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BCR5LM-12LB

BCR5LM-12LB

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

  • 描述:

    BCR5LM-12LB - Triac - Renesas Technology Corp

  • 数据手册
  • 价格&库存
BCR5LM-12LB 数据手册
Preliminary Datasheet BCR5LM-12LB Triac Medium Power Use Features     IT (RMS) : 5 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 20 mA Viso : 1800 V  The Product guaranteed maximum junction temperature 150C  Insulated Type  Planar Type  UL Recognized : File No. E223904 R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Switching mode power supply, light dimmer, electronic flasher unit, Television, Stereo system, refrigerator, Washing machine, infrared kotatsu, and carper, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Parameter Repetitive peak off-state voltage Non-repetitive peak off-state voltageNote1 Note1 Symbol VDRM VDSM Ratings 5 50 10.4 5 0.5 10 2 –40 to +150 –40 to +150 1.5 1800 Unit A A A2s W W V A C C g V Voltage class 12 600 720 Unit V V Parameter RMS on-state current Surge on-state current I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Conditions Commercial frequency, sine full wave 360°conduction, Tc = 113C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1  T2  G terminal to case R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 1 of 7 BCR5LM-12LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2       Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2/0.1 — 5/1 Typ. — — — — — — — — — — — Max. 2.0 1.8 1.5 1.5 1.5 20 20 20 — 4.9 — Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 7 A, instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C/150C Gate trigger curentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = –2.5 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Main Current Main Voltage (dv/dt)c R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 2 of 7 BCR5LM-12LB Preliminary Performance Curves Maximum On-State Characteristics 10 7 5 3 2 10 7 5 3 2 10 7 5 3 2 10 –1 0 1 2 Rated Surge On-State Current 100 Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 00 10 23 5 7 101 23 5 7 102 On-State Current (A) Tj = 150°C Tj = 25°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 102 PG(AV) = 0.5W VGM = 10V PGM = 5W Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 IFGT I Typical Example IRGT III IRGT I Gate Voltage (V) 101 VGT 100 IRGT I VGD = 0.1V IGM = 2A IFGT I, IRGT III 10–1 10–2 100 101 102 103 104 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 10 –60 –40 –20 0 20 40 60 80 100 120 140 160 1 3 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 103 104 Typical Example 100 101 102 Junction Temperature (°C) Conduction Time (Cycles at 60Hz) R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 3 of 7 BCR5LM-12LB Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 1 3 Preliminary Maximum On-State Power Dissipation 10 On-State Power Dissipation (W) No Fins 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 360° Conduction Resistive, inductive loads 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 6 7 8 9 10 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 140 Curves apply regardless of conduction angle 160 Allowable Ambient Temperature vs. RMS On-State Current Ambient Temperature (°C) 140 120 100 80 All fins are black 60 painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 1 2 3 4 5 120 120 t2.3 100 100 t2.3 60 60 t2.3 Case Temperature (°C) 120 100 80 60 40 20 0 360° Conduction Resistive, inductive loads 0 1 2 3 4 5 6 7 8 6 7 8 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 –60 –40–20 0 20 40 60 80 100 120 140 160 RMS On-State Current (A) Junction Temperature (°C) R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 4 of 7 BCR5LM-12LB Holding Current vs. Junction Temperature 10 7 5 2 Preliminary Latching Current vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 10 7 5 3 2 10 0 1 3 VD = 12V Distribution Typical Example T2+, G+ Typical Example T2–, G– Distribution T2+, G– Typical Example 3 2 101 7 5 3 2 10 –60 –40–20 0 20 40 60 80 100 120 140 160 0 Latching Current (mA) Holding Current (mA) –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 160 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Typical Example Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 140 120 III Quadrant Typical Example Tj = 125°C 100 80 60 40 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 140 120 100 80 60 40 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant III Quadrant Commutation Characteristics (Tj=125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 7 5 3 2 10 7 5 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz I Quadrant 3 Minimum Characteristics 2 Value 100 70 10 III Quadrant 23 5 7 101 23 5 7 102 Rate of Rise of Off-State Voltage (V/μs) Rate of Decay of On-State Commutating Current (A/ms) R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 5 of 7 BCR5LM-12LB Gate Trigger Current vs. Gate Current Pulse Width Preliminary Commutation Characteristics (Tj=150°C) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 7 5 3 2 10 7 5 3 2 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time I Quadrant III Quadrant Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 3 IRGT I 2 102 7 5 3 2 10 0 10 1 Typical Example IRGT III IFGT I Minimum Characteristics Value 100 70 10 23 5 7 10 1 23 5 7 10 2 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 6V V A 330Ω 6V V A 330Ω R1 C0 R0 Test Procedure I 6Ω Test Procedure II C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6V V A 330Ω Test Procedure III R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 6 of 7 BCR5LM-12LB Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 3.0 ± 0.3 15.0 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 6.5 ± 0.3 2.6 ± 0.2 4.5 ± 0.2 Order Code Lead form Straight type Lead form Standard packing Plastic Magazine (Tube) Plastic Magazine (Tube) Quantity 50 50 Standard order code Type name Type name – Lead forming code Standard order code example BCR5LM-12LB BCR5LM-12LB-A8 Note : Please confirm the specification about the shipping in detail. R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. 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Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 http://www.renesas.com © 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0
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