BCR3FM-14LB#BH0

Data Sheet BCR3FM-14LB 700V - 3A - Triac R07DS0963EJ0101 Rev.1.01 Feb. 19, 2019 Medium Power Use Features • • • • • Insulated Type • Planar Passivation Type • Viso: 2000 V IT (RMS) : 3 A VDRM : 800 V (Tj = 125°C) Tj: 150°C IFGTI, IRGTI, IRGT III: 30 mA Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) Ordering code #BB0 Ordering code #BG0 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 1 2 3 2 3 Application Power supply, motor control, heater control, solenoid control, and other general purpose AC control applications. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol Voltage class Unit VDRM 14 800 V Tj = 125C V V Tj = 150C VDSM 700 840 Parameter RMS on-state current Symbol IT (RMS) Ratings 3 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG (AV) 5 0.5 W W Peak gate voltage Peak gate current VGM IGM 10 2 V A Junction Temperature Storage temperature Tj Tstg –40 to +150 –40 to +150 C C Isolation voltage Note6 Viso 2000 V I2t for fusion Peak gate power dissipation Average gate power dissipation Conditions Conditions Commercial frequency, sine full wave 360conduction, Tc = 130C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Ta=25C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. R07DS0963EJ0101 Rev.1.01 Feb. 19, 2019 Page 1 of 8 BCR3FM-14LB Data Sheet Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger curentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutation voltageNote4 Notes: 2. 3. 4. 5. Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.6 Unit mA V Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 4.5 A, instantaneous measurement   VFGT VRGT — — — — 1.5 1.5 V V  VRGT — — 1.5 V  IFGT — — 30 mA   IRGT IRGT — — — — 30 30 mA mA VGD 0.2 0.1 — — — — V V Rth (j-c) (dv/dt)c — 5 — — 5.2 — C/W V/s Junction to caseNote3 Tj = 125C 1 — — V/s Tj = 150C Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125°C/150°C Commutating voltage and current waveforms (inductive load) Supply Voltage Time 2. Rate of decay of on-state commutating current (di/dt)c = –1.5 A/ms Main Current (di/dt)c Time 3. Peak off-state voltage VD = 400 V Main Voltage (dv/dt)c R07DS0963EJ0101 Rev.1.01 Feb. 19, 2019 Time VD Page 2 of 8 BCR3FM-14LB Data Sheet Performance Curves Rated Surge On-State Current Maximum On-State Characteristics 40 Tj = 150°C 100 Tj = 25°C 10-1 1 2 3 30 20 10 0 100 4 101 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PG(AV) = 0.5W PGM = 5W 101 IGM = 2A VGT = 1.5V 100 IFGT I IRGT I, IRGT III 10 -1 VGD = 0.1V 101 102 103 104 103 Typical Example IRGT III 102 IRGT I, IFGT I 101 - 40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 - 40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 0 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Surge On-State Current (A) 101 0 40 80 120 Junction Temperature (°C) R07DS0963EJ0101 Rev.1.01 Feb. 19, 2019 160 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) On-State Current (A) 102 103 Typical Example IRGT III IRGT I IFGT I 102 101 100 101 102 Gate Current Pulse Width (s) Page 3 of 8 BCR3FM-14LB Data Sheet 102 6 103 104 5 4 3 2 1 0 -1 10 100 101 102 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to case) 102 101 100 10-1 101 102 103 104 105 Conduction Time (Cycles at 60Hz) Maximum On-State Power Dissipation Allowable Case Temperature vs. RMS On-State Current 160 Case Temperature (°C) 4 360° Conduction Resistive, 3 inductive loads 2 1 0 0 1 2 3 4 140 120 100 60 40 360° Conduction 20 Resistive inductive loads 0 0 1 2 3 4 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 160 140 140 120 100 Curves apply regardless of conduction angle 80 RMS On-State