BCR3LM-12LB-A8

Preliminary Datasheet BCR3LM-12LB Triac Medium Power Use Features     IT (RMS) : 3 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 20 mA Viso : 1800 V  The Product guaranteed maximum junction temperature 150C  Insulated Type  Planar Type  UL Recognized : File No. E223904 R07DS0063EJ0100 Rev.1.00 Jul 27, 2010 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications AC no junction Switching, light dimmer, electronic blanket, Control of household electrical appliance such as electric fans, solenoid driver, small motor control, and other general purpose control applications Parameter Repetitive peak off-state voltageNote1 Note1 Non-repetitive peak off-state voltage Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Parameter RMS on-state current Surge on-state current I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 3.0 30 3.7 5 0.5 10 2 –40 to +150 –40 to +150 1.5 1800 Unit A A A2s W W V A C C g V Conditions Commercial frequency, sine full wave 360°conduction, Tc = 130C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1  T2  G terminal to case R07DS0063EJ0100 Rev.1.00 Jul 27, 2010 Page 1 of 7 BCR3LM-12LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2       Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2/0.1 — 5/1 Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 20 20 20 — 5.2 — Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 4.5 A, instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C/150C Gate trigger curentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = –1.5 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Main Current Main Voltage (dv/dt)c R07DS0063EJ0100 Rev.1.00 Jul 27, 2010 Page 2 of 7 BCR3LM-12LB Preliminary Performance Curves Maximum On-State Characteristics 10 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10 –1 2 Rated Surge On-State Current 40 Surge On-State Current (A) 35 30 25 20 15 10 5 00 10 23 5 7 10 1 On-State Current (A) Tj = 150°C Tj = 25°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 23 5 7 10 2 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 102 PG(AV) = 0.5W VGM = 10V PGM = 5W Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 IRGT III Typical Example Gate Voltage (V) 101 VGT 100 IRGT I VGD = 0.1V IGM = 2A IFGT I, IRGT III IFGT I, IRGT I 10–1 10–2 100 101 102 103 104 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 Typical Example Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 103 104 100 101 102 Junction Temperature (°C) Conduction Time (Cycles at 60Hz) R07DS0063EJ0100 Rev.1.00 Jul 27, 2010 Page 3 of 7 BCR3LM-12LB Preliminary Allowable Case Temperature vs. RMS On-State Current 160 Maximum On-State Power Dissipation On-State Power Dissipation (W) 5.0 4.5 4.0 Case Temperature (°C) 140 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Curves apply regardless of conduction angle 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 0.5 0 0 360° Conduction 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current 160 Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads Ambient Temperature (°C) Ambient Temperature (°C) 140 120 100 100 t2.3 120 120 t2.3 140 120 100 80 60 40 20 0 0 0.5 1.0 100 80 60 60 t2.3 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Repetitive Peak Off-State Current vs. Junction Temperature 10 7 5 3 2 5 10 7 5 3 2 4 10 7 5 3 2 3 10 7 5 3 2 2 10 Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 10 7 5 3 2 102 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 3 6 Typical Example Typical Example –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) R07DS0063EJ0100 Rev.1.00 Jul 27, 2010 Page 4 of 7 BCR3LM-12LB Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 Preliminary Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 160 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Typical Example Distribution T2+, G– Typical Example Latching Current (mA) 101 7 5 3 T +, G+ 2 2– – Typical Example T2 , G 100 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) 160 140 120 100 80 60 I Quadrant Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Typical Example Tj = 125°C Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 140 120 100 80 60 40 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant III Quadrant Typical Example Tj = 150°C III Quadrant 40 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Rate of Rise of Off-State Voltage (V/μs) Rate of Rise of Off-State Voltage (V/μs) Commutation Characteristics (Tj=125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 7 5 3 2 10 7 5 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Commutation Characteristics (Tj=150°C) 7 5 3 2 10 7 5 3 2 10 70 10 0 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz III Quadrant 3 Minimum Characteristics 2 Value 10 70 10 0 III Quadrant I Quadrant Minimum Characteristics Value I Quadrant 23 5 7 101 23 5 7 102 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Rate of Decay of On-State Commutating Current (A/ms) R07DS0063EJ0100 Rev.1.00 Jul 27, 2010 Page 5 of 7 BCR3LM-12LB Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 10 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 10 1 3 Preliminary Typical Example IRGT III IRGT I IFGT I 23 5 7 10 2 Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 6V V A 330Ω 6V V A 330Ω R1 C0 R0 Test Procedure I 6Ω Test Procedure II C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6V V A 330Ω Test Procedure III R07DS0063EJ0100 Rev.1.00 Jul 27, 2010 Page 6 of 7 BCR3LM-12LB Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 3.0 ± 0.3 15.0 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 6.5 ± 0.3 2.6 ± 0.2 4.5 ± 0.2 Order Code Lead form Straight type Lead form Note: Standard packing Plastic Magazine (Tube) Plastic Magazine (Tube) Quantity 50 50 Standard order code Type name Type name – Lead forming code Standard order code example BCR3LM-12LB BCR3LM-12LB-A8 Please confirm the specification about the shipping in detail. 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