BCR08AM-12A

BCR08AM-12A Triac Low Power Use REJ03G0343-0200 Rev.2.00 Nov 30, 2007 Features • • • • IT (RMS) : 0.8 A VDRM : 600 V IRGTI, IRGT III : 5 mA Planar Passivation Type Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 13 1 2 Applications Electric fan, air cleaner, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V REJ03G0343-0200 Page 1 of 6 Rev.2.00 Nov 30, 2007 BCR08AM-12A Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Ratings 0.8 8 0.26 1 0.1 6 0.5 – 40 to +125 – 40 to +125 0.23 Unit A A A2s W W V A °C °C g Conditions Commercial frequency, sine full wave 360° conduction, Tc = 56°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage ΙΙ ΙΙΙ ΙΙ ΙΙΙ Symbol IDRM VTM VRGTΙ VRGTΙΙΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — 0.1 — 0.5 Typ. — — — — — — — — — Max. 1.0 2.0 2.0 2.0 5 5 — 60 — Unit mA V V V mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 1.2 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 0.4 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c REJ03G0343-0200 Page 2 of 6 Rev.2.00 Nov 30, 2007 BCR08AM-12A Performance Curves Maximum On-State Characteristics 101 7 5 10 Rated Surge On-State Current Tj = 25°C Surge On-State Current (A) 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) 3 2 100 7 5 3 2 10–1 1.0 1.5 2.0 2.5 3.0 3.5 4.0 On-State Voltage (V) Conduction Time (Cycles at 60Hz) 3 2 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics ( II and III) Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 –60 –40 –20 VGM = 6V VGT Typical Example PGM = 1W PG(AV) = 0.1W IGM = 0.5A Gate Voltage (V) IRGT I, IRGT III VGD = 0.1V 3 5 7 101 2 3 5 7 10 2 2 3 5 7 103 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Maximum Transient Thermal Impedance Characteristics (Junction to case, Junction to ambient) Transient Thermal Impedance (°C/W) 2 3 4 5 310 2 3 5 7 10 2 3 5 7 10 2 3 5 7 10 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 –60 –40 –20 Typical Example 2 Junction to ambient 102 7 5 3 2 101 7 5 3 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Junction to case 0 20 40 60 80 100 120 140 Junction Temperature (°C) Conduction Time (Cycles at 60Hz) REJ03G0343-0200 Page 3 of 6 Rev.2.00 Nov 30, 2007 BCR08AM-12A Allowable Case Temperature vs. RMS On-State Current 160 Maximum On-State Power Dissipation 2.0 On-State Power Dissipation (W) 1.8 1.6 360° Conduction 1.4 Resistive, 1.2 inductive loads 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Case Temperature (°C) 140 120 100 80 60 40 Curves apply regardless of conduction angle 360° Conduction 20 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RMS On-State Current (A) RMS On-State Current (A) 160 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 105 7 5 3 2 7 5 3 2 7 5 3 2 –60 –40 –20 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 104 103 360° Conduction 20 Resistive, inductive loads 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 102 0 20 40 60 80 100 120 140 RMS On-State Current (A) Junction Temperature (°C) Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 3 2 Latching Current vs. Junction Temperature 102 7 5 3 2 Typical Example Distribution T2+, G– Typical Example Latching Current (mA) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 T2–, G– Typical Example 0 40 80 120 160 101 –60 –40 –20 0 20 40 60 80 100 120 140 –40 Junction Temperature (°C) Junction Temperature (°C) REJ03G0343-0200 Page 4 of 6 Rev.2.00 Nov 30, 2007 BCR08AM-12A Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 160 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 Typical Example Tj = 125°C I Quadrant 100 80 60 40 III Quadrant 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 3 2 102 7 5 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Commutation Characteristics Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 101 7 5 3 2 100 7 5 3 2 10–1 10–1 Minimum Characteristics Value Typical Example Tj = 125°C IT = 1A τ = 500µs VD = 200V Typical Example IRGT I IRGT III III Quadrant I Quadrant 2 3 5 7 100 2 3 5 7 101 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω 6V V A 330Ω 6V V A 330Ω Test Procedure II Test Procedure III REJ03G0343-0200 Page 5 of 6 Rev.2.00 Nov 30, 2007 BCR08AM-12A Package Dimensions Package Name TO-92* JEITA Package Code SC-43A RENESAS Code PRSS0003EA-A Previous Code  MASS[Typ.] 0.23g Unit: mm φ5.0Max 4.4 1.25 1.25 Circumscribed circle φ0.7 1.1 11.5Min 5.0Max Order Code Lead form Straight type Lead form Form A8 Standard packing Vinyl sack Vinyl sack Taping Quantity 500 500 2000 Standard order code Type name Type name – Lead forming code Type name – TB Standard order code example BCR08AM-12A BCR08AM-12A-A6 BCR08AM-12A-TB Note : Please confirm the specification about the shipping in detail. REJ03G0343-0200 Page 6 of 6 Rev.2.00 Nov 30, 2007 3.6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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