BCR20KM-12LA-A8

BCR20KM-12L Triac Medium Power Use REJ03G0329-0200 Rev.2.00 Nov.09.2004 Features • • • • IT (RMS) : 20 A VDRM : 600 V IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note5 Viso : 2000 V • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Rev.2.00, Nov.09.2004, page 1 of 6 BCR20KM-12L Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 20 200 167 5 0.5 10 2 – 40 to +125 – 40 to +125 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 85°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) Min. — — — — — — — — 0.2 — Typ. — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 30Note5 30Note5 30Note5 — 2.0 Unit mA V V V V mA mA mA V °C/W Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 30 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to caseNote3 Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance (dv/dt)c 10 — — V/µs Tj = 125°C Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. 5. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = –10 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Main Current Main Voltage (dv/dt)c Rev.2.00, Nov.09.2004, page 2 of 6 BCR20KM-12L Performance Curves Maximum On-State Characteristics 103 240 7 5 Rated Surge On-State Current Surge On-State Current (A) On-State Current (A) 3 2 200 160 120 80 40 0 100 102 7 5 3 2 Tj = 125°C 101 7 5 3 2 Tj = 25°C 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 2 3 5 7 101 2 3 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) 102 7 5 3 2 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 Typical Example Gate Voltage (V) VGM = 10V PGM = 5W PG(AV) = 0.5W IGM = 2A IFGT I, IRGT I, IRGT III VGD = 0.2V 101 7 5 3 2 VGT = 1.5V 102 7 5 3 2 IFGT I 100 7 5 3 2 IRGT I IRGT III 10–1 1 10 2 3 5 7102 2 3 5 7 103 2 3 5 7 104 101 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 2 3 5 7103 2 3 5 7 104 2 3 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60Hz) Rev.2.00, Nov.09.2004, page 3 of 6 BCR20KM-12L Allowable Case Temperature vs. RMS On-State Current 160 Maximum On-State Power Dissipation 40 On-State Power Dissipation (W) 30 360° Conduction Resistive, inductive loads 20 Case Temperature (°C) 15 20 25 30 Curves apply regardless 140 of conduction angle 120 100 80 60 40 10 0 0 5 10 360° Conduction 20 Resistive, inductive loads 0 0 5 10 15 20 25 30 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current 160 Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) 120 100 80 60 40 20 0 0 5 10 Ambient Temperature (°C) 140 All fins are black painted aluminum and greased Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 160 × 160 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 140 120 100 80 60 40 20 0 0 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 15 20 25 30 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Repetitive Peak Off-State Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 105 7 5 3 2 Holding Current vs. Junction Temperature 103 7 5 4 3 2 Typical Example Typical Example 104 7 5 3 2 102 7 5 4 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 101 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Junction Temperature (°C) Rev.2.00, Nov.09.2004, page 4 of 6 BCR20KM-12L Latching Current vs. Junction Temperature 103 7 5 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 Latching Current (mA) 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 T2+, G+ 2 T2–, G– Typical Example 100 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7104 Commutation Characteristics 102 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) Typical Example Tj = 125°C III Quadrant 7 (dv/dt)c 5 Main Current 3 2 IT τ Main Voltage Time VD (di/dt)c Time Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz 101 7 5 3 2 I Quadrant Minimum Characteristics Value III Quadrant 100 7 3 5 I Quadrant 7 101 7 102 2 3 5 Rate of Rise of Off-State Voltage (V/µs) Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 3 2 Gate Trigger Characteristics Test Circuits 6Ω 6Ω Typical Example IFGT I IRGT I IRGT III 6V V A 330Ω 6V V A 330Ω 102 7 5 3 2 Test Procedure I 6Ω Test Procedure II 101 0 10 6V 2 3 5 7 101 2 3 5 7 102 A V 330Ω Gate Current Pulse Width (µs) Test Procedure III Rev.2.00, Nov.09.2004, page 5 of 6 BCR20KM-12L Package Dimensions TO-220FN EIAJ Package Code  JEDEC Code  Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR20KM-12LA BCR20KM-12LA-A8 Straight type Plastic Magazine (Tube) 50 Type name +A Lead form Plastic Magazine (Tube) 50 Type name +A – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.09.2004, page 6 of 6 2.6 ± 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: (408) 382-7500, Fax: (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: (1628) 585-100, Fax: (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 2265-6688, Fax: 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: (2) 2715-2888, Fax: (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: (21) 6472-1001, Fax: (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: 6213-0200, Fax: 6278-8001 http://www.renesas.com © 2004. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .2.0