Current (A) Ambient Temperature (°C) On-State Power Dissipation (W) No Fins Conduction Time (Cycles at 60Hz) 5 Ambient Temperature (°C) 103 100 100 t2.3 60 60 t2.3 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 1 2 3 RMS On-State Current (A) R07DS0963EJ0101 Rev.1.01 Feb. 19, 2019 4 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) Page 4 of 8 BCR3FM-14LB Data Sheet Latching Current vs. Junction Temperature Holding Current vs. Junction Temperature 102 103 101 Breakover Voltage (dv/dt = xV/s) × 100 (%) Breakover Voltage (dv/dt = 1V/s) 40 80 120 Typical Distribution T2+,G Typical Example 102 101 T2+,G+ T2- ,GTypical Example 100 - 40 160 0 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) Repetitive Peak Off-State Current vs. Junction Temperature Breakover Voltage vs. Junction Temperature 106 Typical Example 105 104 103 102 - 40 0 40 80 120 160 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Repetitive Peak Off-State Current (Tj = t°C) ×100 (%) Repetitive Peak Off-State Current (Tj = 25°C) VD=12V 100 - 40 0 Latching Current (mA) Typical Example 160 Typical Example 140 120 100 80 60 40 20 0 - 40 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example 140 Tj = 125°C 120 100 III Quadrant 80 60 I Quadrant 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/s) R07DS0963EJ0101 Rev.1.01 Feb. 19, 2019 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage (dv/dt = xV/s) × 100 (%) Breakover Voltage (dv/dt = 1V/s) Holding Current (mA) Distribution Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example 140 Tj = 150°C 120 100 III Quadrant 80 60 40 I Quadrant 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/s) Page 5 of 8 Data Sheet Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 102 102 Main Voltage (dv/dt)c Main Current Time VD (di/dt)c IT t Time Typical Example Tj = 125°C IT = 4 A t = 500 s VD = 200 V f = 3 Hz 101 Critical Rate of Rise of Off-State Commutating Voltage (V/s) Critical Rate of Rise of Off-State Commutating Voltage (V/s) BCR3FM-14LB I Quadrant Minimum Value III Quadrant 100 100 101 102 Main Current IT Time VD (di/dt)c t Time 101 Typical Example Tj = 150°C IT = 4 A t = 500 s VD = 200 V f = 3 Hz III Quadrant I Quadrant 100 Minimum Value 100 Rate of Decay of On-State Commutating Current (A/ms) 101 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 6 Main Voltage (dv/dt)c 6 Recommended peripheral components for Triac Load C1 A 6V 330 V Test Procedure I A 6V V 330 Test Procedure II R1 C0 R0 C1 = 0.1 to 0.47 F C0 = 0.1 F R1 = 47 to 100 R0 = 100  6 A 6V V 330 Test Procedure III R07DS0963EJ0101 Rev.1.01 Feb. 19, 2019 Page 6 of 8 BCR3FM-14LB Data Sheet Package Dimensions Ordering code: #BG0 JEITA Package Code - RENESAS Code Previous Code MASS (Typ) [g] PRSS0003AP-A TO-220FPA 1.65 Unit: mm 2.7±0.2 f 3.2±0.2 1.95±0.3 15.0±0.3 6.9±0.3 10.0±0.3 0.745±0.2 13.0±0.5 0.395±0.2 1.14±0.2 0.69±0.15 0.60 +0.19 - 0.11 2.54±0.25 3.2±0.2 4.5±0.2 2.54±0.25 R07DS0963EJ0101 Rev.1.01 Feb. 19, 2019 Page 7 of 8 BCR3FM-14LB Data Sheet Package Dimensions Ordering code: #BB0 Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A MASS[Typ.] 1.9g Previous Code 10.16±0.20 2.54±0.20 6.68 ±0.20 3.3±0.2 1.28 ±0.30 3.18 ±0.20 15.87±0.20 f 3.18±0.10 12.98 ±0.30 Unit: mm Max 1.47 2.76 ±0.20 0.80±0.20 0.50 4.7±0.2 5.08 ±0.20 Ordering Information Orderable Part Number BCR3FM-14LB#BG0 Package TO-220FPA Quantity Note6 Remark 50 pcs./ tube Straight type Status Mass Production BCR3FM-14LB-#BG0 BCR3FM-14LB#BB0 TO-220FPA TO-220FP 50 pcs./ tube 50 pcs./ tube EOL announced :Lead form type Straight type Notes: 6. 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