BCR6AM-12LB

BCR6AM-12LB Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C) REJ03G0453-0300 Rev.3.00 Nov 30, 2007 Features • IT (RMS) : 6 A • VDRM : 600 V • IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6 • Non-Insulated Type • Planar Passivation Type Outline RENESAS Package code: PRSS0004AA-A (Package name: TO-220) 4 2, 4 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 1 12 3 Applications Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo systems, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid state relay, copying machine, electric heater control, and other general purpose control applications Warning 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum junction temperature of 125°C will be supplied. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V REJ03G0453-0300 Page 1 of 7 Rev.3.00 Nov 30, 2007 BCR6AM-12LB (The product guaranteed maximum junction temperature of 150°C) Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg — Ratings 6 60 15 5 0.5 10 2 – 40 to +150 – 40 to +150 2.0 Unit A A A2s W W V A °C °C g Conditions Commercial frequency, sine full wave Note3 360° conduction, Tc = 128°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2/0.1 — 10/1 Typ. — — — — — — — — — — — Max. 2.0 1.7 1.5 1.5 1.5 30Note6 30Note6 30Note6 — 2.5 — Unit mA V V V V mA mA mA V °C/W V/µs Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 9 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C/150°C, VD = 1/2 VDRM Junction to caseNote3 Note4 Tj = 125°C/150°C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured at the T2 tab 1.5 mm away from the molded case. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1) Test conditions Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD 1. Junction temperature Tj = 125°C/150°C 2. Rate of decay of on-state commutating current (di/dt)c = – 3.0 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c REJ03G0453-0300 Page 2 of 7 Rev.3.00 Nov 30, 2007 BCR6AM-12LB (The product guaranteed maximum junction temperature of 150°C) Performance Curves Maximum On-State Characteristics 102 100 7 5 Rated Surge On-State Current Surge On-State Current (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 On-State Current (A) 3 2 101 7 5 3 2 100 7 5 0.5 Tj = 150°C Tj = 25°C 1.0 1.5 2.0 2.5 3.0 3.5 4.0 On-State Voltage (V) Conduction Time (Cycles at 60Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 3 2 VGM = 10V PG(AV) = 0.5W PGM = 5W 101 7 5 IGM = 2A 3 VGT = 1.5V 2 100 7 5 3 2 10–1 7 IFGT I IRGT I, IRGT III VGD = 0.1V 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 Typical Example Gate Voltage (V) IRGT III IFGT I IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 2 3 5 7 103 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Typical Example Junction Temperature (°C) Conduction Time (Cycles at 60Hz) REJ03G0453-0300 Page 3 of 7 Rev.3.00 Nov 30, 2007 BCR6AM-12LB (The product guaranteed maximum junction temperature of 150°C) Allowable Case Temperature vs. RMS On-State Current 160 140 Maximum On-State Power Dissipation 20 On-State Power Dissipation (W) 18 16 Case Temperature (°C) 360° Conduction 14 Resistive, 12 inductive loads 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 120 Curves apply regardless of conduction angle 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 1 2 3 4 5 6 7 8 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current 160 Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) 120 100 80 60 × 60 × t2.3 Ambient Temperature (°C) 140 120 × 120 × t2.3 100 × 100 × t2.3 140 120 100 80 60 40 20 0 0 0.5 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 1 2 3 4 5 6 7 8 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Repetitive Peak Off-State Current vs. Junction Temperature 106 Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 4 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 Typical Example Typical Example 105 104 102 7 5 4 3 2 103 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) REJ03G0453-0300 Page 4 of 7 Rev.3.00 Nov 30, 2007 BCR6AM-12LB (The product guaranteed maximum junction temperature of 150°C) Latching Current vs. Junction Temperature 103 7 5 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 Latching Current (mA) 3 2 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 2 T2+, G+ Typical Example T2–, G– 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 140 120 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Typical Example Tj = 125°C Typical Example Tj = 150°C III Quadrant III Quadrant I Quadrant I Quadrant Rate of Rise of Off-State Voltage (V/µs) Rate of Rise of Off-State Voltage (V/µs) Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 3 2 Critical Rate of Rise of Off-State Commutating Voltage (V/µs) 7 5 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 7 Minimum 5 Characteristics 3 2 Value Typical Example Tj = 125°C IT = 4A τ = 500µs VD = 200V f = 3Hz 7 5 3 2 101 7 5 3 2 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C IT = 4A τ = 500µs VD = 200V f = 3Hz I Quadrant III Quadrant I Quadrant Minimum Characteristics Value III Quadrant 100 70 10 23 5 7 101 23 5 7 102 100 70 10 23 5 7 101 23 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Rate of Decay of On-State Commutating Current (A/ms) REJ03G0453-0300 Page 5 of 7 Rev.3.00 Nov 30, 2007 BCR6AM-12LB (The product guaranteed maximum junction temperature of 150°C) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 IFGT I IRGT I Typical Example IRGT III 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω Recommended Circuit Values Around The Triac Load C1 6V V A 330Ω 6V V A 330Ω R1 C0 R0 Test Procedure I 6Ω Test Procedure II C1 = 0.1 to 0.47µF C0 = 0.1µF R0 = 100Ω R1 = 47 to 100Ω 6V V A 330Ω Test Procedure III REJ03G0453-0300 Page 6 of 7 Rev.3.00 Nov 30, 2007 BCR6AM-12LB (The product guaranteed maximum junction temperature of 150°C) Package Dimensions Package Name TO-220 JEITA Package Code SC-46 RENESAS Code PRSS0004AA-A Previous Code  MASS[Typ.] 2.0g Unit: mm 10.5Max 4.5 1.3 3.2 16Max 3.8Max 1.0 12.5Min 0.8 7.0 φ3.6 2.54 2.54 0.5 2.6 Order Code Lead form Straight type Lead form Note: Standard packing Vinyl sack Plastic Magazine (Tube) Quantity 100 50 Standard order code Type name Type name – Lead forming code Standard order code example BCR6AM-12LB BCR6AM-12LB-A8 Please confirm the specification about the shipping in detail. REJ03G0453-0300 Page 7 of 7 Rev.3.00 Nov 30, 2007 4.5Max Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. 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