BCR5LM-12LB

Preliminary Datasheet BCR5LM-12LB Triac Medium Power Use Features     IT (RMS) : 5 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 20 mA Viso : 1800 V  The Product guaranteed maximum junction temperature 150C  Insulated Type  Planar Type  UL Recognized : File No. E223904 R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Switching mode power supply, light dimmer, electronic flasher unit, Television, Stereo system, refrigerator, Washing machine, infrared kotatsu, and carper, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general purpose control applications Parameter Repetitive peak off-state voltage Non-repetitive peak off-state voltageNote1 Note1 Symbol VDRM VDSM Ratings 5 50 10.4 5 0.5 10 2 –40 to +150 –40 to +150 1.5 1800 Unit A A A2s W W V A C C g V Voltage class 12 600 720 Unit V V Parameter RMS on-state current Surge on-state current I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Conditions Commercial frequency, sine full wave 360°conduction, Tc = 113C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1  T2  G terminal to case R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 1 of 7 BCR5LM-12LB Preliminary Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2       Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2/0.1 — 5/1 Typ. — — — — — — — — — — — Max. 2.0 1.8 1.5 1.5 1.5 20 20 20 — 4.9 — Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 7 A, instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C/150C Gate trigger curentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutation voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = –2.5 A/ms 3. Peak off-state voltage VD = 400 V Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Main Current Main Voltage (dv/dt)c R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 2 of 7 BCR5LM-12LB Preliminary Performance Curves Maximum On-State Characteristics 10 7 5 3 2 10 7 5 3 2 10 7 5 3 2 10 –1 0 1 2 Rated Surge On-State Current 100 Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 00 10 23 5 7 101 23 5 7 102 On-State Current (A) Tj = 150°C Tj = 25°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 102 PG(AV) = 0.5W VGM = 10V PGM = 5W Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 IFGT I Typical Example IRGT III IRGT I Gate Voltage (V) 101 VGT 100 IRGT I VGD = 0.1V IGM = 2A IFGT I, IRGT III 10–1 10–2 100 101 102 103 104 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 10 –60 –40 –20 0 20 40 60 80 100 120 140 160 1 3 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 103 104 Typical Example 100 101 102 Junction Temperature (°C) Conduction Time (Cycles at 60Hz) R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 3 of 7 BCR5LM-12LB Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 1 3 Preliminary Maximum On-State Power Dissipation 10 On-State Power Dissipation (W) No Fins 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 360° Conduction Resistive, inductive loads 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 6 7 8 9 10 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 140 Curves apply regardless of conduction angle 160 Allowable Ambient Temperature vs. RMS On-State Current Ambient Temperature (°C) 140 120 100 80 All fins are black 60 painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 1 2 3 4 5 120 120 t2.3 100 100 t2.3 60 60 t2.3 Case Temperature (°C) 120 100 80 60 40 20 0 360° Conduction Resistive, inductive loads 0 1 2 3 4 5 6 7 8 6 7 8 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 –60 –40–20 0 20 40 60 80 100 120 140 160 RMS On-State Current (A) Junction Temperature (°C) R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 4 of 7 BCR5LM-12LB Holding Current vs. Junction Temperature 10 7 5 2 Preliminary Latching Current vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 10 7 5 3 2 10 0 1 3 VD = 12V Distribution Typical Example T2+, G+ Typical Example T2–, G– Distribution T2+, G– Typical Example 3 2 101 7 5 3 2 10 –60 –40–20 0 20 40 60 80 100 120 140 160 0 Latching Current (mA) Holding Current (mA) –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 160 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Typical Example Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 140 120 III Quadrant Typical Example Tj = 125°C 100 80 60 40 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 140 120 100 80 60 40 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant III Quadrant Commutation Characteristics (Tj=125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 7 5 3 2 10 7 5 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz I Quadrant 3 Minimum Characteristics 2 Value 100 70 10 III Quadrant 23 5 7 101 23 5 7 102 Rate of Rise of Off-State Voltage (V/μs) Rate of Decay of On-State Commutating Current (A/ms) R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 5 of 7 BCR5LM-12LB Gate Trigger Current vs. Gate Current Pulse Width Preliminary Commutation Characteristics (Tj=150°C) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 7 5 3 2 10 7 5 3 2 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time I Quadrant III Quadrant Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 3 IRGT I 2 102 7 5 3 2 10 0 10 1 Typical Example IRGT III IFGT I Minimum Characteristics Value 100 70 10 23 5 7 10 1 23 5 7 10 2 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 6V V A 330Ω 6V V A 330Ω R1 C0 R0 Test Procedure I 6Ω Test Procedure II C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6V V A 330Ω Test Procedure III R07DS0065EJ0100 Rev.1.00 Jul 27, 2010 Page 6 of 7 BCR5LM-12LB Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 3.0 ± 0.3 15.0 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 6.5 ± 0.3 2.6 ± 0.2 4.5 ± 0.2 Order Code Lead form Straight type Lead form Standard packing Plastic Magazine (Tube) Plastic Magazine (Tube) Quantity 50 50 Standard order code Type name Type name – Lead forming code Standard order code example BCR5LM-12LB BCR5LM-12LB-A8 Note : Please confirm the specification about the shipping in detail. 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