BCR5KM

To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5KM OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 ➀➁➂ 2.6 ± 0.2 ✽ Measurement point of case temperature q IT (RMS) .................................................................. 5A q VDRM ................................................................. 600V q IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) ✽3 q UL Recognized: Yellow Card No.E80276(N) File No. E80271 ➁ ➀ ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state Non-repetitive peak off-state voltage✽1 voltage✽1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc=103°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 5 50 10.4 3 0.3 10 2 –40 ~ +125 –40 ~ +125 Unit A A A 2s W W V A °C °C g V Mar. 2002 Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case 2.0 2000 ✽1. Gate open. MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) Rth (j-a) Gate trigger current ✽2 Gate non-trigger voltage Thermal resistance Thermal resistance Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125°C, VDRM applied Tc=25°C, ITM=7A, Instantaneous measurement Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Limits Min. — — — — — — — — 0.2 — — Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 15 ✽3 15 ✽3 15 ✽3 — 3.8 50 Unit mA V V V V mA mA mA V °C/ W °C/ W Gate trigger voltage ✽2 @ # ! @ # Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Tj=125°C, VD=1/2VDRM Junction to case ✽4 Junction to ambient ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀) ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS SURGE ON-STATE CURRENT (A) RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) Tj = 25°C CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 102 7 5 3 2 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IRGT III 101 7 5 3 VGT = 1.5V 2 PGM = 3W IGM = 2A GATE TRIGGER CURRENT (Tj = t °C) GATE TRIGGER CURRENT (Tj = 25 °C) VGM = 10V GATE VOLTAGE (V) IFGT I 100 7 5 3 2 Tj = 25°C IGT = 15mA PGM = 0.3W IRGT I VGD = 0.2V 10–1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) 103 7 5 4 3 2 102 7 5 4 3 2 102 2 3 5 7 103 2 3 5 7 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) 7 5 4 3 2 MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) 102 10 9 8 360° 7 CONDUCTION RESISTIVE, 6 INDUCTIVE 5 LOADS 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (°C) 140 120 100 80 60 AMBIENT TEMPERATURE (°C) CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 100 80 60 40 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, 20 INDUCTIVE LOADS NATURAL CONVECTION 120 120 t2.3 100 100 t2.3 60 60 t2.3 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 1 2 3 4 5 6 7 8 0 0 1 2 3 4 5 6 7 8 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25 °C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 3 2 100 (%) TYPICAL EXAMPLE 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 103 DISTRIBUTION 7 5 7 5 4 3 2 LACHING CURRENT VS. JUNCTION TEMPERATURE LACHING CURRENT (mA) HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25 °C) TYPICAL EXAMPLE 3 2 DISTRIBUTION 102 7 5 3 2 + T2 , G– TYPICAL EXAMPLE 101 7 5 4 3 2 101 7 5 3 + + 2 T2 , G –  TYPICAL  – VD = 12V 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) T2 , G  EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125°C 100 (%) 160 140 TYPICAL EXAMPLE BREAKOVER VOLTAGE (dv/dt = xV/ µ s ) BREAKOVER VOLTAGE (dv/dt = 1V/ µ s ) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25 °C) 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) I QUADRANT III QUADRANT GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω 100 (%) 103 7 5 4 3 2 IRGT III TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V IRGT I V A RG 6V V A RG 102 7 5 4 3 2 TEST PROCEDURE 1 IFGT I 6Ω TEST PROCEDURE 2 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 A V RG GATE TRIGGER PULSE WIDTH (µs) TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5KM OUTLINE DRAWING 10 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 6.5 ± 0.3 3 ± 0.3 E 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 ➀➁➂ 2.6 ± 0.2 ✽ Measurement point of case temperature q IT (RMS) .................................................................. 5A q VDRM ................................................................. 