BCR10PM-12LD-A8

BCR10PM-12LD Triac Medium Power Use REJ03G1561-0100 Rev.1.00 Jul 06, 2007 Features • • • • IT (RMS) : 10 A VDRM : 600 V IFGTI , IRGTI, IRGTIII : 50 mA Viso : 2000 V • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Type Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) 2 3 1 1 23 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal Applications Motor control, Heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltage Note1 Symbol VDRM VDSM Voltage class 12 600 700 Unit V V REJ03G1561-0100 Page 1 of 7 Rev.1.00 Jul 06, 2007 BCR10PM-12LD Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 10 60 15 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 82°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2 — 10 Typ. — — — — — — — — — — — Max. 2.0 1.8 1.5 1.5 1.5 50 50 50 — 4.6 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 15 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 5 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c REJ03G1561-0100 Page 2 of 7 Rev.1.00 Jul 06, 2007 BCR10PM-12LD Performance Curves Maximum On-State Characteristics 102 7 5 Rated Surge On-State Current 80 Surge On-State Current (A) Tj = 25°C On-State Current (A) 3 2 101 7 5 3 2 100 7 5 3 2 10-1 70 60 50 40 30 20 10 0 100 2 3 5 7 101 2 3 5 7 102 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 On-State Voltage (V) Conduction Time (Cycles at 60 Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101 23 5 7102 23 5 7 103 VGM = 10 V PGM =5 W VGT = 1.5 V Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 IFGTI IRGTIII Typical Example Gate Voltage (V) PG(AV) = 0.5 W IFGT I IRGT II IRGT III IGM = 2 A IRGTI VGD = 0.2 V 23 5 7 104 101 -60 -40 -20 0 20 40 60 80 100120140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10-1 2 3 5 7 100 23 5 7 101 23 5 7 102 102 2 3 5 7 103 2 3 5 7 104 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60 Hz) REJ03G1561-0100 Page 3 of 7 Rev.1.00 Jul 06, 2007 BCR10PM-12LD Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 16 Transient Thermal Impedance (°C/W) 103 No Fins On-State Power Dissipation (W) 7 5 3 2 102 7 5 3 2 14 12 360° Conduction Resistive, 10 inductive loads 8 6 4 2 0 0 2 4 6 8 10 12 14 101 7 5 3 2 100 7 5 3 2 10-1 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 Conduction Time (Cycles at 60 Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 140 Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are black painted aluminum and greased 120 100 80 60 40 Ambient Temperature (°C) Curves apply regardless of conduction angle 140 120 Case Temperature (°C) 120 × 120 × t2.3 100 80 60 Curves apply regardless of 100 × 100 × t2.3 60 × 60 × t2.3 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 40 conduction angle 20 inductive loads 0 Natural convection Resistive, 10 12 14 16 0 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 RMS On-State Current (A) Junction Temperature (°C) REJ03G1561-0100 Page 4 of 7 Rev.1.00 Jul 06, 2007 BCR10PM-12LD Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Latching Current vs. Junction Temperature 103 7 5 Typical Example Distribution Latching Current (mA) 3 2 102 7 5 3 2 101 7 5 3 2 T2+, G– Typical Example T2+, G+ Typical Example T2–, G– 0 20 40 60 80 100 120 140 160 100 -60 -40 -20 Junction Temperature (°C) Junction Temperature (°C) 160 Typical Example Breakover Voltage (dv/dt = x V/ms) × 100 (%) Breakover Voltage (dv/dt = 1 V/ms) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 160 140 120 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Typical Example Tj = 125°C III Quadrant 100 80 60 40 20 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage (dv/dt = x V/µs) × 100 (%) Breakover Voltage (dv/dt = 1 V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) 160 140 120 100 80 60 40 20 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 Commutation Characteristics (Tj = 125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 101 7 5 3 2 100 7 100 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C III Quadrant Typical Example Tj = 125°C IT = 4 A τ = 500 µs VD = 200 V f = 3 Hz I Quadrant Minimum Characteristics Value III Quadrant I Quadrant 2 3 5 7 101 2 3 5 7 102 Rate of Rise of Off-State Voltage (V/µs) Rate of Decay of On-State Commutating Current (A/ms) REJ03G1561-0100 Page 5 of 7 Rev.1.00 Jul 06, 2007 BCR10PM-12LD Gate Trigger Current vs. Gate Current Pulse Width Commutation Characteristics (Tj = 150°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 101 7 5 3 2 Main Voltage (dv/dt)c Main Current IT τ Time VD (di/dt)c Time Typical Example Tj = 150°C IT = 4 A τ = 500 µs VD = 200 V f = 3 Hz 103 7 5 3 2 102 7 5 3 2 101 100 Typical Example IRGTIII IRGTI IFGTI I Quadrant III Quadrant 100 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω 6V V A 330 Ω 6V V A 330 Ω Test Procedure I 6Ω Test Procedure II 6V V A 330 Ω Test Procedure III REJ03G1561-0100 Page 6 of 7 Rev.1.00 Jul 06, 2007 BCR10PM-12LD Package Dimensions Package Name TO-220F JEITA Package Code SC-67 RENESAS Code PRSS0003AA-A Previous Code  MASS[Typ.] 2.0g Unit: mm 10.5Max 5.2 2.8 5.0 1.2 17 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 2.54 8.5 0.5 2.6 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Standard order code example BCR10PM-12LD BCR10PM-12LD-A8 Note : Please confirm the specification about the shipping in detail. REJ03G1561-0100 Page 7 of 7 Rev.1.00 Jul 06, 2007 4.5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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