aaa119 005aaa118 Fig 20. External reference, 1 V (p-p) to 2 V (p-p) full-scale Fig 21. Internal reference via SPI, 1 V (p-p) to 2 V (p-p) full-scale 11.3.2 Programmable full-scale The full-scale is programmable between 1 V (peak-to-peak) to 2 V (peak-to-peak) (see Table 12). Table 12. Reference SPI gain control INTREF Gain Full-scale (p-p) 000 0 dB 2V 001 1 dB 1.78 V 010 2 dB 1.59 V 011 3 dB 1.42 V 100 4 dB 1.26 V 101 5 dB 1.12 V 110 6 dB 1V 111 reserved x 11.3.3 Common-mode output voltage (VO(cm)) A 0.1 F filter capacitor should be connected between pin VCM and ground. 11.3.4 Biasing The common-mode input voltage (VI(cm)) on pins INP and INM is set internally. The input buffer bias current can be set to one of three levels (high, medium or low) via the SPI (see Table 22). ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 18 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 11.4 Clock input 11.4.1 Drive modes The ADC1115S can be driven differentially (LVPECL). It can also be driven by a single-ended Low Voltage Complementary Metal Oxide Semiconductor (LVCMOS) signal connected to pin CLKP (pin CLKM should be connected to ground via a capacitor) or CLKM (pin CLKP should be connected to ground via a capacitor). CLKP LVCMOS clock input CLKP CLKM LVCMOS clock input 005aaa174 CLKM 005aaa053 a. Rising edge LVCMOS b. Falling edge LVCMOS Fig 22. LVCMOS single-ended clock input Sine clock input CLKP Sine clock input CLKP CLKM CLKM 005aaa173 005aaa054 a. Sine clock input b. Sine clock input (with transformer) CLKP LVPECL clock input CLKM 005aaa172 c. LVPECL clock input1 Fig 23. Differential clock input ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 19 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 11.4.2 Equivalent input circuit The equivalent circuit of the input clock buffer is shown in Figure 24. The common-mode voltage of the differential input stage is set via internal 5 k resistors. Package ESD Parasitics CLKP Vcm(clk) SE_SEL SE_SEL 5 kΩ 5 kΩ CLKM 005aaa056 Vcm(clk) = common-mode voltage of the differential input stage. Fig 24. Equivalent input circuit Single-ended or differential clock inputs can be selected via the SPI interface (see Table 20). If single-ended is enabled, the input pin (CLKM or CLKP) is selected via control bit SE_SEL. If single-ended is implemented without setting bit SE_SEL to the appropriate value, the unused pin should be connected to ground via a capacitor. 11.4.3 Duty cycle stabilizer The duty cycle stabilizer can improve the overall performances of the ADC by compensating the duty cycle of the input clock signal. When the duty cycle stabilizer is active (bit DCS_EN = logic 1; see Table 20), the circuit can handle signals with duty cycles of between 30 % and 70 % (typical). When the duty cycle stabilizer is disabled (DCS_EN = logic 0), the input clock signal should have a duty cycle of between 45% and 55%. 11.4.4 Clock input divider The ADC1115S125 contains an input clock divider that divides the incoming clock by a factor of 2 (when bit CLKDIV = logic 1; see Table 20). This feature allows the user to deliver a higher clock frequency with better jitter performance, leading to a better SNR result once acquisition has been performed. ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 20 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 11.5 Digital outputs 11.5.1 Digital output buffers: CMOS mode The digital output buffers can be configured as CMOS by setting bit LVDS_CMOS to logic 0 (see Table 23). Each digital output has a dedicated output buffer. The equivalent circuit of the CMOS digital output buffer is shown in Figure 25. The buffer is powered by a separate OGND/VDDO to ensure 1.8 V to 3.3 V compatibility and is isolated from the ADC core. Each buffer can be loaded by a maximum of 10 pF. VDDO Parasitics LOGIC DRIVER ESD Package 50 Ω Dx OGND 005aaa057 Fig 25. CMOS digital output buffer The output resistance is 50  and is the