BCR08AS

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 1 0.8 MIN 2 3 0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL 0.4 +0.03 –0.05 • • • • IT (RMS) ..................................................................... 0.8A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # .............................................. 5mA IFGT # ..................................................................... 10mA 3 1 SOT-89 APPLICATION Hybrid IC, solid state relay, control of household equipment such as electric fan · washing machine, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage ✽1 Non-repetitive peak off-state voltage ✽1 Voltage class 12 (marked “BF”) 600 720 Unit V V 3.9±0.3 Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave 360° conduction, Ta=40°C ✽3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 0.8 8 0.26 1 0.1 6 1 –40 ~ +125 –40 ~ +125 48 Unit A A A2s W W V A °C °C mg ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # VFGT # IFGT ! IRGT ! IRGT # IFGT # VGD Rth (j-a) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage ✽4 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage ✽2 @ # $ ! Gate trigger current ✽2 @ # $ Tj=125°C, VD=1/2VDRM Junction to case ✽3 Tj=125°C Test conditions Tj=125°C, VDRM applied Tc=25°C, ITM=1.2A, Instantaneous measurement Min. — — — Typ. — — — — — — — — — — — — — Max. 1.0 2.0 2.0 2.0 2.0 2.0 5 5 5 10 — 65 — Unit mA V V V V V mA mA mA mA V °C/ W V/µs Tj=25°C, VD=6V, RL=6Ω, RG=330Ω — — — — Tj=25°C, VD=6V, RL=6Ω, RG=330Ω — — — 0.1 — 0.5 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder. ✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125°C 2. Rate of decay of on-state commutating current (di/dt)c=–0.4A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 101 7 5 4 3 2 Tj = 125°C 100 7 5 4 3 2 10–1 0 1 2 8 6 4 Tj = 25°C 2 0 100 3 4 5 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE IFGT III IFGT I IRGT III IRGT I GATE VOLTAGE (V) 101 7 5 3 2 100 7 5 3 2 PGM = 1W PG(AV) = 0.1W VGT IGM = 1A IFGT I, IRGT I, IRGT III IFGT III VGD = 0.2V 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 102 7 5 3 2 VGM = 10V GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TO AMBIENT VFGT I VFGT III JUNCTION TO CASE VRGT I VRGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT CURVES APPLY REGARDLESS 140 OF CONDUCTION ANGLE NATURAL CONVECTION RESISTIVE, 120 INDUCTIVE 100 LOADS 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 RMS ON-STATE CURRENT (A) 160 2.0 CASE TEMPERATURE (°C) 1.6 1.2 0.8 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 0.4 0 0 0.4 0.8 1.2 1.6 2.0 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 103 7 5 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 100 (%) 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25 °C) HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25 °C) LACHING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) DISTRIBUTION + T2 , G – TYPICAL EXAMPLE LACHING CURRENT (mA) + T2 , G +   TYPICAL – T2 , G –  EXAMPLE – T2 , G +   10–1 –40 0 40 80 120 160 JUNCTION TEMPERATURE (°C) 100 (%) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µs) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25 °C) COMMUTATION CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 MINIMUM CHARACTERISTICS VALUE 2 3 TYPICAL EXAMPLE Tj = 125°C IT = 1A τ = 500µs VD = 200V f = 3Hz III QUADRANT BREAKOVER VOLTAGE (dv/dt = xV/ µ s ) BREAKOVER VOLTAGE (dv/dt = 1V/ µ s ) 120 100 80 60 40 20 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) III QUADRANT I QUADRANT I QUADRANT 10–1 10–1 5 7 100 2 3 5 7 101 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 100 (%) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V V A RG 6V V A RG 102 7 IRGT I IRGT III IFGT I 5 IFGT III 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6Ω 6V V A RG 6V V A RG GATE CURRENT PULSE WIDTH (µs) TEST PROCEDURE 3 TEST PROCEDURE 4 Mar. 2002