AT25XE512C
512-Kbit, 1.65V Minimum
SPI Serial Flash Memory with Dual-Read Support
Features
Single 1.65V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3
Supports Dual Output Read
104MHz Maximum Operating Frequency
Clock-to-Output (tV) of 6 ns
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Uniform 256-Byte Page erase
Uniform 4-Kbyte Block Erase
Uniform 32-Kbyte Block Erase
Full Chip Erase
Hardware Controlled Locking of Protected Sectors via WP Pin
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Flexible Programming
Byte/Page Program (1 to 256 Bytes)
Fast Program and Erase Times
2ms Typical Page Program (256 Bytes) Time
50ms Typical 4-Kbyte Block Erase Time
400ms Typical 32-Kbyte Block Erase Time
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
200nA Ultra Deep Power Down current (Typical)
4.5µA Deep Power-Down Current (Typical)
25uA Standby current (Typical)
3.5mA Active Read Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Temperature Range:-10°C to +85°C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V)
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil)
8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)
8-lead TSSOP Package
DS-25XE512C–060C–11/2015
1.
Description
The Adesto® AT25XE512C is a highly optimized ultra-low energy serial interface Flash memory device designed for use in a wide
variety of high-volume low energy consumer and industrial applications. The AT25XE512C device has been optimized by design
to meet the needs of today's connected applications in the Internet of Things market space.
The granular Page Erase and Block Erase architecture allows the memory space to be used much more efficiently supporting
data storage and over the air updates. Key program code subroutines and data storage segments need to reside by themselves
in their own separate erase regions, and with a granular architecture the wasted and unused memory space that occurs with large
sectored and large block erase flash memory devices can be greatly reduced.
The resulting improvement to software efficiency contributes to reduced CPU / MCU overheads that translate to further reduce
the system energy usage levels. The device also contains a specialized OTP (One-Time Programmable) Security Register that
can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key
storage, etc. Specifically designed for use in many different systems, the AT25XE512C supports read, program, and erase
operations with a wide supply voltage range of 1.65V to 3.6V. No separate voltage is required for programming and erasing.
2.
Pin Descriptions and Pinouts
Table 2-1.
Symbol
CS
SCK
Pin Descriptions
Name and Function
CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in standby mode (not Deep Power-Down
mode), and the SO pin will be in a high-impedance state. When the device is deselected,
data will not be accepted on the SI pin.
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation
such as a program or erase cycle, the device will not enter the standby mode until the
completion of the operation.
SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the
flow of data to and from the device. Command, address, and input data present on the SI pin
is always latched in on the rising edge of SCK, while output data on the SO pin is always
clocked out on the falling edge of SCK.
Asserted
State
Type
Low
Input
-
Input
-
Input/Output
SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data
input including command and address sequences. Data on the SI pin is always latched in on
the rising edge of SCK.
SI (I/O0)
With the Dual-Output Read commands, the SI Pin becomes an output pin (I/O0) in
conjunction with other pins to allow two bits of data on (I/O1-0) to be clocked out on every
falling edge of SCK
To maintain consistency with the SPI nomenclature, the SI (I/O0) pin will be referenced as
the SI pin unless specifically addressing the Dual-I/O modes in which case it will be
referenced as I/O0
Data present on the SI pin will be ignored whenever the device is deselected (CS is
deasserted).
AT25XE512C
DS-25XE512C–060C–11/2015
2
Table 2-1.
Symbol
Pin Descriptions (Continued)
Name and Function
Asserted
State
Type
-
Input/Output
Low
Input
Low
Input
-
Power
-
Power
SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin
is always clocked out on the falling edge of SCK.
SO (I/O1)
With the Dual-Output Read commands, the SO Pin remains an output pin (I/O1) in
conjunction with other pins to allow two bits of data on (I/O1-0) to be clocked out on every
falling edge of SCK.
To maintain consistency with the SPI nomenclature, the SO (I/O1) pin will be referenced as
the SO pin unless specifically addressing the Dual-I/O modes in which case it will be
referenced as I/O1.
The SO pin will be in a high-impedance state whenever the device is deselected (CS is
deasserted).
WP
WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please
refer to “Protection Commands and Features” on page 12 for more details on protection
features and the WP pin.
The WP pin is internally pulled-high and may be left floating if hardware controlled protection
will not be used. However, it is recommended that the WP pin also be externally connected
to VCC whenever possible.
HOLD: The HOLD pin is used to temporarily pause serial communication without
deselecting or resetting the device. While the HOLD pin is asserted, transitions on the SCK
pin and data on the SI pin will be ignored, and the SO pin will be in a high-impedance state.
HOLD
The CS pin must be asserted, and the SCK pin must be in the low state in order for a
Hold condition to start. A Hold condition pauses serial communication only and does
not have an effect on internally self-timed operations such as a program or erase cycle.
Please refer to “Hold” on page 27 for additional details on the Hold operation.
The HOLD pin is internally pulled-high and may be left floating if the Hold function will not be
used. However, it is recommended that the HOLD pin also be externally connected to VCC
whenever possible.
DEVICE POWER SUPPLY: The VCC pin is used to supply the source voltage to the device.
VCC
GND
Operations at invalid VCC voltages may produce spurious results and should not be
attempted.
GROUND: The ground reference for the power supply. GND should be connected to the
system ground.
AT25XE512C
DS-25XE512C–060C–11/2015
3
Figure 2-1. 8-SOIC Top View
CS
SO
WP
GND
1
2
3
4
Figure 2-3. 8-UDFN (Top View)
8
7
6
5
VCC
HOLD
SCK
SI
8
7
6
5
VCC
HOLD
SCK
SI
CS
SO
WP
GND
1
8
2
7
3
6
4
5
VCC
HOLD
SCK
SI
Figure 2-2. 8-TSSOP Top View
CS
SO
WP
GND
3.
1
2
3
4
Block Diagram
Figure 3-1. Block Diagram
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