BCR20AM-12LA

BCR20AM-12LA Triac Medium Power Use REJ03G0299-0300 Rev.3.00 Nov 30, 2007 Features • IT (RMS) : 20 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 1 12 3 Applications Vacuum cleaner, electric heater, light dimmer, copying machine, and controller for other motor and heater Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V REJ03G0299-0300 Page 1 of 6 Rev.3.00 Nov 30, 2007 BCR20AM-12LA Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbo l IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Ratings 20 200 167 5 0.5 10 2 – 40 to +125 – 40 to +125 2.0 Unit A A A2s W W V A °C °C g Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 109°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2 — 10 Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 30Note6 30Note6 30Note6 — 0.8 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 30 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Note4 Tj = 125°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –10 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c REJ03G0299-0300 Page 2 of 6 Rev.3.00 Nov 30, 2007 BCR20AM-12LA Performance Curves Maximum On-State Characteristics 103 7 5 3 2 10 7 5 3 2 101 7 5 3 2 0 2 Rated Surge On-State Current 240 Surge On-State Current (A) On-State Current (A) 200 160 120 80 40 00 10 1 2 Tj = 125°C Tj = 25°C 10 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 23 5 7 10 23 5 7 10 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Voltage (V) 10 7 5 3 2 1 2 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 10 7 5 3 2 101 7 5 3 2 10 7 5 3 2 0 2 Typical Example VGM = 10V PGM = 5W PG(AV) = 0.5W IGM = 2A 10 7 5 3 VGT = 1.5V 2 10 7 5 3 2 0 IFGT I IRGT I IRGT III IFGT I, IRGT I, IRGT III VGD = 0.2V 10–1 1 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 10–1 –60 –40–20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 10 –60 –40–20 0 20 40 60 80 100 120 140 1 3 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 –1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60Hz) REJ03G0299-0300 Page 3 of 6 Rev.3.00 Nov 30, 2007 BCR20AM-12LA Allowable Case Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle Maximum On-State Power Dissipation On-State Power Dissipation (W) 40 30 360° Conduction Resistive, inductive loads Case Temperature (°C) 140 120 100 80 60 40 20 10 360° Conduction 20 Resistive, inductive loads 0 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current 160 All fins are black painted aluminum and greased Natural convection 160 × 160 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Ambient Temperature (°C) 120 100 80 60 40 20 0 0 5 10 Ambient Temperature (°C) 140 140 120 100 80 60 40 20 0 0 15 20 25 30 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 105 7 5 3 2 104 7 5 3 2 10 7 5 3 2 10 –60 –40–20 0 20 40 60 80 100 120 140 2 3 Holding Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 Typical Example Typical Example Junction Temperature (°C) Junction Temperature (°C) REJ03G0299-0300 Page 4 of 6 Rev.3.00 Nov 30, 2007 BCR20AM-12LA Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 1 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature 160 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 Typical Example Distribution T2+, G– Typical Example Latching Current (mA) 10 7 5 3 T2+, G+ 2 T –, G– Typical Example 2 100 –60 –40–20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage 140 120 100 III Quadrant Commutation Characteristics Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 102 Typical Example 7 Tj = 125°C 5 I = 4A 3 τ = 500µs 2 VD = 200V f = 3Hz T Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 125°C 80 60 40 I Quadrant 101 7 5 3 2 100 7 3 III Quadrant Minimum Characteristics Value 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant 5 7 101 2 3 5 7 102 Rate of Rise of Off-State Voltage (V/µs) Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 10 7 5 3 2 IFGT I 102 7 5 3 2 101 0 10 3 Gate Trigger Characteristics Test Circuits 6Ω 6Ω Typical Example IRGT I IRGT III 6V V A 330Ω 6V V A 330Ω Test Procedure I 6Ω Test Procedure II 6V A V 330Ω 23 5 7 10 1 23 5 7 10 2 Gate Current Pulse Width (µs) Test Procedure III REJ03G0299-0300 Page 5 of 6 Rev.3.00 Nov 30, 2007 BCR20AM-12LA Package Dimensions Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code  MASS[Typ.] 2.0g Unit: mm 10.5Max 4.5 1.3 3.2 16Max 3.8Max 1.0 12.5Min 0.8 7.0 φ3.6 2.54 2.54 0.5 2.6 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Standard order code example BCR20AM-12LA BCR20AM-12LA-A8 Note : Please confirm the specification about the shipping in detail. REJ03G0299-0300 Page 6 of 6 Rev.3.00 Nov 30, 2007 4.5Max Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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