BCR5PM-14LG

Preliminary Datasheet BCR5PM-14LG Triac Medium Power Use Features     IT (RMS) : 5 A VDRM : 800 V (Tj = 125C) IFGTI, IRGTI, IRGTIII : 30 mA Viso : 2000 V R07DS0087EJ0200 (Previous: REJ03G1558-0100) Rev.2.00 Jul 27, 2010  The Product guaranteed maximum junction temperature 150C  Insulated Type  Planar Type  UL Recognized: File No. E223904 Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F ) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Switching mode power supply, Washing machine, small motor controller, copying machine, electric heater control, and other general controlling devices Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 14 800 700 840 Unit V V V Conditions Tj = 125C Tj = 150C R07DS0087EJ0200 Rev.2.00 Jul 27, 2010 Page 1 of 7 BCR5PM-14LG Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 5 50 10.4 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 2000 Unit A A A2s W W V A C C g V Conditions Preliminary Commercial frequency, sine full wave 360° conduction, Tc = 113C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1  T2  G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2       Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2/0.1 — 5/1 Typ. — — — — — — — — — — — Max. 2.0 1.8 1.5 1.5 1.5 30 30 30 — 4.9 — Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 7 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C/150C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = – 2.5 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c R07DS0087EJ0200 Rev.2.00 Jul 27, 2010 Page 2 of 7 BCR5PM-14LG Preliminary Performance Curves Maximum On-State Characteristics 10 7 5 3 2 10 7 5 3 2 10 7 5 3 2 10 –1 0 1 2 Rated Surge On-State Current 100 Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 00 10 23 5 7 10 1 On-State Current (A) Tj = 150°C Tj = 25°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 23 5 7 10 2 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 5 3 2 VGM = 10V Gate Trigger Current vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 3 PG(AV) = 0.5W PGM = 5W IGM = 2A Typical Example IRGT III IRGT I Gate Voltage (V) 101 7 5 3 2 10 7 5 3 2 10 –1 0 VGT = 1.5V IFGT I VGD = 0.1V 7 IFGT I IRGT I, IRGT III 5 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 10 7 5 3 2 10 7 5 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 2 3 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 2 3 5 7 103 2 3 5 7 104 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60Hz) R07DS0087EJ0200 Rev.2.00 Jul 27, 2010 Page 3 of 7 BCR5PM-14LG Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) 10 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 1 3 Preliminary Maximum On-State Power Dissipation 10 On-State Power Dissipation (W) No Fins 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 360° Conduction Resistive, inductive loads 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 6 7 8 9 10 Conduction Time (Cycles at 60Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 Curves apply regardless of conduction angle 160 Allowable Ambient Temperature vs. RMS On-State Current Ambient Temperature (°C) Case Temperature (°C) 140 120 100 80 60 40 140 120 100 80 60 60 × 60 × t2.3 100 × 100 × t2.3 120 × 120 × t2.3 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 360° Conduction 20 Resistive, inductive loads 0 0 1 2 3 4 All fins are black painted aluminum and greased 5 6 7 8 0 0 1 2 3 4 5 6 7 8 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 –60 –40–20 0 20 40 60 80 100 120 140 160 RMS On-State Current (A) Junction Temperature (°C) R07DS0087EJ0200 Rev.2.00 Jul 27, 2010 Page 4 of 7 BCR5PM-14LG Holding Current vs. Junction Temperature 102 7 5 VD = 12V Distribution Typical Example Preliminary Latching Current vs. Junction Temperature 10 7 5 3 2 102 7 5 3 2 10 7 5 3 2 100 –60 –40–20 0 20 40 60 80 100 120 140 160 1 3 T2+, G+ Typical Example T2–, G– Distribution T2+, G– Typical Example 3 2 101 7 5 3 2 100 –60 –40–20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Latching Current (mA) Holding Current (mA) Junction Temperature (°C) 160 140 120 100 80 60 40 20 Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Typical Example Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 140 120 100 80 60 40 20 I Quadrant III Quadrant Typical Example Tj = 125°C 0 –60 –40–20 0 20 40 60 80 100 120 140 160 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 140 120 100 80 60 40 20 I Quadrant III Quadrant Commutation Characteristics (Tj=125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 102 7 5 3 2 101 7 5 3 2 Minimum Characteristics Value I Quadrant Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C III Quadrant Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz 01 10 2 3 5 7102 2 3 5 7103 2 3 5 7104 100 100 2 3 5 7101 2 3 5 7102 2 3 5 7103 Rate of Rise of Off-State Voltage (V/μs) Rate of Decay of On-State Commutating Current (A/ms) R07DS0087EJ0200 Rev.2.00 Jul 27, 2010 Page 5 of 7 BCR5PM-14LG Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 10 7 5 3 IRGT I 2 102 7 5 3 2 101 0 10 23 5 7 101 23 IFGT I 3 Preliminary Commutation Characteristics (Tj=150°C) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 102 7 5 3 2 10 7 5 1 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz Typical Example IRGT III I Quadrant 3 Minimum 2 Characteristics Value 0 III Quadrant 10 0 1 2 3 10 2 3 5 710 2 3 5 710 2 3 5 710 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 6V V A 330Ω 6V V A 330Ω R1 C0 R0 Test Procedure I 6Ω Test Procedure II C1 = 0.1 to 0.47μF C0 = 0.1μF R1 = 47 to 100Ω R0 = 100Ω 6V V A 330Ω Test Procedure III R07DS0087EJ0200 Rev.2.00 Jul 27, 2010 Page 6 of 7 BCR5PM-14LG Preliminary Package Dimensions Package Name TO-220F JEITA Package Code SC-67 RENESAS Code PRSS0003AA-A Previous Code ⎯ MASS[Typ.] 2.0g Unit: mm 10.5Max 5.2 2.8 5.0 1.2 17 φ3.2 ± 0.2 13.5Min 3.6 1.3Max 0.8 2.54 2.54 8.5 0.5 2.6 Order Code Lead form Straight type Lead form Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Standard order code example BCR5PM-14LG BCR5PM-14LG-A8 Note : Please confirm the specification about the shipping in detail. 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