combination of the an internal resistor and the equivalent output resistance of the buffer. There is no need for an external damping resistor. The drive strength of both data and DAV buffers can be programmed via the SPI in order to adjust the rise and fall times of the output digital signals (see Table 30): ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 21 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 11.5.2 Digital output buffers: LVDS DDR mode The digital output buffers can be configured as LVDS DDR by setting bit LVDS_CMOS to logic 1 (see Table 23). VDDO 3.5 mA typ − + DxP/Dx + 1P 100 Ω RECEIVER DxM/Dx + 1M − + OGND 005aaa058 Fig 26. LVDS DDR digital output buffer - externally terminated Each output should be terminated externally with a 100  resistor (typical) at the receiver side (Figure 26) or internally via SPI control bits LVDS_INT_TER[2:0] (see Figure 27 and Table 32). VDDO 3.5 mA typ − + DxP/Dx + 1P 100 Ω RECEIVER DxM/Dx + 1M + − OGND 005aaa059 Fig 27. LVDS DDR digital output buffer - internally terminated The default LVDS DDR output buffer current is set to 3.5 mA. It can be programmed via the SPI (bits DAVI[1:0] and DATAI[1:0]; see Table 31) in order to adjust the output logic voltage levels. Table 13. LVDS DDR output register 2 LVDS_INT_TER[2:0] Resistor value () 000 no internal termination 001 300 010 180 011 110 100 150 ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 22 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 13. LVDS DDR output register 2 …continued LVDS_INT_TER[2:0] Resistor value () 101 100 110 81 111 60 11.5.3 DAta Valid (DAV) output clock A data valid output clock signal (DAV) is provided that can be used to capture the data delivered by the ADC1115S125. Detailed timing diagrams for CMOS and LVDS DDR modes are provided in Figure 4 and Figure 5 respectively. 11.5.4 Out-of-Range (OTR) An out-of-range signal is provided on pin OTR. The latency of OTR is fourteen clock cycles. The OTR response can be speeded up by enabling Fast OTR (bit FASTOTR = logic 1; see Table 29). In this mode, the latency of OTR is reduced to only four clock cycles. The Fast OTR detection threshold (below full-scale) can be programmed via bits FASTOTR_DET[2:0]. Table 14. Fast OTR register FASTOTR_DET[2:0] Detection level (dB) 000 20.56 001 16.12 010 11.02 011 7.82 100 5.49 101 3.66 110 2.14 111 0.86 11.5.5 Digital offset By default, the ADC1115S125 delivers output code that corresponds to the analog input. However it is possible to add a digital offset to the output code via the SPI (bits DIG_OFFSET[5:0]; see Table 25). 11.5.6 Test patterns For test purposes, the ADC1115S125 can be configured to transmit one of a number of predefined test patterns (via bits TESTPAT_SEL[2:0]; see Table 26). A custom test pattern can be defined by the user (TESTPAT_USER; see Table 27 and Table 28) and is selected when TESTPAT_SEL[2:0] = 101. The selected test pattern is transmitted regardless of the analog input. ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 23 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 11.5.7 Output codes versus input voltage Table 15. Output codes VINP  VINM Offset binary Two’s complement OTR pin < 1 000 0000 0000 100 0000 0000 1 1.0000000 000 0000 0000 100 0000 0000 0 0.9990234 000 0000 0001 100 0000 0001 0 0.9980469 000 0000 0010 100 0000 0010 0 0.9970703 000 0000 0011 100 0000 0011 0 0.996093 000 0000 0100 100 0000 0100 0 .... .... .... 0 0.0019531 011 1111 1110 111 1111 1110 0 0.0009766 011 1111 1111 111 1111 1111 0 0.0000000 100 0000 0000 000 0000 0000 0 +0.0009766 100 0000 0001 000 0000 0001 0 +0.0019531 100 0000 0010 000 0000 0010 0 .... .... .... 