BCR5FM-12LB#BH0

Data Sheet BCR5FM-12LB 600V - 5A - Triac R07DS0960EJ0101 Rev.1.01 Feb. 19, 2019 Medium Power Use Features • • • • • Insulated Type • Planar Passivation Type • Viso: 2000 V IT (RMS) : 5 A VDRM : 600 V Tj: 150°C IFGTI, IRGTI, IRGT III: 20 mA (10 mA) Note5 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) Ordering code #BB0 Ordering code #BG0 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 1 2 3 2 3 Application Power supply, motor control, heater control, solenoid control, and other general purpose AC control applications. Maximum Ratings Parameter Symbol Voltage class Unit Repetitive peak off-state voltageNote1 VDRM 12 600 V Non-repetitive peak off-state voltageNote1 VDSM 720 V Symbol Ratings Unit Conditions RMS on-state current Parameter IT (RMS) 5 A Surge on-state current ITSM 50 A I2 t 10.4 A2s Commercial frequency, sine full wave 360conduction, Tc = 113C 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current PGM 5 W PG (AV) VGM 0.5 10 W V Peak gate current Junction Temperature IGM Tj 2 –40 to +150 A C Storage temperature Isolation voltage Note6 Tstg Viso –40 to +150 2000 C V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Ta=25C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. R07DS0960EJ0101 Rev.1.01 Feb. 19, 2019 Page 1 of 8 BCR5FM-12LB Data Sheet Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Gate trigger curentNote2 Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.8 Unit mA V   VFGT VRGT — — — — 1.5 1.5 V V  VRGT — — 1.5 V  IFGT — — 20 Note5 mA   Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutation voltageNote4 Notes: 2. 3. 4. 5. 6. Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 7 A, instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  IRGT IRGT — — — — 20 Note5 20 Note5 mA mA VGD 0.2 0.1 — — — — V V Rth (j-c) (dv/dt)c — 5 — — 4.9 — C/W V/s Junction to caseNote3 Tj = 125C 1 — — V/s Tj = 150C Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. High sensitivity (IGT  10 mA) is also available. (IGT item:1) Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125°C/150°C Commutating voltage and current waveforms (inductive load) Supply Voltage Time 2. Rate of decay of on-state commutating current (di/dt)c = –2.5 A/ms Main Current (di/dt)c Time 3. Peak off-state voltage VD = 400 V Main Voltage (dv/dt)c R07DS0960EJ0101 Rev.1.01 Feb. 19, 2019 Time VD Page 2 of 8 BCR5FM-12LB Data Sheet Performance Curves Rated Surge On-State Current Maximum On-State Characteristics 100 Tj = 150°C 100 Tj = 25°C 10 -1 1 2 3 60 40 20 101 102 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature VGM = 10V PG(AV) = 0.5W PGM = 5W 101 IGM = 2A VGT = 1.5V 100 IFGT I IRGT I, IRGT III 10 80 0 100 4 -1 VGD = 0.1V 101 102 103 104 103 Typical Example IRGT III 102 IFGT I IRGT I 101 - 40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 - 40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 0 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Surge On-State Current (A) 101 0 40 80 120 Junction Temperature (°C) R07DS0960EJ0101 Rev.1.01 Feb. 19, 2019 160 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) On-State Current (A) 102 103 Typical Example IRGT III IRGT I IFGT I 102 101 100 101 102 Gate Current Pulse Width (s) Page 3 of 8 BCR5FM-12LB Data Sheet 103 104 5 4 3 2 1 0 -1 10 100 101 102 Transient Thermal Impedance (°C/W) 102 6 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) No Fins 102 101 100 10- 1 101 102 103 104 105 Conduction Time (Cycles at 60Hz) Maximum On-State Power Dissipation Allowable Case Temperature vs. RMS On-State Current 8 160 7 140 6 5 4 3 2 360° Conduction Resistive, inductive loads 1 0 0 1 2 3 4 5 6 7 8 120 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 2 3 4 5 6 7 8 RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 120 Ambient Temperature (°C) 120 ×120 ×t2.3 140 100 ×100 ×t2.3 100 60 ×60 ×t2.3 80 60 40 Curves apply regardless All fins are black painted aluminum and greased of conduction angle Resistive, inductive loads Natural convection 20 0 Curves apply regardless of conduction angle RMS On-State Current (A) 160 Ambient Temperature (°C) 103 Conduction Time (Cycles at 60Hz) Case Temperature (°C) On-State Power Dissipation (W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to case) 0 1 2 3 4 5 6 7 RMS On-State Current (A) R07DS0960EJ0101 Rev.1.01 Feb. 19, 2019 8 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) Page 4 of 8 Data Sheet Repetitive Peak Off-State Current vs. Junction Temperature 106 Typical Example 105 104 103 102 - 40 0 40 80 120 160 Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Repetitive Peak Off-State Current (Tj = t°C) ×100 (%) Repetitive Peak Off-State Current (Tj = 25°C) BCR5FM-12LB Typical Example 140 120 100 80 60 40 20 0 - 40 Latching Current (mA) 101 VD=12V 160 0 40 80 120 T2+, GTypical Example 101 Distribution T2+, G+ T2- , G- Typical Example 100 - 40 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 I Quadrant 40 20 102 103 104 Rate of Rise of Off-State Voltage (V/s) R07DS0960EJ0101 Rev.1.01 Feb. 19, 2019 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage (dv/dt = xV/s) × 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (dv/dt = xV/s) × 100 (%) Breakover Voltage (dv/dt = 1V/s) 120 Latching Current vs. Junction Temperature 102 100 - 40 80 Holding Current vs. Junction Temperature Typical Example 0 1 10 40 Junction Temperature (°C) Distribution 60 0 Junction Temperature (°C) 102 Holding Current (mA) 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 150°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/s) Page 5 of 8 BCR5FM-12LB Data Sheet Commutation Characteristics (Tj=125°C) Main Voltage (dv/dt)c Main Current Time VD (di/dt)c IT t Time 102 Typical Example Tj = 125°C IT = 4 A t = 500 s VD = 200 V f = 3 Hz Critical Rate of Rise of Off-State Commutating Voltage (V/s) Critical Rate of Rise of Off-State Commutating Voltage (V/s) 102 Commutation Characteristics (Tj=150°C) 101 I Quadrant Minimum Value III Quadrant 100 100 101 102 Main Current IT 101 Time VD (di/dt)c t Time Typical Example Tj = 150°C IT = 4 A t = 500 s VD = 200 V f = 3 Hz III Quadrant I Quadrant Minimum Value 100 100 101 102 Rate of Decay of On-State Commutating Current (A/ms) Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 6 Main Voltage (dv/dt)c 6 Recommended peripheral components for Triac Load C1 A 6V 330 V Test Procedure I A 6V V 330 Test Procedure II R1 C0 R0 C1 = 0.1 to 0.47 F C0 = 0.1 F R1 = 47 to 100 R0 = 100  6 A 6V V 330 Test Procedure III R07DS0960EJ0101 Rev.1.01 Feb. 19, 2019 Page 6 of 8 BCR5FM-12LB Data Sheet Package Dimensions Ordering code: #BG0 JEITA Package Code - RENESAS Code Previous Code MASS (Typ) [g] PRSS0003AP-A TO-220FPA 1.65 Unit: mm 2.7±0.2 f 3.2±0.2 1.95±0.3 15.0±0.3 6.9±0.3 10.0±0.3 0.745±0.2 13.0±0.5 0.395±0.2 1.14±0.2 0.69±0.15 0.60 +0.19 - 0.11 2.54±0.25 3.2±0.2 4.5±0.2 2.54±0.25 R07DS0960EJ0101 Rev.1.01 Feb. 19, 2019 Page 7 of 8 BCR5FM-12LB Data Sheet Package Dimensions Ordering code: #BB0 Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A MASS[Typ.] 1.9g Previous Code 10.16±0.20 2.54±0.20 6.68 ±0.20 3.3±0.2 1.28 ±0.30 3.18 ±0.20 15.87±0.20 f 3.18±0.10 12.98 ±0.30 Unit: mm Max 1.47 2.76 ±0.20 0.80±0.20 0.50 4.7±0.2 5.08 ±0.20 Ordering Information Orderable Part Number BCR5FM-12LB#BG0 Package TO-220FPA Quantity Note7 Remark 50 pcs./ tube Straight type BCR5FM-12LB-1#BG0 BCR5FM-12LB-#BG0 TO-220FPA TO-220FPA 50 pcs./ tube 50 pcs./ tube Straight type, IGT item:1 :Lead form type BCR5FM-12LB1#BG0 BCR5FM-12LB#BB0 TO-220FPA TO-220FP 50 pcs./ tube 50 pcs./ tube :Lead form type, IGT item:1 Straight type EOL announced BCR5FM-12LB-#BB0 TO-220FP 50 pcs./ tube :Lead form type Status Mass Production Notes: 7. Please confirm the specification about the shipping in detail. R07DS0960EJ0101 Rev.1.01 Feb. 19, 2019 Page 8 of 8 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. Renesas Electronics disclaims any and all liability for any losses and damages incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics hereby expressly disclaims any warranties against and liability for infringement or any other claims involving patents, copyrights, or other intellectual property rights of third parties, by or arising from the use of Renesas Electronics products or technical information described in this document, including but not limited to, the product data, drawings, charts, programs, algorithms, and application examples. 3. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You shall not alter, modify, copy, or reverse engineer any Renesas Electronics product, whether in whole or in part. Renesas Electronics disclaims any and all liability for any losses or damages incurred by 5. