Data Sheet
BCR5AS-12B
R07DS1442EJ0500
(Previous: REJ03G0451-0400)
Rev.5.00
May. 10, 2019
600V - 5A - Triac
Medium Power Use
Features
• IT (RMS) : 5 A
• VDRM : 600 V
• IFGTI, IRGTI, IRGT III: 30 mA
• Tj: 150 °C
• Planar Passivation Type
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
2, 4
4
12
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
1
3
Application
Small motor control, heater control, and other general purpose AC control applications.
Maximum Ratings
Parameter
Symbol
Voltage class
Unit
VDRM
12
600
V
VDSM
720
V
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state
voltageNote1
Notes: 1. Gate open.
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
5
Unit
A
Surge on-state current
ITSM
50
A
I2 t
10.4
A2s
PGM
PG (AV)
3
0.3
W
W
Peak gate voltage
Peak gate current
VGM
IGM
10
2
V
A
Junction Temperature
Storage temperature
Tj
Tstg
–40 to +150
–40 to +150
C
C
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
R07DS1442EJ0500 Rev.5.00
May. 10, 2019
Conditions
Commercial frequency, sine full wave
360conduction, Tc = 128CNote3
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave
60 Hz, surge on-state current
Page 1 of 7
BCR5AS-12B
Data Sheet
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote4
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
VFGT
VRGT
—
—
—
—
1.5
1.5
V
V
VRGT
—
—
1.5
V
IFGT
—
—
30
mA
IRGT
IRGT
—
—
—
—
30
30
mA
mA
VGD
0.2
0.1
—
—
—
—
V
Rth (j-c)
(dv/dt)c
—
5
—
—
3.0
—
C/W
V/s
1
—
—
Test conditions
Tj = 150C, VDRM applied
Tc = 25C, ITM = 7 A,
instantaneous measurement
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
Tj = 150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
Main Current
(di/dt)c
Time
3. Peak off-state voltage
VD = 400 V
Main Voltage
(dv/dt)c
R07DS1442EJ0500 Rev.5.00
May. 10, 2019
Time
VD
Page 2 of 7
BCR5AS-12B
Data Sheet
Performance Curves
Rated Surge On-State Current
Maximum On-State Characteristics
100
Tj = 150°C
100
Tj = 25°C
10 -1
0
1
2
40
20
101
102
Conduction Time (Cycles at 60Hz)
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
101
PG(AV) = 0.3W
PGM = 3W
IGM = 2A
VGT = 1.5V
100
IFGT I
IRGT I, IRGT III
10
60
0
100
4
-1
VGD = 0.1V
101
102
103
104
103
Typical Example
IRGT III
102
IFGT I
IRGT I
101
- 40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
102
101
- 40
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
3
80
On-State Voltage (V)
VGM = 10V
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
Surge On-State Current (A)
101
0
40
80
120
Junction Temperature (°C)
R07DS1442EJ0500 Rev.5.00
May. 10, 2019
160
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
On-State Current (A)
102
103
Typical Example
IRGT III
IRGT I
IFGT I
102
101
100
101
102
Gate Current Pulse Width (s)
Page 3 of 7
Data Sheet
Maximum On-State Power Dissipation
4
8
On-State Power Dissipation (W)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
3
2
1
0 -1
10
100
5
4
3
2
360° Conduction
Resistive,
inductive loads
1
0
0
1
2
3
4
5
6
7
8
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
140
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
1
2
3
4
160
6
RMS On-State Current (A)
Ambient Temperature (°C)
Case Temperature (°C)
102
7
Conduction Time (Cycles at 60Hz)
160
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
101
5
6
7
120
100
80
60
40
20
0
0.5
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Breakover Voltage vs.
Junction Temperature
Repetitive Peak Off-State Current vs.
Junction Temperature
Typical Example
140
120
100
80
60
40
20
0
- 40
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
0
8
0
40
80
120
Junction Temperature (°C)
R07DS1442EJ0500 Rev.5.00
May. 10, 2019
160
Repetitive Peak Off-State Current (Tj = t°C)
×100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Transient Thermal Impedance (°C/W)
BCR5AS-12B
106
Typical Example
105
104
103
102
- 40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 7
BCR5AS-12B
Data Sheet
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
102
102
Typical Example
Typical Example
Latching Current (mA)
Holding Current (mA)
Distribution
101
- 40
101
T2+, G T2- , GT2+, G+
VD=12V
100
Distribution
0
40
80
120
100
160
- 40
160
Typical Example
140 Tj = 125°C
120
III Quadrant
80
60
40
I Quadrant
20
0 1
10
102
103
104
Breakover Voltage (dv/dt = xV/s)
× 100 (%)
Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
100
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
140 Tj = 150°C
120
100
80
III Quadrant
60
40
I Quadrant
20
0 1
10
102
103
104
Rate of Rise of Off-State Voltage (V/s)
Rate of Rise of Off-State Voltage (V/s)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
102
Typical Example
Tj = 125°C
IT = 4 A
t = 500 s
VD = 200 V
f = 3 Hz
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
t
Time
I Quadrant
101
III Quadrant
Minimum
Value
100
100
101
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1442EJ0500 Rev.5.00
May. 10, 2019
102
Critical Rate of Rise of Off-State
Commutating Voltage (V/s)
Critical Rate of Rise of Off-State
Commutating Voltage (V/s)
Breakover Voltage (dv/dt = xV/s)
× 100 (%)
Breakover Voltage (dv/dt = 1V/s)
Junction Temperature (°C)
0
Typical Example
Tj = 150°C
IT = 4 A
t = 500 s
VD = 200 V
f = 3 Hz
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
t
Time
101
III Quadrant
I Quadrant
100
100
Minimum
Value
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR5AS-12B
Data Sheet
Gate Trigger Characteristics Test Circuits
6
6
Recommended peripheral components for Triac
Load
C1
A
6V
330
V
Test Procedure I
A
6V
V
Test Procedure II
330
R1
C0
R0
C1 = 0.1 to 0.47 F C0 = 0.1 F
R1 = 47 to 100
R0 = 100
6
A
6V
V
330
Test Procedure III
R07DS1442EJ0500 Rev.5.00
May. 10, 2019
Page 6 of 7
BCR5AS-12B
Data Sheet
Package Dimensions
Package Name: MP-3A
RENESAS Code
PRSS0004ZG-A
6.1±0.2
Unit: mm
2.3
0.5±0.2
2.5Min
1Max
0.76±0.2
MASS[Typ.]
0.32 g
0.1±0.1
1.4±0.2
6.6
5.3±0.2
Previous Code
TMP3
10.4Max
JEITA Package Code
SC-63
1±0.2
Package Name
MP-3A
0.76
0.5±0.2
1
2.3
2.3±0.2
Ordering Information
Orderable Part Number
BCR5AS-12B-T13#B01
BCR5AS-12B#B01
Note:
Package
Packing Note5
MP-3A
MP-3A
Embossed tape
Tube
Quantity
Remark
3000 pcs.
75 pcs. Tube packing is to be abolished.
5. Please confirm the specification about the shipping in detail.
R07DS1442EJ0500 Rev.5.00
May. 10, 2019
Page 7 of 7
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