0 +0.9960938 111 1111 1011 011 1111 1011 0 +0.9970703 111 1111 1100 011 1111 1100 0 +0.9980469 111 1111 1101 011 1111 1101 0 +0.9990234 111 1111 1110 011 1111 1110 0 +1.0000000 111 1111 1111 011 1111 1111 0 > +1 111 1111 1111 011 1111 1111 1 11.6 Serial Peripheral Interface (SPI) 11.6.1 Register description The ADC1115S125 serial interface is a synchronous serial communications port that allows easy interfacing with many commonly-used microprocessors. It provides access to the registers that control the operation of the chip. This interface is configured as a 3-wire type (SDIO as bidirectional pin) Pin SCLK is the serial clock input and CS is the chip select pin. Each read/write operation is initiated by a LOW level on CS. A minimum of three bytes is transmitted (two instruction bytes and at least one data byte). The number of data bytes is determined by the value of bits W1 and W2 (see Table 17). Table 16. Instruction bytes for the SPI MSB LSB Bit 7 6 5 4 3 2 1 0 Description R/W[1] W1[2] W0[2] A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 [1] Bit R/W indicates whether it is a read (logic 1) or a write (logic 0) operation. [2] Bits W1 and W0 indicate the number of bytes to be transferred after the instruction byte (see Table 17). ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 24 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 17. Number of data bytes to be transferred after the instruction bytes W1 W0 Number of bytes transmitted 0 0 1 byte 0 1 2 bytes 1 0 3 bytes 1 1 4 bytes or more Bits A12 to A0 indicate the address of the register being accessed. In the case of a multiple byte transfer, this address is the first register to be accessed. An address counter is increased to access subsequent addresses. The steps involved in a data transfer are as follows: 1. A falling edge on CS in combination with a rising edge on SCLK determine the start of communications. 2. The first phase is the transfer of the 2-byte instruction. 3. The second phase is the transfer of the data which can vary in length but is always a multiple of 8 bits. The MSB is always sent first (for instruction and data bytes). 4. A rising edge on CS indicates the end of data transmission. CS SCLK SDIO R/W W1 W0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 D6 D5 Instruction bytes D4 D3 D2 Register N (data) D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 Register N + 1 (data) 005aaa062 Fig 28. SPI mode timing 11.6.2 Default modes at start-up During circuit initialization, it does not matter which output data standard has been selected. At power-up, the device enters Pin control mode. A falling edge on CS triggers a transition to SPI control mode. When the ADC1115S125 enters SPI control mode, the output data standard (CMOS/LVDS DDR) is determined by the level on pin SDIO (see Figure 29). Once in SPI control mode, the output data standard can be changed via bit LVDS/CMOS in Table 23. When the ADC1115S125 enters SPI control mode, the output data format (two’s complement or offset binary) is determined by the level on pin SCLK (gray code can only be selected via the SPI). Once in SPI control mode, the output data format can be changed via bit DATA_FORMAT[1:0] in Table 23. ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 25 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs CS SCLK (Data format) SDIO (CMOS LVDS DDR) Offset binary, LVDS DDR default mode at start-up 005aaa063 Fig 29. Default mode at start-up: SCLK LOW = offset binary; SDIO HIGH = LVDS DDR CS SCLK (Data format) SDIO (CMOS LVDS DDR) two's complement, CMOS default mode at start-up 005aaa064 Fig 30. Default mode at start-up: SCLK HIGH = two’s complement; SDIO LOW = CMOS ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 26 of 36 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx Table 18. Integrated Device Technology ADC1115S125 3 Product data sheet 11.6.3 Register allocation map Register allocation map Register name R/W Bit definition 0005 Reset and operating mode R/W SW_RST 0006 Clock R/W - - - 0008 Internal reference R/W - - 0010 Input buffer R/W - 0011 Output data standard. R/W 0012 Output clock 0013 Bit 7 Default Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 RESERVED[2:0] Bit 1 - SE_SEL DIFF_SE - - - INTREF_EN - - - - - - - - LVDS_ CMOS OUTBUF OUTBUS_SWAP R/W - - - - DAVINV Offset R/W - - 0014 Test pattern 1 R/W - - 0015 Test pattern 2 R/W 0016 Test pattern 3 R/W TESTPAT_USER[2:0] - - 0017 Fast OTR R/W - - - - FASTOTR 0020 CMOS output R/W - - - - 0021 LVDS DDR O/P 1 R/W - - DAVI_x2_EN 0022 LVDS DDR O/P 2 R/W - - - Bit 0 Bin OP_MODE[1:0] CLKDIV DCS_EN INTREF[2:0] IB_IBIAS[1:0 ] - - DATA_FORMAT[1:0] DAVPHASE[2:0] TESTPAT_SEL[2:0] 0000 0000 0000 0000 - - - FASTOTR_DET[2:0] DAV_DRV[1:0] BIT_BYTE_WISE 0000 0000 0000 1110 TESTPAT_USER[10:3] - 0000 0011 0000 0000 - DAVI[1:0] 0000 0001 0000 0000 DIG_OFFSET[5:0] - 0000 0000 DATAI_x2_EN 0000 0000 0000 0000 DATA_DRV[1:0] 0000 1110 DATAI[1:0] 0000 0000 LVDS_INT_TER[2:0] 0000 0000 27 of 36 © IDT 2012. All rights reserved. ADC1115S125 - 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Rev. 03 — 2 July 2012 Addr. Hex ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 19. Reset and operating mode control register (address 0005h) bit description Default values are highlighted. Bit Symbol Access 7 SW_RST R/W Value Description reset digital section 0 no reset 1 performs a reset on SPI registers 6 to 4 RESERVED[2:0] 000 reserved 3 to 2 - 00 not used 1 to 0 OP_MODE[1:0] R/W operating mode 00 normal (Power-up) 01 Power-down 10 Sleep 11 normal (Power-up) Table 20. Clock control register (address 0006h) bit description Default values are highlighted. Bit Symbol 7 to 5 - 4 SE_SEL 3 DIFF_SE Access Value Description 000 not used R/W single-ended clock input pin select 0 CLKM 1 CLKP R/W differential/single ended clock input select 0 1 2 - 1 CLKDIV 0 R/W 1 DCS_EN single-ended not used clock input divide by 2 0 0 fully differential R/W disabled enabled duty cycle stabilizer 0 disabled 1 enabled ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 28 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 21. Internal reference control register (address 0008h) bit description Default values are highlighted. Bit Symbol 7 to 4 - 3 INTREF_EN Access Value Description 0000 not used R/W programmable internal reference enable 0 disable 1 2 to 0 INTREF[2:0] active R/W programmable internal reference 000 0 dB (FS = 2 V) 001 1 dB (FS = 1.78 V) 010 2 dB (FS = 1.59 V) 011 3 dB (FS = 1.42 V) 100 4 dB (FS = 1.26 V) 101 5 dB (FS = 1.12 V) 110 6 dB (FS = 1 V) 111 reserved Table 22. Input buffer control register (address 0010h) bit description Default values are highlighted. Bit Symbol 7 to 2 - 1 to 0 IB_IBIAS[1:0] Access Value Description 000000 not used R/W input buffer bias current 00 not used 01 medium 10 low 11 high Table 23. Output data standard control register (address 0011h) bit description Default values are highlighted. Bit Symbol 7 to 5 - 4 LVDS_CMOS 3 OUTBUF Access Value Description 000 not used R/W output data standard: LVDS DDR or CMOS 0 CMOS 1 LVDS DDR R/W output buffers enable 0 1 2 OUTBUS_SWAP R/W output enabled output disabled (high Z) output bus swapping 0 no swapping 1 output bus is swapped (MSB becomes LSB and vice versa) ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 29 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 23. Output data standard control register (address 0011h) bit description …continued Default values are highlighted. Bit Symbol Access 1 to 0 DATA_FORMAT[1:0] R/W Value Description output data format 00 offset binary 01 two’s complement 10 gray code 11 offset binary Table 24. Output clock register (address 0012h) bit description Default values are highlighted. Bit Symbol 7 to 4 - 3 DAVINV 2 to 0 DAVPHASE[2:0] Access Value Description 0000 not used R/W output clock data valid (DAV) polarity 0 normal 1 inverted R/W DAV phase select 000 output clock shifted (ahead) by 3 ns 001 output clock shifted (ahead) by 2.5 ns 010 output clock shifted (ahead) by 2 ns 011 output clock shifted (ahead) by 1.5 ns 100 output clock shifted (ahead) by 1 ns 101 output clock shifted (ahead) by 0.5 ns 110 default value as defined in timing section 111 output clock shifted (delayed) by 0.5 ns Table 25. Offset register (address 0013h) bit description Default values are highlighted. Bit Symbol 7 to 6 - 5 to 0 DIG_OFFSET[5:0] Access Value Description 00 not used R/W digital offset adjustment 011111 +31 LSB ... ... 