BCR8LM-14LD-A8

Preliminary Datasheet BCR8LM-14LD Triac Medium Power Use Features     IT (RMS) : 8 A VDRM : 700 V IFGTI , IRGTI, IRGTIII : 50 mA Viso : 1800 V  The product guaranteed maximum junction temperature 150C.  Insulated Type  Planar Type  UL Recognized : File No. E223904 R07DS0062EJ0100 Rev.1.00 Jul 27, 2010 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 23 Applications Motor control, heater control Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Symbol VDRM VDSM Voltage class 14 700 800 Unit V V R07DS0062EJ0100 Rev.1.00 Jul 27, 2010 Page 1 of 7 BCR8LM-14LD Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Notes: 1. Gate open. Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg — Viso Ratings 8 48 9.5 5 0.5 10 2 – 40 to +150 – 40 to +150 1.5 1800 Unit A A A2s W W V A C C g V Conditions Preliminary Commercial frequency, sine full wave 360° conduction, Tc = 85C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta = 25C, AC 1 minute, T1·T2·G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2       Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. — — — — — — — — 0.2 — 10 Typ. — — — — — — — — — — — Max. 2.0 2.0 1.5 1.5 1.5 50 50 50 — 4.9 — Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 125C, VDRM applied Tc = 25C, ITM = 12 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 25C, VD = 6 V, RL = 6 , RG = 330  Tj = 125C, VD = 1/2 VDRM Junction to caseNote3 Tj = 125C Gate trigger currentNote2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note4 commutating voltage Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Supply Voltage Time (di/dt)c Time Time VD Test conditions 1. Junction temperature Tj = 125C 2. Rate of decay of on-state commutating current (di/dt)c = – 4 A/ms 3. Peak off-state voltage VD = 400 V Main Current Main Voltage (dv/dt)c R07DS0062EJ0100 Rev.1.00 Jul 27, 2010 Page 2 of 7 BCR8LM-14LD Preliminary Performance Curves Maximum On-State Characteristics 102 7 5 Rated Surge On-State Current 60 On-State Current (A) 3 2 101 7 5 3 2 100 7 5 3 2 10-1 Surge On-State Current (A) 1.8 2.2 2.6 3.0 3.4 3.8 Tj = 25°C 50 40 30 20 10 0 100 0.6 1.0 1.4 2 3 5 7 101 2 3 5 7 102 On-State Voltage (V) Conduction Time (Cycles at 60 Hz) Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Characteristics (I, II and III) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101 VGD = 0.2 V VGT = 1.5 V PG(AV) = 0.5 W VGM = 10 V PGM =5 W Gate Trigger Current vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Typical Example IRGTIII Gate Voltage (V) IGM = 2 A IFGTI IFGT I IRGT II IRGT III IRGTI 23 5 7102 23 5 7 103 23 5 7 104 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) Gate Trigger Voltage vs. Junction Temperature 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Maximum Transient Thermal Impedance Characteristics (Junction to case) Transient Thermal Impedance (°C/W) 102 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 10–1 103 104 Typical Example 100 101 102 Junction Temperature (°C) Conduction Time (Cycles at 60 Hz) R07DS0062EJ0100 Rev.1.00 Jul 27, 2010 Page 3 of 7 BCR8LM-14LD Maximum Transient Thermal Impedance Characteristics (Junction to ambient) Transient Thermal Impedance (°C/W) 103 Preliminary Maximum On-State Power Dissipation 16 No Fins On-State Power Dissipation (W) 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 14 360° Conduction Resistive, 10 inductive loads 12 8 6 4 2 0 0 2 4 6 8 10 10-1 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105 Conduction Time (Cycles at 60 Hz) RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current 160 140 Allowable Ambient Temperature vs. RMS On-State Current 160 Ambient Temperature (°C) Curves apply regardless of conduction angle 140 120 100 80 60 40 20 0 0 2 4 All fins are black painted aluminum and greased Case Temperature (°C) 120 100 80 60 40 