BCR3KM-12

BCR3KM-12 Triac Low Power Use REJ03G0312-0200 Rev.2.00 Nov.09.2004 Features • IT(RMS) : 3 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note3 • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Electric rice cooker, electric pot, and controller for other heater Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Rev.2.00, Nov.09.2004, page 1 of 6 BCR3KM-12 Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT(RMS) ITSM I2 t PGM PG(AV) VGM IGM Tj Tstg — Viso Ratings 3.0 30 3.7 3 0.3 6 0.5 – 40 to +125 – 40 to +125 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 111°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 I II III I II III Symbol IDRM VTM VFGT I VRGT I VRGT III IFGT I IRGT I IRGT III VGD Rth(j-c) Rth(j-a) Min. — — — — — — — — 0.2 — — Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 15Note3 15Note3 15Note3 — 4.0 50 Unit mA V V V V mA mA mA V °C/W °C/W Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 4.5 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2VDRM Junction to caseNote4 Junction to ambient Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Thermal resistance Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1) 4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. Rev.2.00, Nov.09.2004, page 2 of 6 BCR3KM-12 Performance Curves Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 40 Rated Surge On-State Current Tj = 25°C Surge On-State Current (A) 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) On-State Voltage (V) Conduction Time (Cycles at 60Hz) 102 7 5 3 2 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 Typical Example Gate Voltage (V) 101 7 5 3 2 PGM = 3W PG(AV) = 0.3W IGM = 0.5A IRGT III VGT IFGT I, IRGT I 100 7 5 3 2 IRGT I IFGT I, IRGT III VGD = 0.2V 10–1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example 0 20 40 60 80 100 120 140 Junction Temperature (°C) Conduction Time (Cycles at 60Hz) Rev.2.00, Nov.09.2004, page 3 of 6 BCR3KM-12 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Maximum On-State Power Dissipation 5.0 Transient Thermal Impedance (°C/W) 102 7 5 4 3 2 On-State Power Dissipation (W) 4.5 4.0 360° Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 160 Allowable Ambient Temperature vs. RMS On-State Current 120 100 Curves apply regardless of conduction angle 80 60 40 Ambient Temperature (°C) 140 140 120 100 Case Temperature (°C) 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 80 All fins are black painted aluminum and greased 60 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 360° Conduction 20 Resistive, inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Repetitive Peak Off-State Current vs. Junction Temperature 105 7 5 3 2 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 RMS On-State Current (A) Junction Temperature (°C) Rev.2.00, Nov.09.2004, page 4 of 6 BCR3KM-12 Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 4 3 2 Latching Current vs. Junction Temperature 103 7 5 3 2 Typical Example Latching Current (mA) Distribution T2+, G– Typical Example 102 7 5 3 2 102 7 5 4 3 2 101 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 100 T2+, G+ Typical Example T2–, G– 0 20 40 60 80 100 120 140 –60 –40 –20 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 Typical Example Tj = 125°C III Quadrant I Quadrant 0 20 40 60 80 100120 140 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 4 3 2 Gate Trigger Characteristics Test Circuits 6Ω 6Ω IRGT III IRGT I IFGT I Typical Example 6V V A 330Ω 6V V A 330Ω 102 7 5 4 3 2 Test Procedure I 6Ω Test Procedure II 101 0 10 6V 2 3 4 5 7 101 2 3 4 5 7 102 A V 330Ω Gate Current Pulse Width (µs) Test Procedure III Rev.2.00, Nov.09.2004, page 5 of 6 BCR3KM-12 Package Dimensions TO-220FN EIAJ Package Code  JEDEC Code  Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR3KM-12RA BCR3KM-12RA-A8 Straight type Plastic Magazine (Tube) 50 Type name +RA Lead form Plastic Magazine (Tube) 50 Type name +RA – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00, Nov.09.2004, page 6 of 6 2.6 ± 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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