000000 0 ... ... 100000 32 LSB Table 26. Test pattern register 1 (address 0014h) bit description Default values are highlighted. Bit Symbol 7 to 3 - Access Value Description 00000 not used ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 30 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 26. Test pattern register 1 (address 0014h) bit description …continued Default values are highlighted. Bit Symbol Access 2 to 0 TESTPAT_SEL[2:0] R/W Value Description digital test pattern select 000 off 001 mid scale 010 FS 011 +FS 100 toggle ‘1111..1111’/’0000..0000’ 101 custom test pattern 110 ‘1010..1010.’ 111 ‘010..1010’ Table 27. Test pattern register 2 (address 0015h) bit description Default values are highlighted. Bit Symbol Access Value Description 7 to 0 TESTPAT_USER[10:3] R/W 00000000 custom digital test pattern (bits 10 to 3) Table 28. Test pattern register 3 (address 0016h) bit description Default values are highlighted. Bit Symbol Access Value Description 7 to 5 TESTPAT_USER[2:0] R/W 000 custom digital test pattern (bits 2 to 0) 4 to 0 - 00000 not used Table 29. Fast OTR register (address 0017h) bit description Default values are highlighted. Bit Symbol 7 to 4 - 3 FASTOTR 2 to 0 FASTOTR_DET[2:0] Access Value Description 0000 not used R/W fast Out-of-Range (OTR) detection 0 disabled 1 enabled R/W set fast OTR detect level 000 20.56 dB 001 16.12 dB 010 11.02 dB 011 7.82 dB 100 5.49 dB 101 3.66 dB 110 2.14 dB 111 0.86 dB ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 31 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 30. CMOS output register (address 0020h) bit description Default values are highlighted. Bit Symbol 7 to 4 - 3 to 2 DAV_DRV[1:0] Access Value Description 0000 not used R/W drive strength for DAV CMOS output buffer 00 1 to 0 DATA_DRV[1:0] low 01 medium 10 high 11 very high R/W drive strength for DATA CMOS output buffer 00 low 01 medium 10 high 11 very high Table 31. LVDS DDR output register 1 (address 0021h) bit description Default values are highlighted. Bit Symbol 7 to 6 - 5 DAVI_x2_EN 4 to 3 2 1 to 0 DAVI[1:0] DATAI_x2_EN DATAI[1:0] Access Value Description 00 not used R/W double LVDS current for DAV LVDS buffer 0 disabled 1 enabled R/W LVDS current for DAV LVDS buffer 00 3.5 mA 01 4.5 mA 10 1.25 mA 11 2.5 mA R/W double LVDS current for DATA LVDS buffer 0 disabled 1 enabled R/W LVDS current for DATA LVDS buffer 00 3.5 mA 01 4.5 mA 10 1.25 mA 11 2.5 mA ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 32 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs Table 32. LVDS DDR output register 2 (address 0022h) bit description Default values are highlighted. Bit Symbol 7 to 4 - 3 BIT/BYTE_WISE 2 to 0 LVDS_INTTER[2:0] Access Value Description 0000 not used R/W DDR mode for LVDS output 0 bit wise (even data bits output on DAV rising edge / odd data bits output on DAV falling edge) 1 byte wise (MSB data bits output on DAV rising edge / LSB data bits output on DAV falling edge) R/W internal termination for LVDS buffer (DAV and DATA) 000 no internal termination 001 300  010 180  011 110  100 150  101 100  110 81  111 60  ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 33 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 12. Package outline HVQFN40: plastic thermal enhanced very thin quad flat package; no leads; 40 terminals; body 6 x 6 x 0.85 mm A B D SOT618-6 terminal 1 index area E A A1 c detail X e1 1/2 e e 11 20 C C A B C v w b y1 C y L 21 10 e e2 Eh 1/2 e 1 terminal 1 index area 30 40 31 X Dh 0 2.5 scale Dimensions Unit A(1) A1 b max 1.00 0.05 0.30 nom 0.85 0.02 0.21 min 0.80 0.00 0.18 mm 5 mm c D(1) Dh E(1) Eh 0.2 6.1 6.0 5.9 4.55 4.40 4.25 