BCR5PM-12L

BCR5PM-12L Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0460-0300 Rev.3.00 Mar 06, 2007 Features • IT (RMS) : 5 A • VDRM : 600 V • IFGTI, IRGTI, IRGTIII : 20 mA (10 mA)Note5 • Viso : 2000 V • Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, solenoid driver, small motor control, copying machine, electric tool, electric heater control, and other general controlling device Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125°C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Rev.3.00 Mar 06, 2007 page 1 of 7 BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C) Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 5 50 10.4 3 0.3 10 2 – 40 to +150 – 40 to +150 2.0 2000 Unit A A A2s W W V A °C °C g V Conditions Commercial frequency, sine full wave 360° conduction, Tc = 120°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2/0.1 — 5/1 Typ. — — — — — — — — — — — Max. 2.0 1.8 1.5 1.5 1.5 20Note5 20Note5 20Note5 — 4.0 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 7 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125°C/150°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. 3. 4. 5. Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1) Test conditions Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = – 2.5 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c Rev.3.00 Mar 06, 2007 page 2 of 7 BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C) Performance Curves Maximum On-State Characteristics 10 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10 –1 2 Rated Surge On-State Current 100 Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 00 10 23 5 7 10 1 On-State Current (A) Tj = 150°C Tj = 25°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 23 5 7 10 2 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 5 3 2 VGM = 10V Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 Typical Example IRGT III IRGT I Gate Voltage (V) 10 7 PG(AV) = 5 0.3W 3 VGT = 1.5V 2 100 7 5 3 2 IGT = 20mA 1 PGM = 3W IGM = 2A 102 7 5 3 2 IFGT I 101 7 5 3 2 10–1 VGD = 0.1V 7 51 2 10 2 3 5 710 2 3 5 7103 2 3 5 7104 100 –60 –40–20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 10 7 5 3 2 101 –60 –40–20 0 20 40 60 80 100 120 140 160 2 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 10 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –1 0 1 2 10 2 3 5 710 2 3 5 710 2 3 5 710 2 2 3 5 710 3 23 5 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60Hz) Rev.3.00 Mar 06, 2007 page 3 of 7 BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 1 3 Maximum On-State Power Dissipation 10 On-State Power Dissipation (W) No Fins 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 360° Conduction Resistive, inductive loads 10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710 2 3 4 5 6 7 8 9 10 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) Case Temperature (°C) 140 120 100 80 60 40 140 120 100 80 All fins are black 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 60 painted aluminum 40 Curves apply regardless 20 Resistive, inductive loads 0 0 Natural convection of conduction angle and greased 360° Conduction 20 Resistive, inductive loads 0 0 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 –60 –40–20 0 20 40 60 80 100 120 140 160 RMS On-State Current (A) Junction Temperature (°C) Rev.3.00 Mar 06, 2007 page 4 of 7 BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C) Holding Current vs. Junction Temperature 102 7 5 VD = 12V Distribution Typical Example Latching Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –60 –40–20 0 20 40 60 80 100 120 140 160 T2+, G+ Typical Example T2–, G– Distribution T2+, G– Typical Example 3 2 101 7 5 3 2 100 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Latching Current (mA) Holding Current (mA) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) 160 140 120 100 80 60 40 20 0 –60 –40–20 0 20 40 60 80 100 120 140 160 Typical Example Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 140 120 III Quadrant Typical Example Tj = 125°C 100 80 60 40 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 140 120 100 80 60 40 20 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 I Quadrant III Quadrant Commutation Characteristics (Tj=125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 10 7 5 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant 3 Minimum Characteristics 2 Value 100 70 10 III Quadrant 23 5 7 10 1 23 5 7 10 2 Rate of Rise of Off-State Voltage (V/µs) Rate of Decay of On-State Commutating Current (A/ms) Rev.3.00 Mar 06, 2007 page 5 of 7 BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C) Gate Trigger Current vs. Gate Current Pulse Width Commutation Characteristics (Tj=150°C) Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 3 2 10 7 5 3 2 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time I Quadrant III Quadrant Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz 10 7 5 3 IRGT I 2 102 7 5 3 2 10 0 10 1 3 Typical Example IRGT III IFGT I Minimum Characteristics Value 10 70 10 0 23 5 7 10 1 23 5 7 10 2 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 6V V A 330Ω 6V V A 330Ω R1 C0 R0 Test Procedure I 6Ω Test Procedure II C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω 6V V A 330Ω Test Procedure III Rev.3.00 Mar 06, 2007 page 6 of 7 BCR5PM-12L (The product guaranteed maximum junction temperature of 150°C) Package Dimensions Package Name TO-220F JEITA Package Code SC-67 RENESAS Code PRSS0003AA-A Previous Code  MASS[Typ.] 2.0g Unit: mm 10.5Max 5.2 2.8 5.0 1.2 17 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 2.54 8.5 0.5 2.6 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name +B Type name +B – Lead forming code Standard order code example BCR5PM-12LB BCR5PM-12LB-A8 Note : Please confirm the specification about the shipping in detail. Rev.3.00 Mar 06, 2007 page 7 of 7 4.5 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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