BCR5KM-14LA

BCR5KM-14LA Triac Medium Power Use REJ03G0331-0100 Rev.1.00 Aug.20.2004 Features • • • • IT (RMS) : 5 A VDRM : 700 V IFGTI , IRGTI, IRGTⅢ : 30 mA Viso : 2000 V • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Switching mode power supply, washing machine, small motor control, heater control, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltage Non-repetitive peak off-state voltageNote1 Note1 Symbol VDRM VDSM Voltage class 14 700 840 Unit V V Rev.1.00, Aug.20.2004, page 1 of 7 BCR5KM-14LA Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 5 50 10.4 3 0.3 10 2 – 40 to +125 – 40 to +125 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 96°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2 — 5 Typ. — — — — — — — — — — — Max. 2.0 1.8 1.5 1.5 1.5 30 30 30 — 3.8 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 7 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate trigger currentNote2 Gate non-trigger voltage Tj = 125°C, VD = 1/2 VDRM Thermal resistance Junction to caseNote3 Critical-rate of rise of off-state Tj = 125°C commutating voltageNote4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125°C 2. Rate of decay of on-state commutating current (di/dt)c = – 2.5 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c Rev.1.00, Aug.20.2004, page 2 of 7 BCR5KM-14LA Performance Curves Maximum On-State Characteristics 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.5 1.0 1.5 100 Rated Surge On-State Current Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) Tj = 125°C Tj = 25°C 2.0 2.5 3.0 3.5 4.0 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 102 7 5 3 2 VGM = 10V 101 7 PG(AV) = 5 0.3W 3 VGT = 1.5V 2 100 7 5 3 2 Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Typical Example IRGT I, IRGT III Gate Voltage (V) PGM = 3W IGM = 2A IFGT I IFGT I IRGT I IRGT III VGD = 0.2V 10–1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 2 3 5 7103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –1 10 2 3 5 7100 2 3 5 7101 2 3 5 7102 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60Hz) Rev.1.00, Aug.20.2004, page 3 of 7 BCR5KM-14LA Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) 10 7 5 3 2 2 10 7 5 3 2 1 10 7 5 3 2 0 10 7 5 3 2 –1 10 1 3 Maximum On-State Power Dissipation 10 On-State Power Dissipation (W) No Fins 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 360° Conduction Resistive, inductive loads 6 7 8 9 10 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Curves apply regardless 140 of conduction angle 160 160 Allowable Ambient Temperature vs. RMS On-State Current All fins are black painted 140 aluminum and greased 120 100 80 60 Curves apply regardless of 40 conduction angle Resistive, 20 inductive loads Natural convection 0 0 1 3 2 4 Ambient Temperature (°C) Case Temperature (°C) 120 100 80 60 40 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 360° Conduction 20 Resistive, inductive loads 0 0 1 3 2 4 5 6 7 8 5 6 7 8 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Repetitive Peak Off-State Current vs. Junction Temperature 105 7 Typical Example 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0 0.5 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) Junction Temperature (°C) Rev.1.00, Aug.20.2004, page 4 of 7 BCR5KM-14LA Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 Typical Example Latching Current (mA) Distribution T2+, G– Typical Example T2–, G– Typical Example 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 T2+, G+ Typical Example Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 140 120 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 Typical Example Tj = 125°C III Quadrant 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 I Quadrant Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 102 7 5 3 2 101 7 5 3 2 100 100 Minimum Characteristics Value III Quadrant I Quadrant Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Gate Trigger Current vs. Gate Current Pulse Width 103 7 5 3 2 102 7 5 3 2 101 0 10 23 5 7 101 23 5 7 102 Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz IFGT I IRGT I Typical Example IRGT III 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Rev.1.00, Aug.20.2004, page 5 of 7 BCR5KM-14LA Gate Trigger Characteristics Test Circuits 6Ω 6Ω 6V V A 330Ω 6V V A 330Ω Test Procedure I 6Ω Test Procedure II 6V V A 330Ω Test Procedure III Rev.1.00, Aug.20.2004, page 6 of 7 BCR5KM-14LA Package Dimensions TO-220FN EIAJ Package Code  JEDEC Code  Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 ± 0.3 2.8 ± 0.2 15 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example BCR5KM-14LA BCR5KM-14LA-A8 Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 7 of 7 2.6 ± 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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