6.1 6.0 5.9 4.55 4.40 4.25 e e1 0.5 4.5 e2 L v 4.5 0.5 0.4 0.3 0.1 w y 0.05 0.05 y1 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. Outline version SOT618-6 References IEC JEDEC JEITA MO-220 --- sot618-6_po European projection Issue date 09-02-23 09-03-04 Fig 31. Package outline SOT618-6 (HVQFN40) ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 34 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 13. Revision history Table 33. Revision history Document ID Release date Data sheet status Change Supersedes notice ADC1115S125 v.3 20120702 Product data sheet - ADC1115S125 v.2 ADC1115S125 v.2 20101217 Product data sheet - ADC1115S125 v.1 Modifications: ADC1115S125 v.1 • • • Data sheet status changed from Preliminary to Product. Text and drawings updated throughout entire data sheet. Section 10.4 “Typical characteristics” added to the data sheet. 20100412 Preliminary data sheet - - 14. Contact information For more information or sales office addresses, please visit: http://www.idt.com ADC1115S125 3 Product data sheet © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 35 of 36 ADC1115S125 Integrated Device Technology 11-bit, 125 Msps ADC; input buffer; CMOS or LVDS DDR digital outputs 15. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 10.1 10.2 10.3 10.4 11 11.1 11.1.1 11.1.2 11.1.3 11.1.4 11.2 11.2.1 11.2.2 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 Thermal characteristics . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 8 Clock and digital output timing . . . . . . . . . . . . . 9 SPI timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Typical characteristics . . . . . . . . . . . . . . . . . . 12 Application information. . . . . . . . . . . . . . . . . . 13 Device control . . . . . . . . . . . . . . . . . . . . . . . . . 13 SPI and Pin control modes . . . . . . . . . . . . . . . 13 Operating mode selection. . . . . . . . . . . . . . . . 14 Selecting the output data standard . . . . . . . . . 14 Selecting the output data format. . . . . . . . . . . 14 Analog inputs . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input stage . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Transformer . . . . . . . . . . . . . . . . . . . . . . . . . . 16 11.3 11.3.1 11.3.2 11.3.3 11.3.4 11.4 11.4.1 11.4.2 11.4.3 11.4.4 11.5 11.5.1 11.5.2 11.5.3 11.5.4 11.5.5 11.5.6 11.5.7 11.6 11.6.1 11.6.2 11.6.3 12 13 14 15 ADC1115S125 3 Product data sheet System reference and power management . . Internal/external references . . . . . . . . . . . . . . Programmable full-scale . . . . . . . . . . . . . . . . Common-mode output voltage (VO(cm)) . . . . . Biasing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Clock input . . . . . . . . . . . . . . . . . . . . . . . . . . . Drive modes . . . . . . . . . . . . . . . . . . . . . . . . . Equivalent input circuit . . . . . . . . . . . . . . . . . . Duty cycle stabilizer . . . . . . . . . . . . . . . . . . . . Clock input divider . . . . . . . . . . . . . . . . . . . . . Digital outputs . . . . . . . . . . . . . . . . . . . . . . . . Digital output buffers: CMOS mode . . . . . . . . Digital output buffers: LVDS DDR mode . . . . DAta Valid (DAV) output clock . . . . . . . . . . . . Out-of-Range (OTR) . . . . . . . . . . . . . . . . . . . Digital offset . . . . . . . . . . . . . . . . . . . . . . . . . . Test patterns . . . . . . . . . . . . . . . . . . . . . . . . . Output codes versus input voltage. . . . . . . . . Serial Peripheral Interface (SPI) . . . . . . . . . . Register description . . . . . . . . . . . . . . . . . . . . Default modes at start-up. . . . . . . . . . . . . . . . Register allocation map . . . . . . . . . . . . . . . . . Package outline. . . . . . . . . . . . . . . . . . . . . . . . Revision history . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 17 18 18 18 19 19 20 20 20 21 21 22 23 23 23 23 24 24 24 25 27 34 35 35 36 © IDT 2012. All rights reserved. Rev. 03 — 2 July 2012 36 of 36