BCR16PM-12LC

BCR16PM-12LC Triac Medium Power Use REJ03G1262-0200 Rev.2.00 Jul 28, 2006 Features • • • • IT (RMS) : 16 A VDRM : 600 V IFGTI, IRGTI, IRGTIII : 50 mA Viso : 1500 V • The product guaranteed maximum junction temperature 150°C. • Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-220F(2) ) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Motor control, heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 700 Unit V V Rev.2.00 Jul 28, 2006 page 1 of 7 BCR16PM-12LC Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 16 96 38 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 1500 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 60°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) Min. — — — — — — — — 0.2 — Typ. — — — — — — — — — — Max. 2.0 1.75 1.5 1.5 1.5 50 50 50 — 4.1 Unit mA V V V V mA mA mA V °C/W Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 25 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance (dv/dt)c 10 — — V/µs Tj = 125°C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 8 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c Rev.2.00 Jul 28, 2006 page 2 of 7 BCR16PM-12LC Performance Curves Maximum On-State Characteristics 10 7 Tj = 25°C 5 3 2 101 7 5 3 2 10 7 5 3 2 10 –1 0 2 Rated Surge On-State Current 120 Surge On-State Current (A) On-State Current (A) 100 80 60 40 20 00 10 1 2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 23 5 7 10 23 5 7 10 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Voltage (V) 102 7 5 3 2 10 7 5 3 2 10 7 5 3 2 0 1 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 IFGTI Typical Example IRGTIII VGM = 10 V PGM = 5 W PG(AV) = 0.5 W IGM = 2 A IFGT I IRGT I IRGT III VGD = 0.2 V VGT = 1.5 V IRGTI 10–1 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 101 –60 –40–20 0 20 40 60 80 100120 140160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 10 –60 –40–20 0 20 40 60 80 100120140160 1 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 10 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 2 3 5 7103 2 3 5 7 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60 Hz) Rev.2.00 Jul 28, 2006 page 3 of 7 BCR16PM-12LC Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 25 Transient Thermal Impedance (°C/W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 1 3 On-State Power Dissipation (W) 5 No Fins 20 360° Conduction Resistive, 15 inductive loads 10 5 0 0 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 2 3 4 2 4 6 8 10 12 14 16 18 20 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are black painted aluminum and greased 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 Ambient Temperature (°C) Case Temperature (°C) 140 120 100 80 60 40 140 120 100 80 60 Curves apply 360° Conduction 20 Resistive, inductive loads 40 conduction angle 20 inductive loads 0 0 Natural convection Resistive, regardless of 0 0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 –60 –40–20 0 20 40 60 80 100120140160 RMS On-State Current (A) Junction Temperature (°C) Rev.2.00 Jul 28, 2006 page 4 of 7 BCR16PM-12LC Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120140 160 Typical Example Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 T2+, G+ 5 Typical Example 3 2 10 0 Distribution Latching Current (mA) T2+, G– Typical Example T2–, G– Typical Example –60 –40 –20 0 20 40 60 80 100 120 140160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 160 Typical Example Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 160 140 120 100 80 60 40 20 01 2 3 4 10 2 3 5 710 2 3 5 710 2 3 5 710 I Quadrant Typical Example Tj = 125°C III Quadrant 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100120 140160 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) 160 140 120 100 80 60 40 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant Commutation Characteristics (Tj = 125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 10 7 5 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C III Quadrant III Quadrant I Quadrant Minimum Characteristics Value 3 2 Typical Example 10 70 10 0 Tj = 125°C, IT = 4 A τ = 500 µs, VD = 200 V f = 3 Hz 23 5 7 101 23 5 7 102 Rate of Rise of Off-State Voltage (V/µs) Rate of Decay of On-State Commutating Current (A/ms) Rev.2.00 Jul 28, 2006 page 5 of 7 BCR16PM-12LC Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102 IRGT III IRGT I IFGT I Typical Example Commutation Characteristics (Tj = 150°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 Typical Example Tj = 150°C 3 IT = 4 A 2 τ = 500 µs VD = 200 V 1 f = 3 Hz Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 10 7 5 3 2 III Quadrant I Quadrant 100 70 10 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω 6V V A 330 Ω 6V V A 330 Ω Test Procedure I 6Ω Test Procedure II 6V V A 330 Ω Test Procedure III Rev.2.00 Jul 28, 2006 page 6 of 7 BCR16PM-12LC Package Dimensions Package Name TO-220F(2) JEITA Package Code SC-67 RENESAS Code PRSS0003AA-B Previous Code  MASS[Typ.] 2.0g Unit: mm 10.5Max 5.2 2.8 5.0 1.2 17 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 2.54 8.5 0.5 2.6 Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR16PM-12LC BCR16PM-12LC-A8 Straight type Vinyl sack 100 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00 Jul 28, 2006 page 7 of 7 4.5 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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