BCR8FM-14LB#FA0

Data Sheet BCR8FM-14LB 700V - 8A - Triac R07DS1187EJ0400 Rev.4.00 Jan. 15, 2019 Medium Power Use Features • • • • • Insulated Type • Planar Passivation Type • Viso: 2000V IT (RMS) : 8 A VDRM : 800 V (Tj=125C) Tj: 150 °C IFGTI, IRGTI, IRGT III:30 mA(20mA) Note6 Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) Ordering code #BB0 #FA0 Ordering code #BH0 #BG0 #FG0 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 1 2 3 2 3 Application Washing machine, Power supply, Solid state relay, and other general purpose AC control applications. Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol Voltage class Unit Conditions VDRM 14 800 V Tj=125C V V Tj=150C VDSM 700 840 Parameter RMS on-state current Symbol IT (RMS) Ratings 8 Unit A Surge on-state current ITSM 80 A I2 t 26 A2s PGM PG (AV) 5 0.5 W W Peak gate voltage Peak gate current VGM IGM 10 2 V A Junction Temperature Storage temperature Tj Tstg –40 to +150 –40 to +150 C C Isolation voltage Note7 Viso 2000 V I2t for fusion Peak gate power dissipation Average gate power dissipation Conditions Commercial frequency, sine full wave 360conduction, Tc = 114C (#BH0, #BB0)Note2 Tc = 107C (#BG0, #FG0, #FA0)Note2 60 Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60 Hz, surge on-state current Ta=25C, AC 1 minute, T1 • T2 • G terminal to case Notes: 1. Gate open. 2. Please refer to the Ordering Information. R07DS1187EJ0400 Rev.4.00 Jan. 15, 2019 Page 1 of 8 BCR8FM-14LB Data Sheet Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote3 Gate trigger curentNote3 Symbol IDRM VTM Min. — — Typ. — — Max. 2.0 1.6 Unit mA V   VFGT VRGT — — — — 1.5 1.5 V V  VRGT — — 1.5 V  IFGT — — 30 Note6 mA mA mA   Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutation voltageNote5 Notes: 3. 4. 5. 6. 7. Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 12A, instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  IRGT IRGT — — — — 30 Note6 VGD 0.2 0.1 — — — — V Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Rth (j-c) — — 3.6 C/W — — 4.3 C/W 10 1 — — — — V/s Junction to caseNote4 (#BH0, #BB0)Note2 Junction to caseNote4 (#BG0, #FG0, #FA0)Note2 Tj = 125C Tj = 150C (dv/dt)c 30 Note6 Measurement using the gate trigger characteristics measurement circuit. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C /W. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below. High sensitivity (IGT20mA) is also available. (IGT item:1) Make sure that your finished product containing this device meets your safe isolation requirements. For safety, it's advisable that heatsink is electrically floating. Test conditions 1. Junction temperature Tj = 125°C/150°C Commutating voltage and current waveforms (inductive load) Supply Voltage Time 2. Rate of decay of on-state commutating current (di/dt)c = – 4.0 A/ms Main Current (di/dt)c Time 3. Peak off-state voltage VD = 400 V Main Voltage (dv/dt)c R07DS1187EJ0400 Rev.4.00 Jan. 15, 2019 Time VD Page 2 of 8 BCR8FM-14LB Data Sheet Performance Curves Maximum On-State Characteristics Rated Surge On-State Current Surge On-State Current (A) 100 Tj = 150°C 101 Tj = 25°C 100 0 1 2 3 20 101 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5W PGM = 5W IGM = 2A VGT = 1.5V 100 IFGT I IRGT I, IRGT III 101 102 