BCR3AS-14B#B00

Data Sheet BCR3AS-14B R07DS1440EJ0200 (Previous: REJ03G1807-0100) Rev.2.00 May. 10, 2019 700V - 3A - Triac Low Power Use Features • IT (RMS) : 3 A • VDRM : 800 V (Tj = 125 °C) • IFGTI, IRGTI, IRGT III: 30 mA • Tj: 150 °C • Planar Passivation Type Outline RENESAS Package code: PRSS0004ZG-A (Package name: MP-3A) 2, 4 4 12 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 4. T2 Terminal 1 3 Application Small motor control, heater control, and other general purpose AC control applications. Maximum Ratings Parameter Symbol Voltage class Unit Conditions Repetitive peak off-state voltageNote1 VDRM 14 800 V Tj=125C VDSM 700 840 V V Tj=150C Non-repetitive peak off-state voltageNote1 Notes: 1. Gate open. Symbol Ratings Unit Conditions RMS on-state current Parameter IT (RMS) 3 A Surge on-state current ITSM 30 A I2 t 3.7 A2s Commercial frequency, sine full wave 360conduction, Tc = 133CNote3 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current I2t for fusing Peak gate power dissipation PGM 3 W PG (AV) VGM 0.3 6 W V Peak gate current Junction Temperature IGM Tj 0.5 –40 to +150 A C Storage temperature Tstg –40 to +150 C Average gate power dissipation Peak gate voltage R07DS1440EJ0200 Rev.2.00 May. 10, 2019 Page 1 of 7 BCR3AS-14B Data Sheet Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltageNote4 Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.6 Unit mA V   VFGT VRGT — — — — 1.5 1.5 V V  VRGT — — 1.5 V  IFGT — — 30 mA   IRGT IRGT — — — — 30 30 mA mA VGD 0.2 0.1 — — — — V Rth (j-c) (dv/dt)c — 5 — — 3.8 — C/W V/s 1 — — Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 4.5 A, instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C Tj = 150C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured on the T2 tab. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125°C/150°C Commutating voltage and current waveforms (inductive load) Supply Voltage Time 2. Rate of decay of on-state commutating current (di/dt)c = – 1.5 A/ms Main Current (di/dt)c Time 3. Peak off-state voltage VD = 400 V Main Voltage (dv/dt)c R07DS1440EJ0200 Rev.2.00 May. 10, 2019 Time VD Page 2 of 7 BCR3AS-14B Data Sheet Performance Curves Rated Surge On-State Current Maximum On-State Characteristics 40 Tj = 150°C 100 Tj = 25°C 10 -1 0 1 2 3 20 10 0 100 4 101 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PGM = 3W VGM = 6V VGT PG(AV) = 0.3W 100 IFGT I , IRGT I IRGT III IGM = 0.5A VGD = 0.1V 100 101 102 103 103 Typical Example IRGT III 102 IRGT I, IFGT I 101 - 40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 - 40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Conduction o Time (Cycles at 60Hz) 10-1 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 30 On-State Voltage (V) 101 Gate Voltage (V) Surge On-State Current (A) 101 0 40 80 120 Junction Temperature (°C) R07DS1440EJ0200 Rev.2.00 May. 10, 2019 160 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) On-State Current (A) 102 103 Typical Example IRGT III IRGT I IFGT I 102 101 100 101 102 Gate Current Pulse Width (s) Page 3 of 7 Data Sheet Maximum On-State Power Dissipation 4 8 On-State Power Dissipation (W) Maximum Transient Thermal Impedance Characteristics (Junction to case) 3 2 1 0 -1 10 100 101 102 7 6 5 4 3 2 1 0 0 1 2 3 4 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 140 Ambient Temperature (°C) 160 120 100 Curves apply regardless of conduction angle 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 2 160 360° Conduction Resistive, inductive loads Conduction Time (Cycles at 60Hz) 3 100 80 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) RMS On-State Current (A) Breakover Voltage vs. Junction Temperature Repetitive Peak Off-State Current vs. Junction Temperature Typical Example 140 120 100 80 60 40 20 0 - 40 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 120 0 4 0 40 80 120 Junction Temperature (°C) R07DS1440EJ0200 Rev.2.00 May. 10, 2019 160 Repetitive Peak Off-State Current (Tj = t°C) ×100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Case Temperature (°C) Transient Thermal Impedance (°C/W) BCR3AS-14B 106 Typical Example 105 104 103 102 - 40 0 40 80 120 160 Junction Temperature (°C) Page 4 of 7 BCR3AS-14B Data Sheet Holding Current vs. Junction Temperature 102 Latching Current vs. Junction Temperature 102 Distribution Latching Current (mA) Holding Current (mA) Typical Example 101 VD=12V 100 - 40 0 40 80 120 T2+, G T2- , GT2+, G+ 101 Distribution Typical Example 100 - 40 0 40 160 160 Typical Example 140 Tj = 125°C 120 100 III Quadrant 60 40 I Quadrant 20 0 1 10 102 103 104 Breakover Voltage (dv/dt = xV/s) × 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example 140 Tj = 150°C 120 100 80 III Quadrant 60 40 I Quadrant 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/s) Rate of Rise of Off-State Voltage (V/s) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 102 102 Typical Example Tj = 125°C IT = 4 A t = 500 s VD = 200 V f = 3 Hz Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT t Time 101 I Quadrant Minimum Value 100 100 III Quadrant 101 Rate of Decay of On-State Commutating Current (A/ms) R07DS1440EJ0200 Rev.2.00 May. 10, 2019 102 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Critical Rate of Rise of Off-State Commutating Voltage (V/s) Breakover Voltage (dv/dt = xV/s) × 100 (%) Breakover Voltage (dv/dt = 1V/s) Junction Temperature (°C) 80 Typical Example Tj = 150°C IT = 4 A t = 500 s VD = 200 V f = 3 Hz Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT t Time 101 III Quadrant I Quadrant 100 100 Minimum Value 101 102 Rate of Decay of On-State Commutating Current (A/ms) Page 5 of 7 BCR3AS-14B Data Sheet Gate Trigger Characteristics Test Circuits 6 6 Recommended peripheral components for Triac Load C1 A 6V 330 V Test Procedure I A 6V V Test Procedure II 330 R1 C0 R0 C1 = 0.1 to 0.47 F C0 = 0.1 F R1 = 47 to 100 R0 = 100  6 A 6V V 330 Test Procedure III R07DS1440EJ0200 Rev.2.00 May. 10, 2019 Page 6 of 7 BCR3AS-14B Data Sheet Package Dimensions Package Name: MP-3A RENESAS Code PRSS0004ZG-A 6.1±0.2 Unit: mm 2.3 0.5±0.2 2.5Min 1Max 0.76±0.2 MASS[Typ.] 0.32 g 0.1±0.1 1.4±0.2 6.6 5.3±0.2 Previous Code TMP3 10.4Max JEITA Package Code SC-63 1±0.2 Package Name MP-3A 0.76 0.5±0.2 1 2.3 2.3±0.2 Ordering Information Orderable Part Number BCR3AS-14B-T13#B00 BCR3AS-14B#B00 Note: Package Packing Note5 MP-3A MP-3A Embossed tape Tube Quantity Remark 3000 pcs. 75 pcs. 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