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The intended applications for each Renesas Electronics product depends on the you or third parties arising from such alteration, modification, copying or reverse engineering. product’s quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; industrial robots; etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control (traffic lights); large-scale communication equipment; key financial terminal systems; safety control equipment; etc. Unless expressly designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not intended or authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems; surgical implantations; etc.), or may cause serious property damage (space system; undersea repeaters; nuclear power control systems; aircraft control systems; key plant systems; military equipment; etc.). Renesas Electronics disclaims any and all liability for any damages or losses incurred by you or any third parties arising from the use of any Renesas Electronics product that is inconsistent with any Renesas Electronics data sheet, user’s manual or other Renesas Electronics document. 6. When using Renesas Electronics products, refer to the latest product information (data sheets, user’s manuals, application notes, “General Notes for Handling and Using Semiconductor Devices” in the reliability handbook, etc.), and ensure that usage conditions are within the ranges specified by Renesas Electronics with respect to maximum ratings, operating power supply voltage range, heat dissipation characteristics, installation, etc. Renesas Electronics disclaims any and all liability for any malfunctions, failure or accident arising out of the use of Renesas Electronics products outside of such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of Renesas Electronics products, semiconductor products have specific characteristics, such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Unless designated as a high reliability product or a product for harsh environments in a Renesas Electronics data sheet or other Renesas Electronics document, Renesas Electronics products are not subject to radiation resistance design. You are responsible for implementing safety measures to guard against the possibility of bodily injury, injury or damage caused by fire, and/or danger to the public in the event of a failure or malfunction of Renesas Electronics products, such as safety design for hardware and software, including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult and impractical, you are responsible for evaluating the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. You are responsible for carefully and sufficiently investigating applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive, and using Renesas Electronics products in compliance with all these applicable laws and regulations. Renesas Electronics disclaims any and all liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technologies shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You shall comply with any applicable export control laws and regulations promulgated and administered by the governments of any countries asserting jurisdiction over the parties or transactions. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, or any other party who distributes, disposes of, or otherwise sells or transfers the product to a third party, to notify such third party in advance of the contents and conditions set forth in this document. 11. This document shall not be reprinted, reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its directly or indirectly controlled subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. (Rev.4.0-1 November 2017) http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics Corporation TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan Renesas Electronics America Inc. 1001 Murphy Ranch Road, Milpitas, CA 95035, U.S.A. Tel: +1-408-432-8888, Fax: +1-408-434-5351 Renesas Electronics Canada Limited 9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3 Tel: +1-905-237-2004 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-6503-0, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. Room 1709 Quantum Plaza, No.27 ZhichunLu, Haidian District, Beijing, 100191 P. R. China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, 200333 P. R. China Tel: +86-21-2226-0888, Fax: +86-21-2226-0999 Renesas Electronics Hong Kong Limited Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2265-6688, Fax: +852 2886-9022 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949 Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics India Pvt. Ltd. No.777C, 100 Feet Road, HAL 2nd Stage, Indiranagar, Bangalore 560 038, India Tel: +91-80-67208700, Fax: +91-80-67208777 Renesas Electronics Korea Co., Ltd. 17F, KAMCO Yangjae Tower, 262, Gangnam-daero, Gangnam-gu, Seoul, 06265 Korea Tel: +82-2-558-3737, Fax: +82-2-558-5338 © 2019 Renesas Electronics Corporation. All rights reserved. Colophon 7.2