VGD = 0.1V 103 104 103 Typical Example IRGT III 102 101 - 40 IFGT I IRGT I 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width 103 Typical Example 102 101 - 40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 40 Conduction Time (Cycles at 60Hz) 101 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 60 On-State Voltage (V) VGM = 10V 10- 1 80 0 100 4 0 40 80 120 Junction Temperature (°C) R07DS1187EJ0400 Rev.4.00 Jan. 15, 2019 160 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) On-State Current (A) 102 103 Typical Example IFGT I IRGT I IRGT III 102 101 100 101 102 Gate Current Pulse Width (s) Page 3 of 8 BCR8FM-14LB Data Sheet 103 4.0 3.0 2.0 1.0 #BH0,#BB0 #BG0,#FG0,#FA0 0 10-1 100 101 103 No Fins 102 101 100 10- 1 101 102 103 104 105 Conduction Time (Cycles at 60Hz) Conduction Time (Cycles at 60Hz) Maximum On-State Power Dissipation Allowable Case Temperature vs. RMS On-State Current 160 14 140 12 10 8 6 4 360° Conduction Resistive, inductive loads 2 2 4 6 8 Case Temperature (°C) 16 0 #BH0,#BB0 #BG0,#FG0,#FA0 120 100 80 60 40 0 0 10 12 14 16 360° Conduction Resistive, inductive loads 20 2 4 6 8 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Tem perature vs. RMS On-State Current 160 Ambient Temperature (°C) 102 Transient Thermal Impedance (°C/W) 102 5.0 Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 140 #BH0,#BB0 #BG0,#FG0,#FA0 120 100 ×100 ×t2.3 100 60 ×60 ×t2.3 80 60 40 20 0 0 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection All fins are black painted aluminum and greased 2 4 6 8 10 12 14 16 RMS On-State Current (A) R07DS1187EJ0400 Rev.4.00 Jan. 15, 2019 160 Ambient Temperature (°C) On-State Power Dissipation (W) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to case) Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 RMS On-State Current (A) Page 4 of 8 BCR8FM-14LB Data Sheet Latching Current vs. Junction Temperature Holding Current vs. Junction Temperature 103 Typical Distribution Typical Distribution III Quadrant Typical Example 101 I Quadrant Typical Example VD=12V 100 - 40 0 40 80 120 Latching Current (mA) Holding Current (mA) 102 T2+,G Typical Example 102 101 T2+,G+ T2- ,GTypical Example 100 - 40 160 140 120 100 80 60 40 20 0 40 80 120 160 Breakover Voltage (dv/dt = xV/s) × 100 (%) Breakover Voltage (dv/dt = 1V/s) Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/s) R07DS1187EJ0400 Rev.4.00 Jan. 15, 2019 Repetitive Peak Off-State Current (Tj = t°C) ×100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Typical Example Breakover Voltage (dv/dt = xV/s) × 100 (%) Breakover Voltage (dv/dt = 1V/s) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Breakover Voltage vs. Junction Temperature 0 - 40 40 80 120 160 Junction Temperature (°C) Junction Temperature (°C) 160 0 Repetitive Peak Off-State Current vs. Junction Temperature 106 Typical Example 105 104 103 102 - 40 0 40 80 120 160 Junction Temperature (°C) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) 160 Typical Example Tj = 150°C 140 120 III Quadrant 100 80 60 40 I Quadrant 20 0 1 10 102 103 104 Rate of Rise of Off-State Voltage (V/s) Page 5 of 8 Data Sheet Commutation Characteristics (Tj=125°C) Commutation Characteristics (Tj=150°C) 102 102 Typical Example Tj = 125°C