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 360° Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 6 8 10 12 14 16 10 12 14 16 RMS On-State Current (A) RMS On-State Current (A) Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Allowable Ambient Temperature vs. RMS On-State Current 160 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads Repetitive Peak Off-State Current vs. Junction Temperature 106 7 5 3 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 Typical Example Ambient Temperature (°C) 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160 RMS On-State Current (A) Junction Temperature (°C) R07DS0062EJ0100 Rev.1.00 Jul 27, 2010 Page 4 of 7 BCR8LM-14LD Holding Current vs. Junction Temperature Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) 103 7 5 3 2 102 7 5 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 Preliminary Latching Current vs. Junction Temperature 103 7 5 Typical Example Distribution Latching Current (mA) 3 2 102 7 5 3 2 101 7 5 3 2 T2+, G– Typical Example T2+, G+ Typical Example T2–, G– 0 20 40 60 80 100 120 140 160 100 -60 -40 -20 Junction Temperature (°C) Junction Temperature (°C) 160 Breakover Voltage (dv/dt = x V/ms) × 100 (%) Breakover Voltage (dv/dt = 1 V/ms) Breakover Voltage vs. Junction Temperature Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Typical Example 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 125°C) 160 140 120 Typical Example Tj = 125°C III Quadrant 100 80 60 I Quadrant 40 20 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage (dv/dt = x V/ms) × 100 (%) Breakover Voltage (dv/dt = 1 V/ms) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj = 150°C) 160 140 120 100 80 60 40 20 Commutation Characteristics (Tj = 125°C) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 7 5 3 2 101 7 5 3 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time Typical Example Tj = 150°C III Quadrant Minimum Characteristics Value I Quadrant III Quadrant I Quadrant 0 101 2 3 5 7102 2 3 5 7103 2 3 5 7 104 Typical Example = 125° 2 Tj = 4 A C IT τ = 500 μs 100 VD = 200 V f = 3 Hz 7 100 2 3 5 7 101 2 3 5 7 102 Rate of Rise of Off-State Voltage (V/μs) Rate of Decay of On-State Commutating Current (A/ms) R07DS0062EJ0100 Rev.1.00 Jul 27, 2010 Page 5 of 7 BCR8LM-14LD Preliminary Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 7 5 3 2 102 7 5 3 2 101 100 Typical Example IRGTIII IRGTI IFGTI Commutation Characteristics (Tj = 150°C) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) 7 5 3 2 101 7 5 III Quadrant I Quadrant Typical Example 3 Tj = 150°C Main Voltage I =4A (dv/dt)c 2T τ = 500 μs Main Current IT VD = 200 V τ 100 f = 3 Hz 7 100 2 3 5 7 101 23 Time VD (di/dt)c Time 5 7 102 2 3 5 7 101 2 3 5 7 102 Rate of Decay of On-State Commutating Current (A/ms) Gate Current Pulse Width (μs) Gate Trigger Characteristics Test Circuits 6Ω 6Ω 6V V A 330 Ω 6V V A 330 Ω Test Procedure I 6Ω Test Procedure II 6V V A 330 Ω Test Procedure III R07DS0062EJ0100 Rev.1.00 Jul 27, 2010 Page 6 of 7 BCR8LM-14LD Preliminary Package Dimensions Package Name TO-220FL JEITA Package Code ⎯ RENESAS Code PRSS0003AF-A Previous Code TO-220FL MASS[Typ.] 1.5g Unit: mm 10.0 ± 0.3 2.8 ± 0.2 3.0 ± 0.3 15.0 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 12.5 ± 0.5 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 6.5 ± 0.3 2.6 ± 0.2 4.5 ± 0.2 Order Code Lead form Straight type Lead form Standard packing Plastic Magazine (Tube) Plastic Magazine (Tube) Quantity 50 50 Standard order code Type name Type name – Lead forming code Standard order code example BCR8LM-14LD BCR8LM-14LD-A8 Note : Please confirm the specification about the shipping in detail. R07DS0062EJ0100 Rev.1.00 Jul 27, 2010 Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141 http://www.renesas.com © 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0