Preliminary Datasheet
BCR16CS-16LB
R07DS0226EJ0200
Rev.2.00
Oct 19, 2015
800V-16A-Triac
Medium Power Use
Features
IT (RMS) : 16 A
VDRM : 800 V
IFGTI, IRGTI, IRGT III : 30 mA
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
1
2
2, 4
1.
2.
3.
4.
3
1
3
RENESAS Package code: PRSS0004AS-A
(Package name: TO-263)
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
RENESAS Package code: PRSS0004AR-A
(Package name: TO-262)
4
4
1 2 3
1 23
Applications
Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control,
solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Symbol
VDRM
VDSM
Voltage class
16
800
960
Unit
V
V
Page 1 of 9
BCR16CS-16LB
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
16
Unit
A
Surge on-state current
ITSM
160
A
60Hzsinewave 1 full cycle, peak value,
non-repetitive
I2t
106.5
A2 s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
5
0.5
10
2
– 40 to +150
– 40 to +150
1.3
W
W
V
A
C
C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency，sine full wave
360° conduction，Tc = 125CNote3
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 25 A,
Instantaneous measurement
Gate trigger voltageNote2
VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Gate trigger currentNote2
IFGT
IRGT
IRGT
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
1.4
V
C/W
Tj = 125C/150C, VD = 1/2 VDRM
Junction to caseNote3 Note4
(dv/dt)c
10/1
—
—
V/s
Tj = 125C/150C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote5
Notes: 2.
3.
4.
5.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured on the T2 tab.
The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 9
BCR16CS-16LB
Preliminary
Performance Curves
103
7
5
3
2
Tj = 150°C
101
7
5
3
2
Tj = 25°C
0.5
101
7
5
3
2
1.0
1.5
2.0
2.5
3.0
3.5
160
140
120
100
80
60
40
20
2 3 4 5 7 101
2 3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
VGM = 10V
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
VGT = 1.5V
100
7
5
3
2
10–1
7 IFGT I, IRGT I, IRGT III
VGD = 0.1V
5
1
2
10 2 3 5 7 10 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
180
0
100
4.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
3
2
Surge On-State Current (A)
200
102
7
5
3
2
100
Rated Surge On-State Current
103
7
5
4
3
2
102
7
5
4
3
2
Typical Example
IRGT III
IFGT I, IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7 103
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
Page 3 of 9
BCR16CS-16LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
35
140
30 360° Conduction
Resistive,
25 inductive loads
20
15
10
5
0
2
4
6
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0 2 4 6 8 10 12 14 16 18 20
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
140
120 × 120 × t2.3
120
100 × 100 × t2.3
100
80
60
120 Curves apply regardless
of conduction angle
100
RMS On-State Current (A)
160
Ambient Temperature (°C)
8 10 12 14 16 18 20
60 × 60 × t2.3
Curves apply
40 regardless of
conduction angle
20 Resistive, inductive loads
Natural convection
0
0 2 4 6 8 10 12 14 16 18 20
160
Ambient Temperature (°C)
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
40
Natural convection
No fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
5
3 Typical Example
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140160
Junction Temperature (°C)
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Page 4 of 9
BCR16CS-16LB
Preliminary
Breakover Voltage vs.
Junction Temperature
Distribution
T2+, G–
Typical Example
102
7
5
3
2
101
7
5
3 T +, G+
2
2
Typical Example
T2–, G–
100
–40
0
40
80
160
120
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
103
7
5
3
2
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Junction Temperature (°C)
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7 Minimum
Characteristics
5 Value
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
III Quadrant
3
2
I Quadrant
100
7
3
5 7 101
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Latching Current (mA)
Latching Current vs.
Junction Temperature
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
7
5
I Quadrant
3
2 Minimum
Characteristics
Value
100
7
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
3
5 7 101
III Quadrant
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 9
BCR16CS-16LB
Preliminary
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
330Ω
Test Procedure II
C0
R0
C1 = 0.1 to 0.47μF C0 = 0.1μF
R0 = 100Ω
R1 = 47 to 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Page 6 of 9
BCR16CS-16LB
Preliminary
Package Dimensions
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
MASS[Typ.]
1.30g
7.8
6.6
(1.5)
10.0
2.49 ± 0.2
0.2
0.1 –+ 0.1
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(1)
2.2
1.37 ± 0.2
2.54 ± 0.5
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 –+ 0.5
1.3 ± 0.2
Page 7 of 9
BCR16CS-16LB
Preliminary
Package Name
JEITA Package Code
RENESAS Code
Previous Code
MASS (Typ) [g]
TO-263
—
PRSS0004AS-A
TO-263A
1.4
Unit: mm
E
A
A
B
E1
L2
H
D
D1
L1
c2
c
2x b2
2x b
e
0.25 M A M B
Reference Dimensions in millimeters
Symbol
Nom
Max
4.20
4.60
A1
0.00
—
—
—
—
—
—
—
—
—
—
b
0.65
b2
1.12
c
0.381
c2
1.15
D
8.50
D1
6.90
E
10.05
E1
8.00
e
A1
L3
0° ~
8°
H
GAUGE
PLANE
Min
A
L
15.00
L
1.90
L1
—
—
L3
L4
0.95
1.42
0.737
1.40
9.10
7.50
10.65
8.80
2.54 BSC
H
L2
L4
0.255
—
—
—
—
15.60
2.50
1.70
1.78
0.25 BSC
4.78
—
5.28
Package Name
JEITA Package Code
RENESAS Code
Previous Code
MASS (Typ) [g]
TO-262
—
PRSS0004AR-A
TO-262A
1.4
Unit: mm
B
c1
L2
E
A
L1
H
D
A
L
b1
e
A1
b2
0.25 M A B
c2
Reference Dimensions in millimeters
Symbol
Min
Max
4.200 4.400 4.600
A1
2.050 2.400 2.750
b1
0.635 1.050 1.400
b2
0.640 0.750 0.880
c1
1.140 1.300 1.400
c2
0.330 0.500 0.600
D
8.500 9.250 9.650
E
9.650 10.000 10.370
e
H
L
L1
L2
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Nom
A
2.54 BSC
—
23.850
—
12.900 13.500 14.100
—
—
4.550 4.800
1.100 1.727
Page 8 of 9
BCR16CS-16LB
Preliminary
Ordering Information
Orderable Part Number
BCR16CS-16LB#BH0
BCR16CS-16LBT1#BH0
BCR16CS-16LBA1#BH0
BCR16CS-16LB#B00
BCR16CS16LBT11#B00
Package
Packing
TO-263
Tube
TO-263
Embossed Tape
TO-262
Tube
LDPAK(S)-(1) Tube
LDPAK(S)-(1) Embossed Tape
Quantity
50 pcs.
800 pcs.
50 pcs.
50 pcs.
1000 pcs.
Remark
Taping direction “T1”
Not Recommend for New Design
Not Recommend for New Design
Note : Please confirm the specification about the shipping in detail.
R07DS0226EJ0200 Rev.2.00
Oct 19, 2015
Page 9 of 9
Notice
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