IT = 4 A t = 500 s VD = 200 V f = 3 Hz 101 Main Voltage (dv/dt)c Main Current IT Time Critical Rate of Rise of Off-State Commutating Voltage (V/s) Critical Rate of Rise of Off-State Commutating Voltage (V/s) BCR8FM-14LB VD (di/dt)c t Time Minimum Value I Quadrant III Quadrant 100 100 101 102 Main Current IT Typical Example Tj = 150°C IT = 4 A t = 500 s VD = 200 V f = 3 Hz Time VD (di/dt)c t Time 101 I Quadrant III Quadrant 100 Minimum Value 100 Rate of Decay of On-State Commutating Current (A/ms) 101 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Characteristics Test Circuits 6 Main Voltage (dv/dt)c 6 Recommended peripheral components for Triac Load C1 A 6V 330 V Test Procedure I A 6V V 330 Test Procedure II R1 C0 R0 C1 = 0.1 to 0.47 F C0 = 0.1 F R1 = 47 to 100 R0 = 100  6 A 6V V 330 Test Procedure III R07DS1187EJ0400 Rev.4.00 Jan. 15, 2019 Page 6 of 8 BCR8FM-14LB Data Sheet Package Dimensions Ordering code: #BG0, #BH0, #FG0 JEITA Package Code - RENESAS Code Previous Code MASS (Typ) [g] PRSS0003AP-A TO-220FPA 1.65 Unit: mm 2.7±0.2 f 3.2±0.2 1.95±0.3 15.0±0.3 6.9±0.3 10.0±0.3 0.745±0.2 13.0±0.5 0.395±0.2 1.14±0.2 0.69±0.15 0.60 +0.19 - 0.11 2.54±0.25 3.2±0.2 4.5±0.2 2.54±0.25 R07DS1187EJ0400 Rev.4.00 Jan. 15, 2019 Page 7 of 8 BCR8FM-14LB Data Sheet Package Dimensions Ordering code: #BB0, #FA0 Package Name TO-220FP JEITA Package Code RENESAS Code PRSS0003AG-A MASS[Typ.] 1.9g Previous Code Unit: mm 10.16±0.20 2.54±0.20 6.68 ±0.20 3.3±0.2 1.28 ±0.30 3.18 ±0.20 12.98 ±0.30 15.87±0.20 f 3.18±0.10 Max 1.47 2.76 ±0.20 0.80±0.20 0.50 4.7±0.2 5.08 ±0.20 Ordering Information Orderable Part Number BCR8FM-14LB#BG0 Package TO-220FPA Quantity Note8 Remark 50 pcs./ tube Straight type Quality Grade Note10 General Industrial & BCR8FM-14LB-1#BG0 BCR8FM-14LB-#BG0 TO-220FPA TO-220FPA 50 pcs./ tube 50 pcs./ tube Straight type, IGT item:1 :Lead form type General Consumer Use BCR8FM-14LB1#BG0 BCR8FM-14LB#BH0 TO-220FPA TO-220FPA 50 pcs./ tube 50 pcs./ tube :Lead form type, IGT item:1 Straight type BCR8FM-14LB-1#BH0 BCR8FM-14LB-#BH0 TO-220FPA TO-220FPA 50 pcs./ tube 50 pcs./ tube Straight type, IGT item:1 :Lead form type BCR8FM-14LB1#BH0 BCR8FM-14LB#BB0 TO-220FPA TO-220FP 50 pcs./ tube 50 pcs./ tube :Lead form type, IGT item:1 EOL announced BCR8FM-14LB#FG0 BCR8FM-14LB-#FG0 TO-220FPA TO-220FPA 50 pcs./ tube 50 pcs./ tube Straight type :Lead form type BCR8FM-14LB#FA0 BCR8FM-14LB-#FA0 TO-220FP TO-220FP 50 pcs./ tube 50 pcs./ tube EOL announced EOL announced Special Consumer Use Note9 Notes: 8. Please confirm the specification about the shipping in detail. 9. “Special Consumer Use” grade product is not tested for the “Temperature Humidity Bias” reliability in the condition of rated VDRM. Please be sure to implement qualification tests and judge whether the product meets your criteria. If necessary, please apply moisture-proof measures according to user’s conditions. 10. For further details about the classification in the Standard quality grade, please refer to the application note. R07DS1187EJ0400 Rev.4.00 Jan. 15, 2019 Page 8 of 8 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits, software, and information in the design of your product or system. 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