Data Sheet
BCR16FM-14LJ
700V - 16A - Triac
R07DS0959EJ0400
Rev.4.00
May 31, 2018
Medium Power Use
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
• Viso: 2000V
IT (RMS) : 16 A
VDRM : 800 V (Tj=125C)
Tj: 150°C
IFGTI, IRGTI, IRGT III: 30 mA
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
RENESAS Package code: PRSS0003AP-A
(Package name: TO-220FPA)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
1 2
3
2 3
Application
Power supply, motor control, heater control, solid state relay, and other general purpose AC control applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state
voltageNote1
Symbol
Voltage class
Unit
Conditions
VDRM
14
800
V
Tj=125C
V
V
Tj=150C
VDSM
700
840
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
16
Unit
A
Surge on-state current
ITSM
160
A
I2 t
106.5
A2s
PGM
PG (AV)
5
0.5
W
W
Peak gate voltage
Peak gate current
VGM
IGM
10
2
V
A
Junction Temperature
Storage temperature
Tj
Tstg
–40 to +150
–40 to +150
C
C
Isolation voltage Note6
Viso
2000
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Conditions
Commercial frequency, sine full wave
360conduction,
Tc = 87C (#BB0, #BH0)Note2
Tc = 81C (#BG0)Note2
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Ta=25C, AC 1 minute,
T1 • T2 • G terminal to case
Notes: 1. Gate open.
2. Please refer to the Ordering Information.
R07DS0959EJ0400 Rev.4.00
May 31, 2018
Page 1 of 8
BCR16FM-14LJ
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote3
Gate trigger curentNote3
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote5
Notes: 3.
4.
5.
6.
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
VFGT
VRGT
—
—
—
—
1.5
1.5
V
V
VRGT
—
—
1.5
V
IFGT
—
—
30
mA
IRGT
IRGT
—
—
—
—
30
30
mA
mA
VGD
0.2
0.1
—
—
—
—
V
V
Rth (j-c)
—
—
3.5
C/W
Junction to caseNote4
(#BB0, #BH0)Note2
—
—
3.8
C/W
Junction to caseNote4
(#BG0)Note2
10
1
—
—
—
—
V/s
V/s
Tj = 125C
Tj = 150C
(dv/dt)c
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 25 A,
instantaneous measurement
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0 A/ms
Main Current
(di/dt)c
Time
3. Peak off-state voltage
VD = 400 V
Main Voltage
(dv/dt)c
R07DS0959EJ0400 Rev.4.00
May 31, 2018
Time
VD
Page 2 of 8
BCR16FM-14LJ
Data Sheet
Performance Curves
Maximum On-State Characteristics
200
Surge On-State Current (A)
Tj = 25°C
102
101
100
0
1
2
3
80
40
0
100
4
101
102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PG(AV) = 0.5W
PGM = 5W
IGM = 2A
VGT = 1.5V
100
IFGT I IRGT I, IRGT III
101
102
VGD = 0.1V
103
104
103
Typical Example
IRGT I
102
IFGT I
IRGT III
101
- 40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
102
101
- 40
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
120
Conduction Time (Cycles at 60Hz)
101
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
160
On-State Voltage (V)
VGM = 10V
10- 1
Rated Surge On-State Current
0
40
80
120
Junction Temperature (°C)
R07DS0959EJ0400 Rev.4.00
May 31, 2018
160
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
On-State Current (A)
103
103
Typical Example
IRGT III
IRGT I
102
IFGT I
101 0
10
101
102
Gate Current Pulse Width (s)
Page 3 of 8
BCR16FM-14LJ
Data Sheet
103
#BB0,#BH0
#BG0
4
3
2
1
0 -1
10
100
101
102
103
No Fins
102
101
100
10- 1
101
102
103
104
105
Conduction Time (Cycles at 60Hz)
Conduction Time (Cycles at 60Hz)
Maximum On-State Power Dissipation
Allowable Case Temperature vs.
RMS On-State Current
160
35
140
30
Case Temperature (°C)
40
360°Conduction
Resistive,
inductive loads
25
20
15
10
5
0
0
4
8
12
16
20
Curves apply regardless
of conduction angle
120
100
#BB0,#BH0
#BG0
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
4
8
12
16
20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
104
Transient Thermal Impedance (°C/W)
102
5
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
All fins are black painted
aluminum and greased
#BB0,#BH0
#BG0
140
120
100×100×t2.3
100
60×60×t2.3
80
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
4
8
12
16
RMS On-State Current (A)
R07DS0959EJ0400 Rev.4.00
May 31, 2018
20
160
Ambient Temperature (°C)
On-State Power Dissipation (W)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Page 4 of 8
BCR16FM-14LJ
Data Sheet
Latching Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
102
I Quadrant
Typical Example
0
40
80
120
0
40
80
120
160
Breakover Voltage vs.
