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BCR3FM-12RB#GA1

BCR3FM-12RB#GA1

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    TO-220-3

  • 描述:

    TRIAC 600V 3A TO220FP

  • 数据手册
  • 价格&库存
BCR3FM-12RB#GA1 数据手册
Data Sheet BCR3FM-12RB 600V - 3A - Triac R07DS0962EJ0201 Rev.2.01 Feb. 19, 2019 Medium Power Use Features • • • • • Insulated Type • Planar Passivation Type • Viso: 2000 V IT (RMS): 3 A VDRM: 600 V Tj: 150 °C IFGTI, IRGTI, IRGT III: 15 mA (10 mA) Note5 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) Ordering code #BB0 #FA0 Ordering code #BG0 #FG0 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 1 2 3 2 3 Application Electric rice cooker, electric pot, and other general purpose resistive loads. Maximum Ratings Parameter Symbol Voltage class Repetitive peak off-state voltageNote1 VDRM 12 600 Non-repetitive peak off-state voltageNote1 VDSM 720 Parameter Unit V V Symbol Ratings Unit Conditions RMS on-state current IT (RMS) 3 A Surge on-state current ITSM 30 A I2 t 3.7 A2s Commercial frequency, sine full wave 360 conduction, Tc = 136C (#BB0)Note2 Tc = 130C (#BG0, #FG0, #FA0)Note2 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current PGM 3 W PG (AV) VGM 0.3 6 W V Peak gate current Junction Temperature IGM Tj 0.5 –40 to +150 A C Storage temperature Isolation voltage Note6 Tstg Viso –40 to +150 2000 C V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Ta=25C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. 2. Please refer to the Ordering Information. R07DS0962EJ0201 Rev.2.01 Feb. 19, 2019 Page 1 of 8 BCR3FM-12RB Data Sheet Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote3 Gate trigger curentNote3 Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.5 Unit mA V   VFGT VRGT — — — — 1.5 1.5 V V  VRGT — — 1.5 V  IFGT — — 15 Note5 mA mA mA   Gate non-trigger voltage Thermal resistance Notes: 3. 4. 5. 6. Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 4.5A, instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  IRGT IRGT — — — — 15 Note5 VGD 0.2 0.1 — — — — V Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Rth (j-c) — — 4.0 C/W — — 5.2 C/W Junction to caseNote4 (#BB0)Note2 Junction to caseNote4 (#BG0, #FG0, #FA0)Note2 15 Note5 Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W. High sensitivity (IGT10mA) is also available. (IGT item:1) Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. R07DS0962EJ0201 Rev.2.01 Feb. 19, 2019 Page 2 of 8 BCR3FM-12RB Data Sheet Performance Curves Rated Surge On-State Current Maximum On-State Characteristics 40 Tj = 150°C 100 Tj = 25°C 10 -1 0 1 2 3 20 10 101 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 101 VGM = 6V PGM = 3W VGT IGM = 0.5A PG(AV) = 0.3W 100 IRGTI 10-1 IFGT I, IRGT III 100 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 30 0 100 4 101 VGD = 0.1V 102 103 103 Typical Example IRGT III 102 IRGT I, IFGT I 101 - 40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 - 40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) Surge On-State Current (A) 101 0 40 80 120 Junction Temperature (°C) R07DS0962EJ0201 Rev.2.01 Feb. 19, 2019 160 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) On-State Current (A) 102 103 Typical Example IRGT III IRGT I IFGT I 102 101 100 101 102 Gate Current Pulse Width (ms) Page 3 of 8 BCR3FM-12RB Data Sheet 102 6 103 104 5 4 3 2 1 #BG0,#FG0,#FA0 #BB0 0 -1 10 100 101 102 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to case) 102 101 100 - 10 1 101 102 103 104 105 Conduction Time (Cycles at 60Hz) Maximum On-State Power Dissipation Allowable Case Temperature vs. RMS On-State Current 160 Case Temperature (°C) 4 360° Conduction Resistive, 3 inductive loads 2 1 0 0 1 2 3 4 #BB0 #BG0,#FG0,#FA0 120 100 Curves apply regardless of conduction angle 80 60 40 360° Conduction 20 Resistive inductive loads 0 0 1 2 3 4 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 160 #BB0 #BG0,#FG0,#FA0 140 120 100 140 RMS On-State Current (A) Ambient Temperature (°C) On-State Power Dissipation (W) No Fins Conduction Time (Cycles at 60Hz) 5 Ambient Temperature (°C) 103 100 100 t2.3 60 60 t2.3 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 1 2 3 RMS On-State Current (A) R07DS0962EJ0201 Rev.2.01 Feb. 19, 2019 4 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) Page 4 of 8 BCR3FM-12RB Data Sheet Holding Current vs. Junction Temperature Latching Current vs. Junction Temperature 103 Distribution Distribution Typical Example 101 Latching Current (mA) Holding Current (mA) 102 40 80 120 80 120 160 Repetitive Peak Off-State Current vs. Junction Temperature Typical Example 100 80 60 40 20 0 40 80 120 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example 140 Tj = 125°C 120 III Quadrant 100 80 60 I Quadrant 20 102 103 104 Rate of Rise of Off-State Voltage (V/ms) R07DS0962EJ0201 Rev.2.01 Feb. 19, 2019 Repetitive Peak Off-State Current (Tj = t°C) ×100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Breakover Voltage vs. Junction Temperature Junction Temperature (°C) Breakover Voltage (dv/dt = xV/ms) × 100 (%) Breakover Voltage (dv/dt = 1V/ms) 40 Junction Temperature (°C) 120 0 1 10 0 Junction Temperature (°C) 140 40 100 - 40 160 Breakover Voltage (dv/dt = xV/ms) × 100 (%) Breakover Voltage (dv/dt = 1V/ms) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 0 160 0 - 40 101 T2+, G+ Typical Example T2- , G- VD=12V 100 - 40 102 T2+, GTypical Example 106 Typical Example 105 104 103 102 - 40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example 140 Tj = 150°C 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/ms) Page 5 of 8 BCR3FM-12RB Data Sheet Gate Trigger Characteristics Test Circuits 6 6 Recommended peripheral components for Triac Load C1 A 6V 330 V Test Procedure I A 6V V Test Procedure II 330 R1 C0 R0 C1 = 0.1 to 0.47 mF C0 = 0.1 mF R1 = 47 to 100 R0 = 100  6 A 6V V 330 Test Procedure III R07DS0962EJ0201 Rev.2.01 Feb. 19, 2019 Page 6 of 8 BCR3FM-12RB Data Sheet Package Dimensions Ordering code: #BG0, #FG0 JEITA Package Code - RENESAS Code Previous Code MASS (Typ) [g] PRSS0003AP-A TO-220FPA 1.65 Unit: mm 2.7±0.2 f 3.2±0.2 1.95±0.3 15.0±0.3 6.9±0.3 10.0±0.3 0.745±0.2 13.0±0.5 0.395±0.2 1.14±0.2 0.69±0.15 0.60 +0.19 - 0.11 2.54±0.25 3.2±0.2 4.5±0.2 2.54±0.25 R07DS0962EJ0201 Rev.2.01 Feb. 19, 2019 Page 7 of 8 BCR3FM-12RB Data Sheet Package Dimensions Ordering code: #BB0, #FA0 Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A MASS[Typ.] 1.9g Previous Code 10.16±0.20 2.54±0.20 6.68 ±0.20 3.3±0.2 1.28 ±0.30 3.18 ±0.20 15.87±0.20 f 3.18±0.10 12.98 ±0.30 Unit: mm Max 1.47 2.76 ±0.20 0.80±0.20 0.50 4.7±0.2 5.08 ±0.20 Ordering Information Orderable Part Number BCR3FM-12RB#BG0 Package TO-220FPA Quantity Note7 Remark 50 pcs./ tube Straight type Quality Grade Note9 General Industrial & BCR3FM-12RB-1#BG0 BCR3FM-12RB-#BG0 TO-220FPA TO-220FPA 50 pcs./ tube 50 pcs./ tube Straight type, IGT item:1 :Lead form type General Consumer Use BCR3FM-12RB1#BG0 BCR3FM-12RB#BB0 TO-220FPA TO-220FP 50 pcs./ tube 50 pcs./ tube :Lead form type, IGT item:1 Straight type EOL announced BCR3FM-12RB#FG0 BCR3FM-12RB-#FG0 TO-220FPA TO-220FPA 50 pcs./ tube 50 pcs./ tube Straight type :Lead form type Special Consumer Use Note8 BCR3FM-12RB#FA0 TO-220FP 50 pcs./ tube Straight type EOL announced Notes: 7. Please confirm the specification about the shipping in detail. 8. “Special Consumer Use” grade product is not tested for the “Temperature Humidity Bias” reliability in the condition of rated VDRM. Please be sure to implement qualification tests and judge whether the product meets your criteria. If necessary, please apply moisture-proof measures according to user’s conditions. 9. For further details about the classification in the Standard quality grade, please refer to the application note. R07DS0962EJ0201 Rev.2.01 Feb. 19, 2019 Page 8 of 8 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights, or other intellectual property rights of third parties, by or arising from the use of Renesas Electronics products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples. 3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any and all liability for any losses or damages incurred by 5. 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"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; industrial robots; etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale communication equipment; key financial terminal systems; safety control equipment; etc. Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not intended or authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). 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Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific characteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Unless designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics products, such as safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and impractical, you are responsible for evaluating the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. You are responsible for carefully and sufficiently investigating applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in compliance with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicable export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells or transfers the product to a third party, to notify such third party in advance of the contents and conditions set forth in this document. 11. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. 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BCR3FM-12RB#GA1 价格&库存

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