BCR10PM

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR10PM OUTLINE DRAWING 10.5 MAX 5.2 1.2 Dimensions in mm 2.8 17 5.0 TYPE NAME VOLTAGE CLASS φ3.2±0.2 3.6 1.3 MAX 13.5 MIN 0.8 2.54 2.54 8.5 0.5 2.6 • • • • • IT (RMS) ...................................................................... 10A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # ............................................ 20mA Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 123 2 ∗ Measurement point of case temperature 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Switching mode power supply, light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet, small motor control, copying machine, electric tool, solenoid drivers, other general purpose control applications MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage ✽1 Non-repetitive peak off-state voltage ✽1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-state current Surge on-state current I2t for fusing 4.5 Conditions Commercial power frequency, sine full wave 360° conduction, Tc=85°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 10 100 41.6 5 0.5 10 2 –40 ~ +125 –40 ~ +125 Unit A A A2s W W V A °C °C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case 2.0 2000 ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage ✽4 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage ✽2 @ # ! Gate trigger current ✽2 @ # Tj=125°C, VD=1/2VDRM Junction to case ✽3 Tj=125°C Test conditions Tj=125°C, VDRM applied Tc=25°C, ITM=15A, Instantaneous measurement Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Min. — — — — — — Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 20 20 20 — 3.5 — Unit mA V V V V mA mA mA V °C/ W V/µs Tj=25°C, VD=6V, RL=6Ω, RG=330Ω — — 0.2 — 10 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. ✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125°C 2. Rate of decay of on-state commutating current (di/dt)c=–5.0A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 7 5 3 2 Tj = 125°C 101 7 5 3 2 100 7 5 3 2 Tj = 25°C 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE VOLTAGE (V) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 102 7 5 3 2 VGM = 10V 101 7 5 3 2 100 7 5 3 2 VGD = 0.2V IRGT I IFGT I, IRGT III 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) PGM = 5W PG(AV) = 0.5W VGT = 1.5V IGM = 2A 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IRGT I, IRGT III IFGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 100 (%) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) 103 7 5 4 3 2 102 7 5 4 3 2 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) MAXIMUM ON-STATE POWER DISSIPATION TRANSIENT THERMAL IMPEDANCE (°C/W) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 NO FINS ON-STATE POWER DISSIPATION (W) 103 16 14 12 360° CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 102 101 100 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (°C) 140 120 100 80 60 AMBIENT TEMPERATURE (°C) CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 4 2 6 0 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 4 2 6 0 8 10 12 14 16 8 10 12 14 16 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25 °C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 LACHING CURRENT VS. JUNCTION TEMPERATURE 100 (%) LACHING CURRENT (mA) DISTRIBUTION HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25 °C) + T2 , G– TYPICAL EXAMPLE 100 –40 + T2 , G+  TYPICAL  – T2 , G–  EXAMPLE 0 40 80 120 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 BREAKOVER VOLTAGE (dv/dt = xV/ µ s ) BREAKOVER VOLTAGE (dv/dt = 1V/ µ s ) 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25 °C) 120 100 80 60 40 20 III QUADRANT I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µ s) COMMUTATION CHARACTERISTICS 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 7 5 3 2 101 7 5 3 2 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD MINIMUM CHARACTERISTICS VALUE III QUADRANT 23 5 7 101 I QUADRANT 100 7 100 23 5 7 102 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) TYPICAL EXAMPLE Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A/ms) GATE CURRENT PULSE WIDTH (µ s) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 6V V A RG 6V V A RG TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR10PM OUTLINE DRAWING 10.5 MAX 5.2 1.2 Dimensions in mm 2.8 17 5.0 TYPE NAME VOLTAGE CLASS φ3.2±0.2 3.6 1.3 MAX 13.5 MIN 0.8 2.54 2.54 8.5 0.5 2.6 • • • • • IT (RMS) ...................................................................... 10A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # ............................................ 