BCR25FR-12LB#BH0

BCR25FR-12LB#BH0

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    TO-220-3

  • 描述:

    TRIAC TO-220

  • 数据手册
  • 价格&库存
BCR25FR-12LB#BH0 数据手册
Data Sheet BCR25FR-12LB 600V - 25A - Triac R07DS1155EJ0200 Rev.2.00 May 31, 2018 Medium Power Use Features • • • • • Insulated Type • Planar Passivation Type • Viso: 2000 V IT (RMS): 25 A VDRM: 600 V Tj: 150 °C IFGTI, IRGTI, IRGT III: 50 mA Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 1 2 3 2 3 Application Contactless AC switch, electric heater control, Printer, Copier and other general purpose AC control applications. Maximum Ratings Parameter Symbol Voltage class Unit Repetitive peak off-state voltageNote1 VDRM 12 600 V Non-repetitive peak off-state voltageNote1 VDSM 720 V Symbol Ratings Unit Conditions RMS on-state current Parameter IT (RMS) 25 A Surge on-state current ITSM 250 A I2 t 313 A2s Commercial frequency, sine full wave 360 conduction, Tc = 62 C 50 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 50 Hz, surge on-state current PGM 5 W PG (AV) VGM 0.5 10 W V Peak gate current Junction Temperature IGM Tj 2 –40 to +150 A C Storage temperature Isolation voltage Note6 Tstg Viso –40 to +150 2000 C V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Ta=25C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. R07DS1155EJ0200 Rev.2.00 May 31, 2018 Page 1 of 8 BCR25FR-12LB Data Sheet Electrical Characteristics Parameter Repetitive peak off-state current Symbol IDRM Min. — — Typ. — — Max. 3.0 5.0 Unit mA mA VTM — — 1.5 V  VFGT — — 2.0 V   VRGT VRGT — — — — 2.0 2.0 V V   IFGT IRGT — — — — 50 50 mA mA  IRGT — — 50 mA VGD 0.2 — — V Tj = 125C, VD = 1/2 VDRM Rth (j-c) 0.1 — — — — 2.8 C/W Tj = 150C, VD = 1/2 VDRM Junction to caseNote3 10 1 — — — — On-state voltage Gate trigger voltageNote2 Gate trigger curentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutation voltageNote4 Notes: 2. 3. 4. 5. (dv/dt)c V/s Test conditions Tj = 125C, VDRM applied Tj = 150C, VDRM applied Tc = 25C, ITM = 40A, instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 125C Tj = 150C Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125 °C / 150 °C Commutating voltage and current waveforms (inductive load) Supply Voltage Time 2. Rate of decay of on-state commutating current (di/dt)c = – 13 A/ms Main Current (di/dt)c Time 3. Peak off-state voltage VD = 400 V Main Voltage (dv/dt)c R07DS1155EJ0200 Rev.2.00 May 31, 2018 Time VD Page 2 of 8 BCR25FR-12LB Data Sheet Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 102 Tj = 150°C Tj = 25°C 101 100 0.5 1.0 1.5 2.0 2.5 3.0 100 0 100 3.5 101 102 Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5W PGM = 5W IGM = 2A VGT = 2.0V 100 IFGT I IRGT I, IRGT III 101 102 VGD = 0.1V 103 104 103 102 Typical Example IFGT I IRGT I IRGT III 101 -40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 -40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) -1 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 200 Conduction Time (Cycles at 50Hz) 101 10 300 On-State Voltage (V) VGM = 10V Gate Voltage (V) Surge On-State Current (A) 400 0 40 80 120 Junction Temperature (°C) R07DS1155EJ0200 Rev.2.00 May 31, 2018 160 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) On-State Current (A) 103 103 IRGT III Typical Example IRGT I 102 IFGT I 101 0 10 101 102 Gate Current Pulse Width (s) Page 3 of 8 BCR25FR-12LB Data Sheet Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 102 4 103 104 105 3 2 1 0 10-1 100 101 102 Transient Thermal Impedance (°C/W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to case) 102 101 100 10- 1 101 102 103 104 105 Conduction Time (Cycles at 60Hz) Maximum On-State Power Dissipation Allowable Case Temperature vs. RMS On-State Current 160 20 10 360° Conduction Resistive, inductive loads 0 0 10 20 30 40 Curves apply regardless of conduction angle 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 10 20 30 40 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Tem