Junction Temperature
Repetitive Peak Off-State Current vs.
Junction Temperature
Typical Example
120
100
80
60
40
20
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/s)
× 100 (%)
Breakover Voltage (dv/dt = 1V/s)
T2+,G+ T2- ,GTypical Example
Junction Temperature (°C)
140
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
40
I Quadrant
20
0
101
101
Junction Temperature (°C)
160
0
- 40
T2+,G Typical Example
102
100
- 40
160
102
103
104
Rate of Rise of Off-State Voltage (V/s)
R07DS0959EJ0400 Rev.4.00
May 31, 2018
Repetitive Peak Off-State Current (Tj = t°C)
×100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
100
- 40
Distribution
Latching Current (mA)
III Quadrant
Typical Example
101
VD=12V
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
103
Breakover Voltage (dv/dt = xV/s)
× 100 (%)
Breakover Voltage (dv/dt = 1V/s)
Holding Current (mA)
Distribution
106
Typical Example
105
104
103
102
- 40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
160
Typical Example
Tj = 150°C
140
120
III Quadrant
100
80
60
40
I Quadrant
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/s)
Page 5 of 8
BCR16FM-14LJ
Data Sheet
Commutation Characteristics (Tj = 125°C)
102
Typical Example
Tj = 125°C
IT = 4 A
t = 500 s
VD = 200 V
f = 3 Hz
Critical Rate of Rise of Off-State
Commutating Voltage (V/s)
Critical Rate of Rise of Off-State
Commutating Voltage (V/s)
102
Commutation Characteristics (Tj = 150°C)
III Quadrant
101
Minimum
Value
Main Voltage
(dv/dt)c
Main Current
Time
VD
I Quadrant
(di/dt)c
IT
t
100
Time
100
101
Main Current
IT
VD
(di/dt)c
t
Time
Typical Example
Tj = 1
150°C
IT = 4 A
t = 500 s
VD = 200 V
f = 3 Hz
I Quadrant
III Quadrant
Minimum
Value
101
100
102
Time
101
100
102
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6
Main Voltage
(dv/dt)c
6
Recommended peripheral components for Triac
Load
C1
A
6V
330
V
Test Procedure I
A
6V
V
330
Test Procedure II
R1
C0
R0
C1 = 0.1 to 0.47 F C0 = 0.1 F
R1 = 47 to 100
R0 = 100
6
A
6V
V
330
Test Procedure III
R07DS0959EJ0400 Rev.4.00
May 31, 2018
Page 6 of 8
BCR16FM-14LJ
Data Sheet
Package Dimensions
Ordering code: #BH0, #BG0
JEITA Package Code
-
RENESAS Code
Previous Code
MASS (Typ) [g]
PRSS0003AP-A
TO-220FPA
1.65
Unit: mm
2.7±0.2
f 3.2±0.2
1.95±0.3
15.0±0.3
6.9±0.3
10.0±0.3
0.745±0.2
13.0±0.5
0.395±0.2
1.14±0.2
0.69±0.15
0.60 +0.19
- 0.11
2.54±0.25
3.2±0.2
4.5±0.2
2.54±0.25
R07DS0959EJ0400 Rev.4.00
May 31, 2018
Page 7 of 8
BCR16FM-14LJ
Data Sheet
Package Dimensions
Ordering code: #BB0
Package Name
TO-220FP
JEITA Package Code
RENESAS Code
PRSS0003AG-A
MASS[Typ.]
1.9g
Previous Code
10.16±0.20
2.54±0.20
6.68 ±0.20
3.3±0.2
1.28 ±0.30
3.18 ±0.20
15.87±0.20
f 3.18±0.10
12.98 ±0.30
Unit: mm
Max 1.47
2.76 ±0.20
0.80±0.20
0.50
4.7±0.2
5.08 ±0.20
Ordering Information
Orderable Part Number
BCR16FM-14LJ#BH0
Package
TO-220FPA
Quantity Note7
Remark
50 pcs./ tube Straight type
Status
Under Development
BCR16FM-14LJ#BH0
BCR16FM-14LJ#BG0
TO-220FPA
TO-220FPA
50 pcs./ tube
50 pcs./ tube
:Lead form type
Straight type
Mass Production
BCR16FM-14LJ#BG0
BCR16FM-14LJ#BB0
TO-220FPA
TO-220FP
50 pcs./ tube
50 pcs./ tube
:Lead form type
Straight type
EOL Candidate
Notes: 7. Please confirm the specification about the shipping in detail.
R07DS0959EJ0400 Rev.4.00
May 31, 2018
Page 8 of 8
Notice
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