20mA Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 123 2 ∗ Measurement point of case temperature 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Switching mode power supply, light dimmer, electric flasher unit, hair drier, control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared kotatsu · carpet, small motor control, copying machine, electric tool, solenoid drivers, other general purpose control applications (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage ✽1 Non-repetitive peak off-state voltage ✽1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-state current Surge on-state current I2t for fusing 4.5 Conditions Commercial power frequency, sine full wave 360° conduction, Tc=110°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 10 100 41.6 5 0.5 10 2 –40 ~ +150 –40 ~ +150 Unit A A A2s W W V A °C °C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case 2.0 2000 ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage ✽4 Parameter Repetitive peak off-state current On-state voltage ! Gate trigger voltage ✽2 @ # ! Gate trigger current ✽2 @ # Test conditions Tj=150°C, VDRM applied Tc=25°C, ITM=15A, Instantaneous measurement Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Min. — — — — — — Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 20 20 20 — 3.5 — Unit mA V V V V mA mA mA V °C/ W V/µs Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Tj=125°C/150°C, VD=1/2VDRM Junction to case ✽3 Tj=125°C/150°C — — 0.2/0.1 — 10/1 ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. ✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions Commutating voltage and current waveforms (inductive load) 1. Junction temperature Tj=125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c=–5.0A/ms 3. Peak off-state voltage VD=400V SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c TIME TIME TIME VD PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 ON-STATE CURRENT (A) 7 5 3 2 RATED SURGE ON-STATE CURRENT 100 SURGE ON-STATE CURRENT (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 Tj = 150°C 101 7 5 3 2 Tj = 25°C 100 7 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 5 3 2 VGM = 10V 103 7 5 3 2 TYPICAL EXAMPLE GATE VOLTAGE (V) PG(AV) = 0.5W VGT = 1.5V GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 101 7 5 3 2 100 7 5 3 2 PGM = 5W IGM = 2A IRGT I, IRGT III 102 7 5 3 2 IFGT I 10–1 7 VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) IRGT I IFGT I, IRGT III 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) 103 7 5 4 3 2 102 7 5 4 3 2 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) MAXIMUM ON-STATE POWER DISSIPATION TRANSIENT THERMAL IMPEDANCE (°C/W) 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 NO FINS ON-STATE POWER DISSIPATION (W) 103 16 14 12 360° CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 102 101 100 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (°C) AMBIENT TEMPERATURE (°C) 140 120 100 80 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF 120 CONDUCTION 100 ANGLE 80 60 RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 2 6 0 4 120 120 t2.3 100 100 t2.3 60 60 t2.3 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 2 6 0 4 60 8 10 12 14 16 8 10 12 14 16 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25 °C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION 140 NO FINS,CURVES APPLY REGARDLESS 120 OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE 100 LOADS 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 106 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TYPICAL EXAMPLE 105 104 103 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE LACHING CURRENT (mA) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 (%) DISTRIBUTION HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25 °C) + T2 , G – TYPICAL EXAMPLE 100 –40 + T2 , G+  TYPICAL  – T2 , G–  EXAMPLE 0 40 80 120 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125°C) 160 140 TYPICAL EXAMPLE Tj = 125°C BREAKOVER VOLTAGE (dv/dt = xV/ µ s ) BREAKOVER VOLTAGE (dv/dt = 1V/ µ s ) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25 °C) 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 120 100 80 60 40 20 III QUADRANT I QUADRANT 0 1 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10 RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) 100 (%) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µ s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150°C) 160 140 TYPICAL EXAMPLE Tj = 150°C COMMUTATION CHARACTERISTICS (Tj = 125°C) 7 5 3 2 101 7 5 3 2 100 70 10 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD BREAKOVER VOLTAGE (dv/dt = xV/ µ s ) BREAKOVER VOLTAGE (dv/dt = 1V/ µ s ) 120 100 80 60 40 20 I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µ s) III QUADRANT TYPICAL EXAMPLE Tj = 125°C IT = 4 A τ = 500µs VD = 200V f = 3Hz I QUADRANT MINIMUM CHARACTERISTICS VALUE III QUADRANT 23 5 7 101 23 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/µ s) COMMUTATION CHARACTERISTICS (Tj = 150°C) 100 (%) 7 5 3 2 101 7 5 3 2 100 7 100 SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 TYPICAL EXAMPLE IFGT I IRGT I IRGT III I QUADRANT III QUADRANT MINIMUM CHARACTERISTICS VALUE 23 5 7 101 23 5 7 102 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) TYPICAL EXAMPLE Tj = 150°C IT = 4 A τ = 500µs VD = 200V f = 3Hz RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE CURRENT PULSE WIDTH (µ s) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR10PM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC LOAD 6V V A RG 6V V A RG C1 R1 C1 = 0.1~0.47µF R1 = 47~100Ω C0 R0 C0 = 0.1µF R0 = 100Ω TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Mar. 2002