perature vs. RMS On-State Current Allowable Ambient Tem perature vs. RMS On-State Current 160 160 160 160 t2.3 120 120 t2.3 100 100 t2.3 140 120 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection All fins are black painted aluminum and greased 100 80 60 40 20 0 0 Case Temperature (°C) 30 10 20 30 RMS On-State Current (A) R07DS1155EJ0200 Rev.2.00 May 31, 2018 40 Ambient Temperature (°C) On-State Power Dissipation (W) No Fins Conduction Time (Cycles at 60Hz) 40 Ambient Temperature (°C) 103 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 1 2 3 4 5 RMS On-State Current (A) Page 4 of 8 BCR25FR-12LB Data Sheet Latching Current vs. Junction Temperature Holding Current vs. Junction Temperature 103 103 VD=12V Distribution Latching Current (mA) III Quadrant Typical Example 102 101 I Quadrant Typical Example 0 40 80 120 0 40 80 120 160 Breakover Voltage vs. Junction Temperature Repetitive Peak Off-State Current vs. Junction Temperature Typical Example 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage (dv/dt = xV /s) × 100 (%) Breakover Voltage (dv/dt = 1V/s) T2-, GT2+, G+ Typical Typical Example Example Junction Temperature (°C) 102 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 I Quadrant 60 40 20 0 10 1 101 Junction Temperature (°C) 103 101 -40 T2+, GTypical Example 102 100 -40 160 10 2 10 3 10 4 Rate of Rise of Off-State Voltage (V/s) R07DS1155EJ0200 Rev.2.00 May 31, 2018 Repetitive Peak Off-State Current (Tj = t°C) ×100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 100 -40 Breakover Voltage (dv/dt = xV/s) × 100 (%) Breakover Voltage (dv/dt = 1V/s) Holding Current (mA) Distribution 106 Typical Example 105 104 103 102 -40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 150°C 140 120 III Quadrant 100 80 I Quadrant 60 40 20 0 10 1 10 2 10 3 10 4 Rate of Rise of Off-State Voltage (V/s) Page 5 of 8 BCR25FR-12LB Data Sheet Commutation Characteristics (Tj=125°C) Main Voltage (dv/dt)c Main Current Time VD (di/dt)c IT t Time 102 Typical Example Tj = 125°C IT = 4A t = 500 s VD = 200V f = 3Hz Critical Rate of Rise of Off-State Commutating Voltage (V/s) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 102 101 I Quadrant Minimum Characteristics Value III Quadrant 100 101 102 Main Voltage (dv/dt)c Main Current IT Time VD (di/dt)c t Time I Quadrant Typical Example Tj = 150°C IT = 4A t = 500 s VD = 200V f = 3Hz 101 III Quadrant Minimum Characteristics Value 100 100 103 Rate of Decay of On-State Commutating Current (A/ms) 101 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 6 Commutation Characteristics (Tj=150°C) 6 Recommended peripheral components for Triac Load C1 A 6V 330 V Test Procedure I A 6V V Test Procedure II 330 R1 C0 R0 C1 = 0.1 to 0.47 F C0 = 0.1 F R1 = 47 to 100 R0 = 100 6 A 6V V 330 Test Procedure III R07DS1155EJ0200 Rev.2.00 May 31, 2018 Page 6 of 8 BCR25FR-12LB Data Sheet Package Dimensions Ordering code: #BH0 JEITA Package Code - RENESAS Code Previous Code MASS (Typ) [g] PRSS0003AP-A TO-220FPA 1.65 Unit: mm 2.7±0.2 f 3.2±0.2 1.95±0.3 15.0±0.3 6.9±0.3 10.0±0.3 0.745±0.2 13.0±0.5 0.395±0.2 1.14±0.2 0.69±0.15 0.60 +0.19 - 0.11 2.54±0.25 3.2±0.2 4.5±0.2 2.54±0.25 R07DS1155EJ0200 Rev.2.00 May 31, 2018 Page 7 of 8 BCR25FR-12LB Data Sheet Package Dimensions Ordering code: #BB0 Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A MASS[Typ.] 1.9g Previous Code 10.16±0.20 2.54±0.20 6.68 ±0.20 3.3±0.2 1.28 ±0.30 3.18 ±0.20 15.87±0.20 f 3.18±0.10 12.98 ±0.30 Unit: mm Max 1.47 2.76 ±0.20 0.80±0.20 0.50 4.7±0.2 5.08 ±0.20 Ordering Information Orderable Part Number BCR25FR-12LB#BH0 Package TO-220FPA Quantity Note6 Remark 50 pcs./ tube Straight type Status Under Development BCR25FR-12LB#BH0 BCR25FR-12LB#BB0 TO-220FPA TO-220FP 50 pcs./ tube 50 pcs./ tube EOL Candidate :Lead form type Straight type Notes: 6. 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BCR25FR-12LB#BH0 价格&库存

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