600V q IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) ✽3 q UL Recognized: Yellow Card No.E80276(N) File No. E80271 ➁ ➀ ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state Non-repetitive peak off-state voltage✽1 voltage✽1 Voltage class 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc=128°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 5 50 10.4 3 0.3 10 2 –40 ~ +150 –40 ~ +150 Unit A A A 2s W W V A °C °C g V Mar. 2002 Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case 2.0 2000 ✽1. Gate open. MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) Rth (j-a) Gate trigger current ✽2 Gate non-trigger voltage Thermal resistance Thermal resistance Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=150°C, VDRM applied Tc=25°C, ITM=7A, Instantaneous measurement Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Limits Min. — — — — — — — — 0.2/0.1 — — Typ. — — — — — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 15 ✽3 15 ✽3 15 ✽3 — 3.8 50 Unit mA V V V V mA mA mA V °C/ W °C/ W Gate trigger voltage ✽2 @ # ! @ # Tj=25°C, VD=6V, RL=6Ω, RG=330Ω Tj=125°C/150°C, VD=1/2VDRM Junction to case ✽4 Junction to ambient ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀) ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 SURGE ON-STATE CURRENT (A) 7 5 RATED SURGE ON-STATE CURRENT 100 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) 3 2 101 7 5 3 2 Tj = 150°C 100 7 5 3 2 Tj = 25°C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10–1 0.5 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 5 3 2 GATE VOLTAGE (V) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 VGM = 10V PGM = 3W IGM = 2A TYPICAL EXAMPLE IRGT III IRGT I 101 7 5 3 VGT = 1.5V 2 100 7 5 3 2 Tj = 25°C IGT = 15mA PGM = 0.3W GATE TRIGGER CURRENT (Tj = t °C) GATE TRIGGER CURRENT (Tj = 25 °C) 102 7 5 3 2 IFGT I 101 7 5 3 2 10–1 7 VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (°C/W) 102 2 3 5 7 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 7 GATE TRIGGER VOLTAGE (Tj = t °C) GATE TRIGGER VOLTAGE (Tj = 25 °C) 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (°C/W) 7 5 4 3 2 MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) 102 10 9 8 360° 7 CONDUCTION RESISTIVE, 6 INDUCTIVE 5 LOADS 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 101 7 5 4 3 2 100 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CASE TEMPERATURE (°C) 140 120 100 80 360° 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 1 2 3 60 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 120 120 t2.3 140 100 100 t2.3 120 60 60 t2.3 100 ALL FINS ARE BLACK PAINTED 80 ALUMINUM AND GREASED 60 CURVES APPLY REGARDLESS OF 40 CONDUCTION ANGLE RESISTIVE, 20 INDUCTIVE LOADS NATURAL CONVECTION 4 5 6 7 8 0 0 1 2 3 4 5 6 7 8 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t °C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25 °C) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURALCONVECTION 140 NO FINS,CURVES APPLY REGARDLESS 120 OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE 100 LOADS 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 106 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 100 (%) TYPICAL EXAMPLE 105 104 103 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 4 3 2 101 7 5 4 3 2 VD = 12V 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 103 7 5 3 2 LACHING CURRENT VS. JUNCTION TEMPERATURE + T2 , G+ TYPICAL – T2 , G– EXAMPLE HOLDING CURRENT (Tj = t °C) HOLDING CURRENT (Tj = 25 °C) LACHING CURRENT (mA) DISTRIBUTION TYPICAL EXAMPLE DISTRIBUTION 102 7 5 3 2 + T2 , G– TYPICAL EXAMPLE 101 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM The product guaranteed maximum junction temperature 150°C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125°C) 160 140 TYPICAL EXAMPLE Tj = 125°C 160 140 TYPICAL EXAMPLE BREAKOVER VOLTAGE (dv/dt = xV/ µ s ) BREAKOVER VOLTAGE (dv/dt = 1V/ µ s ) BREAKOVER VOLTAGE (Tj = t °C) BREAKOVER VOLTAGE (Tj = 25 °C) 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 120 III QUADRANT 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) I QUADRANT 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150°C) TYPICAL EXAMPLE Tj = 125°C 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 160 140 IRGT III TYPICAL EXAMPLE BREAKOVER VOLTAGE (dv/dt = xV/ µ s ) BREAKOVER VOLTAGE (dv/dt = 1V/ µ s ) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) I QUADRANT III QUADRANT IRGT I 102 7 5 4 3 2 IFGT I 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 6Ω RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC LOAD 6V V A RG 6V V A RG C1 R1 C1 = 0.1~0.47µF R1 = 47~100Ω C0 R0 C0 = 0.1µF R0 = 100Ω TEST PROCEDURE 1 6Ω TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Mar. 2002